Patents by Inventor Chih-Chung Chen
Chih-Chung Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11515213Abstract: A method for forming a semiconductor device. A substrate having a first region and a second region surrounding the first region is provided. The first region includes a first active area and a first gate. A dummy pattern is disposed on the substrate within the second region around a perimeter of the first region. A resist pattern masks the second region and includes an opening that exposes the first region. An ion implantation process is performed to implant dopants through the opening into the first active area not covered by the first gate within the first region, thereby forming doped regions in the first active area. A resist stripping process is performed to remove the resist pattern by using a sulfuric acid-hydrogen peroxide mixture (SPM) solution at a temperature that is higher than or equal to 120˜190 degrees Celsius. The substrate is subjected to a cleaning process.Type: GrantFiled: January 7, 2021Date of Patent: November 29, 2022Assignee: UNITED MICROELECTRONICS CORP.Inventors: Chih-Chung Chen, Po-Chang Lin, Huang-Ren Wei, Wei-Lun Chou
-
Publication number: 20220276873Abstract: An unavailable memory device initialization system includes a memory controller device that is configured to determine whether a memory system includes unavailable memory devices during initialization operations. During the first initialization operations, a BIOS engine identifies unavailable memory device(s) in the memory system that were determined to be unavailable by the memory controller device during the first initialization operations and, in response, stores respective unavailable memory device identifier(s) associated with each unavailable memory device in a non-volatile storage subsystem.Type: ApplicationFiled: May 18, 2022Publication date: September 1, 2022Inventors: Chih-Chung Chen, Shih-Hao Wang
-
Publication number: 20220252079Abstract: An impeller is provided, including a metal housing, a shaft, and a plastic member. The metal housing has a shaft mounting hole. The inner surface of the shaft mounting hole includes three or more contact points, and the contact points are closer to the shaft than other portions of the inner surface of the shaft mounting hole. The shaft passes through the shaft mounting hole and is affixed by the contact points. The metal housing divides the shaft into an upper section, a middle section, and a lower section. The plastic member passes through the shaft mounting hole and is in contact with the middle section.Type: ApplicationFiled: August 2, 2021Publication date: August 11, 2022Inventors: Wei-I Ling, Chao-Fu Yang, Chih-Chung Chen, Kuo-Tung Hsu
-
Publication number: 20220208612Abstract: A method for forming a semiconductor device. A substrate having a first region and a second region surrounding the first region is provided. The first region includes a first active area and a first gate. A dummy pattern is disposed on the substrate within the second region around a perimeter of the first region. A resist pattern masks the second region and includes an opening that exposes the first region. An ion implantation process is performed to implant dopants through the opening into the first active area not covered by the first gate within the first region, thereby forming doped regions in the first active area. A resist stripping process is performed to remove the resist pattern by using a sulfuric acid-hydrogen peroxide mixture (SPM) solution at a temperature that is higher than or equal to 120˜190 degrees Celsius. The substrate is subjected to a cleaning process.Type: ApplicationFiled: January 7, 2021Publication date: June 30, 2022Inventors: Chih-Chung Chen, Po-Chang Lin, Huang-Ren Wei, Wei-Lun Chou
-
Publication number: 20220191201Abstract: A method and structure uses a decentralized network to connect and manage multiple devices. The method includes the steps of: applying for a decentralized identity in the decentralized network, and binding the decentralized identity with a digital identity; storing a correspondingly generated binding information in the decentralized network; authorizing one of the devices, to which the digital identity is allowed to connect, and an allowable account; storing a correspondingly generated authorization information in the decentralized network; when necessary, updating and storing an authentication information of the bound digital identity in the decentralized network; retrieving the authentication information from the decentralized network through a terminal device to process certification for connecting the one of the devices.Type: ApplicationFiled: December 16, 2020Publication date: June 16, 2022Inventors: Chih Hung Lee, Jye Luo, Chih Shun Chen, Chih Chung Chen
-
Patent number: 11347520Abstract: An unavailable memory device initialization system includes a memory controller device that is configured to determine whether a memory system includes unavailable memory devices during initialization operations. During the first initialization operations, a BIOS engine identifies unavailable memory device(s) in the memory system that were determined to be unavailable by the memory controller device during the first initialization operations and, in response, stores respective unavailable memory device identifier(s) associated with each unavailable memory device in a non-volatile storage subsystem.Type: GrantFiled: February 13, 2020Date of Patent: May 31, 2022Assignee: Dell Products L.P.Inventors: Chih-Chung Chen, Shih-Hao Wang
-
Patent number: 11300142Abstract: A fan includes a base, a motor and an impeller, and the motor includes a sleeve, a rotor, a position limiting element and a composite elastic element. The sleeve is disposed on the base, and the sleeve has a bottom portion and a side wall, which constitute an accommodation space. The rotor has a rotating shaft disposed within the accommodation space, and the rotating shaft has an outer wall. An annular groove is formed on the outer wall and has a surface. The position limiting element is disposed on the sleeve and extended from the side wall toward the rotating shaft, and the position limiting element has a bottom surface. The bottom surface faces toward the bottom portion, and the bottom surface is interfered with the surface, thereby eliminating the gap between the bottom surface and the surface. Therefore, noise of the up and down vibration is avoided from generating.Type: GrantFiled: November 13, 2019Date of Patent: April 12, 2022Assignee: DELTA ELECTRONICS, INC.Inventors: Wei-I Ling, Chih-Chung Chen, Meng-Yu Chen
-
Publication number: 20210388848Abstract: The disclosure relates to an asymmetrical double-outlet blower, including an upper case, a lower case and an impeller. The upper case includes an inlet. The lower case and the upper case are assembled to form a housing having an accommodation space, and form a first outlet and a second outlet. The accommodation space is in fluid communication with the first outlet, the second outlet and the inlet. The first outlet and the second outlet are disposed on a lateral periphery of the housing and face two opposite directions, respectively. An opening cross-sectional area of the first outlet is less than an opening cross-sectional area of the second outlet. The impeller is accommodated within the accommodation space of the housing, spatially corresponding to the inlet, and rotated around a rotation axis. An airflow is inhaled through the inlet and transported to the first outlet and the second outlet, respectively.Type: ApplicationFiled: June 11, 2021Publication date: December 16, 2021Inventors: Yi-Han Wang, Chao-Fu Yang, Chih-Chung Chen, Shun-Chen Chang, Kuo-Tung Hsu
-
Patent number: 11199197Abstract: A centrifugal fan is provided and includes an impeller, a motor, a first case and a second case. The motor is connected with the impeller to drive the impeller to rotate. The first case and the second case are assembled to form an accommodation space for accommodating the impeller and the motor. The first case includes a first side, a first guiding wall, a flow inlet and a flow outlet. The flow inlet is disposed on the first side, the first guiding wall is connected with the first side, and the flow outlet and the flow inlet are located at a same side of the centrifugal fan. The second case includes a second side and a second guiding wall connected with the second side. The first guiding wall and the second guiding wall are assembled to form a flow guiding channel, which has cross-sectional areas with different sizes.Type: GrantFiled: February 18, 2020Date of Patent: December 14, 2021Assignee: DELTA ELECTRONICS, INC.Inventors: Chao-Fu Yang, Shao-Ning Lee, Chih-Chung Chen, Shun-Chen Chang, Kuo-Tung Hsu
-
Publication number: 20210255966Abstract: An unavailable memory device initialization system includes a memory controller device that is configured to determine whether a memory system includes unavailable memory devices during initialization operations. During the first initialization operations, a BIOS engine identifies unavailable memory device(s) in the memory system that were determined to be unavailable by the memory controller device during the first initialization operations and, in response, stores respective unavailable memory device identifier(s) associated with each unavailable memory device in a non-volatile storage subsystem.Type: ApplicationFiled: February 13, 2020Publication date: August 19, 2021Inventors: Chih-Chung CHEN, Shih-Hao WANG
-
Patent number: 11023024Abstract: A voltage regulator configuration system includes a voltage regulator module that is coupled to a processing system and that is configured to provide a voltage to the processing system. A Basic Input/Output System (BIOS) that is also coupled to the processing system and the BIOS identifies a processing system mode in which the processing system is operating and identifies a voltage regulator module configuration for the voltage regulator module based on the processing system mode. The BIOS transmits a voltage regulator module configuration command that includes the voltage regulator module configuration to a remote access controller. The remote access controller configures the voltage regulator module with the voltage regulator module configuration.Type: GrantFiled: February 4, 2020Date of Patent: June 1, 2021Assignee: Dell Products L.P.Inventors: Chih-Chung Chen, Feng-Yu Wu, Gin-Yen Yang
-
Publication number: 20210071682Abstract: A centrifugal fan is provided and includes an impeller, a motor, a first case and a second case. The motor is connected with the impeller to drive the impeller to rotate. The first case and the second case are assembled to form an accommodation space for accommodating the impeller and the motor. The first case includes a first side, a first guiding wall, a flow inlet and a flow outlet. The flow inlet is disposed on the first side, the first guiding wall is connected with the first side, and the flow outlet and the flow inlet are located at a same side of the centrifugal fan. The second case includes a second side and a second guiding wall connected with the second side. The first guiding wall and the second guiding wall are assembled to form a flow guiding channel, which has cross-sectional areas with different sizes.Type: ApplicationFiled: February 18, 2020Publication date: March 11, 2021Inventors: Chao-Fu Yang, Shao-Ning Lee, Chih-Chung Chen, Shun-Chen Chang, Kuo-Tung Hsu
-
Publication number: 20210057551Abstract: A method for fabricating semiconductor device includes the steps of: forming fin-shaped structures on a substrate; using isopropyl alcohol (IPA) to perform a rinse process; performing a baking process; and forming a gate oxide layer on the fin-shaped structures. Preferably, a duration of the rinse process is between 15 seconds to 60 seconds, a temperature of the baking process is between 50° C. to 100° C., and a duration of the baking process is between 5 seconds to 120 seconds.Type: ApplicationFiled: November 6, 2020Publication date: February 25, 2021Inventors: Po-Chang Lin, Bo-Han Huang, Chih-Chung Chen, Chun-Hsien Lin, Shih-Hung Tsai, Po-Kuang Hsieh
-
Patent number: 10868148Abstract: A method for fabricating semiconductor device includes the steps of: forming fin-shaped structures on a substrate; using isopropyl alcohol (IPA) to perform a rinse process; performing a baking process; and forming a gate oxide layer on the fin-shaped structures. Preferably, a duration of the rinse process is between 15 seconds to 60 seconds, a temperature of the baking process is between 50° C. to 100° C., and a duration of the baking process is between 5 seconds to 120 seconds.Type: GrantFiled: December 4, 2018Date of Patent: December 15, 2020Assignee: UNITED MICROELECTRONICS CORP.Inventors: Po-Chang Lin, Bo-Han Huang, Chih-Chung Chen, Chun-Hsien Lin, Shih-Hung Tsai, Po-Kuang Hsieh
-
Publication number: 20200224678Abstract: A fan includes a base, a motor and an impeller, and the motor includes a sleeve, a rotor, a position limiting element and a composite elastic element. The sleeve is disposed on the base, and the sleeve has a bottom portion and a side wall, which constitute an accommodation space. The rotor has a rotating shaft disposed within the accommodation space, and the rotating shaft has an outer wall. An annular groove is formed on the outer wall and has a surface. The position limiting element is disposed on the sleeve and extended from the side wall toward the rotating shaft, and the position limiting element has a bottom surface. The bottom surface faces toward the bottom portion, and the bottom surface is interfered with the surface, thereby eliminating the gap between the bottom surface and the surface. Therefore, noise of the up and down vibration is avoided from generating.Type: ApplicationFiled: November 13, 2019Publication date: July 16, 2020Inventors: Wei-I Ling, Chih-Chung Chen, Meng-Yu Chen
-
Publication number: 20200135899Abstract: A method for fabricating semiconductor device includes the steps of: forming fin-shaped structures on a substrate; using isopropyl alcohol (IPA) to perform a rinse process; performing a baking process; and forming a gate oxide layer on the fin-shaped structures. Preferably, a duration of the rinse process is between 15 seconds to 60 seconds, a temperature of the baking process is between 50° C. to 100° C., and a duration of the baking process is between 5 seconds to 120 seconds.Type: ApplicationFiled: December 4, 2018Publication date: April 30, 2020Inventors: Po-Chang Lin, Bo-Han Huang, Chih-Chung Chen, Chun-Hsien Lin, Shih-Hung Tsai, Po-Kuang Hsieh
-
Patent number: 10403804Abstract: LED chip packaging assembly that facilitates an integrated method for mounting LED chips as a group to be pre-wired to be electrically connected to each other through a pattern of extendable metal wiring lines is provided. LED chips which are electrically connected to each other through extendable metal wiring lines, replace pick and place mounting and the wire bonding processes of the LED chips, respectively. Wafer level MEMS technology is utilized to form parallel wiring lines suspended and connected to various contact pads. Bonding wires connecting the LED chips are made into horizontally arranged extendable metal wiring lines which can be in a spring shape, and allowing for expanding and contracting of the distance between the connected LED chips. A tape is further provided to be bonded to the LED chips, and extended in size to enlarge distance between the LED chips to exceed the one or more prearranged distances.Type: GrantFiled: June 13, 2018Date of Patent: September 3, 2019Assignees: EPISTAR CORPORATION, IMEC TAIWAN CO.Inventors: Guan Ru He, Jui-Hung Yeh, Kevin T. Y. Huang, Chih Chung Chen
-
Patent number: 10371161Abstract: A centrifugal fan includes a frame and an impeller. The impeller is disposed within the frame. The impeller includes a hub, a first blade group and a second blade group. The hub includes a center part, an inclined part and a connection part. The first blade group is connected with the connection part of the hub. The second blade group is disposed on the inclined part of the hub. There is a first distance between the second blade group and the first blade group. There is a second distance between the second blade group and the center part of the hub.Type: GrantFiled: November 8, 2016Date of Patent: August 6, 2019Assignee: DELTA ELECTRONICS, INCInventors: Wei-I Ling, Chih-Chung Chen, Meng-Yu Chen
-
Patent number: 10276443Abstract: A method of removing a fin structure includes providing a substrate. A fin structure extends from the substrate. A mask layer is disposed on a top surface of the fin structure. An organic dielectric layer covers the substrate, the fin structure and the mask layer. A first etching process is performed to entirely remove the mask layer by taking the organic dielectric layer as a mask. Then a second etching process is performed to remove the fin structure. The first etching process is preferably an anisotropic etching process, and the second etching process is an isotropic etching process.Type: GrantFiled: February 28, 2017Date of Patent: April 30, 2019Assignee: UNITED MICROELECTRONICS CORP.Inventors: Shin-Chi Chen, Chih-Chung Chen, An-Chi Liu, Chih-Yueh Li, Pei-Ching Yeh, Tsung-Chieh Yang
-
Patent number: D891371Type: GrantFiled: September 18, 2018Date of Patent: July 28, 2020Assignee: CHENG UEI PRECISION INDUSTRY CO., LTD.Inventor: Chih-Chung Chen