Abstract: A multi-channel memory device includes N first memory blocks, a first redundancy memory block, and N first interface circuits. Each of the first interface circuits is coupled to two of the first memory blocks and the first redundancy memory block. The first interface circuits respectively select N first selected memory blocks in the first memory block and the first redundancy memory block according to a plurality of first selection signals, where N is a positive integer greater than 1.

Abstract: A shapable display device includes a first deformable substrate, a first stretchable electrode layer, a stretchable display medium layer, and a second stretchable electrode layer. The first stretchable electrode layer is disposed on the first deformable substrate. The stretchable display medium layer is disposed on the first stretchable electrode layer. The second stretchable electrode layer is disposed on the stretchable display medium layer. The stretchable display medium layer is between the first stretchable electrode layer and the second stretchable electrode layer.

Abstract: The present disclosure provides a semiconductor processing apparatus according to one embodiment. The semiconductor processing apparatus includes a chamber; a base station located in the chamber for supporting a semiconductor substrate; a preheating assembly surrounding the base station; a first heating element fixed relative to the base station and configured to direct heat to the semiconductor substrate; and a second heating element moveable relative to the base station and operable to direct heat to a portion of the semiconductor substrate.

Abstract: An electrophoretic display device including a first stretchable material layer, a first stretchable electrode layer, a stretchable electrophoretic display medium layer, multiple second stretchable electrode layers, an insulation layer, and a third stretchable electrode layer. The first stretchable electrode layer is disposed on the first stretchable material layer. The stretchable electrophoretic display medium layer is disposed on the first stretchable electrode layer. The second stretchable electrode layers are separately disposed on the stretchable electrophoretic display medium layer, so that the stretchable electrophoretic display medium layer forms multiple display regions. The insulation layer is disposed on the second stretchable electrode layers, and has multiple through holes in which multiple conductive materials are respectively filled.

Abstract: A foldable display device includes a reflective display panel, a light guiding layer and at least one light source. The light guiding layer is located on the reflective display panel and includes a non-foldable area, a foldable area and a transition area. The light guiding layer satisfies the following formulas: D2<D1, W2?Rx ? and J1?(L?W2)/2?W1, in which D1 is a thickness of the non-foldable area, D2 is a thickness of the foldable area, W1 is a width of the non-foldable area, W2 is a width of the foldable area, R is a folding radius of the reflective display panel, J1 is a width of the transition area, L is a length of the light guiding layer. The light source is located on the reflective display panel and faces the sidewall of the light guiding layer.

Abstract: A molded semiconductor device includes a semiconductor device and a molding material encapsulating the semiconductor device, wherein an upper surface of the molding material is substantially coplanar with an upper surface of the semiconductor device and comprises a groove at least partially surrounding the upper surface of the semiconductor device.

Abstract: A device includes a semiconductor substrate, a fin structure on the semiconductor substrate, a gate structure on the fin structure, and a pair of source/drain features on both sides of the gate structure. The gate structure includes an interfacial layer on the fin structure, a gate dielectric layer on the interfacial layer, and a gate electrode layer of a conductive material on and directly contacting the gate dielectric layer. The gate dielectric layer includes nitrogen element.

Abstract: In a method of manufacturing a semiconductor device, a fin structure is formed by patterning a semiconductor layer, and an annealing operation is performed on the fin structure. In the patterning of the semiconductor layer, a damaged area is formed on a sidewall of the fin structure, and the annealing operation eliminates the damaged area.

Abstract: A memory cell includes a thin film transistor over a semiconductor substrate. The thin film transistor comprising: a ferroelectric (FE) material contacting a word line, the FE material being a hafnium-comprising compound, and the hafnium-comprising compound comprising a rare earth metal; and an oxide semiconductor (OS) layer contacting a source line and a bit line, wherein the FE material is disposed between the OS layer and the word line.

Abstract: A transistor includes a gate structure that has a first gate dielectric layer and a second gate dielectric layer. The first gate dielectric layer is disposed over the substrate. The first gate dielectric layer contains a first type of dielectric material that has a first dielectric constant. The second gate dielectric layer is disposed over the first gate dielectric layer. The second gate dielectric layer contains a second type of dielectric material that has a second dielectric constant. The second dielectric constant is greater than the first dielectric constant. The first dielectric constant and the second dielectric constant are each greater than a dielectric constant of silicon oxide.

Abstract: The control circuit for controlling a display panel is provided. The control circuit includes a first driving circuit and a second driving circuit for driving the display panel. The first driving circuit includes first output terminals and first input terminals. The first driving circuit outputs a plurality of test signals to the first output terminals sequentially during different periods in a diagnosis stage. The second driving circuit includes second input terminals and second output terminals. The second driving circuit receives the test signals through the second input terminals in the diagnosis stage, and outputs a plurality of response signals to the second output terminals sequentially during different periods in response to the test signals. The first driving circuit receives the response signals through the first input terminals, and judges a connecting status of the first driving circuit and the second driving circuit according to the response signals.

Abstract: System on chips, memory circuits, and method for data access, the memory circuits including a memory cell array and an input/output (I/O) connection interface coupled to the memory cell array, wherein the I/O connection interface is configured for coupling to an external signal line to directly receive a transistor-level operation signal from an external memory controller for accessing data in the memory cell array.

Abstract: A random-number-generating circuit is provided, which includes a noise-voltage generator, a voltage-controlled oscillator, a ring oscillator, and a D flip-flop (DFF). The noise-voltage generator converts an external voltage into a noise voltage. The voltage-controlled oscillator receives the noise voltage, and generates a first clock signal according to the noise voltage. The ring oscillator generates a sampling clock signal. The DFF receives the first clock signal, and samples the first clock signal using the sampling clock signal to obtain an output digital signal, wherein the output digital signal represents a random number.

Abstract: A low-dropout regulator including a first comparator, an edge trigger, a second comparator, a third comparator, and an output stage circuit is provided. The first comparator generates a first comparison signal according to a first reference signal and an output signal. The edge trigger outputs a trigger signal according to the first comparison signal, a second comparison signal, and a third comparison signal. The second comparator generates the second comparison signal according to the output signal and a second reference signal. The third comparator generates the third comparison signal according to the output signal and a third reference signal. The output stage circuit outputs the output signal according to the first comparison signal, the second comparison signal, and the third comparison signal. The output stage circuit includes a plurality of hysteresis controllers and a plurality of power transistors. Each hysteresis controller controls a conduction state of a corresponding power transistor.

Abstract: An electrostatic discharge (ESD) protection device including the following components is provided. A first transistor includes a first gate, a first N-type source region, and an N-type drain region. A second transistor includes a second gate, a second N-type source region, and the N-type drain region. The N-type drain region is located between the first gate and the second gate. An N-type drift region is located in a P-type substrate between the first gate and the second gate and is located directly below a portion of the first gate and directly below a portion of the second gate. The N-type drain region is located in the N-type drift region. A P-type barrier region is located in the P-type substrate below the N-type drift region. The P-type barrier region has an overlapping portion overlapping the N-type drift region. There is at least one first opening in the overlapping portion.

Abstract: Disclosed is a power control system with zero voltage switching including a power controller, a rectification unit, a power unit, a transformer unit, a primary side switch unit, a current sensing unit, an auxiliary switch unit, an output unit, and a current sensing unit for implementing a function of flyback power conversion. The power controller has a power pin, a ground pin, a primary side driving pin, a voltage sensing pin, an auxiliary driving pin, and an auxiliary winding sensing pin, In particular, the auxiliary switch unit is controlled to influence an primary side winding through an auxiliary winding so as to reduce the drain voltage of the primary side switch unit. Further, the primary side switch unit is turned on when the drain voltage is decreased to the lowest value, thereby greatly reducing switching loss and increasing efficiency of power conversion.