Abstract: A small molecule compound or salt thereof or solvates of them is provided, wherein the small molecule compound comprises a compound represented by Formula (I) as shown below:

Abstract: A mixed reality display device includes a waveguide element, an image light source, a first diffractive optical element lens array and a second diffractive optical element lens array. The image light source is located in the waveguide element. The first diffractive optical element lens array is located on a first side of the waveguide element facing a human eye, the first diffractive optical element lens array includes a plurality of diffractive optical element lenses, and any of the diffractive optical element lenses is configured to converge a light. The second diffractive optical element lens array is located on a second side of the waveguide element opposite to the first side, the second diffractive optical element lens array includes a plurality of diffractive optical element lenses, and any of the diffractive optical element lenses is configured to diverge or converge a light.

Abstract: A polishing apparatus includes a platen, a polishing head, a first liquid source, a second liquid source, and a mixed liquid feeder. The platen includes a polishing pad having a polishing surface for polishing a substrate. The polishing head is disposed over the platen and configured to hold the substrate. The first liquid source is configured to provide first polishing liquid containing a first proportion of a component reacting with a material on the substrate. The second liquid source is configured to provide second polishing liquid containing a second proportion of the component less than the first proportion. The mixed liquid feeder is coupled to the first liquid source and the second liquid source, wherein the mixed liquid feeder is configured to mix the first polishing liquid and the second polishing liquid into a mixed polishing liquid and feed the mixed polishing liquid to the polishing pad.

Abstract: A method includes polishing a wafer on a polishing pad, performing conditioning on the polishing pad using a disk of a pad conditioner, and conducting a heat-exchange media into the disk. The heat-exchange media conducted into the disk has a temperature different from a temperature of the polishing pad.

Abstract: A chemical mechanical planarization system includes a chemical mechanical planarization pad that rotates during a chemical mechanical planarization process. A chemical mechanical planarization head places a semiconductor wafer in contact with the chemical mechanical planarization pad during the process. A slurry supply system supplies a slurry onto the pad during the process. A pad conditioner conditions the pad during the process. An impurity removal system removes debris and impurities from the slurry.

Abstract: A method for inspecting a light-emitting diode package is provided. The inspecting method comprises the following steps. First, provide a light-emitting diode package, wherein the light-emitting diode package includes a light-emitting diode chip, a lead frame and an encapsulation body. The light-emitting diode chip is disposed on the lead frame and the height of the lead frame is higher than that of the light-emitting diode chip. The encapsulation body covers the light-emitting diode chip and a portion of the lead frame. Next, remove a portion of the encapsulation body to expose the upper surface of the light-emitting diode chip.

Abstract: To make it easier to lift and move a wheelchair by keeping casters from hanging even when the wheelchair is lifted by one hand, a wheelchair includes a folding mechanism that couples a left-side support arm and a right-side support arm foldably in a left-right direction of the vehicle body. The folding mechanism includes an operation part for use in changing a state of a left-side support arm and a right-side support arm from one of a folded state or an unfolded state to another. The operation part is arranged between a rear drive wheel and a caster in a side view of the vehicle body.

Abstract: The present utility model relates generally to an improved electrode structure, comprising of: an electrode material, and the electrode material has weight percentage of 80-96%; an electrically conductive material, and the electrically conductive material has weight percentage of 2-10%; an adhesive, and the adhesive has a weight percentage of 2-10%; a low toxicity and environmentally friendly solvent, and the low toxicity environmentally friendly solvent has weight percentage of 20-70% in positive electrode material, and 100-150% in negative electrode material; wherein the improved electrode structure was given with treatment of baking temperature of 50-150° C., with process time of 8 to 12 hours.

Abstract: A method includes cropping a plurality of images from a layout of an integrated circuit, generating a first plurality of hash values, each from one of the plurality of images, loading a second plurality of hash values stored in a hotspot library, and comparing each of the first plurality of hash values with each of the second plurality of hash values. The step of comparing includes calculating a similarity value between the each of the first plurality of hash values and the each of the second plurality of hash values. The method further includes comparing the similarity value with a pre-determined threshold similarity value, and in response to a result that the similarity value is greater than the pre-determined threshold similarity value, recording a position of a corresponding image that has the result. The position is the position of the corresponding image in the layout.

Abstract: A strap member is provided and includes a strap body and a plurality of hook portions. The strap member includes a first surface and a second surface. Each of the plurality of hook portions includes a hole structure and at least one hook structure. The hole structure penetrates through the strap body and includes a first opening formed on the first surface and a second opening formed on the second surface. The at least one hook structure is at least partially disposed inside the hole structure and connected to a hole wall of the hole structure. Besides, a related strap assembly is also provided.

Abstract: A chemical mechanical planarization (CMP) tool includes a platen and a polishing pad attached to the platen, where a first surface of the polishing pad facing away from the platen includes a first polishing zone and a second polishing zone, where the first polishing zone is a circular region at a center of the first surface of the polishing pad, and the second polishing zone is an annular region around the first polishing zone, where the first polishing zone and the second polishing zone have different surface properties.

Abstract: A chemical mechanical planarization system includes a chemical mechanical planarization pad that rotates during a chemical mechanical planarization process. A chemical mechanical planarization head places a semiconductor wafer in contact with the chemical mechanical planarization pad during the process. A slurry supply system supplies a slurry onto the pad during the process. A pad conditioner conditions the pad during the process. An impurity removal system removes debris and impurities from the slurry.

Abstract: A method of evaluating a thickness of a film on a substrate includes detecting atomic force responses of the film to exposure of electromagnetic radiation in the infrared portion of the electromagnetic spectrum. The use of atomic force microscopy to evaluate thicknesses of thin films avoids underlayer noise commonly encountered when optical metrology techniques are utilized to evaluate film thicknesses. Such underlayer noise adversely impacts the accuracy of the thickness evaluation.

Abstract: Embodiments of the present disclosure relate a CMP tool and methods for planarization a substrate. Particularly, embodiments of the present disclosure provide a substrate transporter for use in a CMP tool. The transporter may be used transport and/or carry substrates among various polishers and cleaners in a CMP tool while preventing the substrates from drying out during transportation. By keeping surfaces of the substrates wet during substrate waiting time or idle time in the CMP tool, embodiments of the present disclosure prevent many types of defects, such as byproducts, agglomerated abrasives, pad debris, slurry residues, from accumulate on the substrate surface during CMP processing, thus improve yields and device performance.

Abstract: A method of cleaning and polishing a backside surface of a semiconductor wafer is provided. The method includes placing an abrasive brush, comprising an abrasive tape wound around an outer surface of a brush member of the abrasive brush, on the backside surface of the semiconductor wafer. The method also includes rotating the brush member to polish the backside surface of the semiconductor wafer by abrasive grains formed on the abrasive tape and to clean the backside surface of the semiconductor wafer by the brush member which is not covered by the abrasive tape.

Abstract: A method includes cropping a plurality of images from a layout of an integrated circuit, generating a first plurality of hash values, each from one of the plurality of images, loading a second plurality of hash values stored in a hotspot library, and comparing each of the first plurality of hash values with each of the second plurality of hash values. The step of comparing includes calculating a similarity value between the each of the first plurality of hash values and the each of the second plurality of hash values. The method further includes comparing the similarity value with a pre-determined threshold similarity value, and in response to a result that the similarity value is greater than the pre-determined threshold similarity value, recording a position of a corresponding image that has the result. The position is the position of the corresponding image in the layout.

Abstract: A semiconductor processing tool includes a cleaning chamber configured to perform a post-chemical mechanical polishing/planarization (post-CMP) cleaning operation in an oxygen-free (or in a near oxygen-free) manner. An inert gas may be provided into the cleaning chamber to remove oxygen from the cleaning chamber such that the post-CMP cleaning operation may be performed in an oxygen-free (or in a near oxygen-free) environment. In this way, the post-CMP cleaning operation may be performed in an environment that may reduce oxygen-causing corrosion of metallization layers and/or metallization structures on and/or in the semiconductor wafer, which may increase semiconductor processing yield, may decrease semiconductor processing defects, and/or may increase semiconductor processing quality, among other examples.

Abstract: A chemical mechanical polishing device is provided according to some embodiments. The chemical mechanical polishing device comprises a polishing pad. The polishing pad includes a plurality of stacks of first pad fractions and a plurality of stacks of second pad fractions. The first pad fractions and the second pad fractions have different hardness. The stacks of first pad fractions and the stacks of the second pad fractions are arranged with a pattern corresponding to a predetermined feature of a structure to be polished by the chemical mechanical polishing device. The predetermined feature may include a surface profile or a material of the structure to be polished.

Abstract: A method of cleaning and polishing a backside surface of a semiconductor wafer is provided. The method includes placing an abrasive brush, comprising an abrasive tape wound around an outer surface of a brush member of the abrasive brush, on the backside surface of the semiconductor wafer. The method also includes rotating the brush member to polish the backside surface of the semiconductor wafer by abrasive grains formed on the abrasive tape and to clean the backside surface of the semiconductor wafer by the brush member which is not covered by the abrasive tape.