Abstract: A semiconductor structure includes a substrate, a first power device and a second power device in the substrate, at least one isolation feature between the first and second power device, and a trapping feature adjoining the at least one isolation feature in the substrate.

Abstract: A semiconductor device provides a high breakdown voltage and a low turn-on resistance. The device includes: a substrate; a buried n+ layer disposed in the substrate; an n-epi layer disposed over the buried n+ layer; a p-well disposed in the n-epi layer; a source n+ region disposed in the p-well and connected to a source contact on one side; a first insulation layer disposed on top of the p-well and the n-epi layer; a gate disposed on top of the first insulation layer; and a metal electrode extending from the buried n+ layer to a drain contact, wherein the metal electrode is insulated from the n-epi layer and the p-well using by a second insulation layer.

Abstract: The invention provides a method of repairing the pixel structure, and the method includes the following. First, an electrical connection between the current control unit and the power line is cut. The power line is then electrically connected to the redundant active device, so that the current control unit and the redundant active device control the current provided by the power line. The invention provides a method of repairing the organic electro-luminescence display unit, suitable for repairing the above-mentioned organic electro-luminescence display unit, and the method includes the following. First, an electrical connection between the current control unit and the power line is cut. The power line is electrically connected to the redundant active device, so that the current control unit and the redundant active device control the current passing through the organic electro-luminescence layer.

Abstract: An integrated circuit device and method for fabricating the integrated circuit device is disclosed. In an embodiment, an apparatus includes a substrate having a first surface and a second surface, the second surface being opposite the first surface; a first device and a second device overlying the substrate; and an isolation structure that extends through the substrate from the first surface to the second surface and between the first device and the second device.

Abstract: A semiconductor device is provided that, in an embodiment, is in the form of a high voltage MOS (HVMOS) device. The device includes a semiconductor substrate and a gate structure formed on the semiconductor substrate. The gate structure includes a gate dielectric which has a first portion with a first thickness and a second portion with a second thickness. The second thickness is greater than the first thickness. A gate electrode is disposed on the first and second portion. In an embodiment, a drift region underlies the second portion of the gate dielectric. A method of fabricating the same is also provided.

Abstract: A high voltage (HV) device includes a well region of a first dopant type disposed in a substrate. A first well region of a second dopant type is disposed in the well region of the first dopant type. An isolation structure is at least partially disposed in the well region of the first dopant type. A first gate electrode is disposed over the isolation structure and the first well region of the second dopant type. A second well region of the second dopant type is disposed in the well region of the first dopant type. The second well region of the second dopant type is spaced from the first well region of the second dopant type. A second gate electrode is disposed between and over the first well region of the second dopant type and the second well region of the second dopant type.

Abstract: A high voltage (HV) device includes a gate dielectric structure over a substrate. The gate dielectric structure has a first portion and a second portion. The first portion has a first thickness and is over a first well region of a first dopant type in the substrate. The second portion has a second thickness and is over a second well region of a second dopant type. The first thickness is larger than the second thickness. A gate electrode is disposed over the gate dielectric structure. A metallic layer is over and coupled with the gate electrode. The metallic layer extends along a direction of a channel under the gate dielectric structure. At least one source/drain (S/D) region is disposed within the first well region of the first dopant type.

Abstract: The present disclosure provides an apparatus and method for fabricating a semiconductor gate. The apparatus includes, a substrate having an active region and a dielectric region that forms an interface with the active region; a gate electrode located above a portion of the active region and a portion of the dielectric region; and a dielectric material disposed within the gate electrode, the dielectric material being disposed near the interface between the active region and the dielectric region. The method includes, providing a substrate having an active region and a dielectric region that forms an interface with the active region; forming a gate electrode over the substrate, the gate electrode having an opening near a region of the gate electrode that is above the interface; and filling the opening with a dielectric material.

Abstract: A semiconductor device provides a high breakdown voltage and a low turn-on resistance. The device includes: a substrate; a buried n+ layer disposed in the substrate; an n-epi layer disposed over the buried n+ layer; a p-well disposed in the n-epi layer; a source n+ region disposed in the p-well and connected to a source contact on one side; a first insulation layer disposed on top of the p-well and the n-epi layer; a gate disposed on top of the first insulation layer; and a metal electrode extending from the buried n+ layer to a drain contact, wherein the metal electrode is insulated from the n-epi layer and the p-well using by a second insulation layer.

Abstract: The invention provides a method of repairing the pixel structure, and the method includes the following. First, an electrical connection between the current control unit and the power line is cut. The power line is then electrically connected to the redundant active device, so that the current control unit and the redundant active device control the current provided by the power line. The invention provides a method of repairing the organic electro-luminescence display unit, suitable for repairing the above-mentioned organic electro-luminescence display unit, and the method includes the following. First, an electrical connection between the current control unit and the power line is cut. The power line is electrically connected to the redundant active device, so that the current control unit and the redundant active device control the current passing through the organic electro-luminescence layer.

Abstract: A pixel structure electrically connected to a scan line, a data line and a power line is provided. The pixel structure includes a current control unit, a pixel electrode and a redundant active device. The current control unit is electrically connected to the scan line, the data line and the power line. The pixel electrode is electrically connected to the current control unit. The redundant active device is electrically connected to the pixel electrode and the current control unit, and the redundant active device is electrically insulated from the power line. Moreover, an organic electro-luminescence displaying unit and a repairing method thereof are further provided.

Abstract: A pixel structure electrically connected to a scan line, a data line and a power line is provided. The pixel structure includes a current control unit, a pixel electrode and a redundant active device. The current control unit is electrically connected to the scan line, the data line and the power line. The pixel electrode is electrically connected to the current control unit. The redundant active device is electrically connected to the pixel electrode and the current control unit, and the redundant active device is electrically insulated from the power line. Moreover, an organic electro-luminescence displaying unit and a repairing method thereof are further provided.