Abstract: Provided is a method of characterizing photolithography lens quality. The method includes selecting an overlay pattern having a first feature with a first pitch and a second feature with a second pitch different than the first pitch, performing a photolithography simulation to determine a sensitivity coefficient associated with the overlay pattern, and providing a photomask having the overlay pattern thereon. The method also includes exposing, with a photolithography tool, a wafer with the photomask to form the overlay pattern on the wafer, measuring a relative pattern placement error of the overlay pattern formed on the wafer, and calculating a quality indicator for a lens in the photolithography tool using the relative pattern placement error and the sensitivity coefficient.

Abstract: The present disclosure provides methods and systems for providing a similarity index in semiconductor process control. One of the methods disclosed herein is a method for semiconductor fabrication process control. The method includes steps of receiving a first semiconductor device wafer and receiving a second semiconductor device wafer. The method also includes a step of collecting metrology data from the first and second semiconductor device wafers. The metrology data includes a first set of vectors associated with the first semiconductor device wafer and a second set of vectors associated with the second semiconductor device wafer. The method includes determining a similarity index based in part on a similarity index value between a first vector from the first set of vectors and a second vector from the second set of vectors and continuing to process additional wafers under current parameters when the similarity index is above a threshold value.

Abstract: A method for overlay monitoring and control is introduced in the present disclosure. The method comprises forming resist patterns on one or more wafers in a lot by an exposing tool; selecting a group of patterned wafers in the lot using a wafer selection model; selecting a group of fields for each of the selected group of patterned wafers using a field selection model; selecting at least one point in each of the selected group of fields using a point selection model; measuring overlay errors of the selected at least one point on a selected wafer; forming an overlay correction map using the measured overlay errors on the selected wafer; and generating a combined overlay correction map using the overlay correction map of each selected wafer in the lot.

Abstract: A method includes directing a beam of radiation along an optical axis toward a workpiece support, measuring a spectrum of the beam at a first time to obtain a first profile, measuring the spectrum of the beam at a second time to obtain a second profile, determining a spectral difference between the two profiles, and adjusting a position of the workpiece support along the optical axis based on the difference. A different aspect involves an apparatus having a workpiece support, beam directing structure that directs a beam of radiation along an optical axis toward the workpiece support, spectrum measuring structure that measures a spectrum of the beam at first and second times to obtain respective first and second profiles, processing structure that determines a difference between the two profiles, and support adjusting structure that adjusts a position of the workpiece support along the optical axis based on the difference.

Abstract: The present disclosure provides methods and systems for providing a similarity index in semiconductor process control. One of the methods disclosed herein is a method for semiconductor fabrication process control. The method includes steps of receiving a first semiconductor device wafer and receiving a second semiconductor device wafer. The method also includes a step of collecting metrology data from the first and second semiconductor device wafers. The metrology data includes a first set of vectors associated with the first semiconductor device wafer and a second set of vectors associated with the second semiconductor device wafer. The method includes determining a similarity index based in part on a similarity index value between a first vector from the first set of vectors and a second vector from the second set of vectors and continuing to process additional wafers under current parameters when the similarity index is above a threshold value.

Abstract: A method for overlay monitoring and control is introduced in the present disclosure. The method comprises forming resist patterns on one or more wafers in a lot by an exposing tool; selecting a group of patterned wafers in the lot using a wafer selection model; selecting a group of fields for each of the selected group of patterned wafers using a field selection model; selecting at least one point in each of the selected group of fields using a point selection model; measuring overlay errors of the selected at least one point on a selected wafer; forming an overlay correction map using the measured overlay errors on the selected wafer; and generating a combined overlay correction map using the overlay correction map of each selected wafer in the lot.

Abstract: A method of determining overlay error in semiconductor device fabrication includes receiving an image of an overlay mark formed on a substrate. The received image is separated into a first image and a second image, where the first image includes representations of features formed on a first layer of the substrate and the second image includes representations of the features formed on a second layer of the substrate. A quality indicator is determined for the first image and a quality indicator is determined for the second image. In an embodiment, the quality indicators include asymmetry indexes.

Abstract: A method for controlling semiconductor production through use of a hybrid Focus Exposure Matrix (FEM) model includes taking measurements of a set of structures formed onto a substrate. The method further includes using a FEM model to determine focus and exposure conditions used to form the structure The model was created through use of measurements of structures formed on a substrate under varying focus and exposure conditions, the measurements being taken using both an optical measurement tool and a scanning electron microscope.

Abstract: A method for controlling semiconductor production through use of a Focus Exposure Matrix (FEM) model includes taking measurements of characteristics of a two-dimensional mark formed onto a substrate, the two-dimensional mark including two different patterns along two different cut-lines, and comparing the measurements with a FEM model to determine focus and exposure conditions used to form the two-dimensional mark. The FEM model was created using measurements taken of corresponding two-dimensional marks formed onto a substrate under varying focus and exposure conditions.

Abstract: In one embodiment, a method for detecting design defects is provided. The method includes receiving design data of an integrated circuit (IC) on a wafer, measuring wafer topography across the wafer to obtain topography data, calculating a scanner moving average from the topography data and the design data to provide a scanner defocus map across the wafer, and determining a hotspot design defect from the scanner defocus map. A computer readable storage medium, and a system for detecting design defects are also provided.

Abstract: A method includes directing a beam of radiation along an optical axis toward a workpiece support, measuring a spectrum of the beam at a first time to obtain a first profile, measuring the spectrum of the beam at a second time to obtain a second profile, determining a spectral difference between the two profiles, and adjusting a position of the workpiece support along the optical axis based on the difference. A different aspect involves an apparatus having a workpiece support, beam directing structure that directs a beam of radiation along an optical axis toward the workpiece support, spectrum measuring structure that measures a spectrum of the beam at first and second times to obtain respective first and second profiles, processing structure that determines a difference between the two profiles, and support adjusting structure that adjusts a position of the workpiece support along the optical axis based on the difference.

Abstract: Provided is an apparatus that includes an overlay mark. The overlay mark includes a first portion that includes a plurality of first features. Each of the first features have a first dimension measured in a first direction and a second dimension measured in a second direction that is approximately perpendicular to the first direction. The second dimension is greater than the first dimension. The overlay mark also includes a second portion that includes a plurality of second features. Each of the second features have a third dimension measured in the first direction and a fourth dimension measured in the second direction. The fourth dimension is less than the third dimension. At least one of the second features is partially surrounded by the plurality of first features in both the first and second directions.

Abstract: A method of determining overlay error in semiconductor device fabrication includes receiving an image of an overlay mark formed on a substrate. The received image is separated into a first image and a second image, where the first image includes representations of features formed on a first layer of the substrate and the second image includes representations of the features formed on a second layer of the substrate. A quality indicator is determined for the first image and a quality indicator is determined for the second image.

Abstract: A method includes directing a beam of radiation along an optical axis toward a workpiece support, measuring a spectrum of the beam at a first time to obtain a first profile, measuring the spectrum of the beam at a second time to obtain a second profile, determining a spectral difference between the two profiles, and adjusting a position of the workpiece support along the optical axis based on the difference. A different aspect involves an apparatus having a workpiece support, beam directing structure that directs a beam of radiation along an optical axis toward the workpiece support, spectrum measuring structure that measures a spectrum of the beam at first and second times to obtain respective first and second profiles, processing structure that determines a difference between the two profiles, and support adjusting structure that adjusts a position of the workpiece support along the optical axis based on the difference.

Abstract: Provided is a method of characterizing photolithography lens quality. The method includes selecting an overlay pattern having a first feature with a first pitch and a second feature with a second pitch different than the first pitch, performing a photolithography simulation to determine a sensitivity coefficient associated with the overlay pattern, and providing a photomask having the overlay pattern thereon. The method also includes exposing, with a photolithography tool, a wafer with the photomask to form the overlay pattern on the wafer, measuring a relative pattern placement error of the overlay pattern formed on the wafer, and calculating a quality indicator for a lens in the photolithography tool using the relative pattern placement error and the sensitivity coefficient.

Abstract: In one embodiment, a method for detecting design defects is provided. The method includes receiving design data of an integrated circuit (IC) on a wafer, measuring wafer topography across the wafer to obtain topography data, calculating a scanner moving average from the topography data and the design data to provide a scanner defocus map across the wafer, and determining a hotspot design defect from the scanner defocus map. A computer readable storage medium, and a system for detecting design defects are also provided.

Abstract: Provided is an apparatus that includes an overlay mark. The overlay mark includes a first portion that includes a plurality of first features. Each of the first features have a first dimension measured in a first direction and a second dimension measured in a second direction that is approximately perpendicular to the first direction. The second dimension is greater than the first dimension. The overlay mark also includes a second portion that includes a plurality of second features. Each of the second features have a third dimension measured in the first direction and a fourth dimension measured in the second direction. The fourth dimension is less than the third dimension. At least one of the second features is partially surrounded by the plurality of first features in both the first and second directions.

Abstract: In one embodiment, a method for extracting systematic defects is provided. The method includes inspecting a wafer outside a process window to obtain inspection data, defining a defect pattern from the inspection data, filtering defects from design data using a pattern search for the defined defect pattern within the design data, inspecting defects inside the process window with greater sensitivity than outside the process window, and determining systematic defects inside the process window. A computer readable storage medium, and a system for extracting systematic defects are also provided.

Abstract: A system for overlay offset measurement in semiconductor manufacturing including a radiation source, a detector, and a calculation unit. The radiation source is operable to irradiate an overlay offset measurement target. The detector is operable to detect a first reflectivity and a second reflectivity of the irradiated overlay offset measurement target. The calculation unit is operable to determine an overlay offset using the detected first and second reflectivity by determining a predetermined overlay offset amount which provides an actual offset of zero.

Abstract: A method includes directing a beam of radiation along an optical axis toward a workpiece support, measuring a spectrum of the beam at a first time to obtain a first profile, measuring the spectrum of the beam at a second time to obtain a second profile, determining a spectral difference between the two profiles, and adjusting a position of the workpiece support along the optical axis based on the difference. A different aspect involves an apparatus having a workpiece support, beam directing structure that directs a beam of radiation along an optical axis toward the workpiece support, spectrum measuring structure that measures a spectrum of the beam at first and second times to obtain respective first and second profiles, processing structure that determines a difference between the two profiles, and support adjusting structure that adjusts a position of the workpiece support along the optical axis based on the difference.