Abstract: An optical member driving mechanism is provided. The optical member driving mechanism includes a first movable portion used for connecting an optical element, a fixed portion, a first driving assembly used for driving the first movable portion to rotate relative to the fixed portion, and a guiding assembly having a first intermediate element. The first movable portion is movable relative to the fixed portion. The guiding assembly is used for applying a first stabilized force to the first movable portion for making the first intermediate element be in contact with the first movable portion or the fixed portion. The first movable portion is rotatable relative to the fixed portion.

Abstract: A package including a first carrier, a seed layer, wires, a die and a molding material is provided. The first carrier is removed to expose the seed layer after disposing a second carrier on the molding material, then the seed layer is removed to expose the wires, and a gold layer is deposited on each of the wires by immersion gold plating, finally a semiconductor device is obtained. The gold layer is provided to protect the wires from oxidation and improve solder joint reliability.

Abstract: An integrated circuit includes a set of active regions, a first contact, a set of gates, a first and second conductive line and a first and second via. The set of active regions extends in a first direction, and is on a first level. The first contact extends in a second direction, is on a second level, and overlaps at least a first active region. The set of gates extends in the second direction, overlaps the set of active regions, and is on a third level. The first conductive line and the second conductive line extend in the first direction, overlap the first contact, and are on a fourth level. The first via electrically couples the first contact and the first conductive line together. The second via electrically couples the first contact and the second conductive line together.

Abstract: An optical element driving mechanism includes a movable assembly, a fixed assembly, and a driving assembly. The movable assembly is configured to be connected to an optical element. The movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly in a range of motion. The optical element driving mechanism further includes a positioning assembly configured to position the movable assembly at a predetermined position relative to the fixed assembly when the driving assembly is not operating.

Abstract: A system for notifying environmental pollution status includes wireless environment sensing devices and a portable wireless environmental pollution status notification device. The wireless environment sensing devices, respectively arranged in the different sensing locations of a physical environment, respectively store the sensing locations and respectively sense pollution related information corresponding to the different sensing locations to output the pollution related information and the sensing locations corresponding thereto. The portable wireless environmental pollution status notification device, wirelessly connected to the plurality of wireless environment sensing devices and located in the physical environment, receives the pollution related information and the sensing locations corresponding thereto and generates notification signals based on the pollution related information and the sensing locations corresponding thereto.

Abstract: An electrostatic discharge circuit includes a discharge switch, a first trigger circuit and a second trigger circuit. A first terminal of the discharge switch is coupled to a first power domain, and a second terminal of the discharge switch is coupled to a second power domain. The first trigger circuit is coupled between the first terminal and a control terminal of the discharge switch. The second trigger circuit is coupled between the second terminal and the control terminal. When an electrostatic discharge voltage occurs in the first power domain, the second trigger circuit is configured to form a conduction voltage between the second terminal and the control terminal to turn on the discharge switch. When the electrostatic discharge voltage occurs in the second power domain, the second trigger circuit is configured to short the second terminal and the control terminal to turn on the discharge switch.

Abstract: A positioning pollutant-measuring system includes a cloud server, a wireless base station, an automatic moving vehicle, and a positioning pollutant-measuring device. The automatic moving vehicle carries the positioning pollutant-measuring device and passes through different locations. The positioning pollutant-measuring device receives location related parameters from the wireless base station and measures the air flow rates or the air humidity of the different locations to adjust a resolution for measuring pollutants corresponding to the different locations.

Abstract: A resin compound has a structure represented by a chemical formula (I): In the chemical formula (I), each R1 independently represents a C1-C20 alkylene group or a C7-C40 alkylarylene group, and R1 are the same or different from each other; n independently represents an integer of 1-4; each R2 independently represents a C1-C20 alkyl group or a C2-C20 terminal alkenyl group, and R2 are the same or different from each other. When at least one of R1 represents a C1-C20 alkylene group, at least one of R2 is a C2-C20 terminal alkenyl group.

Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.

Abstract: A communication assembly is configured to be disposed on a substrate, and the communication assembly includes an optical fiber communication module and a heat dissipation shielding module. The optical fiber communication module is configured to be disposed on the substrate. The heat dissipation shielding module is configured for cooling the optical fiber communication module and protecting the optical fiber communication module from external electromagnetic interference, and the heat dissipation shielding module includes a shielding cover and a heat sink. The shielding cover is configured to be disposed on the substrate. The shielding cover and the substrate together surround and form an accommodation space. The optical fiber communication module is located in the accommodation space, and the shielding cover is in thermal contact with the optical fiber communication module. The heat sink and the shielding cover are made of a single piece.

Abstract: A transistor includes a gate structure that has a first gate dielectric layer and a second gate dielectric layer. The first gate dielectric layer is disposed over the substrate. The first gate dielectric layer contains a first type of dielectric material that has a first dielectric constant. The second gate dielectric layer is disposed over the first gate dielectric layer. The second gate dielectric layer contains a second type of dielectric material that has a second dielectric constant. The second dielectric constant is greater than the first dielectric constant. The first dielectric constant and the second dielectric constant are each greater than a dielectric constant of silicon oxide.

Abstract: A device includes a semiconductor substrate, a fin structure on the semiconductor substrate, a gate structure on the fin structure, and a pair of source/drain features on both sides of the gate structure. The gate structure includes an interfacial layer on the fin structure, a gate dielectric layer on the interfacial layer, and a gate electrode layer of a conductive material on and directly contacting the gate dielectric layer. The gate dielectric layer includes nitrogen element.

Abstract: A semiconductor device and related method for forming a gate structure. In some embodiments, a semiconductor device includes a fin extending from a substrate. In some cases, the fin includes a plurality of semiconductor channel layers. In some examples, the semiconductor device further includes a gate dielectric surrounding each of the plurality of semiconductor channel layers. In some embodiments, a first thickness of the gate dielectric disposed on a top surface of a topmost semiconductor channel layer of the plurality of semiconductor channel layers is greater than a second thickness of the gate dielectric disposed on a surface of another semiconductor channel layer disposed beneath the topmost semiconductor channel layer.

Abstract: In an embodiment, a method includes: depositing a gate dielectric layer on a first fin and a second fin, the first fin and the second fin extending away from a substrate in a first direction, a distance between the first fin and the second fin decreasing along the first direction; depositing a sacrificial layer on the gate dielectric layer by exposing the gate dielectric layer to a self-limiting source precursor and a self-reacting source precursor, the self-limiting source precursor reacting to form an initial layer of a material of the sacrificial layer, the self-reacting source precursor reacting to form a main layer of the material of the sacrificial layer; annealing the gate dielectric layer while the sacrificial layer covers the gate dielectric layer; after annealing the gate dielectric layer, removing the sacrificial layer; and after removing the sacrificial layer, forming a gate electrode layer on the gate dielectric layer.

Abstract: A method includes forming a first gate dielectric and a second gate dielectric over a first semiconductor region and a second semiconductor region, respectively, depositing a lanthanum-containing layer including a first portion and a second portion overlapping the first gate dielectric and the second gate dielectric, respectively, and depositing a hard mask including a first portion and a second portion overlapping the first portion and the second portion of the lanthanum-containing layer, respectively. The hard mask is free from both of titanium and tantalum. The method further includes forming a patterned etching mask to cover the first portion of the hard mask, with the second portion of the hard mask being exposed, removing the second portion of the hard mask and the second portion of the lanthanum-containing layer, and performing an anneal to drive lanthanum in the first portion of the lanthanum-containing layer into the first gate dielectric.

Abstract: A transistor includes a gate structure that has a first gate dielectric layer and a second gate dielectric layer. The first gate dielectric layer is disposed over the substrate. The first gate dielectric layer contains a first type of dielectric material that has a first dielectric constant. The second gate dielectric layer is disposed over the first gate dielectric layer. The second gate dielectric layer contains a second type of dielectric material that has a second dielectric constant. The second dielectric constant is greater than the first dielectric constant. The first dielectric constant and the second dielectric constant are each greater than a dielectric constant of silicon oxide.

Abstract: A semiconductor device and related method for forming a gate structure. In some embodiments, a semiconductor device includes a fin extending from a substrate. In some cases, the fin includes a plurality of semiconductor channel layers. In some examples, the semiconductor device further includes a gate dielectric surrounding each of the plurality of semiconductor channel layers. In some embodiments, a first thickness of the gate dielectric disposed on a top surface of a topmost semiconductor channel layer of the plurality of semiconductor channel layers is greater than a second thickness of the gate dielectric disposed on a surface of another semiconductor channel layer disposed beneath the topmost semiconductor channel layer.

Abstract: A method of fabricating a device includes providing a fin extending from a substrate in a device type region, where the fin includes a plurality of semiconductor channel layers. In some embodiments, the method further includes forming a gate structure over the fin. Thereafter, in some examples, the method includes removing a portion of the plurality of semiconductor channel layers within a source/drain region adjacent to the gate structure to form a trench in the source/drain region. In some cases, the method further includes after forming the trench, depositing an adhesion layer within the source/drain region along a sidewall surface of the trench. In various embodiments, and after depositing the adhesion layer, the method further includes epitaxially growing a continuous first source/drain layer over the adhesion layer along the sidewall surface of the trench.

Abstract: A method for storage and supply of a F3NO-free FNO-containing gas comprises the steps of storing the F3NO-free FNO-containing gas in a NiP coated steel cylinder with a polished inner surface, releasing the F3NO-free FNO-containing gas from the cylinder to a manifold assembly by activating a cylinder valve in fluid communication with the cylinder and the manifold assembly, de-pressurizing the F3NO-free FNO-containing gas by activating a pressure regulator in the manifold assembly so as to divide the manifold assembly into a first pressure zone upstream of the pressure regulator and a second pressure zone downstream of the pressure regulator, and feeding the de-pressurized F3NO-free FNO-containing gas to a target reactor downstream of the second pressure zone.

Abstract: A semiconductor structure includes a first pair of source/drain features (S/D), a first stack of channel layers connected to the first pair of S/D, a second pair of S/D, and a second stack of channel layers connected to the second pair of S/D. The first pair of S/D each include a first epitaxial layer having a first dopant, a second epitaxial layer having a second dopant and disposed over the first epitaxial layer and connected to the first stack of channel layers, and a third epitaxial layer having a third dopant and disposed over the second epitaxial layer. The second pair of S/D each include a fourth epitaxial layer having a fourth dopant and connected to the second stack of channel layers, and a fifth epitaxial layer having a fifth dopant and disposed over the fourth epitaxial layer. The first dopant through the fourth dopant are of different species.