Patents by Inventor Chih-Hung Chen

Chih-Hung Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10418271
    Abstract: According to an exemplary embodiment, a method of forming an isolation layer is provided. The method includes the following operations: providing a substrate; providing a vertical structure having a first layer over the substrate; providing a first interlayer dielectric over the first layer; performing CMP on the first interlayer dielectric; and etching back the first interlayer dielectric and the first layer to form the isolation layer corresponding to a source of the vertical structure.
    Type: Grant
    Filed: June 13, 2014
    Date of Patent: September 17, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Teng-Chun Tsai, Li-Ting Wang, De-Fang Chen, Cheng-Tung Lin, Chih-Tang Peng, Chien-Hsun Wang, Bing-Hung Chen, Huan-Just Lin, Yung-Cheng Lu
  • Patent number: 10410697
    Abstract: A sensing circuit includes a sensing stage. The sensing stage includes a voltage clamp, a P-type transistor and an N-type transistor. The voltage clamp receives a first power supply voltage and generates a second power supply voltage. The source terminal of the P-type transistor receives the second power supply voltage. The gate terminal of the P-type transistor receives a cell current from a selected circuit of a non-volatile memory. The drain terminal of the N-type transistor is connected with the drain terminal of the P-type transistor. The gate terminal of the N-type transistor receives a bias voltage. The source terminal of the N-type transistor receives a ground voltage. In a sensing period, the second power supply voltage from the voltage clamp is fixed and lower than the first power supply voltage.
    Type: Grant
    Filed: April 2, 2018
    Date of Patent: September 10, 2019
    Assignee: EMEMORY TECHNOLOGY INC.
    Inventors: Chih-Chun Chen, Chun-Hung Lin, Cheng-Da Huang
  • Publication number: 20190272873
    Abstract: The present disclosure, in some embodiments, relates to a method of operating a resistive random access memory (RRAM) array. The method includes applying a word-line voltage to a selected word-line during a read operation. A non-zero voltage is applied to a selected bit-line during the read operation. A first voltage is applied to a selected source-line during the read operation. The first voltage is smaller than a second voltage applied to an unselected source-line during the read operation.
    Type: Application
    Filed: May 16, 2019
    Publication date: September 5, 2019
    Inventors: Chin-Chieh Yang, Chih-Yang Chang, Chang-Sheng Liao, Hsia-Wei Chen, Jen-Sheng Yang, Kuo-Chi Tu, Sheng-Hung Shih, Wen-Ting Chu, Manish Kumar Singh, Chi-Tsai Chen
  • Patent number: 10403804
    Abstract: LED chip packaging assembly that facilitates an integrated method for mounting LED chips as a group to be pre-wired to be electrically connected to each other through a pattern of extendable metal wiring lines is provided. LED chips which are electrically connected to each other through extendable metal wiring lines, replace pick and place mounting and the wire bonding processes of the LED chips, respectively. Wafer level MEMS technology is utilized to form parallel wiring lines suspended and connected to various contact pads. Bonding wires connecting the LED chips are made into horizontally arranged extendable metal wiring lines which can be in a spring shape, and allowing for expanding and contracting of the distance between the connected LED chips. A tape is further provided to be bonded to the LED chips, and extended in size to enlarge distance between the LED chips to exceed the one or more prearranged distances.
    Type: Grant
    Filed: June 13, 2018
    Date of Patent: September 3, 2019
    Assignees: EPISTAR CORPORATION, IMEC TAIWAN CO.
    Inventors: Guan Ru He, Jui-Hung Yeh, Kevin T. Y. Huang, Chih Chung Chen
  • Patent number: 10398357
    Abstract: The present invention provides smart bed systems and the operating methods of the smart bed systems. The smart bed systems detect physiological data and sleeping quality with optical fibers which with strong resistance to electromagnetic interference. The smart bed systems do not require the users to wear any wearable devices. The smart bed systems also provide several functions, such as automatic night light, vibration-based alarm, anti-snoring assistance, and scenario-based appliance controls.
    Type: Grant
    Filed: September 11, 2017
    Date of Patent: September 3, 2019
    Assignees: BEDDING WORLD CO., LTD., HUIJIA HEALTH LIFE TECHNOLOGY CO., LTD.
    Inventors: Ying-Chieh Chen, Shu-Chen Yang, Chih-Huan Liu, Ta-Hsiang Chen, Hsing-Hung Chen
  • Patent number: 10391608
    Abstract: A wafer polishing apparatus is described herein. The wafer polishing apparatus includes a polish module configured to apply air pressure to a first surface of a wafer while performing a polishing process on a second surface of the wafer. In some implementations, the polish module is further configured to perform a cleaning process and/or a drying process on the second surface of the wafer, such that the same wafer polishing apparatus is configured to perform the polishing process, the cleaning process, and/or the drying process. In some implementations, the polishing module is further configured to air seal edges of the wafer during the polishing process, the cleaning process, and/or the drying process.
    Type: Grant
    Filed: December 27, 2017
    Date of Patent: August 27, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chih-Hung Chen, Chia-Jung Hsu, Yi-An Lin
  • Patent number: 10396157
    Abstract: A semiconductor device includes semiconductor layer having first device region and second device region. A shallow trench isolation (STI) structure is in the semiconductor layer and located at periphery of the first and second device regions. A first and second insulating layers are on the semiconductor layer and respectively located in the first and second device regions. A first gate structure is located on the first insulating layer. A source region and a drain region are in the semiconductor layer and are located at two sides of the first gate structure. A gate doped region is in a surface region of the semiconductor layer in the second device region to serve as a second gate structure. A channel layer is located on the second insulating layer. A source layer and a drain layer are on the STI structure and are located at two sides of the channel layer.
    Type: Grant
    Filed: March 6, 2018
    Date of Patent: August 27, 2019
    Assignee: United Microelectronics Corp.
    Inventors: Shin-Hung Li, Kuan-Chuan Chen, Nien-Chung Li, Wen-Fang Lee, Chih-Chung Wang
  • Publication number: 20190259944
    Abstract: A semiconductor structure includes a memory region. A memory structure is disposed on the memory region. The memory structure includes a first electrode, a resistance variable layer, protection spacers and a second electrode. The first electrode has a top surface and a first outer sidewall surface on the memory region. The resistance variable layer has a first portion and a second portion. The first portion is disposed over the top surface of the first electrode and the second portion extends upwardly from the first portion. The protection spacers are disposed over a portion of the top surface of the first electrode and surround the second portion of the resistance variable layer. The protection spacers are configurable to protect at least one conductive path in the resistance variable layer. The protection spacers have a second outer sidewall surface substantially aligned with the first outer sidewall surface of the first electrode.
    Type: Application
    Filed: April 30, 2019
    Publication date: August 22, 2019
    Inventors: Kuo-Chi Tu, Chih-Yang Chang, Hsia-Wei Chen, Chin-Chieh Yang, Sheng-Hung Shih, Wen-Chun You, Wen-Ting Chu, Yu-Wen Liao
  • Publication number: 20190258179
    Abstract: The present disclosure provides a method. The method includes patterning a substrate by a patterning tool; collecting a plurality of overlay errors from a plurality of fields on the substrate; identifying noise from the plurality of overlay errors by applying a first filtering operation and a second filtering operation that is different from the first filtering operation. The method further includes grouping the plurality of overlay errors that are not identified as noise into a set of filtered overlay errors; calculating an overlay compensation based on the set of filtered overlay errors; and performing a compensation process to the patterning tool according to the overlay compensation.
    Type: Application
    Filed: May 3, 2019
    Publication date: August 22, 2019
    Inventors: Weimin Hu, Yang-Hung Chang, Kai-Hsiung Chen, Chun-Ming Hu, Chih-Ming Ke
  • Patent number: 10388868
    Abstract: A semiconductor structure includes a memory region. A memory structure is disposed on the memory region. The memory structure includes a first electrode, a resistance variable layer, protection spacers and a second electrode. The first electrode has a top surface and a first outer sidewall surface on the memory region. The resistance variable layer has a first portion and a second portion. The first portion is disposed over the top surface of the first electrode and the second portion extends upwardly from the first portion. The protection spacers are disposed over a portion of the top surface of the first electrode and surround the second portion of the resistance variable layer. The protection spacers are configurable to protect at least one conductive path in the resistance variable layer. The protection spacers have a second outer sidewall surface substantially aligned with the first outer sidewall surface of the first electrode.
    Type: Grant
    Filed: May 23, 2016
    Date of Patent: August 20, 2019
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuo-Chi Tu, Chih-Yang Chang, Hsia-Wei Chen, Chin-Chieh Yang, Sheng-Hung Shih, Wen-Chun You, Wen-Ting Chu, Yu-Wen Liao
  • Publication number: 20190247522
    Abstract: A biocompatible magnetic material containing an iron oxide nanoparticle and one or more biocompatible polymers, each having formula (I) below, covalently bonded to the iron oxide nanoparticle: in which each of variables R, L, x, and y is defined herein, the biocompatible magnetic material contains 4-15% Fe(II) ions relative to the total iron ions. Also disclosed in a method of preparing the biocompatible magnetic material.
    Type: Application
    Filed: November 29, 2018
    Publication date: August 15, 2019
    Inventors: Wen-Yuan Hsieh, Yuan-Hung Hsu, Chia-Wen Huang, Ming-Cheng Wei, Chih-Lung Chen, Shian-Jy Wang
  • Patent number: 10381495
    Abstract: A photodetecting device and method of using the same are provided. The photodetecting device includes a transistor, a silicon nano-channel and a filter dye layer. The transistor includes a source, a drain and a gate. The silicon nano-channel connects the source and the drain, and is configured to receive light. The filter dye layer is over a light-receiving surface of the silicon nano-channel.
    Type: Grant
    Filed: December 3, 2015
    Date of Patent: August 13, 2019
    Assignee: NATIONAL CHIAO TUNG UNIVERSITY
    Inventors: Yuh-Shyong Yang, Chien-Hung Chen, Chih-Heng Lin
  • Publication number: 20190244952
    Abstract: A semiconductor apparatus including a substrate, an electrostatic discharge protection device, a resistor device, and a first metal layer is provided. The substrate defines a pad area and includes a first area and a second area. The first area has a recess, the second area is disposed in the recess, and the pad area is partially overlapped with the first area and the second area. The electrostatic discharge protection device is disposed in the first area of the substrate. The resistor device is disposed in the second area of the substrate. The first metal layer is disposed above and electrically connected to the electrostatic discharge protection device and the resistor device.
    Type: Application
    Filed: May 31, 2018
    Publication date: August 8, 2019
    Applicant: UBIQ Semiconductor Corp.
    Inventors: Yi-Yun Tsai, Chih-Hung Chen, Chin-Fu Chen
  • Publication number: 20190245038
    Abstract: A semiconductor device includes semiconductor layer having first device region and second device region. A shallow trench isolation (STI) structure is in the semiconductor layer and located at periphery of the first and second device regions. A first and second insulating layers are on the semiconductor layer and respectively located in the first and second device regions. A first gate structure is located on the first insulating layer. A source region and a drain region are in the semiconductor layer and are located at two sides of the first gate structure. A gate doped region is in a surface region of the semiconductor layer in the second device region to serve as a second gate structure. A channel layer is located on the second insulating layer. A source layer and a drain layer are on the STI structure and are located at two sides of the channel layer.
    Type: Application
    Filed: March 6, 2018
    Publication date: August 8, 2019
    Applicant: United Microelectronics Corp.
    Inventors: Shin-Hung Li, Kuan-Chuan Chen, Nien-Chung Li, Wen-Fang Lee, Chih-Chung Wang
  • Patent number: 10373861
    Abstract: A semiconductor structure includes a substrate having a plurality of fin structures thereon, an isolation oxide structure in the substrate between adjacent two of the plurality of fin structures, a gate disposed on the plurality of fin structures, a gate dielectric layer disposed between the plurality of fin structures and the gate, and a source/drain doped region in each of the plurality of fin structures. The isolation oxide structure has a concave, curved top surface.
    Type: Grant
    Filed: July 3, 2018
    Date of Patent: August 6, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Chi-Ying Hsieh, Chih-Jung Chen, Chien-Hung Chen, Chih-Yueh Li, Cheng-Pu Chiu, Shih-Min Lu, Yung-Sung Lin
  • Publication number: 20190236326
    Abstract: A fingerprint sensor includes a die, a plurality of conductive structures, an encapsulant, a plurality of conductive patterns, a first dielectric layer, a second dielectric layer, and a redistribution structure. The die has an active surface and a rear surface opposite to the active surface. The conductive structures surround the die. The encapsulant encapsulates the die and the conductive structures. The conductive patterns are over the die and are electrically connected to the die and the conductive structures. Top surfaces of the conductive patterns are flat. The first dielectric layer is over the die and the encapsulant. A top surface of the first dielectric layer is coplanar with top surfaces of the conductive patterns. The second dielectric layer covers the first dielectric layer and the conductive patterns. The redistribution structure is over the rear surface of the die.
    Type: Application
    Filed: January 30, 2018
    Publication date: August 1, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Hsuan Tai, Chih-Hua Chen, Hao-Yi Tsai, Yu-Chih Huang, Chia-Hung Liu, Ting-Ting Kuo, Ying-Cheng Tseng
  • Publication number: 20190229265
    Abstract: Some embodiments relate to a device. The device includes a top electrode and a via disposed over the top electrode. A peripheral upper surface of the top electrode is above a central upper surface of the top electrode, and a tapered inner sidewall of the top electrode connects the peripheral upper surface to the central upper surface. The via establishes electrical contact with the tapered inner sidewall but is spaced apart from the central upper surface.
    Type: Application
    Filed: April 2, 2019
    Publication date: July 25, 2019
    Inventors: Hsia-Wei Chen, Wen-Ting Chu, Kuo-Chi Tu, Chih-Yang Chang, Chin-Chieh Yang, Yu-Wen Liao, Wen-Chun You, Sheng-Hung Shih
  • Publication number: 20190224810
    Abstract: A polishing pad includes a pad layer and one or more polishing structures over an upper surface of the pad layer, where each of the one or more polishing structures has a pre-determined shape and is formed at a pre-determined location of the pad layer, where the one or more polishing structures comprise at least one continuous line shaped segment extending along the upper surface of the pad layer, where each of the one or more polishing structures is a homogeneous material.
    Type: Application
    Filed: July 2, 2018
    Publication date: July 25, 2019
    Inventors: Chih Hung Chen, Kei-Wei Chen, Ying-Lang Wang
  • Publication number: 20190221469
    Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate having a fin-shaped structure thereon; forming a single diffusion break (SDB) structure in the substrate to divide the fin-shaped structure into a first portion and a second portion; forming a first gate structure on the SDB structure; forming an interlayer dielectric (ILD) layer on the first gate structure; removing the first gate structure to form a first recess; and forming a dielectric layer in the first recess.
    Type: Application
    Filed: January 17, 2018
    Publication date: July 18, 2019
    Inventors: Chih-Kai Hsu, Ssu-I Fu, Chun-Ya Chiu, Chi-Ting Wu, Chin-Hung Chen, Yu-Hsiang Lin
  • Patent number: 10355697
    Abstract: An oscillator configured to generate an oscillation signal is provided. The oscillator includes a transistor pair and a cross-coupled transistor pair. The transistor pair is coupled to a first current source and has a first transconductance. The first transconductance is changed in response to a current value of the first current source. The cross-coupled transistor pair is coupled to a second current source and has a second transconductance. The second transconductance is changed in response to a current value of second current source. The transistor pair and the cross-coupled transistor pair are mutually coupled by a plurality of inductors. A frequency of the oscillation signal is determined according to the first transconductance and the second transconductance. Furthermore, a clock generator and a method for generating a clock signal thereof are also provided.
    Type: Grant
    Filed: October 5, 2017
    Date of Patent: July 16, 2019
    Assignee: Novatek Microelectronics Corp.
    Inventors: Chih-Hsiang Chang, Chih-Hung Chen