Abstract: A display device is provided. The display device includes a device housing, a knob, a restriction unit and a screen panel. The knob is rotatably connected to the device housing, wherein the knob comprises a latch and a plurality of teeth, the knob is adapted to be rotated between a first knob location and a second knob location, and when the knob is in the first knob location, the latch protrudes from the device housing, and when the knob is in the second knob location, the latch is received in the device housing. The restriction unit is disposed in the device housing, wherein the restriction unit is adapted to be connected to one of the teeth to restrict the knob. The screen panel is detachably connected to the device housing. The display device can be easily detached from a display system.

Abstract: A display device is provided. The display device includes a device housing, a knob, a restriction unit and a screen panel. The knob is rotatably connected to the device housing, wherein the knob comprises a latch and a plurality of teeth, the knob is adapted to be rotated between a first knob location and a second knob location, and when the knob is in the first knob location, the latch protrudes from the device housing, and when the knob is in the second knob location, the latch is received in the device housing. The restriction unit is disposed in the device housing, wherein the restriction unit is adapted to be connected to one of the teeth to restrict the knob. The screen panel is detachably connected to the device housing. The display device can be easily detached from a display system.

Abstract: A retractable virtual reality device includes a rear cover, a front cover, a first restraining component, a second restraining component, and a display module. The front cover is movably combined with the rear cover. The first restraining component is fixed on the front cover. The second restraining component is movably disposed on the rear cover and for restraining the first restraining component. The display module includes a sleeve, a lens, and a display. The sleeve is fixed on the rear cover. The lens is disposed on a side of the sleeve. The display is disposed on the front cover and movably combined with the other side of the sleeve. By cooperation of the first restraining component and the second restraining component, the display and the front cover are movable relative to the lens and the rear cover, which reduces an overall size of the virtual reality device for easy carry.

Abstract: A retractable virtual reality device includes a rear cover, a front cover, a first restraining component, a second restraining component, and a display module. The front cover is movably combined with the rear cover. The first restraining component is fixed on the front cover. The second restraining component is movably disposed on the rear cover and for restraining the first restraining component. The display module includes a sleeve, a lens, and a display. The sleeve is fixed on the rear cover. The lens is disposed on a side of the sleeve. The display is disposed on the front cover and movably combined with the other side of the sleeve. By cooperation of the first restraining component and the second restraining component, the display and the front cover are movable relative to the lens and the rear cover, which reduces an overall size of the virtual reality device for easy carry.

Abstract: A fluid withdrawing, expelling and filtering apparatus includes a fluid container including a first chamber, a second chamber, and, a first through hole and a second through hole respectively disposed in communication between the first chamber and the second chamber, a filter device movable between a first position and a second position to open or close the second through hole of the fluid container and including a filter element mating with the first through hole, and a fluid withdrawing and expelling operator operable to withdraw and expel a fluid through the first chamber of the fluid container.

Abstract: An apparatus and method for processing semiconductor substrates provides a substrate stage being a rotatable disc with a solid surface and a terraced edge with upper, intermediate and lower portions of increasing diameter. A hollow edge ring rests on the intermediate edge portion and a substrate disposed on the rotatable disc is lifted and transported by robot blades positioned beneath the edge ring and which lift the edge ring which holds the substrate around its edges. The rotatable disc and edge ring find application in MOCVD and other semiconductor manufacturing tools.

Abstract: A display device includes a case, a display panel received in the case and a lateral cover coupled to the case. The case includes a main body, an extension body extending from the main body and a frame extending from the main body. The main body and the extension body cooperatively define an opening between the main body and the extension body. The display panel is received between the main body and the frame via the opening. The display panel has a periphery surrounded by the main body and the frame. The lateral cover covers the opening and is coupled to the main body and the extension body.

Abstract: An apparatus and method for processing semiconductor substrates provides a substrate stage being a rotatable disc with a solid surface and a terraced edge with upper, intermediate and lower portions of increasing diameter. A hollow edge ring rests on the intermediate edge portion and a substrate disposed on the rotatable disc is lifted and transported by robot blades positioned beneath the edge ring and which lift the edge ring which holds the substrate around its edges. The rotatable disc and edge ring find application in MOCVD and other semiconductor manufacturing tools.

Abstract: A plurality of semiconductor layers is etched to define a first plurality of stacks of active strips between a first plurality of trenches. A first memory layer is formed on side surfaces of active strips in the first plurality of trenches, and a first layer of conductive material is formed over the first memory layer. The first plurality of stacks is etched to define a second plurality of stacks of active strips between a second plurality of trenches of the plurality of semiconductor layers. A second memory layer is formed on side surfaces of active strips in the second plurality of trenches, and a second layer of conductive material is formed over the second memory layer. Channel regions of memory cells in the memory device are formed in active strips of the plurality of semiconductor layers in the second plurality of stacks.

Abstract: A fluid withdrawing, expelling and filtering apparatus includes a fluid container including a first chamber, a second chamber, and, a first through hole and a second through hole respectively disposed in communication between the first chamber and the second chamber, a filter device movable between a first position and a second position to open or close the second through hole of the fluid container and including a filter element mating with the first through hole, and a fluid withdrawing and expelling operator operable to withdraw and expel a fluid through the first chamber of the fluid container.

Abstract: A method of forming an interlayer conductor structure. The method includes forming a stack of semiconductor pads coupled to respective active layers for a circuit. The semiconductor pads include outside perimeters each having one side coupled to a respective active layer. Impurities are implanted along the outside perimeters to form outside lower resistance regions on the pads. Openings are then formed in the stack of the semiconductor pads to expose a landing area for interlayer conductors on a corresponding semiconductor pad and to define an inside perimeter on at least one of the semiconductor pads. Inside lower resistance regions are formed along the inside perimeters by implanting impurities for interlayer conductor contacts and configured to overlap and be continuous with the corresponding outside lower resistance region.

Abstract: A plurality of layers of a first conductive material is etched to define a first plurality of stacks of conductive strips between a first plurality of trenches, where a stack has a width greater than two times a target width. A first memory layer is formed on side surfaces of conductive strips in the first plurality of trenches, and a first layer of a second conductive material is formed over the first memory layer. The first plurality of stacks is etched to define a second plurality of stacks of conductive strips between a second plurality of trenches, wherein a stack has a width equal to the target width. A second memory layer is formed on side surfaces of conductive strips in the second plurality of trenches, and a second layer of the second conductive material is formed over the second memory layer.

Abstract: A method of forming an interlayer conductor structure. The method includes forming a stack of semiconductor pads coupled to respective active layers for a circuit. The semiconductor pads include outside perimeters each having one side coupled to a respective active layer. Impurities are implanted along the outside perimeters to form outside lower resistance regions on the pads. Openings are then formed in the stack of the semiconductor pads to expose a landing area for interlayer conductors on a corresponding semiconductor pad and to define an inside perimeter on at least one of the semiconductor pads. Inside lower resistance regions are formed along the inside perimeters by implanting impurities for interlayer conductor contacts and configured to overlap and be continuous with the corresponding outside lower resistance region.

Abstract: A method of forming an interlayer conductor structure. The method includes forming a stack of semiconductor pads coupled to respective active layers for a circuit. The semiconductor pads include outside perimeters each having one side coupled to a respective active layer. Impurities are implanted along the outside perimeters to form outside lower resistance regions on the pads. Openings are then formed in the stack of the semiconductor pads to expose a landing area for interlayer conductors on a corresponding semiconductor pad and to define an inside perimeter on at least one of the semiconductor pads. Inside lower resistance regions are formed along the inside perimeters by implanting impurities for interlayer conductor contacts and configured to overlap and be continuous with the corresponding outside lower resistance region.

Abstract: Disclosed is a p-type organic semiconductor material having the formula: Each Con is the same and consists of a conjugated oligomer. Each EW is the same and consists of an electron withdrawing group. The p-type organic semiconductor material can be applied in an active layer of an optoelectronic device, such as an organic solar cell, an organic light-emitting diode, or an organic thin-film transistor.

Abstract: An apparatus and method for processing semiconductor substrates provides a substrate stage being a rotatable disc with a solid surface and a terraced edge with upper, intermediate and lower portions of increasing diameter. A hollow edge ring rests on the intermediate edge portion and a substrate disposed on the rotatable disc is lifted and transported by robot blades positioned beneath the edge ring and which lift the edge ring which holds the substrate around its edges. The rotatable disc and edge ring find application in MOCVD and other semiconductor manufacturing tools.

Abstract: A method of forming an interlayer conductor structure. The method includes forming a stack of semiconductor pads coupled to respective active layers for a circuit. The semiconductor pads include outside perimeters each having one side coupled to a respective active layer. Impurities are implanted along the outside perimeters to form outside lower resistance regions on the pads. Openings are then formed in the stack of the semiconductor pads to expose a landing area for interlayer conductors on a corresponding semiconductor pad and to define an inside perimeter on at least one of the semiconductor pads. Inside lower resistance regions are formed along the inside perimeters by implanting impurities for interlayer conductor contacts and configured to overlap and be continuous with the corresponding outside lower resistance region.

Abstract: A circuit board device for fixing an electronic card, which is formed with at least one aperture, includes a circuit board and a securing member. The circuit board includes a board body formed with two through holes, and a socket connector provided on the board body for mating with the electronic card. The securing member includes a pressing plate for pressing against the electronic card, at least one engaging stud projecting from a bottom end of the pressing plate for engaging the aperture, and two resilient engaging arms provided respectively on left and right sides of the pressing plate. The engaging arms extend respectively through the through holes and engage releasably the board body.

Abstract: Disclosed is a fullerene derivative having a formula of F-Cy, wherein F is an open-cage fullerene, and Cy is a chalcogenyl group. The fullerene derivative can be applied to hydrogen storage material and an optoelectronic device such as an organic light emitting diode (OLED), a solar cell, or an organic thin film transistor (TFT).

Abstract: Disclosed is a p-type organic semiconductor material having the formula: Each Con is the same and consists of a conjugated oligomer. Each EW is the same and consists of an electron withdrawing group. The p-type organic semiconductor material can be applied in an active layer of an optoelectronic device, such as an organic solar cell, an organic light-emitting diode, or an organic thin-film transistor.