Abstract: The present invention provides a second use of mitochondria, which can cure a tendon injury-related disease and prevent a disease caused by a tendon injury. Specifically, the mitochondria disclosed in the present invention have the effect of repairing injured tendon cells and accelerating the healing of the tendon cells. Therefore, by administering a predetermined amount of mitochondria or a composition containing a predetermined amount of mitochondria to a part with a tendon injury, wound healing of the part with the tendon injury can be promoted, thus achieving the effect of repairing the injured tendon and further preventing a joint disease caused by the tendon injury or inflammation.

Abstract: A semiconductor device includes a single diffusion break (SDB) structure dividing a fin-shaped structure into a first portion and a second portion, an isolation structure on the SDB structure, a first spacer adjacent to the isolation structure, a metal gate adjacent to the isolation structure, a shallow trench isolation (STI around the fin-shaped structure, and a second isolation structure on the STI. Preferably, a top surface of the first spacer is lower than a top surface of the isolation structure and a bottom surface of the first spacer is lower than a bottom surface of the metal gate.

Abstract: The embodiments according to the present disclosure provide a protective solution, a kit, and a method for isolating mitochondria. The kit includes an extraction tube, a protective solution, and a suction needle. The extraction tube is used to contain cells. The protective solution is used to mix with the cells in the extraction tube to form a mixture solution, and the osmolarity of the protective solution is greater than 0 and less than or equal to 220 mOsm/L. The suction needle is used to suck the mixed solution back and forth to facilitate the release of mitochondria from cells. This method and the protective solution may isolate mitochondria from cells with high efficiency in a simple and convenient way, and the isolated mitochondria have excellent good function.

Abstract: A structure of semiconductor device is provided, including a substrate. First and second trench isolations are disposed in the substrate. A height of a portion of the substrate is between a top and a bottom of the first and second trench isolations. A gate insulation layer is disposed on the portion of the substrate between the first and second trench isolations. A first germanium (Ge) doped layer region is disposed in the portion of the substrate just under the gate insulation layer. A second Ge doped layer region is in the portion of the substrate, overlapping with the first Ge doped layer region to form a Ge gradient from high to low along a depth direction under the gate insulation layer. A fluorine (F) doped layer region is in the portion of the substrate, lower than and overlapping with the first germanium doped layer region.

Abstract: The present invention discloses a use of a mitochondrial extract to treat and/or prevent a kidney injury-related disease. Specifically, by administering the mitochondrial extract disclosed in the present invention to a patient having a kidney injury-related disease, the kidney injury-related disease can be effectively alleviated and prevented from deterioration.

Abstract: Provided is a semiconductor device, including a substrate including a pixel region, a gate structure on the substrate in the pixel region, wherein the gate structure comprises a gate dielectric layer and a gate conductive layer on the gate dielectric layer; a dielectric layer located over the substrate and the gate structure; and a contact located in the dielectric layer and electrically connected to the gate conductive layer. The contact includes a doped polysilicon layer in contact with the gate conductive layer; a metal layer located on the doped polysilicon layer, wherein a part of the metal layer is embedded in the doped polysilicon layer; a barrier layer located between the metal layer and the doped polysilicon layer; and a metal silicide layer located between the barrier layer and the doped polysilicon layer.

Abstract: The composition for improving liver function of the present disclosure includes at least one of mitochondria from autologous cells and exogenous mitochondria, and stem cells. The composition may decrease GOT and GPT indices, indicating the composition of the present disclosure may repair damaged liver and improve the regeneration ability of the damaged liver. The composition of the present disclosure may improve albumin synthesis, prothrombin synthesis and bilirubin metabolism of the liver, indicating the composition of the present disclosure may improve liver's ability of synthesis and metabolism.

Abstract: A semiconductor device includes a single diffusion break (SDB) structure dividing a fin-shaped structure into a first portion and a second portion, an isolation structure on the SDB structure, a first spacer adjacent to the isolation structure, and a metal gate adjacent to the isolation structure. Preferably, a top surface of the first spacer is lower than a top surface of the isolation structure and a bottom surface of the first spacer is lower than a bottom surface of the metal gate.

Abstract: A high voltage transistor structure including a substrate, a first isolation structure, a second isolation structure, a gate structure, a first source and drain region, and a second source and drain region is provided. The first isolation structure and the second isolation structure are disposed in the substrate. The gate structure is disposed on the substrate, at least a portion of the first isolation structure, and at least a portion of the second isolation structure. The first source and drain region and the second source and drain region are located in the substrate on two sides of the first isolation structure and the second isolation structure. The depth of the first isolation structure is greater than the depth of the second isolation structure.

Abstract: A high voltage transistor structure including a substrate, a first drift region, a second drift region, a first cap layer, a second cap layer, a gate structure, a first source and drain region, and a second source and drain region is provided. The first and second drift regions are disposed in the substrate. The first and second cap layers are respectively disposed on the first and second drift regions. The gate structure is disposed on the substrate and located over at least a portion of the first drift region and at least a portion of the second drift region. The first and second source and drain regions are respectively disposed in the first and second drift regions and located on two sides of the gate structure. The size of the first drift region and the size of the second drift region are asymmetric.

Abstract: The present invention discloses a use of mitochondria to promote wound repair and/or healing. Specifically, when a certain amount of mitochondria or a composition containing a certain amount of mitochondria is administered to a wound, the effect of promoting wound repair or accelerating wound healing can be effectively achieved.

Abstract: The embodiments of the present disclosure provide a cell culture composition and a use thereof, and the cell culture composition includes a culture medium and mitochondria. The cell culture composition including mitochondria can promote cell growth and improve the function of the damaged or aged stem cells, thereby improving overall cell growth.

Abstract: The embodiments of the present disclosure provide a composition including mitochondria. By providing the mitochondria to cartilage, the composition can improve the mitochondrial function of the chondrocytes in the cartilage so as to increase the repair ability of the chondrocytes and repair the cartilage damage caused by aging of the chondrocytes, thereby achieving the purpose of treating osteoarthritis.

Abstract: The embodiments of the present disclosure provide a manufacturing method of mitochondria-rich plasma. The mitochondria-rich plasma can increase the cell viability of damaged cells, decrease the cellular senescence level, repair the oxidative damage of cells, and relieve the inflammation of hair follicles so as to achieve the purpose of promoting hair regrowth.

Abstract: A method for fabricating of semiconductor device is provided, including providing a substrate. A first trench isolation and a second trench isolation are formed in the substrate. A portion of the substrate is etched to have a height between a top and a bottom of the first and second trench isolations. A germanium (Ge) doped layer region is formed in the portion of the substrate. A fluorine (F) doped layer region is formed in the portion of the substrate, lower than and overlapping with the germanium doped layer region. An oxidation process is performed on the portion of the substrate to form a gate oxide layer between the first and second trench isolations.

Abstract: A semiconductor device includes a semiconductor substrate, a recess, a first gate oxide layer, and a gate structure. The semiconductor substrate includes a first region and a second region adjacent to the first region. The recess is disposed in the first region of the semiconductor substrate, and an edge of the recess is located at an interface between the first region and the second region. At least a part of the first gate oxide layer is disposed in the recess. The first gate oxide layer includes a hump portion disposed adjacent to the edge of the recess, and a height of the hump portion is less than a depth of the recess. The gate structure is disposed on the first region and the second region of the semiconductor substrate, and the gate structure overlaps the hump portion of the first gate oxide layer in a vertical direction.

Abstract: The present disclosure provides an adapter assembly. Portion of the main body of the plug adapter is penetrated through the opening and exposed to the exterior of the accommodation space. Each protrusion is penetrated through the concave and exposed to the exterior of the accommodation space. Each protrusion exposed to the exterior of the accommodation space is connected with the position-limiting portion through the rotation of the plug adapter. Each fastening element is plugged into the first hole and the second hole. The plug adapter is fastened to the casing through the fastening element and the connection between the protrusion and the position-limiting portion. The adapter assembly includes two impact bearing points. One is formed by the fastening element, and the other is formed by the connection between the protrusion and the position-limiting portion. The stability and the waterproof capability of the adapter assembly are enhanced.

Abstract: A method for fabricating a high-voltage (HV) transistor is provided. The method includes providing a substrate, having a first isolation structure and a second isolation structure in the substrate and a recess in the substrate between the first and second isolation structures. Further, a hydrogen annealing process is performed over the recess. A sacrificial dielectric layer is formed on the recess. The sacrificial dielectric layer is removed, wherein a portion of the first and second isolation structures is also removed. A gate oxide layer is formed in the recess between the first and second isolation structures after the hydrogen annealing process.

Abstract: The present disclosure provides an adapter assembly. Portion of the main body of the plug adapter is penetrated through the opening and exposed to the exterior of the accommodation space. Each protrusion is penetrated through the concave and exposed to the exterior of the accommodation space. Each protrusion exposed to the exterior of the accommodation space is connected with the position-limiting portion through the rotation of the plug adapter. Each fastening element is plugged into the first hole and the second hole. The plug adapter is fastened to the casing through the fastening element and the connection between the protrusion and the position-limiting portion. The adapter assembly includes two impact bearing points. One is formed by the fastening element, and the other is formed by the connection between the protrusion and the position-limiting portion. The stability and the waterproof capability of the adapter assembly are enhanced.

Abstract: A semiconductor device includes a fin-shaped structure on a substrate, a single diffusion break (SDB) structure dividing the fin-shaped structure into a first portion and a second portion as the SDB structure includes a bottom portion in the fin-shaped structure and a top portion on the bottom portion, a spacer around the top portion, a first epitaxial layer adjacent to one side of the top portion, and a second epitaxial layer adjacent to another side of the top portion.