Abstract: A method and apparatus of prediction for video coding are disclosed. According to one method, a block is partitioned into a first and second regions using a target partition selected from a partition set comprising triangle partition. A Merge candidate list is determined for a partitioned current block by including at least one HMVP (history-based motion vector prediction) candidate from an HMVP buffer, where the HMVP buffer stores motion information of previously coded blocks. The partitioned current block or current motion information associated with the partitioned current block are encoded or decoded using the Merge candidate list, where the Merge candidate list is used to derive a first candidate for the first region and a second candidate for the second region. In another method, whether to apply triangular CIIP (combined Inter/Intra prediction) to the current block is signaled at an encoder side or parsed at a decoder side.

Abstract: A monitor wafer is provided. The monitor wafer includes a substrate and a cleaning layer. The cleaning layer is disposed on a bottom surface of the substrate. The cleaning layer is configured to remove particles from the substrate and/or a processing tool.

Abstract: A chiller system provides cooling for a semiconductor fabrication facility. The chiller system includes a control system. The control system utilizes one or more analysis models trained with a machine learning process to intelligently assist in reducing the power consumption and enhancing the efficiency of the chiller system.

Abstract: A semiconductor device includes a first transistor located in a first region of a substrate and a second transistor located in a second region of the substrate. The first transistor includes first channel members vertically stacked above the substrate and a first gate structure wrapping around each of the first channel members. The first gate structure includes a first interfacial layer. The second transistor includes second channel members vertically stacked above the substrate and a second gate structure wrapping around each of the second channel members. The second gate structure includes a second interfacial layer. The second interfacial layer has a first sub-layer and a second sub-layer over the first sub-layer. The first and second sub-layers include different material compositions. A total thickness of the first and second sub-layers is larger than a thickness of the first interfacial layer.

Abstract: A transient voltage suppression device includes at least one N-type lightly-doped structure, a first P-type well, a second P-type well, a first N-type heavily-doped area, and a second N-type heavily-doped area. The first P-type well and the second P-type well are formed in the N-type lightly-doped structure. The first N-type heavily-doped area and the second N-type heavily-doped area are respectively formed in the first P-type well and the second P-type well. The doping concentration of the first P-type well is higher than that of the second P-type well. The first P-type well and the second P-type well can be replaced with P-type lightly-doped wells respectively having P-type heavily-doped areas under the N-type heavily-doped areas.

Abstract: A method for preparing a carbide protective layer comprises: (A) mixing a carbide powder, an organic binder, an organic solvent and a sintering aid to form a slurry; (B) spraying the slurry on a surface of a graphite component to form a composite component; (C) subjecting the composite component to a cold isostatic pressing densification process; (D) subjecting the composite component to a constant temperature heat treatment; (E) repeating steps (B)-(D) until a coating is formed on a surface of the composite component; (F) subjecting the coating to a segmented sintering process; (G) obtaining a carbide protective layer used for the surface of the composite component. Accordingly, while the carbide protective layer can be completed by using the wet cold isostatic pressing densification process and the cyclic multiple superimposition method, so that it can improve the corrosion resistance in the silicon carbide crystal growth process environment.

Abstract: A dummy gate electrode and a dummy gate dielectric are removed to form a recess between adjacent gate spacers. A gate dielectric is deposited in the recess, and a barrier layer is deposited over the gate dielectric. A first work function layer is deposited over the barrier layer. A first anti-reaction layer is formed over the first work function layer, the first anti-reaction layer reducing oxidation of the first work function layer. A fill material is deposited over the first anti-reaction layer.

Abstract: An amplifier circuit includes a first amplifier and a second amplifier. The first amplifier receives a first signal and generates a first amplification signal accordingly. The second amplifier receives a second signal and generates a second amplification signal accordingly. The first signal is related to a first frequency band, and the second signal is related to a second frequency band different from the first frequency band. When one of the first amplifier and the second amplifier is in use, the other one of the first amplifier and the second amplifier is unused. The first amplifier and second amplifier are coupled to a reference voltage terminal through a common node. The first amplifier includes a switch coupled between the common node and a stage of the first amplifier, and the switch can be controlled for reducing the loading effect caused by the first amplifier on the second amplifier.

Abstract: A transistor includes a gate structure that has a first gate dielectric layer and a second gate dielectric layer. The first gate dielectric layer is disposed over the substrate. The first gate dielectric layer contains a first type of dielectric material that has a first dielectric constant. The second gate dielectric layer is disposed over the first gate dielectric layer. The second gate dielectric layer contains a second type of dielectric material that has a second dielectric constant. The second dielectric constant is greater than the first dielectric constant. The first dielectric constant and the second dielectric constant are each greater than a dielectric constant of silicon oxide.

Abstract: The present disclosure provides an integrated circuit (IC) structure. The IC structure includes a semiconductor substrate; an interconnection structure formed on the semiconductor substrate; and a redistribution layer (RDL) metallic feature formed on the interconnection structure. The RDL metallic feature further includes a barrier layer disposed on the interconnection structure; a diffusion layer disposed on the barrier layer, wherein the diffusion layer includes metal and oxygen; and a metallic layer disposed on the diffusion layer.

Abstract: A heat dissipation device is provided and includes: a first vapor chamber having a first chamber and two first openings; and a second vapor chamber disposed on the first vapor chamber and having a second chamber, two bending portions and a middle portion. The two bending portions are inserted into the two first openings respectively to connect the first vapor chamber, such that the second chamber is in communication with the first chamber.

Abstract: Aspects of the disclosure provide a frame processor for processing frames with aliasing artifacts. For example, the frame processor can include a super-resolution (SR) and anti-aliasing (AA) engine and an attention reference frame generator coupled to the SR and AA engine. The SR and AA engine can be configured to enhance resolution and remove aliasing artifacts of a frame to generate a first high-resolution frame with aliasing artifacts and a second high-resolution frame with aliasing artifacts removed. The attention reference frame generator can be configured to generate an attention reference frame based on the first high-resolution frame and the second high-resolution frame.

Abstract: An evaporating concave-convex platform structure of a vapor chamber and a manufacturing method thereof, the structure include a lower plate and an upper plate. The lower plate includes a main plate member and a concave-convex member. The main plate member has a chamber portion dented from one surface thereof and a frame edge surrounding a periphery of the chamber portion. The upper plate is stacked on the lower plate facing a dented surface of the chamber portion. The concave-convex member has a concave-convex surface disposed protrusively from the chamber portion of the lower plate or disposed concavely toward the chamber portion. A connecting portion is disposed to surrounds a periphery of the concave-convex surface. The connecting portion is stacked on the main plate member through the concave-convex surface. The connecting portion is welded to the main plate member.

Abstract: A connecting structure includes a vapor chamber, a heat pipe and a working fluid. The vapor chamber includes a half shell seat, a half shell cover and a first wick structure. The half shell cover is sealed with the half shell seat and a chamber is defined therebetween. The half shell cover has a through hole and an annular wall. The first wick structure is laid on an inner surface of the half shell cover and extended into the annular wall. The heat pipe includes a tube body and a second wick structure. The tube body has an opening and a flange. The heat pipe is upright connected to an outer periphery of the annular wall by the opening. The flange is closely attached to an outer surface of the half shell cover. The second wick structure contacts the first wick structure. The working fluid is disposed in the chamber.

Abstract: A transient voltage suppression device includes at least one P-type lightly-doped structure and at least one electrostatic discharge structure. The electrostatic discharge structure includes an N-type lightly-doped well, an N-type well, a first P-type heavily-doped area, and a first N-type heavily-doped area. The N-type lightly-doped well is formed in the P-type lightly-doped structure. The N-type well is formed in the N-type lightly-doped well. The doping concentration of the N-type lightly-doped well is less than that of the N-type well. The first P-type heavily-doped area is formed in the N-type well. The first N-type heavily-doped area is formed in the P-type lightly-doped structure.

Abstract: An optical detector module can be used to implement proximity sensing function by detecting ambient light outside of the optical detector module in accordance with a first detection threshold. An optical detector module can be further used to implement other active functions such as material detection (e.g., skin) or depth-sensing by emitting one or more optical signals (e.g., light pulses at a specific wavelength) and detecting the reflected optical signals relative to a second and/or third detection threshold. The disclosure provides technical solutions for actively monitoring detection threshold(s) of an optical detector module to achieve better power management. In some embodiments, such solutions are useful for photodetectors having a wide sensing bandwidth, such as a photodetector formed in germanium or a photodetector comprising an absorption region comprising germanium.

Abstract: An aiming system includes a positioner, an aiming device, and a processor. The positioner has a function of acquiring spatial information, and the aiming device is connected to the positioner, and the processor is connected to the positioner or the aiming device. A method of using the aiming system is also provided. Surgical guidance is more intuitive by directly combining the positioner with the aiming device.

Abstract: A surgical power drill system includes a housing unit, a driving unit, a tool holder, and a screw member. The driving unit is movably mounted in the housing unit and includes a motor and a motor shaft coupled to the motor. The driving unit is movable relative to the housing unit between a distal position, where the driving unit is distal from a front end of the housing unit, and a proximate position, where the driving unit is proximate to the front end of the housing unit. The tool holder is coupled to a first end portion of the motor shaft. The screw member is coupled to a second end portion of the motor shaft.

Abstract: A transient voltage suppression device includes at least one P-type lightly-doped structure and at least one electrostatic discharge structure. The electrostatic discharge structure includes an N-type lightly-doped well, an N-type well, a first P-type heavily-doped area, and a first N-type heavily-doped area. The N-type lightly-doped well is formed in the P-type lightly-doped structure. The N-type well is formed in the N-type lightly-doped well. The doping concentration of the N-type lightly-doped well is less than that of the N-type well. The first P-type heavily-doped area is formed in the N-type well. The first N-type heavily-doped area is formed in the P-type lightly-doped structure.

Abstract: A gas sensing method and a gas sensing system are provided. The gas sensing method includes using a gas sensing device to sense a target gas, the gas sensing device having a self-heating region capable of producing a change in resistance in response to the target gas being sensed by the gas sensing device, and controlling a change in supply of current or voltage to the gas sensing device according to the change in resistance, so that the gas sensing device is substantially maintained operating at a predetermined temperature for sensing the target gas.