Abstract: The present invention discloses a laser dicing apparatus for a gallium arsenide wafer and a method thereof, wherein firstly, a gallium arsenide wafer is stuck onto a holding film; next, the gallium arsenide wafer together with the holding film is disposed on a working table; the gallium arsenide wafer has multiple chips or dice with a scribed line drawn between every two chips; a control device and an object lens are used to position the working table and a laser, and two video devices are used to observe whether the laser has been precisely aimed at one of the scribed lines; after parameters have been input into the control device, the laser is used to cut the gallium arsenide wafer, and the gallium arsenide wafer is then separated into multiple discrete chips or dice. The present invention can precisely cut gallium arsenide wafers, reduce the cost and accelerate the fabrication process.

Abstract: The present invention discloses a laser dicing apparatus for a gallium arsenide wafer and a method thereof, wherein firstly, a gallium arsenide wafer is stuck onto a holding film; next, the gallium arsenide wafer together with the holding film is disposed on a working table; the gallium arsenide wafer has multiple chips or dice with a scribed line drawn between every two chips; a control device and an object lens are used to position the working table and a laser, and two video devices are used to observe whether the laser has been precisely aimed at one of the scribed lines; after parameters have been input into the control device, the laser is used to cut the gallium arsenide wafer, and the gallium arsenide wafer is then separated into multiple discrete chips or dice. The present invention can precisely cut gallium arsenide wafers, reduce the cost and accelerate the fabrication process.

Abstract: The present invention discloses a high-power-laser chip-fabrication apparatus and a method thereof, wherein a substrate is fixed on a working table; a light-guide device is used to direct a high power laser to a scribed line on the substrate; a control device is used to position the working table and the high power laser so that the high power laser can be precisely aimed at the scribed line to be cut; a video device is used to observe whether the high power has been aimed at the scribed line; an object lens is used to adjust the focal length by which the high power laser is to be aimed at one of the scribed lines; the length of the scribed line to be cut and the spacing between two scribed lines are input; and then, the cutting is performed. The present invention can cut the substrate quickly and precisely into multiple discrete chips and accelerate the fabrication process.

Abstract: A laser cutting system for cutting a wafer includes a working table capable of holding a wafer with a vacuum device. The wafer is monitored on a first side by an electronic micro camera for positioning the wafer to a cutting location. A laser device mounted above the working table generates a laser beam for cutting a second side of the wafer when the electronic micro camera is monitoring and guiding the wafer carried by the working table along an accurate route.

Abstract: A method for polishing diamond wafers. At least a diamond wafer is mounted onto a ceramic plate with wax disposed therebetween and is pressed onto the ceramic plate. The ceramic plate is fixed on a first transmission device of a polishing machine by a vacuum. The ceramic plate is driven by the first transmission device to rotate and move towards a metal disc fixed on a second transmission device driven to rotate unmoved such that the diamond wafer on the ceramic plate is being polished by the metal disc. The method for polishing diamond wafers of the present invention uses the metal disc so as to reduce cost, time and improve polishing efficiency.

Abstract: A combined chip/heat-dissipating metal plate includes a chip and a heat-dissipating metal plate bonded to a side of the chip, wherein the heat-dissipating metal plate is in a stretched state. The heat-dissipating metal plate is stretched before bonding the chip. Preferably, the stretched heat-dissipating metal plate has a thickness smaller than that of the heat-dissipating metal plate before stretching by not more than 20%. The chip has good compression strength in the radial direction and the heat-dissipating metal plate has higher tensile strength after being stretched and taking shape, providing a more stable structure and avoiding damage to the chip due to radially outward tension. The combined chip/heat-dissipating metal plate thus obtained is more stable and thus benefits the subsequent cutting by a laser cutting apparatus.

Abstract: A keypad device including a parallel/serial conversion device, a keypad module, and a controller coupled to the parallel/serial conversion device and the keypad module. The keys in the keypad module are arranged in parallel. After the key is triggered, an interrupt signal will be fed to the controller. On receiving the interrupt signal, the controller will feed a drive voltage to the keypad module generating a parallel signal therein. After causing the parallel/serial conversion device to read and store the parallel signal, the controller will be able to read the parallel signal serially by using the clock signals. The status of the keypad module can thereby be obtained.

Abstract: A method for making a top plate for a paper pallet includes folding a sheet unit in two along a widthwise direction and folding the sheet unit in two or three in a lengthwise direction. Glue or adhesive is applied to obtain a top plate of a firm structure. The sheet unit has a length at least two times the length of a bottom section of the top plate and a width two times the width of the bottom section. Most of the cutting edges of the sheet unit are not exposed.

Abstract: The present invention discloses a fabrication method of light emitting diodes, which comprises the following steps: firstly, providing three sapphire wafers with each sapphire wafer having a substrate and an epitaxial layer; turning the sapphire wafers upside down and sticking an adhesive tape onto each epitaxial layer; attaching three sapphire wafers to a ceramic work piece; performing coarse grinding on the substrates with a machining table; performing fine grinding on the substrates with a polishing disc; removing the substrate completely with etching; unloading the remaining epitaxial layers and the adhesive tapes, and turning them upside down again, and stripping off the adhesive tapes; forming a conductor via joining the epitaxial layer with an electrically-conductive layer of a metal or another wafer. Thereby, the brightness of LED can be increased; the fabrication process can be accelerated; the yield can be promoted; and the cost can be reduced.

Abstract: The present invention provides a heat dissipating assembly for a heat element comprising a board on which at least a heat source, heat conductive layer and a heat dissipating sheet are set. The heat conductive layer is formed between the heat dissipating sheet and the board by squeeze bonding, thermal fusion or ultrasonic fusion. The heat conductive layer is made up of a material possessing the properties of quick heat conduction and compressive flexibility. While the heat conductive layer is adhered by squeeze bonding, thermal fusion or ultrasonic fusion, heat is conducted by its entire surface. The present invention is able to raise the heat dissipating efficacy and draw out the heat from the heat source quickly, therefore, increases the brightness and durability of the light source.

Abstract: The present invention discloses a high-power-laser chip-fabrication apparatus and a method thereof, wherein a substrate is fixed on a working table; a light-guide device is used to direct a high power laser to a scribed line on the substrate; a control device is used to position the working table and the high power laser so that the high power laser can be precisely aimed at the scribed line to be cut; a video device is used to observe whether the high power has been aimed at the scribed line; an object lens is used to adjust the focal length by which the high power laser is to be aimed at one of the scribed lines; the length of the scribed line to be cut and the spacing between two scribed lines are input; and then, the cutting is performed. The present invention can cut the substrate quickly and precisely into multiple discrete chips and accelerate the fabrication process.

Abstract: The present invention discloses a short-wavelength laser dicing apparatus for a diamond wafer and a dicing method thereof, wherein a diamond wafer is disposed on a working table; the diamond wafer has multiple scribed lines; a control device is used to position the working table and a short-wavelength laser so that the short-wavelength laser can sequentially cut the scribed lines and the diamond wafer can be separated into multiple discrete chips or dice. The present invention utilizes the high-energy photons of a short-wavelength laser to enable a diamond wafer to be easily cut and can accelerate the cutting process.

Abstract: The present invention discloses a laser dicing apparatus for a silicon wafer and a dicing method thereof, wherein firstly, a silicon wafer, which has multiple chips with a scribed line drawn between every two chips, is provided; next, the silicon wafer is disposed on a working table having a vacuum device and fixed by the vacuum device; next, the working table and a laser are positioned by a control device; next, the laser is directed by a light-guide device to focus at one of the scribed lines; and lastly, the scribed lines on the silicon wafer are sequentially cut by the laser in order to dice the silicon wafer into multiple separate chips. The present invention can reduce the cutting harm on chips, lower the cost, accelerate the fabrication and improve environmental problems.

Abstract: The present invention discloses a laser dicing apparatus for a gallium arsenide wafer and a method thereof, wherein firstly, a gallium arsenide wafer is stuck onto a holding film; next, the gallium arsenide wafer together with the holding film is disposed on a working table; the gallium arsenide wafer has multiple chips or dice with a scribed line drawn between every two chips; a control device and an object lens are used to position the working table and a laser, and two video devices are used to observe whether the laser has been precisely aimed at one of the scribed lines; after parameters have been input into the control device, the laser is used to cut the gallium arsenide wafer, and the gallium arsenide wafer is then separated into multiple discrete chips or dice. The present invention can precisely cut gallium arsenide wafers, reduce the cost and accelerate the fabrication process.

Abstract: The present invention discloses a high-power solid-state laser dicing apparatus for a gallium nitride wafer and a dicing method thereof, wherein a gallium nitride wafer is disposed on a working table; the gallium nitride wafer has multiple chips or dice with a scribed line drawn between every two chips or dice; a light-guide device is used to direct a high-power solid-state laser to one of the scribed lines on the gallium nitride wafer; a control device is used to position the working table and the high-power solid-state laser so that the high-power solid-state laser can be precisely aimed at one of the scribed lines on the gallium nitride; and the high-power solid-state laser is then used to cut the gallium nitride wafer in order to separate the gallium nitride wafer into multiple discrete chips or dice. The present invention can save the manpower, cost and time of cutting a gallium nitride wafer, and can precisely cut a gallium nitride wafer without injuring the surface of the gallium nitride wafer.

Abstract: A combined chip/heat-dissipating metal plate includes a chip and a heat-dissipating metal plate bonded to a side of the chip, wherein the heat-dissipating metal plate is in a stretched state. The heat-dissipating metal plate is stretched before bonding the chip. Preferably, the stretched heat-dissipating metal plate has a thickness smaller than that of the heat-dissipating metal plate before stretching by not more than 20%. The chip has good compression strength in the radial direction and the heat-dissipating metal plate has higher tensile strength after being stretched and taking shape, providing a more stable structure and avoiding damage to the chip due to radially outward tension. The combined chip/heat-dissipating metal plate thus obtained is more stable and thus benefits the subsequent cutting by a laser cutting apparatus.

Abstract: A transparent plastic film for chip cutting is made of polyethylene terephathalate that has an excellent transmittance to laser beams. When a laser beam passes through the plastic film and a chip mounted on a central area of an upper face of the plastic film, the heat generated during penetration of the laser beam through the plastic film is less than that in the conventional plastic films, avoiding damage to the plastic film and replacement of the plastic film. A heat-dissipating ring may be mounted on the upper face of the plastic film and located in a central hole of a supporting ring adhered to a perimeter of the upper face of the plastic film. The heat-dissipating ring surrounds the chip to cover a return point of the laser beam, preventing the plastic film from being damaged.

Abstract: A laser cutting apparatus for cutting a chip includes a working table with a through-hole, a laser device mounted above the working table, the laser device generating a laser beam for cutting the chip, and an electronic microcamera mounted below the working table for observing the chip on the working table via the through-hole of the working table. A chip is mounted on the working table and located on top of the through-hole of the working table. The laser beam cuts a light-tight layer and an epilayer of the chip from top of the chip, obtaining individual crystallites without damaging the performance of the crystallites. The ratio of qualified crystallites is increased, allowing mass production of the crystallites.

Abstract: A novel structure for the TEQ in a DMT system receiver to shorten the length of the effective channel impulse response is provided. A time-domain equalizer, based on the decision-feedback filter structure, along with a training method is disclosed. In accordance with the DFE-based TEQ in the DMT system, the data symbols that transmitted through the effective shortened channel would be more reliable.

Abstract: The present invention discloses a grinding method for a sapphire wafer, wherein a sapphire wafer is firstly provided, and the sapphire wafer has a substrate and an electrically-conductive layer; the sapphire wafer is fixed onto a fixing base; the fixing base is further fixed to a machining table, and the substrate of the sapphire wafer is ground thereon; then, the fixing base is placed on a polishing disc, and the substrate is further thinned thereon; and lastly, the substrate is completely removed via an etching method. The present invention can shorten the time for removing the substrate of a sapphire wafer and also shorten the time for LED fabrication process; thus, the cost is reduced. Further, LED can work normally at high temperature, and the danger resulting from LED's working at high temperature can also be lessened.