Abstract: A method for producing a SiGe stressor with high Ge concentration is provided. The method includes providing a semiconductor substrate with a source area, a drain area, and a channel in between; depositing the first SiGe film layer on the source area and/or the drain area; performing a low temperature thermal oxidation, e.g., a high water vapor pressure wet oxidation, to form an oxide layer at the top of the first SiGe layer and to form the second SiGe film layer with high Ge percentage at the bottom of the first SiGe film layer without Ge diffusion into the semiconductor substrate; performing a thermal diffusion to form the SiGe stressor from the second SiGe film layer, wherein the SiGe stressor provides uniaxial compressive strain on the channel; and removing the oxide layer. A Si cap layer can be deposited on the first SiGe film layer prior to performing oxidation.

Abstract: A voltage controlled oscillator (VCO) includes a voltage controlled current source (VCCS), a negative resistance circuit (NRC), a first transformer, a second transformer, a first transistor and a second transistor. A current terminal of the VCCS receives a control voltage. First terminals of first and second current paths in the NRC are coupled to a current terminal of the VCCS. Primary sides of the first and the second transformers are respectively coupled to second terminals of the first and the second current paths. Secondary sides of the first and the second transformers are first and second output terminals of the VCO, respectively. First terminals of the first and the second transistor are respectively coupled to the secondary sides of the first and the second transformers. Control terminals of the first and the second transformers are respectively coupled to the primary sides of the first and the second transformers.

Abstract: A parking device for a bicycle includes a main control unit (11), a parking unit (12) mounted on the main control unit, and a locking member (13) movably mounted in the main control unit and extending into the parking unit. Thus, the parking device can lock the bicycle (20) so as to provide a burglarproof effect. In addition, the bicycle is locked by the parking device so that the user needs not to carry a lock to prevent from causing a burden to the user. Further, the parking device locks the bicycle easily and quickly to facilitate the user locking and unlocking the bicycle.

Abstract: A method of forming a shallow trench isolation region is provided. The method includes providing a semiconductor substrate comprising a top surface; forming an opening extending from the top surface into the semiconductor substrate; performing a conformal deposition method to fill a dielectric material into the opening; performing a first treatment on the dielectric material, wherein the first treatment provides an energy high enough for breaking bonds in the dielectric material; and performing a steam anneal on the dielectric material.

Abstract: A method of forming a shallow trench isolation region is provided. The method includes providing a semiconductor substrate comprising a top surface; forming an opening extending from the top surface into the semiconductor substrate; performing a first deposition step to fill a first dielectric material into the opening using a first deposition method. The first deposition method has a bottom deposition rate substantially greater than a sidewall deposition rate. The method further includes isotropically etching the first dielectric material, wherein at least a bottom portion of the first dielectric material remains after the etching; and performing a second deposition step to fill a remaining portion of the opening with a second dielectric material. The first deposition method may be a high-density plasma chemical vapor deposition. The second deposition method may be a high-aspect ratio process.

Abstract: A flexible display panel device includes a plastic substrate with a display region and a peripheral region, a plurality of ribs disposed in the peripheral region and/or the display region, a discontinuous buffer layer disposed on the plastic substrate, and an active matrix component layer on a pixel disposed on the discontinuous buffer layer. During the fabrication of the flexible panel, a plastic substrate is first disposed on a carrier substrate for performing device fabrication. After the panel is finished, the plastic substrate is departed from the carrier substrate to form a flexible panel. Through the integration design of the ribs and discontinuous buffer layer, the flexible panel has preferred warp resistance and low stress, thereby enhancing the reliability and life time of the panel.