Abstract: An integrated circuit includes a first-voltage power rail and a second-voltage power rail in a first connection layer, and includes a first-voltage underlayer power rail and a second-voltage underlayer power rail below the first connection layer. Each of the first-voltage and second-voltage power rails extends in a second direction that is perpendicular to a first direction. Each of the first-voltage and second-voltage underlayer power rails extends in the first direction. The integrated circuit includes a first via-connector connecting the first-voltage power rail with the first-voltage underlayer power rail, and a second via-connector connecting the second-voltage power rail with the second-voltage underlayer power rail.

Abstract: A method of manufacturing a semiconductor device includes forming a first dielectric layer over a substrate, forming a metal layer in the first dielectric layer, forming an etch stop layer on a surface of the first dielectric layer and the metal layer, removing portions of the metal layer and the etch stop layer to form a recess in the metal layer, and forming a tungsten plug in the recess. The recess is spaced apart from a bottom surface of the etch stop layer.

Abstract: An impeller is provided, including a metal housing, a shaft, and a plastic member. The metal housing has a shaft mounting hole. The inner surface of the shaft mounting hole includes three or more contact points, and the contact points are closer to the shaft than other portions of the inner surface of the shaft mounting hole. The shaft passes through the shaft mounting hole and is affixed by the contact points. The metal housing divides the shaft into an upper section, a middle section, and a lower section. The plastic member passes through the shaft mounting hole and is in contact with the middle section.

Abstract: A compound of Formula (I) below, or a pharmaceutically acceptable salt, stereoisomer, solvate, or prodrug thereof: in which R1, R2, R3, R5, R6, and R7 are defined as in the SUMMARY section. Further disclosed are a method of using the above-described compound, salt, stereoisomer, solvate, or prodrug for treating microbial infections and a pharmaceutical composition containing the same.

Abstract: A semiconductor device is provided. The semiconductor device includes a memory including a bottom electrode, a magnetic tunnel junction (MTJ) stack on the bottom electrode, and an upper electrode on the MTJ stack. The semiconductor device also includes at least one dielectric layer formed around the memory, wherein a top metal layer contact hole is formed in the at least one dielectric layer, a dielectric liner layer formed in the top metal contact hole, and a top metal layer contact in the top metal layer contact hole.

Abstract: A semiconductor device includes a plurality of channel layers vertically separated from one another. The semiconductor device also includes an active gate structure comprising a lower portion and an upper portion. The lower portion wraps around each of the plurality of channel layers. The semiconductor device further includes a gate spacer extending along a sidewall of the upper portion of the active gate structure. The gate spacer has a bottom surface. Moreover, a dummy gate dielectric layer is disposed between the gate spacer and a topmost channel layer of plurality of channel layers. The dummy gate dielectric layer is in contact with a top surface of the topmost channel layer, the bottom surface of the gate spacer, and the sidewall of the gate structure.

Abstract: A semiconductor structure includes a substrate, a conductive region, a first insulation layer, a second insulation layer, a gate structure, a low-k spacer, a gate contact, and a conductive region contact. The low-k spacer is formed between a sidewall of the gate structure and the first insulation layer. The gate contact is landed on a top surface of the gate structure. A proximity distance between a sidewall of the gate contact and the conductive region contact along a top surface of the second insulation layer is in a range of from about 4 nm to about 7 nm. A method for manufacturing a semiconductor structure is also provided.

Abstract: A system including a processor configured to perform generating a plurality of different layout blocks; selecting, among the plurality of layout blocks, layout blocks corresponding to a plurality of blocks in a floorplan of a circuit; combining the selected layout blocks in accordance with the floorplan into a layout of the circuit; and storing the layout of the circuit in a cell library or using the layout of the circuit to generate a layout for an integrated circuit (IC) containing the circuit. Each of the plurality of layout blocks satisfies predetermined design rules and includes at least one of a plurality of different first block options associated with a first layout feature, and at least one of a plurality of different second block options associated with a second layout feature different from the first layout feature.

Abstract: Disclosed are support-activators and catalyst compositions comprising the support-activators for polymerizing olefins in which the support-activator includes clay heteroadduct, prepare from a colloidal phyllosilicate such as a colloidal smectite clay, which is chemically-modified with a heterocoagulation agent. By limiting the amount of heterocoagulation reagent relative to the colloidal smectite clay as described herein, the smectite heteroadduct support-activator is a porous and amorphous solid which can be readily isolated from the resulting slurry by a conventional filtration process, and which can activate metallocenes and related catalysts toward olefin polymerization. Related compositions and processes are disclosed.

Abstract: A driving method for a multiple frequency coupling generator is provided. The method includes: in normal operations, interpreting an input digital control signal transmitted from a digital signal processor into an interpreted digital control signal; interpreting the interpreted digital control signal into a plurality of magnetic coupling signals by a magnetic coupling switch circuit; performing signal recovery and differential delay on the magnetic coupling signals by an interlocking circuit for reducing time difference and signal loss of the magnetic coupling signals; and when the interlocking circuit determines that the magnetic coupling signals have substantially no time difference and no signal loss, transforming the magnetic coupling signals into a first driving signal and a second driving signal by a switch circuit, a driver circuit and an output pad group to drive a backend driving loop.

Abstract: An impeller is provided, including a metal housing, a shaft, and a plastic member. The metal housing has a shaft mounting hole. The inner surface of the shaft mounting hole includes three or more contact points, and the contact points are closer to the shaft than other portions of the inner surface of the shaft mounting hole. The shaft passes through the shaft mounting hole and is affixed by the contact points. The metal housing divides the shaft into an upper section, a middle section, and a lower section. The plastic member passes through the shaft mounting hole and is in contact with the middle section.

Abstract: A method for fabricating semiconductor device includes the steps of: forming fin-shaped structures on a substrate; using isopropyl alcohol (IPA) to perform a rinse process; performing a baking process; and forming a gate oxide layer on the fin-shaped structures. Preferably, a duration of the rinse process is between 15 seconds to 60 seconds, a temperature of the baking process is between 50° C. to 100° C., and a duration of the baking process is between 5 seconds to 120 seconds.

Abstract: A method for fabricating semiconductor device includes the steps of: forming fin-shaped structures on a substrate; using isopropyl alcohol (IPA) to perform a rinse process; performing a baking process; and forming a gate oxide layer on the fin-shaped structures. Preferably, a duration of the rinse process is between 15 seconds to 60 seconds, a temperature of the baking process is between 50° C. to 100° C., and a duration of the baking process is between 5 seconds to 120 seconds.

Abstract: The present invention relates to an isolated strain of lactic acid bacteria (LAB) for inhibiting drug-resistant Enterobacteriaceae, in which the isolated strain of the LAB includes Lacticaseibacillus rhamnosus JJ101, Lacticaseibacillus paracasei JJ102 and/or Lactiplantibacillus plantarum JJ103, and the isolated strain of the LAB inhibit growth of the drug-resistant Enterobacteriaceae. After orally administered to a subject, the isolated strain of the LAB can inhibit the growth of the drug-resistant Enterobacteriaceae, and thus can potentially be used to prevent, improve and/or treat the infection of the drug-resistant Enterobacteriaceae.

Abstract: An impeller is provided, including a metal housing, a shaft, and a plastic member. The metal housing has a shaft mounting hole. The inner surface of the shaft mounting hole includes three or more contact points, and the contact points are closer to the shaft than other portions of the inner surface of the shaft mounting hole. The shaft passes through the shaft mounting hole and is affixed by the contact points. The metal housing divides the shaft into an upper section, a middle section, and a lower section. The plastic member passes through the shaft mounting hole and is in contact with the middle section.

Abstract: A heat dissipation assembly is disclosed and includes a frame and a fan. The frame includes a heat conduction channel and an airflow intake. The heat conduction channel is communication with an exterior through airflow intake. The frame includes a first plane, a second plane and an inclined plane. The first plane is disposed adjacent to the airflow intake. The inclined plane is connected between the first plane and the second plane. The second plane includes an inlet. The heat conduction channel is in communication between the airflow intake and the inlet. A cross-section area of the heat conduction channel adjacent to the airflow intake is greater than that of the heat conduction channel adjacent to the inlet. The fan is spatially corresponding to the inlet, and assembled with the frame to form an outlet in communication with the airflow intake and the heat conduction channel through the inlet.

Abstract: An unavailable memory device initialization system includes a memory controller device that is configured to determine whether a memory system includes unavailable memory devices during initialization operations. During the first initialization operations, a BIOS engine identifies unavailable memory device(s) in the memory system that were determined to be unavailable by the memory controller device during the first initialization operations and, in response, stores respective unavailable memory device identifier(s) associated with each unavailable memory device in a non-volatile storage subsystem.

Abstract: An impeller is provided, including a metal housing, a shaft, and a plastic member. The metal housing has a shaft mounting hole. The inner surface of the shaft mounting hole includes three or more contact points, and the contact points are closer to the shaft than other portions of the inner surface of the shaft mounting hole. The shaft passes through the shaft mounting hole and is affixed by the contact points. The metal housing divides the shaft into an upper section, a middle section, and a lower section. The plastic member passes through the shaft mounting hole and is in contact with the middle section.

Abstract: The disclosure relates to an asymmetrical double-outlet blower, including an upper case, a lower case and an impeller. The upper case includes an inlet. The lower case and the upper case are assembled to form a housing having an accommodation space, and form a first outlet and a second outlet. The accommodation space is in fluid communication with the first outlet, the second outlet and the inlet. The first outlet and the second outlet are disposed on a lateral periphery of the housing and face two opposite directions, respectively. An opening cross-sectional area of the first outlet is less than an opening cross-sectional area of the second outlet. The impeller is accommodated within the accommodation space of the housing, spatially corresponding to the inlet, and rotated around a rotation axis. An airflow is inhaled through the inlet and transported to the first outlet and the second outlet, respectively.

Abstract: A method and structure uses a decentralized network to connect and manage multiple devices. The method includes the steps of: applying for a decentralized identity in the decentralized network, and binding the decentralized identity with a digital identity; storing a correspondingly generated binding information in the decentralized network; authorizing one of the devices, to which the digital identity is allowed to connect, and an allowable account; storing a correspondingly generated authorization information in the decentralized network; when necessary, updating and storing an authentication information of the bound digital identity in the decentralized network; retrieving the authentication information from the decentralized network through a terminal device to process certification for connecting the one of the devices.