Abstract: An exemplary semiconductor solid-state light-source module includes a printed circuit board, at least one semiconductor solid state light source mounted on the printed circuit board and a light guide plate optically coupled to the semiconductor solid state light source. The printed circuit board includes a protrusion and a recess. The protrusion is configured for engaging with a recess of the printed circuit board of another similar semiconductor solid-state light-source module.

Abstract: An extrusion die device includes a first die having a shaping hole. An inner periphery of the shaping hole has a plurality of twisted guiding portions. A second die includes a plurality of guiding holes. A bridge is formed between two adjacent guiding holes. A plurality of tongues extends from a surface of each bridge and each includes an input end face contiguous to the bridge and an output end face whose projection on the surface of the bridge has an angular shift relative to the input end face. A side of the second die is coupled to an input side of the first die. The tongues are received in the shaping hole. Material is squeezed through a passage between each tongue and the inner periphery of the shaping hole and rotates according to the twisting direction of the tongues, forming a hollow object with an integrally formed helical rib.

Abstract: A light emitting diode includes a reflective cup, an LED chip, and many electrodes, a first light scattering layer, and a phosphor layer. The reflective cup includes a bottom and a sidewall extending from the bottom. The LED chip is received in the reflective cup and mounted on the bottom thereof for emitting first light of a first wavelength. The electrodes each has a first end electrically connected to the LED chip and an opposite second end exposed at an outer surface of the reflective cup. The first light scattering layer formed in the reflective cup on the bottom thereof and covering the LED chip, which has a concave surface at an opposite side thereof to the LED chip. The phosphor layer formed on the concave surface of the light scattering layer for converting part of the first light into second light of a second wavelength.

Abstract: An exemplary planar light source apparatus includes a number of lighting elements and a number of mirror reflectors. The lighting elements are arranged on a same plane and facing a same direction. The mirror reflectors each have a reflecting surface facing the lighting elements. The reflecting surfaces are perpendicular to the plane.

Abstract: A semiconductor light-emitting device comprises an N-type semiconductor layer, an active layer formed on the surface of the N-type semiconductor layer, a P-type semiconductor layer formed on the surface of the active layer, and a reflective layer formed on the surface of the P-type semiconductor layer. A plurality of ohmic contact blocks with electrical properties of ohmic contact are on the surface of the reflective layer adjacent to the P-type semiconductor layer, and the remaining part of the surface acts as the reflective regions with higher reflectivity, and the reflective regions can effectively reflect the light generated from the active layer.

Abstract: A light emitting device with an electron blocking combination layer comprises an active layer, an n-type GaN layer, a p-type GaN layer, and an electron blocking combination layer which has two Group III-V semiconductor layers with different band gaps that can be deposited periodically and repeatedly on the active layer to block overflowing electrons from the active layers.

Abstract: A light emitting diode is disclosed, wherein the light emitting diode comprises a metal reflective layer for enhancing the light reflection efficiency inside the light emitting diode and reducing the resistance to avoid the power loss. In addition, the light emitting diode further comprises a buffer layer sandwiched between the metal reflective layer and a semiconductor layer, wherein the buffer layer is mixed with metal and non-metallic transparent material for reducing the stress between the semiconductor and the metal to decrease the possibility of the die cracking.

Abstract: A light emitting diode illuminating apparatus for emitting colorful light includes a substrate, a first lighting element, a second lighting element, a third lighting element. The first, second and third lighting elements are juxtaposed at the substrate. The first lighting element includes a first LED chip, and a first filling layer encapsulating it. The first filling layer includes red phosphor generally evenly doped therein. The second lighting element includes a second LED chip and a second filling layer encapsulating it. The third lighting element includes a third LED chip and a third filling layer encapsulating it. All of the first, the second and the third LED chips are the same kind of LED chip selected from the group consisting of GaN LED chips, AlGaN LED chips and InGaN LED chips. Light emitting from the filling layers are capable of mixing to produce light of a uniform color.

Abstract: A flip-chip light emitting diode includes a substrate, an LED chip and a plurality of conductive bumps. The substrate has at least one recess defined in the surface of the substrate, and at least a part of the conductive bumps is embedded the at least one recess. The LED chip is mounted on a surface of the substrate by a flip-chip mounting process. The conductive bumps are sandwiched between the substrate and the LED chip to bond and electrically connect the LED chip to the substrate.

Abstract: A gallium nitride-based light emitting device with a roughened surface is described. The light emitting device comprises a substrate, a buffer layer grown on the substrate, an n-type III-nitride semiconductor layer grown on the buffer layer, a III-nitride semiconductor active layer grown on the n-type III-nitride semiconductor layer, a first p-type III-nitride semiconductor layer grown on the III-nitride semiconductor active layer, a heavily doped p-type III semiconductor layer grown on the first p-type III-nitride semiconductor, and a roughened second p-type III-nitride semiconductor layer grown on the heavily doped p-type III semiconductor layer.

Abstract: An exemplary keyboard is provided. The keyboard includes a light pervious base plate, a plurality of input keys, and at least one light source. The light pervious base plate has a top surface. The plurality of input keys are disposed on the light pervious base plate with bottom sides of the input keys facing the top surface of the light pervious base plate. The at least one light source is encapsulated in the light pervious base plate and optically coupled to the light pervious panel.

Abstract: A method for separating a semiconductor from a substrate is disclosed. The method comprises the following steps: forming a plurality of columns on a substrate; epitaxially growing a semiconductor on the plurality of columns; and injecting etching liquid into the void among the plurality of columns so as to separate the semiconductor from the substrate. The method of this invention can enhance the etching efficiency of separating the semiconductor from the substrate and reduce the fabrication cost because the etching area is increased due to the void among the plurality of columns. In addition, the method will not confine the material of the above-mentioned substrate.

Abstract: Electrospray evaporative cooling (ESC). Means for effectuating thermal management using electrospray cooling are presented herein. An ESC may be implemented having one or more nozzles situated to spray droplets of a fluid towards a target. Because the fluid may be electrolytic, an electric field may be established between the one or more nozzles and the target can be operative to govern the direction, rate, etc. of the electrospraying between the one or more nozzles and the target. An additional shielding/field enhancement electrode may also be implemented between the one or more nozzles and the target. A droplet movement mechanism may be employed to transport droplets received at a first location of the target so that evaporation thereof may occur relatively more at a second location of the target. An ESC device may be implemented to effectuate thermal management of any of a variety of types of electronic devices.

Abstract: A method of fabricating a photoelectric device of Group III nitride semiconductor comprises the steps of: forming a first Group III nitride semiconductor layer on a surface of an original substrate; forming a patterned epitaxial-blocking layer on the first Group III nitride semiconductor layer; forming a second Group III nitride semiconductor layer on the epitaxial-blocking layer and the first Group III nitride semiconductor layer not covered by the epitaxial-blocking layer and then removing the epitaxial-blocking layer; forming a third Group III nitride semiconductor layer on the second Group III nitride semiconductor layer; depositing or adhering a conductive layer on the third Group III nitride semiconductor layer; and releasing a combination of the third Group III nitride semiconductor layer and the conductive layer apart from the second Group III nitride semiconductor layer.

Abstract: A photocatalyst device includes a photocatalyst member and a light source. The light source is configured to emit ultraviolet light to the photocatalyst member. The ultraviolet light has a wavelength equal to or less than about 400 nanometers, and more than 365 nanometers.

Abstract: An exemplary method for jointing a semiconductor element and a heat pipe includes: providing a heat pipe shell which has an open end; forming a capillary structure layer on an inner wall of the heat pipe shell; jointing a semiconductor element with the heat pipe shell by metal jointing; injecting a working fluid into the heat pipe shell and discharging air or gas from the heat pipe shell; and sealing the open end of the heat pipe shell.

Abstract: A photo-catalyst air cleaner includes at least one light source, a photo-catalyst filter and a first water supply. The photo-catalyst filter includes a hydrophilic substrate with a layer formed on a surface of the substrate exposed to light from the at least one light source. The water supply is configured for supplying water for absorption by the substrate, thereby humidifying surfaces of the photo-catalyst filter.

Abstract: An exemplary LED package includes a dielectric plate, a heat conductor, a first planar electrode and a second planar electrode, a LED chip, and metal wires. The dielectric plate comprises a receiving groove defined therein. The heat conductor is positioned in the dielectric plate opposite to the receiving groove, and the heat conductor comprises a holding portion exposed on bottom of the receiving groove. The first and second planar electrodes are respectively received in the dielectric plate extending to the receiving groove and are spaced from the heat conductor. The first and second electrodes are respectively electrically connected to the LED chip by the metal wires. The LED chip is mounted on the holding portion of the heat conductor.

Abstract: An air cleaner includes a photo-catalyst filter, a light source and an ozone generator. The light source is configured for emitting light having a given wavelength to activate the photo-catalyst layer to decompose contaminants thereon. The ozone generator is configured for generating ozone flowing through the photo-catalyst layer to promote decomposition of the contaminants on the photo-catalyst layer.

Abstract: A photo-catalyst cleaning device includes a first photo-catalyst layer and a first electrode plate. The first photo-catalyst layer is capable of generating electrons and holes when absorbing excitation light. The first electrode plate is positioned corresponding to the first photo-catalyst layer. The first electrode plate is capable of polarizing the electrons and holes generated from the first photo-catalyst layer when bias voltage is applied to the first electrode plate.