Abstract: Integrated fan-out packages and methods of forming the same are disclosed. An integrated fan-out package includes a first semiconductor chip, a plurality of through integrated fan-out vias, an encapsulation layer and a redistribution layer structure. The first semiconductor chip includes a heat dissipation layer, and the heat dissipation layer covers at least 30 percent of a first surface of the first semiconductor chip. The through integrated fan-out vias are aside the first semiconductor chip. The encapsulation layer encapsulates the through integrated fan-out vias. The redistribution layer structure is at a first side of the first semiconductor chip and thermally connected to the heat dissipation layer of the first semiconductor chip.

Abstract: A shoe sole molding device adapted for heating and molding a foamed material into a shoe sole includes a mold seat unit, a core unit, an induction heating unit and a coil unit. The core unit is disposed in a core receiving space of the mold seat unit, and defines a cavity for receiving the foamed material. The induction heating unit is disposed around the core unit, and has magnetic permeability greater than that of the core unit. The coil unit is disposed around the induction heating unit, and provides electromagnetic wave to induce heating in the induction heating unit to heat up the core unit and the foamed material.

Abstract: A circuit test structure including an interposer for electrically connection to a chip, wherein the interposer includes a conductive line, and the conductive line traces a perimeter of the interposer. The circuit test structure further includes at least three electrical connections to the conductive line. The circuit test structure further includes a testing site. The circuit test structure further includes a through substrate via (TSV) connecting the testing site to the conductive line.

Abstract: Integrated fan-out packages and methods of forming the same are disclosed. An integrated fan-out package includes a first semiconductor chip, a plurality of through integrated fan-out vias, an encapsulation layer and a redistribution layer structure. The first semiconductor chip includes a heat dissipation layer, and the heat dissipation layer covers at least 30 percent of a first surface of the first semiconductor chip. The through integrated fan-out vias are aside the first semiconductor chip. The encapsulation layer encapsulates the through integrated fan-out vias. The redistribution layer structure is at a first side of the first semiconductor chip and thermally connected to the heat dissipation layer of the first semiconductor chip.

Abstract: A circuit test structure includes: a chip including a conductive line which traces a perimeter of the chip; an interposer electrically connected to the chip; and a Kelvin test structure including: at least three electrical connections to the conductive line; and a testing site. The Kelvin test structure is configured to electrically connect the testing site to the conductive line.

Abstract: A semiconductor device includes a first die having a first active surface and a first backside surface opposite the first active surface, a second die having a second active surface and a second backside surface opposite the second active surface, and an interposer, the first active surface of the first die being electrically coupled to a first side of the interposer, the second active surface of the second die being electrically coupled to a second side of the interposer. The semiconductor device also includes a first connector over the interposer, a first encapsulating material surrounding the second die, the first encapsulating material having a first surface over the interposer, and a via electrically coupling the first connector and the interposer. A first end of the via is substantially coplanar with the first surface of the first encapsulating material.

Abstract: Integrated fan-out packages and methods of forming the same are disclosed. An integrated fan-out package includes a first semiconductor chip, a plurality of through integrated fan-out vias, an encapsulation layer and a redistribution layer structure. The first semiconductor chip includes a heat dissipation layer, and the heat dissipation layer covers at least 30 percent of a first surface of the first semiconductor chip. The through integrated fan-out vias are aside the first semiconductor chip. The encapsulation layer encapsulates the through integrated fan-out vias. The redistribution layer structure is at a first side of the first semiconductor chip and thermally connected to the heat dissipation layer of the first semiconductor chip.

Abstract: A trajectory prediction system for predicting a point of impact of an object shot from a ballistic device is provided. The trajectory prediction system includes an objective lens, an eyepiece lens optically coupled with the objective lens, an image sensor, a processor, and a display electrically connected to the processor and the image sensor. The image sensor, the processor, and the display are disposed between the objective lens and the eyepiece lens. When an external light reaches the image sensor through the objective lens, the image sensor transmits a first signal to the display, and the display shows an image according to the first signal. The processor calculates the trajectory of the object and transmits a second signal to the display, and the display simultaneously shows the image and at least one predictive point of impact according to the first and second signals.

Abstract: A regeneration membrane is provided for dentistry. The traditional thin collagen is turned into a flowable and shapeable collagen gel. A photo-crosslinking agent (i.e. riboflavin (vitamin B2)) is added in a biomedical-level collagen gel to obtain the shapeable collagen gel. The shapeable collagen gel is filled in a pre-filled syringe. The shapeable collagen gel is squeezed to a destined position for paving and shaping. Then, crosslinking is processed through UV illumination for curing. Flowability is achieved for applying. After applying, solidification is finished through illumination to turn liquid into solid. Thus, a regeneration membrane is formed with biological tolerance.

Abstract: A method of manufacturing a semiconductor structure includes forming a redistribution layer (RDL); forming a conductive member over the RDL; performing a first electrical test through the conductive member; disposing a first die over the RDL; performing a second electrical test through the conductive member; and disposing a second die over the first die and the conductive member.

Abstract: In a process, at least one circuit element is formed in a substrate. A conductive layer is formed over the substrate and in electrical contact with the at least one circuit element. Electrostatic charges are discharged from the substrate via the conductive layer.

Abstract: A circuit test structure includes: a chip including a conductive line which traces a perimeter of the chip; an interposer electrically connected to the chip; and a Kelvin test structure including: at least three electrical connections to the conductive line; and a testing site. The Kelvin test structure is configured to electrically connect the testing site to the conductive line.

Abstract: A stacked structure comprises a semiconductor chip which includes a substrate having at least one substrate via hole penetrating through the substrate; at least one backside metal layer formed on a backside of the substrate covering an inner surface of the substrate via hole and at least part of the backside of the substrate; at least one front-side metal layer formed on the front-side of the substrate and electrically connected to the at least one backside metal layer on a top of at least one of the at least one substrate via hole; at least one electronic device formed on the front-side of the substrate and electrically connected to the at least one front-side metal layer; and at least one metal bump formed on at least one of the backside metal layer and the front-side metal layer.

Abstract: A method of testing a three-dimensional integrated circuit (3DIC) includes applying a voltage through at least one testing element and at least one conductive line, wherein the at least one conductive line traces a perimeter of at least one of a top chip or an interposer substantially parallel to an outer edge of the at least one top chip or the interposer, and the at least one conductive line is configured to electrically connect a plurality of conductive connectors. The method further includes measuring a current responsive to the applied voltage. The method further includes determining an integrity of the 3DIC based on the measured current.

Abstract: A method of forming a semiconductor memory storage device that includes forming first and second doped regions of a first type in a semiconductor substrate and laterally spaced from one another, forming a gate dielectric extends over the semiconductor substrate between the first and second doped regions, forming a floating gate on the gate dielectric, and forming an ultraviolet (UV) light blocking material vertically disposed above the floating gate such that the floating gate remains electrically charged after the semiconductor memory storage device is exposed to UV light.

Abstract: A driver circuit for receiving input data and generating an output signal to a termination element is provided, wherein the input data has a first bit and second bit, and the driver circuit includes: a pair of differential output terminals for outputting the output signal, wherein the pair of differential output terminals has a first output terminal and a second output terminal; at least one current mode drive unit, coupled to the pair of differential output terminals, for outputting a current from one of the first output terminal and the second output terminal, and receiving the current from the other of the first output terminal and the second output terminal according to the first bit; and at least one voltage mode drive unit, coupled to the pair of differential output terminals, for providing voltages to the first output terminal and the second output terminal according to the second bit.

Abstract: A driver circuit for receiving input data and generating an output signal to a termination element is disclosed, wherein the input data has a first bit and second bit, and the driver circuit includes: a pair of differential output terminals, arranged for outputting the output signal, wherein the pair of differential output terminals has a first output terminal and a second output terminal; a current mode drive unit, coupled to the pair of differential output terminals, for outputting a current from one of the first output terminal and the second output terminal, and receiving the current from the other of the first output terminal and the second output terminal according to the first bit; and a voltage mode drive unit, coupled to the pair of differential output terminals, for providing voltages to the first output terminal and the second output terminal according to at least the second bit.

Abstract: In a process, at least one circuit element is formed in a substrate. A conductive layer is formed over the substrate and in electrical contact with the at least one circuit element. Electrostatic charges are discharged from the substrate via the conductive layer.

Abstract: In a process, at least one circuit element is formed in a substrate. A conductive layer is formed over the substrate and in electrical contact with the at least one circuit element. Electrostatic charges are discharged from the substrate via the conductive layer.

Abstract: A method for performing loop unrolled decision feedback equalization (DFE) and an associated apparatus are provided.