Abstract: A method of protecting alignment marks from damage in a planarization process includes providing a substrate including a surface, forming trenches in the substrate from the surface, forming a first dielectric layer on the substrate, forming a second dielectric layer on the first dielectric layer, forming a patterned second dielectric layer by removing second dielectric over the trenches, resulting in openings defined by the trenches and the patterned second dielectric layer, forming a third dielectric layer on the patterned second dielectric layer, the third dielectric layer filling the openings, and planarizing the third dielectric layer by using the patterned second dielectric layer as a stop layer, resulting in residual third dielectric in the openings that includes a first portion in the substrate and a second portion above the surface of the substrate.

Abstract: An overlay mark is used in pattern registration on a semiconductor wafer with an oxide layer. Four sets of two trenches each are formed in the oxide layer. Each trench in a set is parallel to the other trench of the same set. The trenches are configured such that each set forms one side of a box shape.

Abstract: An apparatus for coating a film on a substrate are presented. According to principle of the invention, firstly, a control device controls a first coating device to spray a coating solution onto the substrate. Then, a sensor monitors viscosity data of the coating solution presented between the first coating device and the substrate during movement of the first coating device and sends the viscosity data to the control device, or the sensor monitors viscosity data of the coating solution coated on the substrate and sends the viscosity data to the control device. Lastly, the control device controls a second coating device to spray a coating solution onto the substrate after the first coating device according to signals about the viscosity data from the control device.

Abstract: An overlay mark is described, including a portion of a lower layer having two x-directional and two y-directional bar-like patterns therein, and two x-directional and two y-directional photoresist bars defined by the lithography process for defining an upper layer and surrounded by the bar-like patterns. At least one of the patterning process for defining the lower layer and the above lithography process includes two exposure steps respectively for defining a first device area and a second device area. When the patterning process includes two exposure steps, one x-directional and one y-directional bar-like patterns are defined simultaneously and the other x-directional and the other y-directional bar-like patterns are defined simultaneously. When the lithography process includes two exposure steps, one x-directional and one y-directional photoresist bars are defined simultaneously and the other x-directional and the other y-directional photoresist bars are defined simultaneously.

Abstract: An integrated circuit that includes a line end created through use of a mask that controls line end shortening and corner rounding arising from proximity effects is provided. The mask includes a main feature having opaque and transmissive areas arranged to reflect a patterned feature of the line end, at least one of an opaque edge or a transmissive edge located at each end of the main feature, wherein the opaque edge has a set of transmissive assist features arranged therein such that the set of transmissive assist features align alternately with the transmissive areas of the main feature, and the transmissive edge has a set of opaque assist features arranged therein such that the set of opaque assist features align alternately with the opaque areas of the main feature.

Abstract: A method of making a composite coating includes the steps of: adding a proper quantity of inorganic metal salt into an organic dissolvent to form a first mixed solution and then stirring the first mixed solution for 30-60 minutes; adding a proper quantity of SiO2 precursor into the first mixed solution to form a second mixed solution and then stirring the second mixed solution for 30-60 minutes; adding a proper quantity of catalyzer and water into the second mixed solution for being reacted with each other so as to form a coating solution via being stirred for 4-8 hours; and putting the coating solution under the room temperature for 24 hours so as to obtain the composite coating. A product formed with the foregoing composite coating includes a base body and a layer of composite protective film formed by the composite coating on surfaces of the base body.

Abstract: An overlay mark is used in pattern registration on a semiconductor wafer with an oxide layer. Four sets of two trenches each are formed in the oxide layer. Each trench in a set is parallel to the other trench of the same set. The trenches are configured such that each set forms one side of a box shape.

Abstract: A method of making atomizing agent is described hereinafter. Firstly, make a nanometer silicon dioxide gel by means of a sol-gel method. Next, mix a proper quantity of nanometer silicon dioxide gel and organic solvent together to form a nanometer silicon dioxide solution. Lastly, add a proper quantity of water-based polyurethane resin or de-ionized water into the nanometer silicon dioxide solution so as to obtain the atomizing agent by means of being stirred for 1 hour and then aging for 24 hours under a room temperature.

Abstract: A wafer conveying system includes a first conveying unit, a second conveying unit, a floating type conveying unit set between the first conveying unit and the second conveying unit for transferring wafers from the first conveying unit to the second conveying unit, two guide devices arranged at the two opposite lateral sides of the floating type conveying unit for guiding every transferring wafer from the first conveying unit through the floating type conveying unit to a predetermined location or its nearby area at the second conveying unit, and a test unit installed in the second conveying unit for testing the same area of every wafer been transferred to the second conveying unit.

Abstract: The present invention discloses a wafer conveying and detecting system and wafer detecting method used in the wafer conveying and detecting system. The wafer conveying and detecting system comprises a first conveying unit, a second conveying unit, a detection unit and a transmission mechanism. The first conveying unit transfers wafers to the second conveying unit, and the detection unit is moved by the transmission mechanism relative to the second conveying unit to detect the wafers at the second conveying unit when the second conveying is stopped temporarily.

Abstract: The present invention relates to a method for manufacturing an antibacterial electronic device. The method includes the steps of: (1) dispersing antibacterial material into alcohol solution with a predetermined concentration to form an even mixture solution; (2) laying statically the even mixture solution for a predetermined period of time to obtain a uniform and steady antibacterial solution; (3) coating the antibacterial solution to a surface of an insulating shell of an electronic device, the surface of the insulating shell of the electronic device with the antibacterial solution being dried at a temperature ranging from 50-150 degrees centigrade for obtaining a continuous antibacterial layer tightly attached to the surface of the insulating shell.

Abstract: A method for atomizing a surface of a substrate includes the steps of: coating a proper quantity of chemical solvent onto the surface of the substrate to react with substrate material of the substrate for a certain time; then rinsing off the remaining chemical solvent on the substrate with water to obtain an atomized surface on the substrate. Therefore, it can achieve a simple process, a high productivity and a low manufacture cost without any effect on properties of the substrate.

Abstract: A method for registering a pattern on a semiconductor wafer with an oxide surface includes etching into the surface four sets of two trenches each. Each trench in a set is parallel to the other. The trenches are configured such that each set forms one side of a box shape. The trenches are overfilled with a first metal layer, the excess of which is removed so that the height of the metal is level with the height of the oxide. An overlay setting is then obtained between a photoresist mask and the filled trenches before depositing a second metal layer over the oxide and trenches. The second metal layer is coated with the photoresist according to the overlay setting.

Abstract: An alignment mark on a wafer is described, including at least one dense pattern and at least one block-like pattern adjacent thereto and shown as at least one dark image and at least one bright image adjacent thereto. A method of getting a position reference for a wafer is also described. An above alignment mark is formed. The alignment mark, which is shown as at least one dark image and at least one bright image adjacent thereto that are formed by the at least one dense pattern and the at least one block-like pattern, is then detected.

Abstract: A method for forming a film on a substrate includes steps of: blending precursor, dissolvent, de-ionized water and catalyst in proportion to make sol solution; standing the sol solution for a period of to form gel solution; mixing the gel solution with diluent in proportion to form the coating solution; and coating the coating solution onto the substrate and then drying the coating solution to form a film on the substrate. The ratio of the gel solution and the diluent in the coating solution can be controlled to change the thickness of the film formed on the substrate. The ratio of the gel solution and the diluent is adjusted, the thickness of the film is adjusted according to the ratio to realize controlling the thickness of the film, therefore, the method for forming the film on the substrate is simply, and the thickness of the film can be controlled exactly, so the method can be used in industry field.

Abstract: An exposure process is described, for defining in a photoresist layer a plurality of first patterns having a first pitch and a second pattern between them that is wider than one first pattern. A first exposure step is conducted to the photoresist layer with a first photomask that has a plurality of the first patterns without a second pattern between them, wherein the first patterns on the first photomask have the first pitch only. A second exposure step is conducted to the photoresist layer with a second photomask that has a third pattern narrower than the second pattern at a position corresponding to the second pattern. The exposure dose of the first or second exposure step alone is not sufficient to define any pattern in the photoresist layer.

Abstract: A method of resisting dust and dirt with nanotechnology adapted for electronic products is described hereinafter. Firstly, make an initial reactant into a metal oxide gel of nanometer by way of a sol-gel method. Secondly, dilute the metal oxide gel of nanometer with a diluent to form a coating solution, and then stand the coating solution for a period of time to make the metal oxide gel of nanometer and the diluent well mixed with each other. Next, coat the coating solution onto surfaces of the product evenly to fill up tiny holes on the surfaces of the product. Lastly, put the product coated with the coating solution at the temperature of 20˜22° C. to make the coating solution evaporate so as to form continuous protective films on the surfaces of the product for fully filling up the tiny holes.

Abstract: An auxiliary position apparatus is adapted for an injection molding machine which includes a nose and the nose has a nozzle at one end thereof. The auxiliary position apparatus includes a position device for being mounted to the nose and at least two light emitting devices adjustably mounted to the position device. The two light emitting devices can emit two adjustable light beams to focus as a light-spot which is substantially in alignment with the nozzle on a mold placed on the injection molding machine. By moving the mold to make the light-spot located at an injecting hole of the mold, the nozzle can be adjustably in alignment with the injecting hole rapidly and precisely before the injection molding operations.

Abstract: A method of making a composite coating includes the steps of: adding a proper quantity of inorganic metal salt into an organic dissolvent to form a first mixed solution and then stirring the first mixed solution for 30-60 minutes; adding a proper quantity of SiO2 precursor into the first mixed solution to form a second mixed solution and then stirring the second mixed solution for 30-60 minutes; adding a proper quantity of catalyzer and water into the second mixed solution for being reacted with each other so as to form a coating solution via being stirred for 4-8 hours; and putting the coating solution under the room temperature for 24 hours so as to obtain the composite coating. A product formed with the foregoing composite coating includes a base body and a layer of composite protective film formed by the composite coating on surfaces of the base body.

Abstract: A method of manufacturing magnetic material is described hereinafter. Firstly, Fe(NO3)3.9H2O and other metal nitrate compounds are dissolved in an alcohol solvent to form a mixed solution. Secondly, the mixed solution is heated to 60˜100 degrees Centigrade. Next, citric acid is added into the mixed solution for being reacted with each other under the temperature of 60˜100 degrees Centigrade so that can make the alcohol solvent volatilized and further obtain brown solid powder. Lastly, the solid powder is further heated for a period of time so as to obtain the magnetic material having a fluffy powdery form.