Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate, a conductive feature on the substrate, and an electrical connection structure on the conductive feature. The electrical connection includes a first grain made of a first metal material, and a first inhibition layer made of a second metal layer that is different than the first metal material. The first inhibition layer extends vertically along a first side of a grain boundary of the first grain and laterally along a bottom of the grain boundary of the first grain.

Abstract: A method of fabricating an integrated circuit includes placing a first set of conductive feature patterns on a first level, placing a second set of conductive feature patterns on a second level, placing a first set of via patterns between the second set of conductive feature patterns and the first set of conductive feature patterns, placing a third set of conductive feature patterns on a third level different from the first level and the second level, placing a second set of via patterns between the third set of conductive feature patterns and the second set of conductive feature patterns, and manufacturing the integrated circuit based on at least one of the above patterns of the integrated circuit.

Abstract: Processing chambers including at least one gas reservoir connected to and in fluid communication with the lid through a fast-switching valve and a gas reservoir line are described. Processing methods, for example, etching methods, using the processing chambers are also described.

Abstract: The present disclosure provides a semiconductor structure. The structure includes a semiconductor substrate, a gate stack over a first portion of a top surface of the semiconductor substrate; and a laminated dielectric layer over at least a portion of a top surface of the gate stack. The laminated dielectric layer includes at least a first sublayer and a second sublayer. The first sublayer is formed of a material having a dielectric constant lower than a dielectric constant of a material used to form the second sublayer and the material used to form the second sublayer has an etch selectivity higher than an etch selectivity of the material used to form the first sublayer.

Abstract: An apparatus (e.g., an access point (AP) or a non-AP station (STA)) detects a non-primary subband of an operating bandwidth comprising a primary subband and the non-primary subband to be idle. The apparatus controls a transmit power in performing transmission on at least the non-primary subband.

Abstract: A multi-phase coupled inductor includes a first iron core, a second iron core, and a plurality of coil windings. The first iron core includes a first body and a plurality of first core posts. The plurality of first core posts are connected to the first body. The second iron core is opposite to the first iron core. The second iron core and the first body are spaced apart from each other by a gap. The plurality of coil windings wrap around the plurality of first core posts, respectively. Each of the coil windings has at least two coils.

Abstract: This application relates to the field of lighting, and discloses an LED filament. The LED filament includes an LED chip unit, a light conversion layer, and an electrode. The light conversion layer covers the LED chip unit and part of the electrode, and a color of a light emitted by the LED filament after lighting is different from a color of the light conversion layer. This application has the characteristics of uniform light emission and good heat dissipation effect.

Abstract: Systems and methods of generating a security key for an integrated circuit device include generating a plurality of key bits with a physically unclonable function (PUF) device. The PUF can include a random number generator that can create random bits. The random bits may be stored in a nonvolatile memory. The number of random bits stored in the nonvolatile memory allows for a plurality of challenge and response interactions to obtain a plurality of security keys from the PUF.

Abstract: A Ziegler-Natta catalyzed ethylene/alpha-olefins copolymer is provided having sporadic long chain branches and reversed comonomer composition distribution or short chain branching distribution (SCBD) in the high molecular weight fractions. According to the invention, polyethylene film made with the inventive copolymer has a balance of improved physical, optical, mechanical properties as well as processability. In one aspect, the film includes a 1% secant modulus of greater than 25,000 psi, a film haze of less than 10, a film clarity of greater than 90, a dart impart resistance of greater than 500 g/mil, and a MD tear strength of greater than 500 g/mil.

Abstract: A method for forming a semiconductor structure is provided. The method for forming the semiconductor structure includes forming a fin structure over a substrate in a first direction, forming a first gate stack, a second gate stack and a third gate stack across the fin structure, removing the first gate stack to form a trench, depositing a cutting structure in the trench, and forming a first contact plug between the cutting structure and the second gate stack and a second contact plug between the second gate stack and the third gate stack. The fin structure is cut into two segments by the trench. A first dimension of the first contact plug in the first direction is greater than a second dimension of the second contact plug in the first direction.

Abstract: This disclosure provides systems, methods and apparatus, including computer programs encoded on computer storage media, for switching a secondary cell to a primary cell. A user equipment (UE) monitors a first radio condition of the UE for beams of a primary cell and a second radio condition for beams of one or more secondary cells configured for the UE in carrier aggregation. The UE transmits a request to configure a candidate beam of at least one candidate secondary cell as a new primary cell in response to the first radio condition not satisfying a first threshold and the second radio condition for the at least one candidate secondary cell satisfying a second threshold. A base station determines to reconfigure at least one secondary cell as the new primary cell. The base station and the UE perform a handover of the UE to the new primary cell.

Abstract: An access point (AP) and a station (STA) communicate with each other, with the AP indicating to the STA either or both of a preamble detection (PD) channel and a signaling (SIG) content channel and with the STA being initially monitoring a primary frequency segment of a plurality of frequency segments in an operating bandwidth of the AP. A downlink (DL) or triggered uplink (UL) communication is performed between the AP and the STA during a transmission opportunity (TXOP) such that: (i) during the TXOP, the STA monitors a preamble on the PD channel and decodes a SIG content on the SIG content channel; and (ii) after an end of the TXOP, the STA switches to the primary frequency segment.

Abstract: A contact stack of a semiconductor device includes a source/drain feature, a silicide layer wrapping around the source/drain feature, a seed metal layer in direct contact with the silicide layer, and a conductor in contact with the seed metal layer. The contact stack excludes a metal nitride layer in direct contact with the silicide layer.

Abstract: A memory array and an operation method of the memory array are provided. The memory array includes first and second ferroelectric memory devices formed along a gate electrode, a channel layer and a ferroelectric layer between the gate electrode and the channel layer. The ferroelectric memory devices include: a common source/drain electrode and two respective source/drain electrodes, separately in contact with a side of the channel layer opposite to the ferroelectric layer, wherein the common source/drain electrode is disposed between the respective source/drain electrodes; and first and second auxiliary gates, capacitively coupled to the channel layer, wherein the first auxiliary gate is located between the common source/drain electrode and one of the respective source/drain electrodes, and the second auxiliary gate is located between the common source/drain electrode and the other respective source/drain electrode.

Abstract: In an aspect of the disclosure, a method, a computer-readable medium, and an apparatus are provided. The apparatus may be an access point (AP) multi-link device (MLD). In certain configurations, the AP MLD establishes a primary link on a first channel and a non-primary link on a second channel. The AP MLD determines to perform a channel switch operation to switch a first link of the primary link and the non-primary link to operating on a different channel. The AP MLD transmits, on the primary link and prior to the switching of the first link, a first management frame including a first element indicating a target switching time for the switching of the first link. The AP MLD transmits, on the primary link after the switching of the first link, a second management frame indicating that an AP on the first link is in operation.

Abstract: Various techniques and schemes pertaining to primary link identification schemes in wireless communications are described. An access point (AP) multi-link device (MLD) establishes a plurality of links, the plurality of links comprising a primary link and a non-primary link that constitute a non-simultaneous-transmission-and-reception (NSTR) link pair. An AP affiliated with the AP transmits a beacon frame with an indication on whether or not the AP or a reported AP is affiliated with an NSTR AP MLD and is operating on the primary link of the NSTR link pair.

Abstract: Various techniques and schemes pertaining to extremely-high throughput (EHT) multi-link maximum channel switching in wireless communications are described. A station (STA) multi-link device (MLD) receives an indication from a reporting access point (AP) affiliated with an AP MLD on one link of multiple links. The STA MLD determines a channel switching time when a reported AP switches from operating in a current channel of the reported AP to operating in a new channel on one other link of the multiple links based on the indication.

Abstract: A fluorine-containing elastomer composition includes a curable fluorine-containing polymer comprising at least one fluorinated cure site monomer having a cure site; an group IIIB element-containing reinforcing additive in an amount of 8 to 15 weight parts with respect to 100 weight parts of the curable fluorine-containing polymer; and a curative configured for curing the at least one fluorinated cure site monomer.

Abstract: Embodiments of the present invention are drawn to methods and electronic devices capable of performing coordinate spatial reuse for wirelessly transmitting data on a channel in coordination with another wireless AP operating an overlapping BSS using the same wireless channel. The device can perform RSSI measurements and generate Per-RU RSSI reports including the RSSI measurements information for transmission to another wireless AP. The RSSI measurement can be performed by the device based on power levels detected when receiving TB PPDUs transmitted by wireless STAs responsive to trigger frames, for example. Based on the Per-RU RSSI report, a wireless AP can be configured to transmit data to an associated wireless STA without causing significant interference when another AP of the overlapping BSS is also transmitting, and can schedule frames for transmission from associated wireless STAs accordingly.

Abstract: A manufacturing method of fan stator structure includes the steps of providing a fan stator; providing a plurality of coil lead wire holders at an end of the fan stator; and winding lead wires on the fan stator to form coils, and setting and connecting a front end and a back end of each of the lead wires to the coil lead wire holders. The above method eliminates the drawbacks of the conventional fan stator coil winding operation, such as requiring manual twisting and trimming of the lead wire front ends and back ends and leaking of tin solder occurred during welding of the lead wires to a circuit board.