Abstract: A light emitting diode is disclosed, wherein the light emitting diode comprises a metal reflective layer for enhancing the light reflection efficiency inside the light emitting diode and reducing the resistance to avoid the power loss. In addition, the light emitting diode further comprises a buffer layer sandwiched between the metal reflective layer and a semiconductor layer, wherein the buffer layer is mixed with metal and non-metallic transparent material for reducing the stress between the semiconductor and the metal to decrease the possibility of the die cracking.

Abstract: A planar light source apparatus includes a plurality of elongated lighting elements disposed in a common plane, and a plurality of mirror reflectors arranged perpendicular to the common plane and facing the lighting elements. The lighting elements are equidistantly spaced from each other. The lighting elements face a same direction. The mirror reflectors frame the lighting elements. The mirror reflectors each have a reflecting surface facing the lighting elements. The reflecting surfaces are perpendicular to the common plane. A distance between one of the reflectors and its nearest lighting element is maximum of half the distance between two adjacent lighting elements.

Abstract: An extrusion die device includes a first die having a shaping hole. An inner periphery of the shaping hole has a plurality of twisted guiding portions. A second die includes a plurality of guiding holes. A bridge is formed between two adjacent guiding holes. A plurality of tongues extends from a surface of each bridge and each includes an input end face contiguous to the bridge and an output end face whose projection on the surface of the bridge has an angular shift relative to the input end face. A side of the second die is coupled to an input side of the first die. The tongues are received in the shaping hole. Material is squeezed through a passage between each tongue and the inner periphery of the shaping hole and rotates according to the twisting direction of the tongues, forming a hollow object with an integrally formed helical rib.

Abstract: Higher power light emitting diode (LED) modules are thermally managed by thermal coupling to a heat sink. An ion wind fan can be used to provide forced convection for the heat sink. In such a light device, in one embodiment the present invention includes electrically connecting the heat sink to the low voltage terminal of the LED driver, thereby controlling the potential of the heat sink.

Abstract: A planar light source apparatus includes a plurality of elongated lighting elements disposed in a common plane, and a plurality of mirror reflectors arranged perpendicular to the common plane and facing the lighting elements. The lighting elements are equidistantly spaced from each other. The lighting elements face a same direction. The mirror reflectors frame the lighting elements. The mirror reflectors each have a reflecting surface facing the lighting elements. The reflecting surfaces are perpendicular to the common plane. A distance between one of the reflectors and its nearest lighting element is maximum of half the distance between two adjacent lighting elements.

Abstract: A method for separating a semiconductor from a substrate is disclosed. The method comprises the following steps: forming a plurality of columns on a substrate; epitaxially growing a semiconductor on the plurality of columns; and injecting etching liquid into the void among the plurality of columns so as to separate the semiconductor from the substrate. The method of this invention can enhance the etching efficiency of separating the semiconductor from the substrate and reduce the fabrication cost because the etching area is increased due to the void among the plurality of columns. In addition, the method will not confine the material of the above-mentioned substrate.

Abstract: A planar light source apparatus includes a number of lighting elements disposed in a common plane, and a number of mirror reflectors arranged perpendicular to the common plane and facing the lighting elements. The mirror reflectors each have a reflecting surface facing the lighting elements. The light elements are arranged in a lattice such that the distance from one of the reflectors to the nearest lighting element is a maximum of the half the distance between two adjacent lighting elements.

Abstract: A method of fabricating a photoelectric device of Group III nitride semiconductor, where the method comprises the steps of: forming a first Group III nitride semiconductor layer on a surface of a temporary substrate; patterning the first Group III nitride semiconductor layer using photolithography and etching processes; forming a second Group III nitride semiconductor layer on the patterned first Group III nitride semiconductor layer; forming a conductive layer on the second Group III nitride semiconductor layer; and releasing the temporary substrate by removing the first Group III nitride semiconductor layer to obtain a composite of the second Group III nitride semiconductor layer and the conductive layer.

Abstract: An exemplary keyboard is provided. The keyboard includes a light pervious base plate, a plurality of input keys, and at least one light source. The light pervious base plate has a top surface. The plurality of input keys are disposed on the light pervious base plate with bottom sides of the input keys facing the top surface of the light pervious base plate. The at least one light source is encapsulated in the light pervious base plate and optically coupled to the light pervious panel.

Abstract: An exemplary LED package includes a dielectric plate, a heat conductor, a first planar electrode and a second planar electrode, a LED chip, and metal wires. The dielectric plate comprises a receiving groove defined therein. The heat conductor is positioned in the dielectric plate opposite to the receiving groove, and the heat conductor comprises a holding portion exposed on bottom of the receiving groove. The first and second planar electrodes are respectively received in the dielectric plate extending to the receiving groove and are spaced from the heat conductor. The first and second electrodes are respectively electrically connected to the LED chip by the metal wires. The LED chip is mounted on the holding portion of the heat conductor.

Abstract: A semiconductor light-emitting device includes a substrate, a buffer layer, an n-type semiconductor layer, a conformational active layer and a p-type semiconductor layer. The n-type semiconductor layer includes a first surface and a second surface, and the first surface directly contacts the buffer layer. The second surface includes a plurality of recesses, and a conformational active layer formed on the second surface and within the plurality of recesses. Widths of upper portions of the recesses are larger than widths of lower portions of the recesses. Therefore, the stress between the n-type semiconductor layer and the conformational active layer can be released with the recesses.

Abstract: A light emitting diode illuminating apparatus includes a substrate, a first lighting element and a second lighting element. The first and second lighting elements are juxtaposed at the substrate. The first lighting element includes a first LED chip, and a first filling layer encapsulating the first LED chip. The first filling layer includes red phosphor generally evenly doped therein. The second lighting element includes a second LED chip and a second filling layer encapsulating it. The second filling layer includes two different phosphor materials respectively doped therein. The first LED chip and the second LED chip are the same kind of LED chip selected from the group consisting of GaN LED chips, AlGaN LED chips and InGaN LED chips. Light emitted from the first filling layer and the second filling layer is capable of mixing to produce light of a uniform color.

Abstract: An exemplary solid-state light emitting device includes a substrate, a light emitting structure, a first electrode and a second electrode have opposite polarities with each other. The light emitting structure includes a first-type semiconductor layer, a second-type semiconductor layer and an active layer between the first-type semiconductor layer and the second-type semiconductor layer. The first electrode electrically is connected with the first-type semiconductor layer. The first electrode includes a first contact pad and a current induced electrode spaced apart and insulated from each other. The second electrode has an opposite polarity with respect to the first electrode. The second electrode includes a transparent conductive layer formed on and electrically connected with the second-type semiconductor layer and a metallic conductive layer formed on the transparent conductive layer and in electrical contact therewith.

Abstract: A multichip light emitting diode package is provided. The multichip light emitting diode (LED) package includes a substrate having a non-plane surface including a plurality of sectioned-surfaces, a plurality of light emitting diode chips and a transparent molding material. Each of the light emitting diode chips is disposed on one of the sectioned-surfaces of the substrate. The transparent molding material is formed on the substrate for encapsulating the light emitting diode chips. By way of the configurations of the non-plane surface of the substrate and the transparent molding material, the multichip light emitting diode package emits converging light in accordance with the Snell's law. The purposes of evenly mixing emitting lights and improving brightness are achieved. The present invention can provide a single color, multi-color or full-color multichip LED package with uniform brightness and hues.

Abstract: A photoelectric device having Group III nitride semiconductor includes a conductive layer, a metallic mirror layer located on the conductive layer, and a Group III nitride semiconductor layer located on the metallic mirror layer. The Group III nitride semiconductor layer defines a number of microstructures thereon. Each microstructure includes at least one angled face, and the angled face of each microstructure is a crystal face of the Group III nitride semiconductor layer.

Abstract: A mobile node (MN), a take-over point of attachment (PoA) and handover methods thereof for use in a heterogeneous wireless network system are provided. The heterogeneous wireless network system comprises a gateway, a first wireless network and a second wireless network which is heterogeneous to the first wireless network. The first wireless network and the second wireless network comprise the take-over PoA and an original PoA respectively. The take-over PoA and the original PoA have an overlapping service area. The MN receives a network service from the gateway via the original PoA so far. As soon as the MN enters the overlap service area, the MN builds a link with the take-over PoA in the data-link layer immediately so that the original PoA may handover to the take-over PoA without interrupting the network service.

Abstract: A mobile node (MN), a WiMAX base station (BS), a Wi-Fi access point (AP) and a handover method therefore, for use in a heterogeneous wireless network system, are provided. The heterogeneous wireless network system comprises a gateway. The WiMAX BS and the Wi-Fi AP can interchange messages with each other via the gateway. There is an overlap service area between the WiMAX BS and the Wi-Fi AP. The MN accepts a network service, which is provided by the gateway, via the WiMAX BS. When the MN enters the overlap service area, it may handover to the Wi-Fi AP without interrupting the network service so that the gateway may provide the network service for the MN via the Wi-Fi AP.

Abstract: A method of fabricating a photoelectric device of Group III nitride semiconductor comprises the steps of: forming a first Group III nitride semiconductor layer on a surface of an original substrate; forming a patterned epitaxial-blocking layer on the first Group III nitride semiconductor layer; forming a second Group III nitride semiconductor layer on the epitaxial-blocking layer and the first Group III nitride semiconductor layer not covered by the epitaxial-blocking layer and then removing the epitaxial-blocking layer; forming a third Group III nitride semiconductor layer on the second Group III nitride semiconductor layer; depositing or adhering a conductive layer on the third Group III nitride semiconductor layer; and releasing a combination of the third Group III nitride semiconductor layer and the conductive layer apart from the second Group III nitride semiconductor layer.

Abstract: A method of fabricating a photoelectric device of Group III nitride semiconductor comprises the steps of: forming a first Group III nitride semiconductor layer on a surface of an original substrate; forming a patterned epitaxial-blocking layer on the first Group III nitride semiconductor layer; forming a second Group III nitride semiconductor layer on the epitaxial-blocking layer and the first Group III nitride semiconductor layer not covered by the epitaxial-blocking layer and then removing the epitaxial-blocking layer; forming a third Group III nitride semiconductor layer on the second Group III nitride semiconductor layer; depositing or adhering a conductive layer on the third Group III nitride semiconductor layer; and releasing a combination of the third Group III nitride semiconductor layer and the conductive layer apart from the second Group III nitride semiconductor layer.

Abstract: A backlight module includes a light guide plate, a light source and a ventilating tube. The light guide plate includes a light exiting surface and a light incident surface adjacent the light exiting surface. The light source includes a plurality of light emitting diodes facing the light incident surface of the light guide plate. The ventilating tube is thermally connected to the light source. The ventilating tube defines an air inlet in one first end, an air outlet in an opposite second end, and an air passage channel interconnecting the air inlet to the air outlet. The air outlet is at a higher altitude than the air inlet along a gravitational force direction.