Patents by Inventor Chih-Lin Wang
Chih-Lin Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11362089Abstract: Semiconductor structures and method for forming the same are provided. The method for manufacturing the semiconductor structure includes forming a first gate dielectric layer over a substrate and forming a first capping layer over the first gate dielectric layer. The method for manufacturing the semiconductor structure includes oxidizing the first capping layer to form a first capping oxide layer and forming a first work function metal layer over the first capping oxide layer. The method for manufacturing the semiconductor structure includes forming a first gate electrode layer over the first work function metal layer.Type: GrantFiled: December 30, 2019Date of Patent: June 14, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Wei Lin, Chih-Lin Wang, Kang-Min Kuo, Cheng-Wei Lian
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Publication number: 20220077384Abstract: A magnetoresistive memory device includes a memory stack, a spin-orbit-torque (SOT) layer, and a free layer. The memory stack includes a pinned layer, a spacer layer over the pinned layer, a reference layer over the spacer layer, and a tunnel barrier layer over the reference layer. The SOT layer has a top surface substantially coplanar with a top surface of the tunnel barrier layer of the memory stack. The free layer interconnects the SOT layer and the tunnel barrier layer.Type: ApplicationFiled: November 14, 2021Publication date: March 10, 2022Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITYInventors: Ya-Jui TSOU, Zong-You LUO, Chee-Wee LIU, Shao-Yu LIN, Liang-Chor CHUNG, Chih-Lin WANG
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Patent number: 11251088Abstract: A semiconductor device includes an active area having source and drain regions and a channel region between the source and drain regions, an isolation structure surrounding the active area, and a gate structure over the channel region of the active area and over the isolation structure, wherein the isolation structure has a first portion under the gate structure and a second portion free from coverage by the gate structure, and a top of the first portion of the isolation structure is lower than a top of the second portion of the isolation structure.Type: GrantFiled: June 15, 2020Date of Patent: February 15, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Long-Jie Hong, Chih-Lin Wang, Kang-Min Kuo
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Publication number: 20210384294Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a semiconductor substrate and a gate stack over the semiconductor substrate. The gate stack includes a gate dielectric layer and a work function layer. The gate dielectric layer is between the semiconductor substrate and the work function layer. The semiconductor device structure also includes a halogen source layer. The gate dielectric layer is between the semiconductor substrate and the halogen source layer.Type: ApplicationFiled: August 23, 2021Publication date: December 9, 2021Inventors: Chih-Wei Lin, Chih-Lin Wang, Kang-Min Kuo
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Patent number: 11177430Abstract: A magnetoresistive memory device includes a memory stack, a spin-orbit-torque (SOT) layer, and a free layer. The memory stack includes a pinned layer and a reference layer over the pinned layer. The SOT layer is spaced apart from the memory stack. The free layer is over the memory stack and the SOT layer.Type: GrantFiled: June 17, 2019Date of Patent: November 16, 2021Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITYInventors: Ya-Jui Tsou, Zong-You Luo, Chee-Wee Liu, Shao-Yu Lin, Liang-Chor Chung, Chih-Lin Wang
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Publication number: 20210335662Abstract: A device includes an isolation structure, a source/drain epi-layer, a contact, a first dielectric layer, and a second dielectric layer. The isolation structure is embedded in a substrate. The source/drain epi-layer is embedded in the substrate and is in contact with the isolation structure. The contact is over the source/drain epi-layer. The first dielectric layer wraps the contact. The second dielectric layer is between the contact and the first dielectric layer. The first and second dielectric layers include different materials, and a portion of the source/drain epi-layer is directly between a bottom portion of the second dielectric layer and a top portion of the isolation structure.Type: ApplicationFiled: July 1, 2021Publication date: October 28, 2021Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Wen-Jia HSIEH, Long-Jie HONG, Chih-Lin WANG, Kang-Min KUO
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Patent number: 11101344Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a semiconductor substrate and a gate stack over the semiconductor substrate. The gate stack includes a gate dielectric layer and a work function layer. The gate dielectric layer is between the semiconductor substrate and the work function layer. The semiconductor device structure also includes a halogen source layer. The gate dielectric layer is between the semiconductor substrate and the halogen source layer.Type: GrantFiled: October 7, 2019Date of Patent: August 24, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chih-Wei Lin, Chih-Lin Wang, Kang-Min Kuo
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Publication number: 20210225765Abstract: A device comprises a first dielectric layer, a first conductor, a carbon-containing etch stop layer, a second dielectric layer, and a second conductor. The first conductor has a lower portion in the first dielectric layer. The carbon-containing etch stop layer wraps an upper portion of the first conductor. The second dielectric layer is over the carbon-containing etch stop layer. An interface formed by the second dielectric layer and the carbon-containing etch stop layer is higher over the first conductor than over the first dielectric layer. The second conductor is in the second dielectric layer.Type: ApplicationFiled: April 9, 2021Publication date: July 22, 2021Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Zhi-Sheng ZHENG, Chih-Lin WANG
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Patent number: 11070777Abstract: A projection apparatus and its operation method are provided. The projection apparatus includes a light-emitting device, a driving circuit coupled to the light-emitting device, and a control circuit receiving at least one video frame and analyzing color content of the at least one video frame. According to at least one control signal, the driving circuit drives the light-emitting device to generate a projected beam. The control circuit selects a highlight mode or a normal mode as a selected mode according to the color content and correspondingly sets at least one control signal to the driving circuit according to the selected mode. A brightness of the projected beam of the light-emitting device in the highlight mode is greater than that in the normal mode.Type: GrantFiled: November 20, 2019Date of Patent: July 20, 2021Assignee: Coretronic CorporationInventors: Wei-Chih Su, Sheng-Yu Chiu, Po-Yen Wu, Jung-Chi Chen, Chih-Lin Wang
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Patent number: 11063039Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a first source region, a second source region, a first drain region, and a second drain region. The semiconductor device structure includes a first gate structure over the substrate and between the first source region and the first drain region. The semiconductor device structure includes a second gate structure over the substrate and between the second source region and the second drain region. A first thickness of the first gate structure is greater than a second thickness of the second gate structure. A first gate width of the first gate structure is less than a second gate width of the second gate structure.Type: GrantFiled: July 30, 2018Date of Patent: July 13, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Cong-Min Fang, Chih-Lin Wang, Kang-Min Kuo
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Patent number: 11056384Abstract: The semiconductor device includes a substrate, an epi-layer, a first etch stop layer, an interlayer dielectric (ILD) layer, a second etch stop layer, a protective layer, a liner, a silicide cap and a contact plug. The substrate has a first portion and a second portion. The epi-layer is disposed in the first portion. The first etch stop layer is disposed on the second portion. The ILD layer is disposed on the first etch stop layer. The second etch stop layer is disposed on the ILD layer, in which the first etch stop layer, the ILD layer and the second etch stop layer form a sidewall surrounding the first portion. The protective layer is disposed on the sidewall. The liner is disposed on the protective layer. The silicide cap is disposed on the epi-layer. The contact plug is disposed on the silicide cap and surrounded by the liner.Type: GrantFiled: November 8, 2019Date of Patent: July 6, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Wen-Jia Hsieh, Long-Jie Hong, Chih-Lin Wang, Kang-Min Kuo
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Publication number: 20210193911Abstract: A memory device includes a substrate, an etch stop layer, a protective layer, and a resistance switching element. The substrate has a memory region and a logic region, and includes a metallization pattern therein. The etch stop layer is over the substrate, and has a first portion over the memory region and a second portion over the logic region. The protective layer covers the first portion of the etch stop layer. The protective layer does not cover the second portion of the etch stop layer. The resistance switching element is over the memory region, and the resistance switching element is electrically connected to the metallization pattern through the etch stop layer and the protective layer.Type: ApplicationFiled: December 19, 2019Publication date: June 24, 2021Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Hsin-Hsiang TSENG, Chih-Lin WANG, Yi-Huang WU
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Patent number: 10978389Abstract: A device includes a first dielectric layer, a first conductor, a second dielectric layer, a second conductor, and an etch stop layer. The first conductor is in the first dielectric layer. The second dielectric layer is over the first dielectric layer. The second conductor is in the second dielectric layer and electrically connected to the first conductor. The second conductor has a first portion over a top surface of the first conductor and a second portion extending downwards from the first portion and around the first conductor. The etch stop layer has a first portion between the second portion of the second conductor and the first dielectric layer and a second portion between the first dielectric layer and the second dielectric layer. A top surface of the first portion of the etch stop layer is lower than a top surface of the second portion of the etch stop layer.Type: GrantFiled: December 9, 2019Date of Patent: April 13, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Zhi-Sheng Zheng, Chih-Lin Wang
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Publication number: 20210082482Abstract: A magnetoresistive memory device includes a plurality of bottom conductive lines, a plurality of top conductive lines, a first memory cell, and a second memory cell. The top conductive lines are over the bottom conductive lines. The first memory cell is between the bottom conductive lines and the top conductive lines and includes a first magnetic tunnel junction (MTJ) stack. The second memory cell is adjacent the first memory cell and between the bottom conductive lines and the top conductive lines. The second memory cell includes a second MTJ stack, and a top surface of the second MTJ stack is higher than a top surface of the first MTJ stack.Type: ApplicationFiled: September 16, 2019Publication date: March 18, 2021Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITYInventors: Zong-You LUO, Ya-Jui TSOU, Chee-Wee LIU, Shao-Yu LIN, Liang-Chor CHUNG, Chih-Lin WANG
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Publication number: 20200395530Abstract: A magnetoresistive memory device includes a memory stack, a spin-orbit-torque (SOT) layer, and a free layer. The memory stack includes a pinned layer and a reference layer over the pinned layer. The SOT layer is spaced apart from the memory stack. The free layer is over the memory stack and the SOT layer.Type: ApplicationFiled: June 17, 2019Publication date: December 17, 2020Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., NATIONAL TAIWAN UNIVERSITYInventors: Ya-Jui TSOU, Zong-You LUO, Chee-Wee LIU, Shao-Yu LIN, Liang-Chor CHUNG, Chih-Lin WANG
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Patent number: 10868133Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a metal gate electrode structure and an insulating layer over the semiconductor substrate. The insulating layer surrounds the metal gate electrode structure. The method includes nitrifying a first top portion of the metal gate electrode structure to form a metal nitride layer over the metal gate electrode structure.Type: GrantFiled: October 28, 2019Date of Patent: December 15, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chi-Ruei Yeh, Chih-Lin Wang, Kang-Min Kuo
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Publication number: 20200312719Abstract: A semiconductor device includes an active area having source and drain regions and a channel region between the source and drain regions, an isolation structure surrounding the active area, and a gate structure over the channel region of the active area and over the isolation structure, wherein the isolation structure has a first portion under the gate structure and a second portion free from coverage by the gate structure, and a top of the first portion of the isolation structure is lower than a top of the second portion of the isolation structure.Type: ApplicationFiled: June 15, 2020Publication date: October 1, 2020Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Long-Jie HONG, Chih-Lin WANG, Kang-Min KUO
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Patent number: 10685885Abstract: A semiconductor device includes a substrate, an isolation structure, and a gate structure. The substrate has an active area. The isolation structure surrounds the active area of the substrate. The gate structure is across the active area of the substrate. The isolation structure has a first portion under the gate structure and a second portion adjacent to the gate structure. A top surface of the first portion of the isolation structure is lower than a top surface of the second portion of the isolation structure.Type: GrantFiled: April 2, 2018Date of Patent: June 16, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Long-Jie Hong, Chih-Lin Wang, Kang-Min Kuo
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Publication number: 20200169708Abstract: A projection apparatus and its operation method are provided. The projection apparatus includes a light-emitting device, a driving circuit coupled to the light-emitting device, and a control circuit receiving at least one video frame and analyzing color content of the at least one video frame. According to at least one control signal, the driving circuit drives the light-emitting device to generate a projected beam. The control circuit selects a highlight mode or a normal mode as a selected mode according to the color content and correspondingly sets at least one control signal to the driving circuit according to the selected mode. A brightness of the projected beam of the light-emitting device in the highlight mode is greater than that in the normal mode.Type: ApplicationFiled: November 20, 2019Publication date: May 28, 2020Applicant: Coretronic CorporationInventors: Wei-Chih Su, Sheng-Yu Chiu, Po-Yen Wu, Jung-Chi Chen, Chih-Lin Wang
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Publication number: 20200144261Abstract: Semiconductor structures and method for forming the same are provided. The method for manufacturing the semiconductor structure includes forming a first gate dielectric layer over a substrate and forming a first capping layer over the first gate dielectric layer. The method for manufacturing the semiconductor structure includes oxidizing the first capping layer to form a first capping oxide layer and forming a first work function metal layer over the first capping oxide layer. The method for manufacturing the semiconductor structure includes forming a first gate electrode layer over the first work function metal layer.Type: ApplicationFiled: December 30, 2019Publication date: May 7, 2020Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Wei LIN, Chih-Lin WANG, Kang-Min KUO, Cheng-Wei LIAN