Patents by Inventor Chih Lai
Chih Lai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12288820Abstract: A transistor includes an insulating layer, a source region, a drain region, a channel layer, a ferroelectric layer, and a gate electrode. The source region and the drain region are respectively disposed on and in physical contact with two opposite sidewalls of the insulating layer. A thickness of the source region, a thickness of the drain region, and a thickness of the insulating layer are substantially the same. The channel layer is disposed on the insulating layer, the source region, and the drain region. The ferroelectric layer is disposed over the channel layer. The gate electrode is disposed on the ferroelectric layer.Type: GrantFiled: November 15, 2023Date of Patent: April 29, 2025Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hung-Chang Sun, Sheng-Chih Lai, Yu-Wei Jiang, Kuo-Chang Chiang, TsuChing Yang, Feng-Cheng Yang, Chung-Te Lin
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Publication number: 20250133774Abstract: A transistor including a channel layer including an oxide semiconductor material and methods of making the same. The transistor includes a channel layer having a first oxide semiconductor layer having a first oxygen concentration, a second oxide semiconductor layer having a second oxygen concentration and a third oxide semiconductor layer having a third oxygen concentration. The second oxide semiconductor layer is located between the first semiconductor oxide layer and the third oxide semiconductor layer. The second oxygen concentration is lower than the first oxygen concentration and the third oxygen concentration.Type: ApplicationFiled: December 27, 2024Publication date: April 24, 2025Inventors: Kuo-Chang Chiang, Hung-Chang Sun, Sheng-Chih Lai, TsuChing Yang, Yu-Wei Jiang, Feng-Cheng Yang, Neil Quinn Murray
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Publication number: 20250120091Abstract: A memory cell includes a thin film transistor over a semiconductor substrate, the thin film transistor including: a memory film contacting a word line; and an oxide semiconductor (OS) layer contacting a source line and a bit line, wherein the memory film is disposed between the OS layer and the word line, wherein the source line and the bit line each comprise a first conductive material touching the OS layer, and wherein the first conductive material has a work function less than 4.6. The memory cell further includes a dielectric material separating the source line and the bit line.Type: ApplicationFiled: December 18, 2024Publication date: April 10, 2025Inventors: Kuo-Chang Chiang, Hung-Chang Sun, Sheng-Chih Lai, TsuChing Yang, Yu-Wei Jiang
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Patent number: 12272750Abstract: A memory cell includes a ferroelectric (FE) material contacting a word line; and an oxide semiconductor (OS) layer contacting a source line and a bit line, wherein the FE material is disposed between the OS layer and the word line. The OS layer comprises: a first region adjacent the FE material, the first region having a first concentration of a semiconductor element; a second region adjacent the source line, the second region having a second concentration of the semiconductor element; and a third region between the first region and the second region, the third region having a third concentration of the semiconductor element, the third concentration is greater than the second concentration and less than the first concentration.Type: GrantFiled: June 7, 2023Date of Patent: April 8, 2025Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Kuo-Chang Chiang, Hung-Chang Sun, Sheng-Chih Lai, TsuChing Yang, Yu-Wei Jiang
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Patent number: 12274087Abstract: A field effect transistor includes a substrate having a transistor forming region thereon; an insulating layer on the substrate; a first graphene layer on the insulating layer within the transistor forming region; an etch stop layer on the first graphene layer within the transistor forming region; a first inter-layer dielectric layer on the etch stop layer; a gate trench recessed into the first inter-layer dielectric layer and the etch stop layer within the transistor forming region; a second graphene layer on interior surface of the gate trench; a gate dielectric layer on the second graphene layer and on the first inter-layer dielectric layer; and a gate electrode on the gate dielectric layer within the gate trench.Type: GrantFiled: November 21, 2022Date of Patent: April 8, 2025Assignee: UNITED MICROELECTRONICS CORP.Inventors: Kuo-Chih Lai, Shih-Min Chou, Nien-Ting Ho, Wei-Ming Hsiao, Li-Han Chen, Szu-Yao Yu, Chung-Yi Chiu
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Patent number: 12266465Abstract: A manufacturing method of a transformer includes: winding a first winding wire around a bobbin, wherein two ends of the first winding wire are connected to a first and a second pin of the bobbin respectively; winding a second winding wire around the bobbin, wherein two ends of the second winding wire are connected to a third and a fourth pin of the bobbin respectively; and winding a third and a fourth winding wire in parallel around the bobbin, wherein two ends of the third winding wire are connected to the second and a fifth pin of the bobbin respectively, and two ends of the fourth winding wire are connected to the fifth and a sixth pin respectively. The first, the third and the fourth winding wires form a primary coil, and the second winding wire is a secondary coil.Type: GrantFiled: November 29, 2021Date of Patent: April 1, 2025Assignee: Champion Microelectronic Corp.Inventors: Pao Wei Lin, Wei Liang Lin, Pei Wang, Jia Yao Lin, Yu Ting Chen, Chien-Chih Lai
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Patent number: 12268005Abstract: A semiconductor structure includes a plurality of memory cells stacked up along a first direction. Each of the memory cells include a memory stack, connecting lines, and insulating layers. The memory stack includes a first dielectric layer, a channel layer disposed on the first dielectric layer, a charge trapping layer disposed on the channel layer, a second dielectric layer disposed on the charge trapping layer, and a gate layer disposed in between the channel layer and the second dielectric layer. The connecting lines are extending along the first direction and covering side surfaces of the memory stack. The insulating layers are extending along the first direction, wherein the insulating layers are located aside the connecting lines and covering the side surfaces of the memory stack.Type: GrantFiled: November 23, 2023Date of Patent: April 1, 2025Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Sheng-Chih Lai, Chung-Te Lin
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Patent number: 12266408Abstract: In some embodiments, the present disclosure relates to an integrated chip (IC) memory structure. The IC memory structure includes a first conductor over a substrate and a second conductor over the first conductor. The first conductor is vertically separated from the second conductor by an isolation structure. A first channel structure is arranged on a sidewall of the isolation structure. The first channel structure is vertically between the first conductor and the second conductor. A vertical gate electrode is disposed along sidewalls of the first conductor, the second conductor, and the first channel structure. The sidewall of the first channel structure faces away from the isolation structure.Type: GrantFiled: July 24, 2023Date of Patent: April 1, 2025Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Sheng-Chih Lai, Chung-Te Lin
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Publication number: 20250106974Abstract: A target droplet source for an extreme ultraviolet (EUV) source includes a droplet generator configured to generate target droplets of a given material. The droplet generator includes a nozzle configured to supply the target droplets in a space enclosed by a chamber. The target droplet source further includes a sleeve disposed in the chamber distal to the nozzle. The sleeve is configured to provide a path for the target droplets in the chamber.Type: ApplicationFiled: December 6, 2024Publication date: March 27, 2025Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei-Chih LAI, Han-Lung CHANG, Chi YANG, Shang-Chieh CHIEN, Bo-Tsun LIU, Li-Jui CHEN, Po-Chung CHENG
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Publication number: 20250087550Abstract: A semiconductor package includes a circuit substrate, a die, a frame structure, and a heat sink lid. The die is disposed on the circuit substrate and electrically connected with the circuit substrate. The die includes two first dies disposed side by side and separate from each other with a gap between two facing sidewalls of the two first dies. The frame structure is disposed on the circuit substrate and surrounding the die. The heat sink lid is disposed on the die and the frame structure. The head sink lid has a slit that penetrates through the heat sink lid in a thickness direction and exposes the gap between the two facing sidewalls of the two first dies.Type: ApplicationFiled: November 22, 2024Publication date: March 13, 2025Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei-Chih Lai, Chien-Chia Chiu, Chen-Hua Yu, Der-Chyang Yeh, Cheng-Hsien Hsieh, Li-Han Hsu, Tsung-Shu Lin, Wei-Cheng Wu, Yu-Chen Hsu
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Publication number: 20250081470Abstract: In a method of manufacturing a semiconductor device, a magnetic random access memory (MRAM) cell structure is formed. The MRAM cell structure includes a bottom electrode, a magnetic tunnel junction (MTJ) stack and a top electrode. A first insulating cover layer is formed over the MRAM cell structure. A second insulating cover layer is formed over the first insulating cover layer. An interlayer dielectric (ILD) layer is formed. A contact opening in the ILD layer is formed, thereby exposing the second insulating cover layer. A part of the second insulating cover layer and a part of the first insulating cover layer are removed, thereby exposing the top electrode. A conductive layer is formed in the opening contacting the top electrode.Type: ApplicationFiled: November 19, 2024Publication date: March 6, 2025Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hui-Hsien WEI, Chung-Te LIN, Han-Ting TSAI, Tai-Yen PENG, Yu-Teng DAI, Chien-Min LEE, Sheng-Chih LAI, Wei-Chih WEN
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Publication number: 20250069648Abstract: Disclosed herein are related to a memory device. In one aspect, the memory device includes a memory array including a set of memory cells. In one aspect, each of the set of memory cells includes a corresponding transistor and a corresponding capacitor connected in series between a bit line and a select line. In one aspect, the memory device includes a first transistor including a source/drain electrode coupled to a controller and another source/drain electrode coupled to the bit line. In one aspect, the memory device includes a second transistor including a gate electrode coupled to the bit line. In one aspect, the second transistor is configured to conduct current corresponding to data stored by a memory cell of the set of memory cells.Type: ApplicationFiled: November 14, 2024Publication date: February 27, 2025Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chen-Jun Wu, Yun-Feng Kao, Sheng-Chih Lai, Katherine H. Chiang, Chung-Te Lin
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Patent number: 12218250Abstract: A transistor including a channel layer including an oxide semiconductor material and methods of making the same. The transistor includes a channel layer having a first oxide semiconductor layer having a first oxygen concentration, a second oxide semiconductor layer having a second oxygen concentration and a third oxide semiconductor layer having a third oxygen concentration. The second oxide semiconductor layer is located between the first semiconductor oxide layer and the third oxide semiconductor layer. The second oxygen concentration is lower than the first oxygen concentration and the third oxygen concentration.Type: GrantFiled: June 14, 2023Date of Patent: February 4, 2025Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Kuo-Chang Chiang, Hung-Chang Sun, Sheng-Chih Lai, TsuChing Yang, Yu-Wei Jiang, Feng-Cheng Yang, Neil Quinn Murray
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Patent number: 12219777Abstract: A memory cell includes a thin film transistor over a semiconductor substrate, the thin film transistor including: a memory film contacting a word line; and an oxide semiconductor (OS) layer contacting a source line and a bit line, wherein the memory film is disposed between the OS layer and the word line, wherein the source line and the bit line each comprise a first conductive material touching the OS layer, and wherein the first conductive material has a work function less than 4.6. The memory cell further includes a dielectric material separating the source line and the bit line.Type: GrantFiled: June 26, 2023Date of Patent: February 4, 2025Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTDInventors: Kuo-Chang Chiang, Hung-Chang Sun, Sheng-Chih Lai, TsuChing Yang, Yu-Wei Jiang
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Patent number: 12219880Abstract: A memory device includes a bottom electrode contact, a magnetic tunnel junction pattern, a protection insulating layer, a first capping layer, an interlayer insulating layer, and a second capping layer. The magnetic tunnel junction pattern is over the bottom electrode contact. The protection insulating layer surrounds the magnetic tunnel junction pattern. The first capping layer surrounds the protection insulating layer. The interlayer insulating layer surrounds the first capping layer. The second capping layer is over the first capping layer and the interlayer insulating layer.Type: GrantFiled: March 4, 2024Date of Patent: February 4, 2025Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tai-Yen Peng, Hui-Hsien Wei, Wei-Chih Wen, Pin-Ren Dai, Chien-Min Lee, Sheng-Chih Lai, Han-Ting Tsai, Chung-Te Lin
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Patent number: 12211888Abstract: A method for forming a thin film resistor with improved thermal stability is disclosed. A substrate having thereon a first dielectric layer is provided. A resistive material layer is deposited on the first dielectric layer. A capping layer is deposited on the resistive material layer. The resistive material layer is then subjected to a thermal treatment at a pre-selected temperature higher than 350 degrees Celsius in a hydrogen or deuterium atmosphere. The capping layer and the resistive material layer are patterned to form a thin film resistor on the first dielectric layer.Type: GrantFiled: January 27, 2021Date of Patent: January 28, 2025Assignee: UNITED MICROELECTRONICS CORP.Inventors: Kuo-Chih Lai, Chi-Mao Hsu, Shih-Min Chou, Nien-Ting Ho, Wei-Ming Hsiao, Li-Han Chen, Szu-Yao Yu, Hsin-Fu Huang
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Publication number: 20250014627Abstract: A thyristor memory cell includes a semiconductor cathode, a first un-doped semiconductor feature connected to the semiconductor cathode, a second un-doped semiconductor feature connected to the first un-doped semiconductor feature, a semiconductor anode connected to the second un-doped semiconductor feature, and a gate feature disposed on the first un-doped semiconductor feature or the second un-doped semiconductor feature. Among the semiconductor cathode, the first un-doped semiconductor feature, the second un-doped semiconductor feature and the semiconductor anode, the semiconductor anode has the highest bottom edge of conduction band, followed by the first un-doped semiconductor feature, the second un-doped semiconductor feature and the semiconductor cathode in the given order; and the semiconductor anode has the highest top edge of the valence band, followed by the first un-doped semiconductor feature, the second un-doped semiconductor feature and the semiconductor cathode in the given order.Type: ApplicationFiled: July 7, 2023Publication date: January 9, 2025Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Sheng-Chih LAI, Chen-Jun WU
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Patent number: 12193136Abstract: A target droplet source for an extreme ultraviolet (EUV) source includes a droplet generator configured to generate target droplets of a given material. The droplet generator includes a nozzle configured to supply the target droplets in a space enclosed by a chamber. The target droplet source further includes a sleeve disposed in the chamber distal to the nozzle. The sleeve is configured to provide a path for the target droplets in the chamber.Type: GrantFiled: July 19, 2023Date of Patent: January 7, 2025Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Wei-Chih Lai, Han-Lung Chang, Chi Yang, Shang-Chieh Chien, Bo-Tsun Liu, Li-Jui Chen, Po-Chung Cheng
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Patent number: 12191224Abstract: A semiconductor package includes a circuit substrate, a die, a frame structure, and a heat sink lid. The die is disposed on the circuit substrate and electrically connected with the circuit substrate. The die includes two first dies disposed side by side and separate from each other with a gap between two facing sidewalls of the two first dies. The frame structure is disposed on the circuit substrate and surrounding the die. The heat sink lid is disposed on the die and the frame structure. The head sink lid has a slit that penetrates through the heat sink lid in a thickness direction and exposes the gap between the two facing sidewalls of the two first dies.Type: GrantFiled: November 6, 2022Date of Patent: January 7, 2025Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wei-Chih Lai, Chien-Chia Chiu, Chen-Hua Yu, Der-Chyang Yeh, Cheng-Hsien Hsieh, Li-Han Hsu, Tsung-Shu Lin, Wei-Cheng Wu, Yu-Chen Hsu
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Patent number: 12185531Abstract: In some embodiments, the present disclosure relates to a memory device that includes gate electrode layers arranged over a substrate. A first memory cell is arranged over the substrate and includes first and second source/drain conductive lines that extend through the gate electrode layers. A barrier structure is arranged between the first and second source/drain conductive lines. A channel layer is arranged on outermost sidewalls of the first and second source/drain conductive lines. A first dielectric layer is arranged between the barrier structure and the channel layer. A memory layer is arranged on sidewalls of the channel layer. The first dielectric layer has a first maximum width measured between outermost sidewalls of the first dielectric layer. The first source/drain conductive line has a second maximum width measured between the outermost sidewalls of the first source/drain conductive line. The second width is greater than the first width.Type: GrantFiled: August 26, 2021Date of Patent: December 31, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Wei Jiang, Sheng-Chih Lai, Feng-Cheng Yang, Chung-Te Lin