Abstract: A medium voltage transistor of a level shifter circuit may include a p-well region in a substrate. Moreover, the medium voltage transistor may include an n-type lightly-doped source/drain (NLDD) region in which an N+ source/drain region of the medium voltage transistor is included. The light doping in the NLDD region enables a threshold voltage (Vi) to be reduced while enabling medium voltage operation at the N+ source/drain region. To reduce the amount of current leakage in the medium voltage transistor due to the light doping in the NLDD region, a buffer layer may be included over and/or on a portion of the NLDD region under a gate structure of the medium voltage transistor. The NLDD region and the thermal region of the medium voltage transistor enables the threshold voltage of the medium voltage transistor while maintaining the same current leakage performance or reducing current leakage in the medium voltage transistor.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a first doped region in a substrate and comprising a first doping type. A gate structure is over the first doped region. A pair of contact regions are in the substrate on opposing sides of the gate structure and comprising the first doping type. The first doped region continuously laterally extends between the pair of contact regions and contacts the pair of contact regions. A second doped region is in the substrate and along a bottom of the first doped region. The second doped region comprises a second doping type opposite the first doping type.

Abstract: Transistors with improved saturation drain current and methods for making such transistors are disclosed. The gate is formed in the shape of a longitudinal trench and a plurality of lateral trenches below the longitudinal trench. The resulting dual-recess structure increases the surface area of the gate, which permits additional charge carriers and increases the saturation drain current of the transistor. Such transistors can be useful in high voltage and medium voltage applications such as in display driver integrated circuits.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming a varactor comprising a reduced surface field (RESURF) region. The method includes forming a drift region having a first doping type within a substrate. A RESURF region having a second doping type is formed within the substrate such that the RESURF region is below the drift region. A gate structure is formed on the substrate. A pair of contact regions is formed within the substrate on opposing sides of the gate structure. The contact regions respectively abut the drift region and have the first doping type, and wherein the first doping type is opposite the second doping type.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a field plate, a gate electrode, and a first dielectric layer. The substrate has a top surface. The substrate includes a first drift region with a first conductivity type extending from the top surface of the substrate into the substrate, and includes a second drill region with the first conductivity type extending from the top surface of the substrate into the substrate and adjacent to the first drift region. The field plate is over the substrate. The gate electrode has a first portion and a second portion, wherein the first portion of the gate electrode is located over the field plate. The first dielectric layer is between the substrate and the field plate. The first portion of the gate electrode is overlapping with a boundary of the first drift region and the second drift region in the substrate.

Abstract: A semiconductor device includes a semiconductor substrate, a gate dielectric, a gate electrode, and a pair of source/drain regions. The gate dielectric is disposed in the semiconductor substrate having an upper boundary lower than an upper surface of the semiconductor substrate, and an upper surface flush with the upper surface of the semiconductor substrate. The gate electrode is disposed over the gate dielectric having a first section over the upper boundary of the gate dielectric and a second section over the upper surface of the gate dielectric. The second section partially covers and partially exposes the upper surface of the gate dielectric. The pair of source/drain regions are disposed on opposing sides of the gate dielectric.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a field plate, a gate electrode, and a first dielectric layer. The substrate has a top surface. The substrate includes a first drift region with a first conductivity type extending from the top surface of the substrate into the substrate, and includes a second drill region with the first conductivity type extending from the top surface of the substrate into the substrate and adjacent to the first drift region. The field plate is over the substrate. The gate electrode has a first portion and a second portion, wherein the first portion of the gate electrode is located over the field plate. The first dielectric layer is between the substrate and the field plate. The first portion of the gate electrode is overlapping with a boundary of the first drift region and the second drift region in the substrate.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming a varactor comprising a reduced surface field (RESURF) region. The method includes forming a drift region having a first doping type within a substrate. A RESURF region having a second doping type is formed within the substrate such that the RESURF region is below the drift region. A gate structure is formed on the substrate. A pair of contact regions is formed within the substrate on opposing sides of the gate structure. The contact regions respectively abut the drift region and have the first doping type, and wherein the first doping type is opposite the second doping type.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a source region, a drain region, a filed plate and a gate electrode. The source region is of a first conductivity type located at a first side within the substrate. The drain region is of the first conductive type located at a second side within the substrate opposite to the first side. The field plate is located over the substrate and between the source region and the drain region. A portion of the gate electrode is located over the field plate.

Abstract: A semiconductor device includes a semiconductor substrate, a gate dielectric, a gate electrode, and a pair of source/drain regions. The gate dielectric is disposed in the semiconductor substrate having an upper boundary lower than an upper surface of the semiconductor substrate, and an upper surface flush with the upper surface of the semiconductor substrate. The gate electrode is disposed over the gate dielectric having a first section over the upper boundary of the gate dielectric and a second section over the upper surface of the gate dielectric. The second section partially covers and partially exposes the upper surface of the gate dielectric. The pair of source/drain regions are disposed on opposing sides of the gate dielectric.

Abstract: Various embodiments of the present disclosure are directed towards a varactor comprising a reduced surface field (RESURF) region. In some embodiments, the varactor includes a drift region, a gate structure, a pair of contact regions, and a RESURF region. The drift region is within a substrate and has a first doping type. The gate structure overlies the drift region. The contact regions are within the substrate and overlie the drift region. Further, the contact regions have the first doping type. The gate structure is laterally sandwiched between the contact regions. The RESURF region is in the substrate, below the drift region, and has a second doping type. The second doping type is opposite the first doping type. The RESURF region aids in depleting the drift region under the gate structure, which decreases the minimum capacitance of the varactor and increases the tuning range of the varactor.

Abstract: A semiconductor device includes a semiconductor substrate, a gate dielectric, a gate electrode, a pair of source/drain regions, a pair of first well regions, a second well region, a pair of contact regions and a pair of third well regions. The gate dielectric is disposed in the semiconductor substrate having a concave profile that defines an upper boundary lower than an upper surface of the semiconductor substrate. The gate electrode is disposed over the gate dielectric. The pair of source/drain regions are disposed on opposing sides of the gate dielectric. The pair of first well regions are disposed under the pair of source/drain regions. The second well region is disposed between the pair of first well regions. The pair of contact regions are disposed on opposing sides of the pair of source/drain regions. The pair of third well regions are disposed under the pair of contact regions.

Abstract: A semiconductor device includes a semiconductor substrate, a gate dielectric, a gate electrode, a pair of source/drain regions, a pair of first well regions, a second well region, a pair of contact regions and a pair of third well regions. The gate dielectric is disposed in the semiconductor substrate having a concave profile that defines an upper boundary lower than an upper surface of the semiconductor substrate. The gate electrode is disposed over the gate dielectric. The pair of source/drain regions are disposed on opposing sides of the gate dielectric. The pair of first well regions are disposed under the pair of source/drain regions. The second well region is disposed between the pair of first well regions. The pair of contact regions are disposed on opposing sides of the pair of source/drain regions. The pair of third well regions are disposed under the pair of contact regions.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a source region, a drain region, a filed plate and a gate electrode. The source region is of a first conductivity type located at a first side within the substrate. The drain region is of the first conductive type located at a second side within the substrate opposite to the first side. The field plate is located over the substrate and between the source region and the drain region. A portion of the gate electrode is located over the field plate.

Abstract: A semiconductor device includes a semiconductor substrate, a gate dielectric, a gate electrode and a pair of source/drain regions. The gate dielectric is disposed in the semiconductor substrate having a concave profile that defines an upper boundary lower than an upper surface of the semiconductor substrate. The gate electrode is disposed over the gate dielectric. The pair of source/drain regions are disposed on opposing sides of the gate dielectric.

Abstract: A semiconductor device and the method of manufacturing the same are provided. The semiconductor device comprises a substrate, a source region, a drain region, a filed plate and a gate electrode. The source region is of a first conductivity type located at a first side within the substrate. The drain region is of the first conductive type located at a second side within the substrate opposite to the first side. The field plate is located over the substrate and between the source region and the drain region. A portion of the gate electrode is located over the field plate.

Abstract: Various embodiments of the present disclosure are directed towards a varactor comprising a reduced surface field (RESURF) region. In some embodiments, the varactor includes a drift region, a gate structure, a pair of contact regions, and a RESURF region. The drift region is within a substrate and has a first doping type. The gate structure overlies the drift region. The contact regions are within the substrate and overlie the drift region. Further, the contact regions have the first doping type. The gate structure is laterally sandwiched between the contact regions. The RESURF region is in the substrate, below the drift region, and has a second doping type. The second doping type is opposite the first doping type. The RESURF region aids in depleting the drift region under the gate structure, which decreases the minimum capacitance of the varactor and increases the tuning range of the varactor.

Abstract: A semiconductor device includes a semiconductor substrate, a gate dielectric, a gate electrode and a pair of source/drain regions. The gate dielectric is disposed in the semiconductor substrate having a concave profile that defines an upper boundary lower than an upper surface of the semiconductor substrate. The gate electrode is disposed over the gate dielectric. The pair of source/drain regions are disposed on opposing sides of the gate dielectric.

Abstract: A semiconductor device and the method of manufacturing the same are provided. The semiconductor device comprises a substrate, a source region, a drain region, a filed plate and a gate electrode. The source region is of a first conductivity type located at a first side within the substrate. The drain region is of the first conductive type located at a second side within the substrate opposite to the first side. The field plate is located over the substrate and between the source region and the drain region. A portion of the gate electrode is located over the field plate.

Abstract: A method of fabricating a semiconductor structure includes forming an isolation feature in a substrate, removing a portion of the isolation feature and a portion of the substrate underneath the removed portion of the isolation feature to form a trench in the substrate, and forming a trapping feature around a bottom portion of the trench. A first sidewall and a second sidewall of the trench are in direct contact with the isolation feature, and a bottom surface of the trench is below a bottom surface of the isolation feature.