Patents by Inventor Chih-Ching Wang
Chih-Ching Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230155008Abstract: Embodiments of the present disclosure includes a semiconductor device. The semiconductor device includes first suspended nanostructures vertically stacked over one another and disposed on a substrate, a first gate stack engaging the first suspended nanostructures, a first gate spacer disposed on sidewalls of the first gate stack, second suspended nanostructures vertically stacked over one another and disposed on the substrate, a second gate stack engaging the second suspended nanostructures, and a second gate spacer disposed on sidewalls of the second gate stack. A middle portion of the first suspended nanostructures has a first thickness measured in a direction perpendicular to a top surface of the substrate. A middle portion of the second suspended nanostructures has a second thickness measured in the direction. The second thickness is smaller than the first thickness.Type: ApplicationFiled: January 17, 2023Publication date: May 18, 2023Inventors: Chih-Ching Wang, Chia-Ying Su, Wen-Hsing Hsieh, Kuan-Lun Cheng, Chung-Wei Wu, Zhiqiang Wu
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Patent number: 11626400Abstract: A semiconductor device structure includes a dielectric layer, a first source/drain feature in contact with the dielectric layer, wherein the first source/drain feature comprises a first sidewall, and a second source/drain feature in contact with the dielectric layer and adjacent to the first source/drain feature, wherein the second source/drain feature comprises a second sidewall. The structure also includes an insulating layer disposed over the dielectric layer and between the first sidewall and the second sidewall, wherein the insulating layer comprises a first surface facing the first sidewall, a second surface facing the second sidewall, a third surface connecting the first surface and the second surface, and a fourth surface opposite the third surface. The structure includes a sealing material disposed between the first sidewall and the first surface, wherein the sealing material, the first sidewall, the first surface, and the dielectric layer are exposed to an air gap.Type: GrantFiled: July 16, 2021Date of Patent: April 11, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chih-Ching Wang, Wen-Yuan Chen, Chun Chung Su, Jon-Hsu Ho, Wen-Hsing Hsieh, Kuan-Lun Cheng, Chung-Wei Wu, Zhiqiang Wu
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Patent number: 11616151Abstract: Multi-gate devices and methods for fabricating such are disclosed herein. An exemplary device includes a channel layer, a first source/drain feature, a second source/drain feature, and a metal gate. The channel layer has a first horizontal segment, a second horizontal segment, and a vertical segment connects the first horizontal segment and the second horizontal segment. The first horizontal segment and the second horizontal segment extend along a first direction, and the vertical segment extends along a second direction. The vertical segment has a width along the first direction and a thickness along the second direction, and the thickness is greater than the width. The channel layer extends between the first source/drain feature and the second source/drain feature along a third direction. The metal gate wraps channel layer. In some embodiments, the first horizontal segment and the second horizontal segment are nanosheets.Type: GrantFiled: March 19, 2021Date of Patent: March 28, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTDInventors: Chih-Ching Wang, Jon-Hsu Ho, Wen-Hsing Hsieh, Kuan-Lun Cheng, Zhiqiang Wu
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Patent number: 11600699Abstract: A semiconductor device structure, along with methods of forming such, are described. In one embodiment, a semiconductor device structure is provided. The semiconductor device structure a first source/drain region, a second source/drain region, and a gate stack disposed between the first source/drain region and the second source/drain region. The semiconductor device structure also includes a conductive feature disposed below the first source/drain region. The semiconductor device structure also includes a power rail disposed below and in contact with the conductive feature. semiconductor device structure also includes a dielectric layer enclosing the conductive feature, wherein an air gap is formed between the dielectric layer and the conductive feature.Type: GrantFiled: May 5, 2021Date of Patent: March 7, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chih-Ching Wang, Kuan-Lun Cheng, Wen-Hsing Hsieh
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Publication number: 20230020933Abstract: A semiconductor device structure includes a dielectric layer, a first source/drain feature in contact with the dielectric layer, wherein the first source/drain feature comprises a first sidewall, and a second source/drain feature in contact with the dielectric layer and adjacent to the first source/drain feature, wherein the second source/drain feature comprises a second sidewall. The structure also includes an insulating layer disposed over the dielectric layer and between the first sidewall and the second sidewall, wherein the insulating layer comprises a first surface facing the first sidewall, a second surface facing the second sidewall, a third surface connecting the first surface and the second surface, and a fourth surface opposite the third surface. The structure includes a sealing material disposed between the first sidewall and the first surface, wherein the sealing material, the first sidewall, the first surface, and the dielectric layer are exposed to an air gap.Type: ApplicationFiled: July 16, 2021Publication date: January 19, 2023Inventors: Chih-Ching WANG, Wen-Yuan CHEN, Chun-Chung SU, Jon-Hsu HO, Wen-Hsing HSIEH, Kuan-Lun CHENG, Chung-Wei WU, Zhiqiang WU
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Patent number: 11557659Abstract: Embodiments of the present disclosure includes a method of forming a semiconductor device. The method includes providing a substrate having a plurality of first semiconductor layers and a plurality of second semiconductor layers disposed over the substrate. The method also includes patterning the first semiconductor layers and the second semiconductor layers to form a first fin and a second fin, removing the first semiconductor layers from the first and second fins such that a first portion of the patterned second semiconductor layers becomes first suspended nanostructures in the first fin and that a second portion of the patterned second semiconductor layers becomes second suspended nanostructures in the second fin, and doping a threshold modifying impurity into the first suspended nanostructures in the first fin.Type: GrantFiled: February 8, 2021Date of Patent: January 17, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Ching Wang, Chia-Ying Su, Wen-Hsing Hsieh, Kuan-Lun Cheng, Chung-Wei Wu, Zhiqiang Wu
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Patent number: 11508807Abstract: Embodiments relate to a semiconductor device structure including a first channel layer having a first surface and a second surface, a second channel layer having a first surface and a second surface, and the first and second channel layers are formed of a first material. The structure also includes a first dopant suppression layer in contact with the second surface of the first channel layer, and a second dopant suppression layer parallel to the first dopant suppression layer. The second dopant suppression layer is in contact with the first surface of the second channel layer, and the first and second dopant suppression layers each comprises carbon or fluorine. The structure further includes a gate dielectric layer in contact with the first and second dopant suppression layers and the first surface of the first channel layer, and a gate electrode layer disposed on the gate dielectric layer.Type: GrantFiled: November 25, 2020Date of Patent: November 22, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chih-Ching Wang, Wen-Hsing Hsieh, Jon-Hsu Ho, Wen-Yuan Chen, Chia-Ying Su, Chung-Wei Wu, Zhiqiang Wu
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Publication number: 20220367612Abstract: Embodiments relate to a semiconductor device structure including a first channel layer having a first surface and a second surface, a second channel layer having a first surface and a second surface, and the first and second channel layers are formed of a first material. The structure also includes a first dopant suppression layer in contact with the second surface of the first channel layer, and a second dopant suppression layer parallel to the first dopant suppression layer. The second dopant suppression layer is in contact with the first surface of the second channel layer, and the first and second dopant suppression layers each comprises carbon or fluorine. The structure further includes a gate dielectric layer in contact with the first and second dopant suppression layers and the first surface of the first channel layer, and a gate electrode layer disposed on the gate dielectric layer.Type: ApplicationFiled: July 27, 2022Publication date: November 17, 2022Inventors: Chih-Ching Wang, Wen-Hsing Hsieh, Jon-Hsu Ho, Wen-Yuan Chen, Chia-Ying Su, Chung-Wei Wu, Zhiqiang Wu
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Publication number: 20220359752Abstract: A method includes receiving a semiconductor substrate. The semiconductor substrate has a top surface and includes a semiconductor element. Moreover, the semiconductor substrate has a fin structure formed thereon. The method also includes recessing the fin structure to form source/drain trenches, forming a first dielectric layer over the recessed fin structure in the source/drain trenches, implanting a dopant element into a portion of the fin structure beneath a bottom surface of the source/drain trenches to form an amorphous semiconductor layer, forming a second dielectric layer over the recessed fin structure in the source/drain trenches, annealing the semiconductor substrate, and removing the first and second dielectric layers. After the annealing and the removing steps, the method further includes further recessing the recessed fin structure to provide a top surface. Additionally, the method includes forming an epitaxial layer from and on the top surface.Type: ApplicationFiled: May 7, 2021Publication date: November 10, 2022Inventors: Chih-Ching Wang, Wen-Yuan Chen, Wen-Hsing Hsieh, Kuan-Lun Cheng, Chung-Wei Wu, Zhiqiang Wu
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Publication number: 20220359545Abstract: A semiconductor device includes a plurality of first nanostructures extending along a first lateral direction. The semiconductor device includes a plurality of second nanostructures extending along the first lateral direction. The semiconductor device includes a dielectric fin structure disposed immediately next to a first sidewall of each of the plurality of first nanostructures along a second lateral direction perpendicular to the first lateral direction. The semiconductor device includes a first gate structure wrapping around each of the plurality of first nanostructures except for the first sidewalls. The semiconductor device includes a second gate structure straddling the plurality of second nanostructures.Type: ApplicationFiled: September 13, 2021Publication date: November 10, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Meng-Sheng Chang, Chia-En Huang, Chun Chung Su, Chih-Ching Wang
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Publication number: 20220359657Abstract: A semiconductor device structure, along with methods of forming such, are described. In one embodiment, a semiconductor device structure is provided. The semiconductor device structure a first source/drain region, a second source/drain region, and a gate stack disposed between the first source/drain region and the second source/drain region. The semiconductor device structure also includes a conductive feature disposed below the first source/drain region. The semiconductor device structure also includes a power rail disposed below and in contact with the conductive feature. semiconductor device structure also includes a dielectric layer enclosing the conductive feature, wherein an air gap is formed between the dielectric layer and the conductive feature.Type: ApplicationFiled: May 5, 2021Publication date: November 10, 2022Inventors: Chih-Ching WANG, Kuan-Lun CHENG, Wen-Hsing HSIEH
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Publication number: 20220352319Abstract: Embodiments of the present disclosure provide a method for forming semiconductor device structures. The method includes forming a fin structure having a stack of semiconductor layers comprising first semiconductor layers and second semiconductor layers alternatingly arranged, forming a sacrificial gate structure over a portion of the fin structure, removing the first and second semiconductor layers in a source/drain region of the fin structure that is not covered by the sacrificial gate structure, forming an epitaxial source/drain feature in the source/drain region, removing portions of the sacrificial gate structure to expose the first and second semiconductor layers, removing portions of the second semiconductor layers so that at least one second semiconductor layer has a width less than a width of each of the first semiconductor layers, forming a conformal gate dielectric layer on exposed first and second semiconductor layers, and forming a gate electrode layer on the conformal gate dielectric layer.Type: ApplicationFiled: July 4, 2022Publication date: November 3, 2022Inventors: Chih-Ching WANG, Wei-Yang LEE, Ming-Chang WEN, Jo-Tzu HUNG, Wen-Hsing HSIEH, Kuan-Lun CHENG
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Publication number: 20220344502Abstract: A semiconductor device according to the present disclosure includes a dielectric fin having a helmet layer, a gate structure disposed over a first portion of the helmet layer and extending along a direction, and a dielectric layer adjacent the gate structure and disposed over a second portion of the helmet layer. A width of the first portion along the direction is greater than a width of the second portion along the direction.Type: ApplicationFiled: July 8, 2022Publication date: October 27, 2022Inventors: Yu-Shan Lu, Chung-I Yang, Kuo-Yi Chao, Wen-Hsing Hsieh, Jiun-Ming Kuo, Chih-Ching Wang, Yuan-Ching Peng
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Publication number: 20220336614Abstract: Source/drain silicide that improves performance and methods for fabricating such are disclosed herein. An exemplary device includes a first channel layer disposed over a substrate, a second channel layer disposed over the first channel layer, and a gate stack that surrounds the first channel layer and the second channel layer. A source/drain feature disposed adjacent the first channel layer, second channel layer, and gate stack. The source/drain feature is disposed over first facets of the first channel layer and second facets of the second channel layer. The first facets and the second facets have a (111) crystallographic orientation. An inner spacer disposed between the gate stack and the source/drain feature and between the first channel layer and the second channel layer. A silicide feature is disposed over the source/drain feature where the silicide feature extends into the source/drain feature towards the substrate to a depth of the first channel layer.Type: ApplicationFiled: April 15, 2021Publication date: October 20, 2022Inventors: Chih-Ching Wang, Chung-I Yang, Jon-Hsu Ho, Wen-Hsing Hsieh, Chung-Wei Wu, Zhiqiang Wu
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Patent number: 11404576Abstract: A semiconductor device according to the present disclosure includes a dielectric fin having a helmet layer, a gate structure disposed over a first portion of the helmet layer and extending along a direction, and a dielectric layer adjacent the gate structure and disposed over a second portion of the helmet layer. A width of the first portion along the direction is greater than a width of the second portion along the direction.Type: GrantFiled: October 13, 2020Date of Patent: August 2, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yu-Shan Lu, Chung-I Yang, Kuo-Yi Chao, Wen-Hsing Hsieh, Jiun-Ming Kuo, Chih-Ching Wang, Yuan-Ching Peng
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Patent number: 11387322Abstract: Embodiments of the present disclosure provide semiconductor device structures having at least one T-shaped stacked nanosheet transistor to provide increased effective conductive area across the channel regions. In one embodiment, the semiconductor device structure includes a first channel layer formed of a first material, wherein the first channel layer has a first width, and a second channel layer formed of a second material different from the first material, wherein the second channel layer has a second width less than the first width, and the second channel layer is in contact with the first channel layer. The structure also includes a gate dielectric layer conformally disposed on the first channel layer and the second channel layer, and a gate electrode layer disposed on the gate dielectric layer.Type: GrantFiled: September 21, 2020Date of Patent: July 12, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Ching Wang, Wei-Yang Lee, Ming-Chang Wen, Jo-Tzu Hung, Wen-Hsing Hsieh, Kuan-Lun Cheng
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Publication number: 20220208989Abstract: The present disclosure provides a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device includes channel members disposed over a substrate, a gate structure engaging the channel members, and an epitaxial feature adjacent the channel members. At least one of the channel members has an end portion in physical contact with an outer portion of the epitaxial feature. The end portion of the at least one of the channel members includes a first dopant of a first concentration. The outer portion of the epitaxial feature includes a second dopant of a second concentration. The first concentration is higher than the second concentration.Type: ApplicationFiled: March 21, 2022Publication date: June 30, 2022Inventors: Chih-Ching Wang, Chung-I Yang, Jon-Hsu Ho, Wen-Hsing Hsieh, Kuan-Lun Cheng, Chung-Wei Wu, Zhiqiang Wu
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Publication number: 20220165842Abstract: Embodiments relate to a semiconductor device structure including a first channel layer having a first surface and a second surface, a second channel layer having a first surface and a second surface, and the first and second channel layers are formed of a first material. The structure also includes a first dopant suppression layer in contact with the second surface of the first channel layer, and a second dopant suppression layer parallel to the first dopant suppression layer. The second dopant suppression layer is in contact with the first surface of the second channel layer, and the first and second dopant suppression layers each comprises carbon or fluorine. The structure further includes a gate dielectric layer in contact with the first and second dopant suppression layers and the first surface of the first channel layer, and a gate electrode layer disposed on the gate dielectric layer.Type: ApplicationFiled: November 25, 2020Publication date: May 26, 2022Inventors: Chih-Ching Wang, Wen-Hsing Hsieh, Jon-Hsu HO, Wen-Yuan Chen, Chia-Ying Su, Chung-Wei WU, Zhiqiang Wu
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Publication number: 20220115530Abstract: A semiconductor device according to the present disclosure includes a dielectric fin having a helmet layer, a gate structure disposed over a first portion of the helmet layer and extending along a direction, and a dielectric layer adjacent the gate structure and disposed over a second portion of the helmet layer. A width of the first portion along the direction is greater than a width of the second portion along the direction.Type: ApplicationFiled: October 13, 2020Publication date: April 14, 2022Inventors: Yu-Shan Lu, Chung-I Yang, Kuo-Yi Chao, Wen-Hsing Hsieh, Jiun-Ming Kuo, Chih-Ching Wang, Yuan-Ching Peng
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Publication number: 20220093743Abstract: Embodiments of the present disclosure provide semiconductor device structures having at least one T-shaped stacked nanosheet transistor to provide increased effective conductive area across the channel regions. In one embodiment, the semiconductor device structure includes a first channel layer formed of a first material, wherein the first channel layer has a first width, and a second channel layer formed of a second material different from the first material, wherein the second channel layer has a second width less than the first width, and the second channel layer is in contact with the first channel layer. The structure also includes a gate dielectric layer conformally disposed on the first channel layer and the second channel layer, and a gate electrode layer disposed on the gate dielectric layer.Type: ApplicationFiled: September 21, 2020Publication date: March 24, 2022Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Ching WANG, Wei-Yang LEE, Ming-Chang WEN, Jo-Tzu HUNG, Wen-Hsing HSIEH, Kuan-Lun CHENG