Abstract: In one example in accordance with the present disclosure, a computing device is described. The computing device includes a housing and a light source to illuminate through a window in the housing. The computing device also includes a controller. The controller determines a usage level of a processor of the computing device. The controller also adjusts a characteristic of the light source based on a determined usage level of the processor.

Abstract: A package structure includes a thermal dissipation structure, a first encapsulant, a die, a through integrated fan-out via (TIV), a second encapsulant, and a redistribution layer (RDL) structure. The thermal dissipation structure includes a substrate and a first conductive pad disposed over the substrate. The first encapsulant laterally encapsulates the thermal dissipation structure. The die is disposed on the thermal dissipation structure. The TIV lands on the first conductive pad of the thermal dissipation structure and is laterally aside the die. The second encapsulant laterally encapsulates the die and the TIV. The RDL structure is disposed on the die and the second encapsulant.

Abstract: A method of manufacturing a semiconductor structure forming a redistribution layer (RDL); forming a conductive pad over the RDL; performing a first electrical test through the conductive pad; bonding a first die over the RDL by a connector; disposing a first underfill material to surround the connector; performing a second electrical test through the conductive pad; disposing a second die over the first die and the conductive pad; and disposing a second underfill material to surround the second die, wherein the conductive pad is at least partially in contact with the second underfill material, and is protruded from the RDL during the first electrical test and the second electrical test.

Abstract: A circuit test structure includes an interposer for electrically connecting to a chip, wherein the interposer includes a conductive line, and the conductive line extends along at least two side of the interposer. The circuit test structure further includes a plurality of electrical connections to the conductive line. The circuit test structure further includes a testing site electrically connected to the conductive line, wherein the testing site is on an opposite surface of the interposer from the plurality of electrical connections.

Abstract: Semiconductor structures and method of forming the same are provided. A semiconductor structure according to the present disclosure includes a contact feature in a dielectric layer, a passivation structure over the dielectric layer, a conductive feature over the passivation structure, a seed layer disposed between the conductive feature and the passivation structure, a protecting layer disposed along sidewalls of the conductive feature, and a passivation layer over the conductive feature and the protecting layer.

Abstract: Semiconductor structures and method of forming the same are provided. A semiconductor structure according to the present disclosure includes a contact feature in a dielectric layer, a passivation structure over the dielectric layer, a conductive feature over the passivation structure, a seed layer disposed between the conductive feature and the passivation structure, a protecting layer disposed along sidewalls of the conductive feature, and a passivation layer over the conductive feature and the protecting layer.

Abstract: A method includes forming a patterned mask comprising a first opening, plating a conductive feature in the first opening, depositing a passivation layer on a sidewall and a top surface of the conductive feature, and patterning the passivation layer to form a second opening in the passivation layer. The passivation layer has sidewalls facing the second opening. A planarization layer is dispensed on the passivation layer. The planarization layer is patterned to form a third opening. After the planarization layer is patterned, a portion of the planarization layer is located in the second opening and covers the sidewalls of the passivation layer. An Under-Bump Metallurgy (UBM) is formed to extend into the third opening.

Abstract: An audio transmission device coupled to an electronic device and including a detection circuit, a vendor-defined class circuit, and an audio class circuit is provided. The detection circuit detects an external sound to generate an input voice. The vendor-defined class circuit provides a first voice signal to the electronic device according to the input voice. An audio processing application program of the electronic device processes the first voice signal to generate a processed voice to the vendor-defined class circuit. The audio class circuit receives the processed voice from the vendor-defined class circuit, uses the processed voice as a second voice signal, and provides the second voice signal to the media manager of the electronic device.

Abstract: A method of manufacturing a semiconductor structure forming a redistribution layer (RDL); forming a conductive pad over the RDL; performing a first electrical test through the conductive pad; bonding a first die over the RDL by a connector; disposing a first underfill material to surround the connector; performing a second electrical test through the conductive pad; disposing a second die over the first die and the conductive pad; and disposing a second underfill material to surround the second die, wherein the conductive pad is at least partially in contact with the second underfill material, and is protruded from the RDL during the first electrical test and the second electrical test.

Abstract: Semiconductor structures and method of forming the same are provided. A semiconductor structure according to the present disclosure includes a contact feature in a dielectric layer, a passivation structure over the dielectric layer, a conductive feature over the passivation structure, a seed layer disposed between the conductive feature and the passivation structure, a protecting layer disposed along sidewalls of the conductive feature, and a passivation layer over the conductive feature and the protecting layer.

Abstract: A method of manufacturing a semiconductor structure forming a redistribution layer (RDL); forming a conductive pad over the RDL; performing a first electrical test through the conductive pad; bonding a first die over the RDL by a connector; disposing a first underfill material to surround the connector; performing a second electrical test through the conductive pad; disposing a second die over the first die and the conductive pad; and disposing a second underfill material to surround the second die, wherein the conductive pad is at least partially in contact with the second underfill material, and is protruded from the RDL during the first electrical test and the second electrical test.

Abstract: A method includes forming a patterned mask comprising a first opening, plating a conductive feature in the first opening, depositing a passivation layer on a sidewall and a top surface of the conductive feature, and patterning the passivation layer to form a second opening in the passivation layer. The passivation layer has sidewalls facing the second opening. A planarization layer is dispensed on the passivation layer. The planarization layer is patterned to form a third opening. After the planarization layer is patterned, a portion of the planarization layer is located in the second opening and covers the sidewalls of the passivation layer. An Under-Bump Metallurgy (UBM) is formed to extend into the third opening.

Abstract: A circuit test structure includes an interposer for electrically connecting to a chip, wherein the interposer includes a conductive line, and the conductive line extends along at least two side of the interposer. The circuit test structure further includes a plurality of electrical connections to the conductive line. The circuit test structure further includes a testing site electrically connected to the conductive line, wherein the testing site is on an opposite surface of the interposer from the plurality of electrical connections.

Abstract: A circuit test structure including an interposer for electrically connection to a chip, wherein the interposer includes a conductive line, and the conductive line traces a perimeter of the interposer. The circuit test structure further includes at least three electrical connections to the conductive line. The circuit test structure further includes a testing site. The circuit test structure further includes a through substrate via (TSV) connecting the testing site to the conductive line.

Abstract: A dock and an operation method therefor are provided. The dock is suitable for propping up a mobile communication device. The dock includes an audio-receiving circuit, a rotating module, a communication circuit, and a controller circuit. The controller circuit is coupled to the audio-receiving circuit, the rotating module, and the communication circuit. The controller circuit transmits at least one of a plurality of audio signals generated by the audio-receiving circuit to the mobile communication device through the communication circuit, and determines an audio direction of an audio source according to the plurality of audio signals. The controller circuit controls the rotating module to rotate according to the audio direction, so as to bring the mobile communication device face toward the audio source.

Abstract: An audio transmission device coupled to an electronic device and including a detection circuit, a vendor-defined class circuit, and an audio class circuit is provided. The detection circuit detects an external sound to generate an input voice. The vendor-defined class circuit provides a first voice signal to the electronic device according to the input voice. An audio processing application program of the electronic device processes the first voice signal to generate a processed voice to the vendor-defined class circuit. The audio class circuit receives the processed voice from the vendor-defined class circuit, uses the processed voice as a second voice signal, and provides the second voice signal to the media manager of the electronic device.

Abstract: An integrated fan-out package includes a first semiconductor chip, a plurality of through integrated fan-out vias, an encapsulation layer and a redistribution layer structure. The first semiconductor chip includes a heat dissipation layer, and the heat dissipation layer covers at least 30 percent of a first surface of the first semiconductor chip. The through integrated fan-out vias are aside the first semiconductor chip. The encapsulation layer encapsulates the through integrated fan-out vias. The redistribution layer structure is at a first side of the first semiconductor chip and thermally connected to the heat dissipation layer of the first semiconductor chip.

Abstract: A method of manufacturing a semiconductor structure forming a redistribution layer (RDL); forming a conductive pad over the RDL; performing a first electrical test through the conductive pad; bonding a first die over the RDL by a connector; disposing a first underfill material to surround the connector; performing a second electrical test through the conductive pad; disposing a second die over the first die and the conductive pad; and disposing a second underfill material to surround the second die, wherein the conductive pad is at least partially in contact with the second underfill material, and is protruded from the RDL during the first electrical test and the second electrical test.

Abstract: A method of manufacturing a semiconductor structure includes forming a redistribution layer (RDL); forming a conductive member over the RDL; performing a first electrical test through the conductive member; disposing a first die over the RDL; performing a second electrical test through the conductive member; and disposing a second die over the first die and the conductive member.

Abstract: A dock and an operation method therefor are provided. The dock is suitable for propping up a mobile communication device. The dock includes an audio-receiving circuit, a rotating module, a communication circuit, and a controller circuit. The controller circuit is coupled to the audio-receiving circuit, the rotating module, and the communication circuit. The controller circuit transmits at least one of a plurality of audio signals generated by the audio-receiving circuit to the mobile communication device through the communication circuit, and determines an audio direction of an audio source according to the plurality of audio signals. The controller circuit controls the rotating module to rotate according to the audio direction, so as to bring the mobile communication device face toward the audio source.