Abstract: Present embodiments provide for a mobile device and an optical imaging lens thereof. The optical imaging lens comprises five lens elements positioned sequentially from an object side to an image side. Through controlling the convex or concave shape of the surfaces and/or the refracting power of the lens elements and designing an equation, the optical imaging lens shows better optical characteristics and the total length of the optical imaging lens is shortened.

Abstract: An integrated circuit includes a semiconductor substrate, a gate dielectric over the substrate, a metal gate structure over the semiconductor substrate and the gate dielectric, a dielectric film on the metal gate structure, the dielectric film comprising oxynitride combined with metal from the metal gate, and an interlayer dielectric (ILD) on either side of the metal gate structure.

Abstract: A method of making an integrated circuit includes providing a semiconductor substrate and forming a gate dielectric over the substrate, such as a high-k dielectric. A metal gate structure is formed over the semiconductor substrate and the gate dielectric and a thin dielectric film is formed over that. The thin dielectric film includes oxynitride combined with metal from the metal gate. The method further includes providing an interlayer dielectric (ILD) on either side of the metal gate structure.

Abstract: An embodiment of a feed-forward method of determining a photomask pattern is provided. The method includes providing design data associated with an integrated circuit device. A thickness of a coating layer to be used in fabricating the integrated circuit device is predicted based on the design data. This prediction is used to generate a gradating pattern. A photomask is formed having the gradating pattern.

Abstract: A method for etching an ultra thin film is provided which includes providing a substrate having the ultra thin film formed thereon, patterning a photosensitive layer formed over the ultra thin film, etching the ultra thin film using the patterned photosensitive layer, and removing the patterned photosensitive layer. The etching process includes utilizing an etch material with a diffusion resistant carrier such that the etch material is prevented from diffusing to a region underneath the photosensitive layer and removing portions of the ultra thin film underneath the photosensitive layer.

Abstract: A method of fabricating a semiconductor device includes providing a substrate having a first surface, forming an isolation structure disposed partly in the substrate and having an second surface higher than the first surface by a step height, removing a portion of the isolation structure to form a recess therein having a bottom surface disposed below the first surface, and forming a contact engaging the gate structure over the recess. A different aspect involves an apparatus that includes a substrate having a first surface, an isolation structure disposed partly in the substrate and having a second surface higher than the first surface by a step height, a recess extending downwardly from the second surface, the recess having a bottom surface disposed below the first surface, a gate structure, and a contact engaging the gate structure over the recess.

Abstract: An intensity selective exposure photomask, also describes as a gradated photomask, is provided. The photomask includes a first region including a first array of sub-resolution features. The first region blocks a first percentage of the incident radiation. The photomask also includes a second region including a second array of sub-resolution features. The second region blocks a second percentage of the incident radiation different that the first percentage. Each of the features of the first and second array includes an opening disposed in an area of attenuating material.

Abstract: A method for etching an ultra thin film is provided which includes providing a substrate having the ultra thin film formed thereon, patterning a photosensitive layer formed over the ultra thin film, etching the ultra thin film using the patterned photosensitive layer, and removing the patterned photosensitive layer. The etching process includes utilizing an etch material with a diffusion resistant carrier such that the etch material is prevented from diffusing to a region underneath the photosensitive layer and removing portions of the ultra thin film underneath the photosensitive layer.

Abstract: A method of fabricating a semiconductor device includes providing a substrate having a first surface, forming an isolation structure disposed partly in the substrate and having an second surface higher than the first surface by a step height, removing a portion of the isolation structure to form a recess therein having a bottom surface disposed below the first surface, and forming a contact engaging the gate structure over the recess. A different aspect involves an apparatus that includes a substrate having a first surface, an isolation structure disposed partly in the substrate and having a second surface higher than the first surface by a step height, a recess extending downwardly from the second surface, the recess having a bottom surface disposed below the first surface, a gate structure, and a contact engaging the gate structure over the recess.

Abstract: A method of fabricating a semiconductor device includes providing a substrate having a first surface, forming an isolation structure disposed partly in the substrate and having an second surface higher than the first surface by a step height, removing a portion of the isolation structure to form a recess therein having a bottom surface disposed below the first surface, and forming a contact engaging the gate structure over the recess. A different aspect involves an apparatus that includes a substrate having a first surface, an isolation structure disposed partly in the substrate and having a second surface higher than the first surface by a step height, a recess extending downwardly from the second surface, the recess having a bottom surface disposed below the first surface, a gate structure, and a contact engaging the gate structure over the recess.

Abstract: An intensity selective exposure photomask, also describes as a gradated photomask, is provided. The photomask includes a first region including a first array of sub-resolution features. The first region blocks a first percentage of the incident radiation. The photomask also includes a second region including a second array of sub-resolution features. The second region blocks a second percentage of the incident radiation different that the first percentage.

Abstract: A method of making an integrated circuit includes providing a semiconductor substrate and forming a gate dielectric over the substrate, such as a high-k dielectric. A metal gate structure is formed over the semiconductor substrate and the gate dielectric and a thin dielectric film is formed over that. The thin dielectric film includes oxynitride combined with metal from the metal gate. The method further includes providing an interlayer dielectric (ILD) on either side of the metal gate structure.

Abstract: A hard mask layer and a developable bottom anti-reflective coating (dBARC) layer are formed over a dielectric layer of a substrate. A first photosensitive layer is formed above the dBARC layer, exposed, and developed to form a first pattern. The dBARC layer is developed. The first pattern is etched into the hard mask layer to form a first pattern of openings in the hard mask layer. Following removal of the first photosensitive layer, a second photosensitive layer is formed within the first pattern of openings. The second photosensitive layer is exposed and developed to form a second pattern. The dBARC layer is developed. The second pattern is etched into the hard mask layer to form a second pattern of openings in the hard mask layer. Following the removal of the second photosensitive layer and the dBARC layer, the first and the second patterns are etched into the dielectric layer.

Abstract: A method of fabricating a semiconductor device includes providing a substrate having a first surface, forming an isolation structure disposed partly in the substrate and having an second surface higher than the first surface by a step height, removing a portion of the isolation structure to form a recess therein having a bottom surface disposed below the first surface, and forming a contact engaging the gate structure over the recess. A different aspect involves an apparatus that includes a substrate having a first surface, an isolation structure disposed partly in the substrate and having a second surface higher than the first surface by a step height, a recess extending downwardly from the second surface, the recess having a bottom surface disposed below the first surface, a gate structure, and a contact engaging the gate structure over the recess.

Abstract: An intensity selective exposure photomask, also describes as a gradated photomask, is provided. The photomask includes a first region including a first array of sub-resolution features. The first region blocks a first percentage of the incident radiation. The photomask also includes a second region including a second array of sub-resolution features. The second region blocks a second percentage of the incident radiation different that the first percentage.

Abstract: An intensity selective exposure photomask, also describes as a gradated photomask, is provided. The photomask includes a first region including a first array of sub-resolution features. The first region blocks a first percentage of the incident radiation. The photomask also includes a second region including a second array of sub-resolution features. The second region blocks a second percentage of the incident radiation different that the first percentage. Each of the features of the first and second array includes an opening disposed in an area of attenuating material.

Abstract: A gradated photomask is provided. The photomask includes a first region including a first plurality of sub-resolution features and a second region including a second plurality of sub-resolution features. The first region blocks a first percentage of the incident radiation. The second region blocks a second percentage of the incident radiation. The first and second percentage are different. An intensity selective exposure method is also provided.

Abstract: A hard mask layer and a developable bottom anti-reflective coating (dBARC) layer are formed over a dielectric layer of a substrate. A first photosensitive layer is formed above the dBARC layer, exposed, and developed to form a first pattern. The dBARC layer is developed. The first pattern is etched into the hard mask layer to form a first pattern of openings in the hard mask layer. Following removal of the first photosensitive layer, a second photosensitive layer is formed within the first pattern of openings. The second photosensitive layer is exposed and developed to form a second pattern. The dBARC layer is developed. The second pattern is etched into the hard mask layer to form a second pattern of openings in the hard mask layer. Following the removal of the second photosensitive layer and the dBARC layer, the first and the second patterns are etched into the dielectric layer.

Abstract: A gradated photomask is provided. The photomask includes a first region including a first plurality of sub-resolution features and a second region including a second plurality of sub-resolution features. The first region blocks a first percentage of the incident radiation. The second region blocks a second percentage of the incident radiation. The first and second percentage are different. An intensity selective exposure method is also provided.

Abstract: A method for etching an ultra thin film is provided which includes providing a substrate having the ultra thin film formed thereon, patterning a photosensitive layer formed over the ultra thin film, etching the ultra thin film using the patterned photosensitive layer, and removing the patterned photosensitive layer. The etching process includes utilizing an etch material with a diffusion resistant carrier such that the etch material is prevented from diffusing to a region underneath the photosensitive layer and removing portions of the ultra thin film underneath the photosensitive layer.