Abstract: An apparatus and method of three dimensional conductive lines comprising a first memory column segment in a first tier, a second memory column segment in a second tier, and conductive lines connecting the first memory column segment to the second memory column segment. In some embodiments a conductive line is disposed in the first tier on a first side of the memory column and in the second tier on a second side of the memory column.

Abstract: A wireless network is provided. The wireless network includes a predetermined wireless router and a plurality of wireless routers. The predetermined wireless router has gateway functionality for accessing an external network. Each wireless router of the wireless routers has a single transceiver, and the wireless routers include at least a wireless router which communicates with other wireless router(s) in the wireless network for forwarding network packets by using a single fixed channel and at least a wireless router which communicates with other wireless router(s) in the wireless network for forwarding network packets by using a plurality of channels.

Abstract: An apparatus and method of three dimensional conductive lines comprising a first memory column segment in a first tier, a second memory column segment in a second tier, and conductive lines connecting the first memory column segment to the second memory column segment. In some embodiments a conductive line is disposed in the first tier on a first side of the memory column and in the second tier on a second side of the memory column.

Abstract: An electronic device is disclosed that includes memory cells, a word line, a selection unit and a self-boosted driver. The memory cells are configured to store data. The word line is coupled to the memory cells. The selection unit is disposed at a first terminal of the word line, and is configured to transmit a selection signal to activate the word line according to one of a read command and a write command. The self-boosted driver is disposed at a second terminal of the word line, and is configured to pull up a voltage level of the word line according to a voltage level of the word line and a control signal.

Abstract: A memory device includes a memory cell electrically connected to a power line and a power supply unit configured to control a voltage level on the power line. The power supply unit receives a control signal corresponding to a write cycle of the memory cell and, responsive to a first state of the control signal, outputs a first voltage level on the power line. Responsive to a second state of the control signal, the power supply unit outputs a second voltage level on the power line, the second voltage level having a magnitude less than a magnitude of the first voltage level.

Abstract: One or more systems and methods for controlling a target dimension for a wafer are provided. A processing chamber, such as an etching chamber, is configured to etch one or more wafers. In some embodiments, during processing of a first wafer of a set of wafers, the processing chamber is coated with a relatively thicker chamber coating than chamber coatings used for subsequently processed wafers of the set of wafers. The increased chamber coating thickness results in the first wafer having a target dimension that is substantially similar to target dimensions of the subsequently processed wafers. In some embodiments, a post wafer cleaning process is performed, but a pre wafer cleaning process is disabled, between processing a final wafer of a first set of wafers and an initial wafer of a second set of wafers so that the final wafer and the initial wafer have substantially similar target dimensions.

Abstract: A memory device includes storage layers each comprising memory cells arranged in a plurality of rows, bit lines coupled to the memory cells in the corresponding rows, tracking cells arranged in at least one row, at least one tracking bit line coupled to the tracking cells, and at least one sense amplifier coupled to the bit lines. The sense amplifier is configured to detect data stored in the memory cells, and has an enabling terminal coupled to the at least one tracking bit line. The memory device further comprises word lines and tracking word lines extending through the storage layers. The word lines are coupled to the corresponding memory cells in the storage layers. The tracking word lines are coupled to the corresponding tracking cells in the storage layers.

Abstract: A method for patterning a wafer includes performing a first patterning on a wafer, and after performing the first patterning, calculating a simulated dose mapper (DoMa) map predicting a change in critical dimensions of the wafer due to performing a second patterning on the wafer. The method further includes performing the second patterning on the wafer. Performing the second patterning includes adjusting one or more etching parameters of the second patterning in accordance with differences between the simulated DoMa map and desired critical dimensions of the wafer.

Abstract: One or more techniques or systems for boosting a read word line (RWL) or a write word line (WWL) of a two port synchronous random access memory (SRAM) bit cell array are provided herein. In some embodiments, a boosted control block is configured to generate a boosted word line signal configured to operate a RWL, a WWL, or a read write word line (RWWL). In some embodiments, the boosted word line signal includes a first stage and a second stage. For example, the first stage is associated with a first stage voltage level at a positive supply voltage (Vdd) voltage level and the second stage is associated with a second stage voltage level above the Vdd voltage level. In this manner, a read or write operation is boosted for an SRAM bit cell, because the second stage boosts a corresponding transistor in the SRAM bit cell, for example.

Abstract: One or more systems and methods for reshaping a hard mask are provided. A semiconductor arrangement comprises one or more structures formed from a layer according to a target dimension, such as a width criterion, a length criterion, a spacing criterion, or other design constraints. To form such a structure, a hard mask is formed over the layer. Responsive to a dimension, such as a width, of the hard mask not corresponding to the target dimension, a first hard mask portion is modified to create a modified hard mask comprising a modified first hard mask portion. In some embodiments, the first hard mask portion is trimmed to decrease the dimension or coated with a coating material to increase the dimension. An etch of the layer is performed through the modified hard mask to create an etched layer comprising an etched portion, such as the structure, corresponding to the target dimension.

Abstract: A static random access memory (SRAM) including at least a first memory cell array, a second memory cell array, a first data line connected to the first memory cell array and the second memory cell array, a primary driver circuit connected to the first data line and a supplementary driver circuit connected to the first data line, wherein the supplementary driver circuit is configured to pull a voltage level of the first data line to a first voltage level during a write operation of the SRAM.

Abstract: One or more techniques or systems for boosting a read word line (RWL) or a write word line (WWL) of a two port synchronous random access memory (SRAM) bit cell array are provided herein. In some embodiments, a boosted control block is configured to generate a boosted word line signal configured to operate a RWL, a WWL, or a read write word line (RWWL). In some embodiments, the boosted word line signal includes a first stage and a second stage. For example, the first stage is associated with a first stage voltage level at a positive supply voltage (Vdd) voltage level and the second stage is associated with a second stage voltage level above the Vdd voltage level. In this manner, a read or write operation is boosted for an SRAM bit cell, because the second stage boosts a corresponding transistor in the SRAM bit cell, for example.

Abstract: A static random access memory (SRAM) that includes a memory cell comprising at least two p-type pass gates. The SRAM also includes a first data line connected to the memory cell, a second data line connected to the memory cell and a voltage control unit connected to the first data line, wherein the voltage control unit is configured to control the memory cell.

Abstract: A memory device includes a memory cell electrically connected to a power line and a power supply unit configured to control a voltage level on the power line. The power supply unit receives a control signal corresponding to a write cycle of the memory cell and, responsive to a first state of the control signal, outputs a first voltage level on the power line. Responsive to a second state of the control signal, the power supply unit outputs a second voltage level on the power line, the second voltage level having a magnitude less than a magnitude of the first voltage level.

Abstract: A memory device includes storage layers each comprising memory cells arranged in a plurality of rows, bit lines coupled to the memory cells in the corresponding rows, tracking cells arranged in at least one row, at least one tracking bit line coupled to the tracking cells, and at least one sense amplifier coupled to the bit lines. The sense amplifier is configured to detect data stored in the memory cells, and has an enabling terminal coupled to the at least one tracking bit line. The memory device further comprises word lines and tracking word lines extending through the storage layers. The word lines are coupled to the corresponding memory cells in the storage layers. The tracking word lines are coupled to the corresponding tracking cells in the storage layers.

Abstract: A method for patterning a wafer includes performing a first patterning on a wafer, and after performing the first patterning, calculating a simulated dose mapper (DoMa) map predicting a change in critical dimensions of the wafer due to performing a second patterning on the wafer. The method further includes performing the second patterning on the wafer. Performing the second patterning includes adjusting one or more etching parameters of the second patterning in accordance with differences between the simulated DoMa map and desired critical dimensions of the wafer.

Abstract: Some aspects of the present disclosure a method. In this method, a wordline voltage is provided to a wordline, which is coupled to a plurality of memory cells. A boost enable signal is provided. The state of the boost enable signal is indicative of whether the wordline voltage at a predetermined position on the wordline has reached a non-zero, predetermined wordline voltage. The wordline voltage is selectively boosted to a boosted wordline voltage level based on the boost enable signal.

Abstract: One or more techniques or systems for boosting a read word line (RWL) or a write word line (WWL) of a two port synchronous random access memory (SRAM) bit cell array are provided herein. In some embodiments, a boosted control block is configured to generate a boosted word line signal configured to operate a RWL, a WWL, or a read write word line (RWWL). In some embodiments, the boosted word line signal includes a first stage and a second stage. For example, the first stage is associated with a first stage voltage level at a positive supply voltage (Vdd) voltage level and the second stage is associated with a second stage voltage level above the Vdd voltage level. In this manner, a read or write operation is boosted for an SRAM bit cell, because the second stage boosts a corresponding transistor in the SRAM bit cell, for example.

Abstract: One or more systems and methods for controlling a target dimension for a wafer are provided. A processing chamber, such as an etching chamber, is configured to etch one or more wafers. In some embodiments, during processing of a first wafer of a set of wafers, the processing chamber is coated with a relatively thicker chamber coating than chamber coatings used for subsequently processed wafers of the set of wafers. The increased chamber coating thickness results in the first wafer having a target dimension that is substantially similar to target dimensions of the subsequently processed wafers. In some embodiments, a post wafer cleaning process is performed, but a pre wafer cleaning process is disabled, between processing a final wafer of a first set of wafers and an initial wafer of a second set of wafers so that the final wafer and the initial wafer have substantially similar target dimensions.

Abstract: A method of writing a memory cell includes, during a write cycle, causing a voltage level at a power terminal of the memory cell to change from a supply voltage level toward a first voltage level. The voltage level at the power terminal of the memory cell is maintained at the first voltage level for a first predetermined duration. The voltage level at the power terminal of the memory cell is maintained at a second voltage level for a second predetermined duration, where the second voltage level is between the first voltage level and the supply voltage level. During the write cycle, the voltage level at the power terminal of the memory cell is caused to change from the first voltage level toward the supply voltage level.