Abstract: A traffic control method, adapted to a server, includes detecting a packet sent by user equipment and transmitted through a base station to obtain packet information of the packet, wherein the packet information comprises an Internet protocol address, determining whether the packet information is abnormal, tagging identification information corresponding to the Internet protocol address when the packet information is abnormal, and blocking a connection between the user equipment and a network based on the identification information.

Abstract: A method includes forming a first fin protruding above a substrate, the first fin having a PMOS region; forming a first gate structure over the first fin in the PMOS region; forming a first spacer layer over the first fin and the first gate structure; and forming a second spacer layer over the first spacer layer. The method further includes performing a first etching process to remove the second spacer layer from a top surface and sidewalls of the first fin in the PMOS region; performing a second etching process to remove the first spacer layer from the top surface and the sidewalls of the first fin in the PMOS region; and epitaxially growing a first source/drain material over the first fin in the PMOS region, the first source/drain material extending along the top surface and the sidewalls of the first fin in the PMOS region.

Abstract: A brittle object cutting apparatus and the method thereof are disclosed. Wherein, the brittle object cutting apparatus comprises a first heating laser unit, a second heating laser unit, a scribing laser unit, two cooling units and a processing module. A heating laser from the heating laser units respectively located on opposite sides of a scribing laser from the scribing laser unit, and a coolant of the cooling unit followed behind the heating laser. In the moving process of the brittle object, the processing module controls the scribing laser for a scribing operation, and controls one of the heating lasers and the coolant form one of the cooling units to heat and cool the brittle object. As a result, the machining time of dicing the brittle objects may be effectively reduced.

Abstract: A method includes forming a first fin protruding above a substrate, the first fin having a PMOS region; forming a first gate structure over the first fin in the PMOS region; forming a first spacer layer over the first fin and the first gate structure; and forming a second spacer layer over the first spacer layer. The method further includes performing a first etching process to remove the second spacer layer from a top surface and sidewalls of the first fin in the PMOS region; performing a second etching process to remove the first spacer layer from the top surface and the sidewalls of the first fin in the PMOS region; and epitaxially growing a first source/drain material over the first fin in the PMOS region, the first source/drain material extending along the top surface and the sidewalls of the first fin in the PMOS region.

Abstract: A method includes forming a first fin protruding above a substrate, the first fin having a PMOS region; forming a first gate structure over the first fin in the PMOS region; forming a first spacer layer over the first fin and the first gate structure; and forming a second spacer layer over the first spacer layer. The method further includes performing a first etching process to remove the second spacer layer from a top surface and sidewalls of the first fin in the PMOS region; performing a second etching process to remove the first spacer layer from the top surface and the sidewalls of the first fin in the PMOS region; and epitaxially growing a first source/drain material over the first fin in the PMOS region, the first source/drain material extending along the top surface and the sidewalls of the first fin in the PMOS region.

Abstract: A method includes forming a first fin protruding above a substrate, the first fin having a PMOS region; forming a first gate structure over the first fin in the PMOS region; forming a first spacer layer over the first fin and the first gate structure; and forming a second spacer layer over the first spacer layer. The method further includes performing a first etching process to remove the second spacer layer from a top surface and sidewalls of the first fin in the PMOS region; performing a second etching process to remove the first spacer layer from the top surface and the sidewalls of the first fin in the PMOS region; and epitaxially growing a first source/drain material over the first fin in the PMOS region, the first source/drain material extending along the top surface and the sidewalls of the first fin in the PMOS region.

Abstract: A method includes forming a first fin protruding above a substrate, the first fin having a PMOS region; forming a first gate structure over the first fin in the PMOS region; forming a first spacer layer over the first fin and the first gate structure; and forming a second spacer layer over the first spacer layer. The method further includes performing a first etching process to remove the second spacer layer from a top surface and sidewalls of the first fin in the PMOS region; performing a second etching process to remove the first spacer layer from the top surface and the sidewalls of the first fin in the PMOS region; and epitaxially growing a first source/drain material over the first fin in the PMOS region, the first source/drain material extending along the top surface and the sidewalls of the first fin in the PMOS region.

Abstract: A method includes forming a first fin protruding above a substrate, the first fin having a PMOS region; forming a first gate structure over the first fin in the PMOS region; forming a first spacer layer over the first fin and the first gate structure; and forming a second spacer layer over the first spacer layer. The method further includes performing a first etching process to remove the second spacer layer from a top surface and sidewalls of the first fin in the PMOS region; performing a second etching process to remove the first spacer layer from the top surface and the sidewalls of the first fin in the PMOS region; and epitaxially growing a first source/drain material over the first fin in the PMOS region, the first source/drain material extending along the top surface and the sidewalls of the first fin in the PMOS region.

Abstract: A brittle object cutting apparatus and the method thereof are disclosed. Wherein, the brittle object cutting apparatus comprises a first heating laser unit, a second heating laser unit, a scribing laser unit, two cooling units and a processing module. A heating laser from the heating laser units respectively located on opposite sides of a scribing laser from the scribing laser unit, and a coolant of the cooling unit followed behind the heating laser. In the moving process of the brittle object, the processing module controls the scribing laser for a scribing operation, and controls one of the heating lasers and the coolant form one of the cooling units to heat and cool the brittle object. As a result, the machining time of dicing the brittle objects may be effectively reduced.

Abstract: A lens includes a substrate, a light concentrating portion mounted on the substrate. The substrate includes a first substrate and a second substrate, the light concentrating portion includes a first light concentrating portion and a second light concentrating portion. The first light concentrating portion extends outward from the first substrate, the second light concentrating portion extends outward from the second substrate. The first light concentrating portion has a first axis, the second light concentrating portion has a second axis. The first axis and the second axis are configured in an angle and intersect in an extending direction thereof.

Abstract: A brittle object cutting apparatus and the method thereof are disclosed. Wherein, the brittle object cutting apparatus comprises a first heating laser unit, a second heating laser unit, a scribing laser unit, two cooling units and a processing module. A heating laser from the heating laser units respectively located on opposite sides of a scribing laser from the scribing laser unit, and a coolant of the cooling unit followed behind the heating laser. In the moving process of the brittle object, the processing module controls the scribing laser for a scribing operation, and controls one of the heating lasers and the coolant form one of the cooling units to heat and cool the brittle object. As a result, the machining time of dicing the brittle objects may be effectively reduced.

Abstract: A lens includes a substrate, a light concentrating portion mounted on the substrate. The substrate includes a first substrate and a second substrate, the light concentrating portion includes a first light concentrating portion and a second light concentrating portion. The first light concentrating portion extends outward from the first substrate, the second light concentrating portion extends outward from the second substrate. The first light concentrating portion has a first axis, the second light concentrating portion has a second axis. The first axis and the second axis are configured in an angle and intersect in an extending direction thereof.

Abstract: An LED light source device includes an LED light source, a first translucent structure covering the LED light source and a second translucent structure covering the first translucent structure. An interior of the first translucent structure has light scattering powder distributed therein. The LED light source is embedded in the first translucent structure. The LED light source is covered by the light scattering powder. The second translucent structure has a radius of R and an index of refraction of N1, while the first translucent structure has a radius of r, wherein R, r and N1 satisfy the following relation: N1<R/(2r?R).

Abstract: A method of photocuring a coating film includes steps: providing a component, and coating the coating film on the component; then a pulse UV LED light source is used to irradiate the coating film to thereby solidify the coating film. During the on time of the pulse UV light source, it supplies a UV light with an enhanced intensity to the coating film to cause a top surface of the coating film to be cured quickly. Accordingly, a reaction between oxygen and free radicals in the coating film can be effectively avoided.

Abstract: A light emitting diode (LED) device includes a light guiding member having a light incident surface, and an LED light bar mounted on the light incident surface. The LED light bar includes a printed circuit board, LEDs mounted on the printed circuit board, and encapsulating layers formed on the printed circuit board and respectively encapsulating the LEDs therein. Each encapsulating layer includes a light outputting surface away from the printed circuit board. The light incident surface faces the light outputting surface and air between the light incident surface and the light outputting surface is entirely exhausted.

Abstract: A light emitting device includes a light source module and a secondary optical element. The optical element includes a light incident surface and a light radiating surface opposite to the light incident surface. The light source module includes at least one light emitting unit, and the light emitting unit includes a light emitting diode (LED) chip and an encapsulation layer. The encapsulation layer includes a light outputting surface. The light incident surface faces to the light outputting surface. A gap is defined between the light outputting surface and the light incident surface, and a transparent colloid is filled in the gap. The transparent colloid has a refractive index similar to that of the second optical element and the encapsulation layer. A method for manufacturing the light emitting device is also provided.

Abstract: A photoelectric device having Group III nitride semiconductor includes a conductive layer, a metallic mirror layer located on the conductive layer, and a Group III nitride semiconductor layer located on the metallic mirror layer. The Group III nitride semiconductor layer defines a number of microstructures thereon. Each microstructure includes at least one angled face, and the angled face of each microstructure is a crystal face of the Group III nitride semiconductor layer.

Abstract: A method for fabricating a light emitting diode includes steps of: forming a light emitting structure of the light emitting diode on a substrate; arranging a photoresist layer on a first semiconductor layer of the light emitting structure; depositing a plurality of dielectric material structures on the first semiconductor layer through a plurality of voids of the photoresist layer; removing the photoresist layer to form a plurality of voids between the plurality of dielectric material structures; forming a plurality of metal material structures in the plurality of voids; and forming a reflective layer on the plurality of dielectric material structures and the plurality of metal material structures.

Abstract: An LED light bar comprises a housing, a circuit board with a plurality of separated portions located on the housing, a plurality of LED package devices disposed on the circuit board and electrically connecting to the circuit board, and a plurality of power dispensers respectively electrically connecting to the separated portions of the circuit board. The plurality of LED package devices is divided into a plurality of groups respectively on the plurality of separated portions of the circuit board, wherein the plurality of LED package devices of each of the groups forms a closed loop. Each separated portion of the circuit board includes a metal layer on the housing, an insulating layer on the metal layer and a circuit layer on the insulating layer. Each group of the LED package devices is on a corresponding circuit layer.

Abstract: A method for fabricating a light emitting diode includes steps of: forming a light emitting structure of the light emitting diode on a substrate; arranging a photoresist layer on a first semiconductor layer of the light emitting structure; depositing a plurality of dielectric material structures on the first semiconductor layer through a plurality of voids of the photoresist layer; removing the photoresist layer to form a plurality of voids between the plurality of dielectric material structures; forming a plurality of metal material structures in the plurality of voids; and forming a reflective layer on the plurality of dielectric material structures and the plurality of metal material structures.