Abstract: An extreme ultraviolet mask including a substrate, a reflective multilayer stack on the substrate and patterned absorber layer on the reflective multilayer stack is provided with a pellicle membrane frame attached to the substrate. In some embodiments, the pellicle membrane frame is attached to the substrate using an adhesive between the pellicle membrane frame and the substrate. In some embodiments, the pellicle membrane frame is located in a trench formed in the reflective multilayer stack and patterned absorber layer. In other embodiments, the pellicle membrane frame not located in a trench formed in the reflective multilayer stack and patterned absorber layer.

Abstract: A cleaning apparatus for cleaning a surface of a photomask includes a housing defining a chamber, a photomask holder disposed within the chamber, and a gas dispenser disposed within the chamber to direct gas toward the photomask holder. The gas dispenser has two or more gas dispensing outlets. A driver is coupled to at least one of the photomask holder or the gas dispenser to establish relative movement between the photomask holder and the gas dispenser.

Abstract: The present disclosure provides a method for removing particles. The method includes: receiving a pellicle including a pellicle membrane, wherein a particle is disposed on the pellicle membrane; passing a light beam through an object lens, wherein the light beam is focused on a focal region in front of the pellicle membrane by the object lens, and the particle is attracted to be trapped at the focal region; and removing the particle from the pellicle membrane at the focal region.

Abstract: A tin (Sn) auto-filling device and system provided to provide new liquid Sn to an inner sidewall surface of a rotation crucible. A laser is exposed to the liquid Sn at the inner sidewall surface of the rotation crucible to generate extreme-ultraviolet-light (EUV) that is utilized to process workpieces within a semiconductor manufacturing plant (FAB). The auto-filling device automatically refills as the liquid Sn at the inner sidewall surface of the rotation crucible is consumed due to the liquid Sn at the inner sidewall surface of the rotation crucible being exposed to the laser.

Abstract: A method is provided. The method includes detaching an upper shell of a reticle pod from a base. The method further includes while the upper shell is detached from the base, blocking an inlet flow of gas from entering an interior of the reticle pod between the upper shell and the base with a use of a fluid regulating module which is in a sealed state. In the sealed state of the fluid regulating module, an opening of the fluid regulating module is covered with a sealing film. The method also includes removing a reticle positioned on the base to a process tool. In addition, the method includes performing a lithography operation in the process tool with the use of the reticle.

Abstract: A laser produced plasma (LPP)-extreme ultraviolet (EUV) light source includes a vacuum chamber, a rotatable crucible disposed in the vacuum chamber with an annular inner surface for carrying a liquid metal, and a laser arranged to apply laser light to the liquid metal carried on the annular inner surface of the rotatable crucible to cause the liquid metal to emit EUV light. The LPP-EUV light source further includes a stationary component disposed in the vacuum chamber and positioned proximate to the annular inner surface of the rotatable crucible or surrounding the rotatable crucible, a coolant fluid delivery inlet or nozzle, and a cooling element secured with the stationary component and including a feature configured to operatively couple with coolant fluid delivered by the coolant fluid delivery inlet or nozzle.

Abstract: In pellicle cleaning, a gas is flowed on a pellicle using at least one gas nozzle. During the flowing, the pellicle is moved respective to the at least one gas nozzle. During the flowing, the pellicle is exposed to ionized gas generated by at least one alpha ionizer. Also during the flowing, an ultrasonic wave is applied to the pellicle using an ultrasound transducer or transducer array. The gas nozzle may have a nozzle aperture comprising a slit or a linear array of apertures arranged parallel with a pellicle membrane of the pellicle.

Abstract: A photomask cleaning tool includes various components to automatically remove a particle from a pellicle, such as a multi-jet nozzle to standardize and control the use of a gas to remove the particle, an ultrasonic probe to loosen the particle from the surface of the pellicle, a plurality of multi-jet nozzles to direct gas toward the particle from different directions, a control system to control the automated blower for various sizes and shapes of photomasks and for optimized particle removal techniques, and/or the like. In this way, the photomask cleaning tool is capable of removing a particle from a pellicle of a photomask in a manner that increases the effectiveness of removing the particle and reduces the likelihood of damage to the pellicle, which would otherwise result in expensive and time-consuming photomask rework.

Abstract: A method for cleaning a reflective photomask, a method of manufacturing a semiconductor structure, and a system for forming a semiconductor structure are provided. The method for cleaning a reflective photomask includes placing a photomask in a first chamber, and performing a dry cleaning operation on the photomask in the first chamber, wherein the dry cleaning operation includes providing hydrogen radicals to the first chamber, generating hydrocarbon gases as a result of reactions of the hydrogen radicals, and removing the hydrocarbon gases from the first chamber.

Abstract: Pellicles are inspected by projecting a light pattern thereon and monitoring the reflected light by CCD module or the like. Software-based inspection of the reflected pattern recognizes any distortions in the pattern or contamination, and thus identifies wrinkles or other defects in the pellicle prior to use in the manufacturing process. Recognition of defects and replacement will avoid instances of pellicle rupture thereby avoiding damage to wafers being patterned.

Abstract: A cleaning apparatus for cleaning a surface of a photomask includes a housing defining a chamber, a photomask holder disposed within the chamber, and a gas dispenser disposed within the chamber to direct gas toward the photomask holder. The gas dispenser has two or more gas dispensing outlets. A driver is coupled to at least one of the photomask holder or the gas dispenser to establish relative movement between the photomask holder and the gas dispenser.

Abstract: A dis-pellicle tool or pellicle removal tool that includes one or more clamp structures that each include a respective group of pins. The respective pins of the groups of pins of the one or more clamp structures are configured to, in operation, be inserted into holes that are present within a pellicle frame of a pellicle. Once the respective pins of the groups of pins are inserted into the holes of the pellicle frame, a removal force may be applied to the pellicle frame to remove the pellicle from a photomask to which the pellicle is coupled to by an adhesive, glue, or some other similar type of coupling material.

Abstract: A method for cleaning a reflective photomask, a method of manufacturing a semiconductor structure, and a system for forming a semiconductor structure are provided. The system for forming a semiconductor structure includes a photomask comprises a photomask substrate and a pellicle; an exposure tool configured to perform an exposure operation to transfer a pattern of the photomask to a semiconductive substrate, and a cleaning tool configured to perform a cleaning operation on the photomask. The cleaning tool includes a processing chamber configured to accommodate the photomask for a cleaning operation, and a hydrogen radical producer configured to produce hydrogen radicals into the processing chamber and having the hydrogen radicals reacting with contaminants attached on the photomask. The pellicle is attached on the photomask substrate during the cleaning operation.

Abstract: One or more embodiments of the present disclosure describe an artificial intelligence assisted substrate defect repair apparatus and method. The AI assisted defect repair apparatus employs an object detection algorithm. Based on the plurality of images taken by detectors located at different respective positions, the detectors capture various views of an object including a defect. The composition information as well as the morphology information (e.g., shape, size, location, height, depth, width, length, or the like) of the defect and the object are obtained based on the plurality of images. The object detection algorithm analyzes the images and determines the type of defect and the recommends a material (e.g., etching gas) and the associated information (e.g., supply time of the etching gas, flow rate of the etching gas, etc.) for fixing the defect.

Abstract: An EUV radiation source apparatus includes an EUV source vessel; a tin layer disposed in the EUV source vessel; a chamber disposed adjacent to the EUV source vessel; and a first filter disposed in the chamber, wherein the first filter includes a membrane and a mesh disposed on the membrane, and the membrane and the mesh are integrally formed. A method for generating EUV radiation includes: forming a first filter including a membrane and a mesh integrally formed with the membrane; disposing the first filter in a chamber adjacent to an EUV source vessel; and collecting fuel debris on the first filter in the chamber.

Abstract: An EUV radiation source apparatus includes an EUV source vessel including a chamber; a crucible disposed in the chamber; a tin layer disposed on the crucible; a catcher disposed in the chamber and configured to collect fuel debris generated from a collision of the tin layer and a laser beam; a heat dissipation structure disposed over the catcher; and a venting system coupled to the EUV source vessel and communicable with the chamber. A method for generating EUV radiation includes: collecting fuel debris on a catcher disposed in a chamber of an EUV source vessel; dissipating heat from the catcher to the chamber; and venting a gas out of the EUV source vessel to cool the chamber to a decreased temperature through an opening disposed on the EUV source vessel.

Abstract: An inspection apparatus includes: an inspection apparatus includes: a stage configured to receive a photomask; a radiation source configured to emit a first radiation beam for inspecting the photomask; and an aperture stop configured to receive a second radiation beam reflected from the photomask through an aperture of the aperture stop, wherein the aperture is tangent at a center of the aperture stop.

Abstract: A multi-host system and an operation sharing method are provided. In the method, whether operating information of a human-machine interface device being conformed with a switching condition is determined through a first software. When the operating information is conformed with the switching condition, operating the screen displayed by the second display according to the operating information of the human-machine interface device through a first host device or a second host device. Accordingly, interaction convenience and flexibility between multiple host devices are improved.

Abstract: A photomask cleaning tool includes various components to automatically remove a particle from a pellicle, such as a multi-jet nozzle to standardize and control the use of a gas to remove the particle, an ultrasonic probe to loosen the particle from the surface of the pellicle, a plurality of multi-jet nozzles to direct gas toward the particle from different directions, a control system to control the automated blower for various sizes and shapes of photomasks and for optimized particle removal techniques, and/or the like. In this way, the photomask cleaning tool is capable of removing a particle from a pellicle of a photomask in a manner that increases the effectiveness of removing the particle and reduces the likelihood of damage to the pellicle, which would otherwise result in expensive and time-consuming photomask rework.

Abstract: A method for fabricating a semiconductor structure, including disposing a mask at a first position in a first chamber, generating a first plurality of ions toward the mask by an ionizer, forming a photoresist layer on a substrate, receiving the substrate in the first chamber, and exposing the photoresist layer with actinic radiation through the mask in the first chamber.