Abstract: A memory cell includes a write port and a read port. The write port includes two cross-coupled inverters that form a storage unit. The cross-coupled inverters are connected between a first power source signal line and a second power source signal line. The write port also includes a first local interconnect line in an interconnect layer that is connected to the second power source signal line. The read port includes a transistor that is connected to the storage unit in the write port and to the second power source signal line, and a second local interconnect line in the interconnect layer that is connected to the second power source signal line. The second local interconnect line in the read port is separate from the first local interconnect line in the write port.

Abstract: A memory array includes a first memory cell configured to store data, a second memory cell configured to store data and a bit line extending along the first direction, and being over the first memory cell and the second memory cell. The first memory cell and the second memory cell are arranged along a first direction in a first column of memory cells. The bit line includes a first conductor extending in the first direction and being in a first conductive layer, and a second conductor extending in the first direction and being in a second conductive layer different from the first conductive layer.

Abstract: A semiconductor chip is provided. The semiconductor chip includes a memory cell and a logic cell disposed aside the memory cell, and includes signal and ground lines with the memory and logic cells located therebetween. The memory cell includes first and second active structures extending along a first direction, and includes a storage transmission gate line, first through third gate lines and a read transmission gate line extending along a second direction. The storage transmission gate line includes first and second line segments, which respectively extends across the active structures. The first through third gate lines continuously extend across the first and second active structures. The read transmission gate line includes third and fourth line segments, which respectively extend across the active structures. The first through third gate lines are located between the storage and read transmission gate lines.

Abstract: A memory device is provided. The memory device includes a memory cell and a bit line connected to the memory cell. A negative voltage generator is connected to the bit line. The negative voltage generator, when enabled, is operative to provide a first write path for the bit line. A control circuit is connected to the negative voltage generator and the bit line. The control circuit is operative to provide a second write path for the bit line when the negative voltage generator is not enabled.

Abstract: A cell structure is disclosed. The cell structure includes a first unit comprising a first group of transistors and a first data latch, a second unit comprising a second group of transistors and a second data latch a read port unit comprising a plurality of p-type transistors, a search line and a complementary search line, the search line and the complementary search line function as input of the cell structure, and a master line, the master line functions as an output of the cell structure, the first unit is coupled to the second unit, both the first and the second units are coupled to the read port unit. According to some embodiments, the first data latch comprises a first and a second p-type transistors, a first and a second n-type transistors.

Abstract: A device is disclosed that includes a memory bit cell coupled to a bit line, a word line, a pair of metal islands and a pair of connection metal lines. The word line is electrically coupled to the memory bit cell and is elongated in a first direction. The pair of metal islands are disposed at opposite sides of the word line and are electrically coupled to a power supply. The pair of connection metal lines are elongated in a second direction, and are configured to electrically couple the pair of metal islands to the memory bit cell, respectively. The pair of connection metal lines are separated from the bit line in a layout view. A method of fabricating the device is also provided.

Abstract: A memory cell includes a first and second pull up transistor, a first and second pass gate transistor and a metal contact. The first pull up transistor has a first active region extending in a first direction. The first pass gate transistor has a second active region extending in the first direction, and being separated from the first active region in a second direction. The second active region is adjacent to the first active region. The second pass gate transistor is coupled to the second pull up transistor. The metal contact extends in the second direction, and extends from the first active region to the second active region. The metal contact couples drains of the first pull up transistor and the first pass gate transistor. The first and second pass gate transistors and the first and second pull up transistors are part of a four transistor memory cell.

Abstract: A method for performing adaptive locking range management, an associated data storage device and a controller thereof are provided. The method may include: receiving a security command from outside of the data storage device, wherein the security command is related to changing an old locking range into a new locking range; obtaining a start Logical Block Address (LBA) and a length value of the new locking range according to the security command; determining whether the start LBA of the new locking range is less than an end LBA of the old locking range, and determining whether an end LBA of the new locking range is greater than a start LBA of the old locking range; and in response to both determination results being true, performing data trimming on any respective non-overlapped portions of the new locking range and the old locking range.

Abstract: The present invention relates to a proximity sensor and a proximity sensing method. The proximity sensor includes a sensing element and a sensing circuit. The sensing circuit is coupled to the sensing element and transmits a first driving signal and a second signal to the sensing element, respectively. The sensing element receives the first driving signal and the second driving signal, respectively, and generates a first sensing signal and a second sensing signal, respectively. The sensing circuit generates a proximity signal according to the first sensing signal and the second sensing signal. Therefore, the present invention may improve the accuracy of sensing the proximity of the human body whether near to the sensor.

Abstract: A memory macro system may be provided. The memory macro system may comprise a first segment, a second segment, a first WL, and a second WL. The first segment may comprise a first plurality of memory cells. The second segment may comprise a second plurality of memory cells. The first segment may be positioned over the second segment. The first WL may correspond to the first segment and the second WL may correspond to the second segment. The first WL and the second WL may be configured to be activated in one cycle.

Abstract: A cell structure is disclosed. The cell structure includes a first unit comprising a first group of transistors and a first data latch, a second unit comprising a second group of transistors and a second data latch a read port unit comprising a plurality of p-type transistors, a search line and a complementary search line, the search line and the complementary search line function as input of the cell structure, and a master line, the master line functions as an output of the cell structure, the first unit is coupled to the second unit, both the first and the second units are coupled to the read port unit. According to some embodiments, the first data latch comprises a first and a second p-type transistors, a first and a second n-type transistors.

Abstract: A memory array includes a column of cells arranged along a first direction and a bit line extending along the first direction over the column of cells. The column of cells includes a set of memory cells and a set of strap cells. The bit line includes a first conductor in a second conductor. The first conductor extends in the first direction and is in a first conductive layer. The second conductor extends in the first direction and is in a second conductive layer different from the first conductive layer.

Abstract: A static random access memory (SRAM) device includes a first memory array including a plurality of memory cells, each memory cell including a first pass gate transistor with a first threshold voltage connected to a bit line. The SRAM device further includes a second memory array including a plurality of memory cells, each memory cell including a second pass gate transistor with a second threshold voltage connected to the bit line. The SRAM device further includes a peripheral input-output circuit connected to the bit line. The SRAM device still further includes a column of write current tracking cells, each tracking cell disposed within a row of the first memory array and the second memory array, wherein the first memory array is between the peripheral input-output circuit and the second memory array.

Abstract: A memory device is provided. The memory device includes a shift register array having a plurality of shift registers arranged in a matrix of a plurality of rows and a plurality of columns. Each of the plurality of rows comprises a first plurality of shift registers and each of the plurality of columns comprises a second plurality of shift registers. Each of the plurality of rows are associated with a read word line and a write word lines. Each of the plurality of rows are associated with a data input line and a data output line. Each of the plurality of shift arrays comprises a static random access memory.

Abstract: An active stylus includes a stylus body and a touch sensor. The stylus body includes a first electrode and a pen body. The first electrode is used to send a signal. The pen body extends along a first direction. The touch sensor is provided on or in the pen body and includes a plurality of column electrodes extending along the first direction. There is a first gap between two adjacent column electrodes. Each column electrode has a first sensing electrode and a second sensing electrode. A first end of the first sensing electrode in the first direction has a recess to define a recess area. A second end of the second sensing electrode in the first direction has a projection extending into the recess area. There is a second gap between the projection and the recess. The second gap is smaller than the first gap.

Abstract: A memory macro system may be provided. The memory macro system may comprise a first segment, a second segment, a first WL, and a second WL. The first segment may comprise a first plurality of memory cells. The second segment may comprise a second plurality of memory cells. The first segment may be positioned over the second segment. The first WL may correspond to the first segment and the second WL may correspond to the second segment. The first WL and the second WL may be configured to be activated in one cycle.

Abstract: A touch display device includes a display area and a non-display area and further includes a touch electrode layer; wherein a plurality of sensing electrodes is configured in the electrode layer; wherein each sensing electrode extends from the display area to the non-display area and is coupled to a driver chip via a connection structure; wherein the connection structure locates in the non-display area.

Abstract: A method for performing adaptive locking range management, an associated data storage device and a controller thereof are provided. The method may include: receiving a security command from outside of the data storage device, wherein the security command is related to changing an old locking range into a new locking range; obtaining a start Logical Block Address (LBA) and a length value of the new locking range according to the security command; determining whether the start LBA of the new locking range is less than an end LBA of the old locking range, and determining whether an end LBA of the new locking range is greater than a start LBA of the old locking range; and in response to both determination results being true, performing data trimming on any respective non-overlapped portions of the new locking range and the old locking range.

Abstract: The present disclosure describes embodiments of a write assist circuit. The write assist circuit can include a control circuit and a voltage generator. The control circuit can be configured to receive memory address information associated with a memory write operation for memory cells. The voltage generator can be configured to provide a reference voltage to one or more bitlines coupled to the memory cells. The voltage generator can include two capacitive elements, where during the memory write operation, (i) one of the capacitive elements can be configured to couple the reference voltage to a first negative voltage, and (ii) based on the memory address information, both capacitive elements can be configured to cumulatively couple the reference voltage to a second negative voltage that is lower than the first negative voltage.

Abstract: A semiconductor chip is provided. The semiconductor chip includes a memory cell and a logic cell disposed aside the memory cell, and includes signal and ground lines with the memory and logic cells located therebetween. The memory cell includes first and second active structures extending along a first direction, and includes a storage transmission gate line, first through third gate lines and a read transmission gate line extending along a second direction. The storage transmission gate line includes first and second line segments, which respectively extends across the active structures. The first through third gate lines continuously extend across the first and second active structures. The read transmission gate line includes third and fourth line segments, which respectively extend across the active structures. The first through third gate lines are located between the storage and read transmission gate lines.