Patents by Inventor Chin-an Cheng

Chin-an Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240138771
    Abstract: A pulse manifestation determining method is provided. The pulse manifestation method includes following steps. A pulse signal for determination is obtained. A valid range of the pulse signal for determination is determined through identifying a reverse pulse. A pulse manifestation is determined based on the valid range.
    Type: Application
    Filed: July 31, 2023
    Publication date: May 2, 2024
    Applicant: AUO Corporation
    Inventors: Chien Cheng Wang, Jung-Teng Pan, Chin-Tang Chuang
  • Publication number: 20240147556
    Abstract: In some examples, a device can include a first antenna having a first wireless connection with a first computing device, a second antenna having a second wireless connection with a second computing device, and a controller to determine a signal strength of the first wireless connection and a signal strength of the second wireless connection, designate, in response to the signal strength of the first wireless connection being greater than a threshold signal strength, the first wireless connection as an active connection and the second wireless connection as a standby connection, and cause the peripheral device to communicate with the first computing device via the active connection of the first antenna while maintaining the second wireless connection to the second computing device via the second antenna, where the second wireless connection remains as the standby connection.
    Type: Application
    Filed: October 28, 2022
    Publication date: May 2, 2024
    Inventors: Min-Hsu Chuang, Xin-Chang Chen, Pai-Cheng Huang, Chin-Hung Ma, Shih-Yen Cheng
  • Publication number: 20240145379
    Abstract: Methods and semiconductor devices are provided. A method includes determining a location of a polyimide opening (PIO) corresponding to an under-bump metallization (UBM) feature in a die. The die includes a substrate and an interconnect structure over the substrate. The method also includes determining a location of a stacked via structure in the interconnect structure based on the location of the PIO. The method further includes forming, in the interconnect structure, the stacked via structure comprising at most three stacked contact vias at the location of the PIO.
    Type: Application
    Filed: February 23, 2023
    Publication date: May 2, 2024
    Inventors: Yen-Kun Lai, Wei-Hsiang Tu, Ching-Ho Cheng, Cheng-Nan Lin, Chiang-Jui Chu, Chien Hao Hsu, Kuo-Chin Chang, Mirng-Ji Lii
  • Publication number: 20240144056
    Abstract: A method includes: obtaining impact values for characteristic conditions; selecting training data subsets respectively from training data sets according to the impact values; obtaining a candidate model and an evaluation value based on the training data subsets; supplementing the training data subsets according to the impact values; obtaining another candidate model and another evaluation value based on training data subsets thus supplemented; repeating the step of supplementing the training data subset, and the step of obtaining another candidate model and another evaluation value based on the training data subsets thus supplemented; and selecting one of the candidate models as a prediction model based on the evaluation values.
    Type: Application
    Filed: August 2, 2023
    Publication date: May 2, 2024
    Applicants: TAIPEI VETERANS GENERAL HOSPITAL
    Inventors: Chin-Chou Huang, Ming-Hui Hung, Ling-Chieh Shih, Yu-Ching Wang, Han Cheng, Yu-Chieh Shiao, Yu-Hsuan Tseng
  • Patent number: 11971657
    Abstract: A photoresist developer includes a solvent having Hansen solubility parameters of 15<?d<25, 10<?p<25, and 6<?p<30; an acid having an acid dissociation constant, pKa, of ?15<pKa<4, or a base having a pKa of 40>pKa>9.5; and a chelate.
    Type: Grant
    Filed: April 11, 2022
    Date of Patent: April 30, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: An-Ren Zi, Chin-Hsiang Lin, Ching-Yu Chang, Yahru Cheng
  • Publication number: 20240133481
    Abstract: A tank valve system comprises a main valve body, an overfill protection device (OPD), a gauge drive apparatus and a fuel level indicator. The OPD and gauge drive apparatus are configured to both be inserted through a narrow neck of a fuel storage tank prior to connecting the valve body to the neck. The valve body includes a primary fuel channel and a shuttle interface channel. The OPD includes an overfill float driving an overfill shutoff valve for controlling fluid flow from the primary channel into the tank. The gauge drive apparatus includes a gauge float, a shuttle, and an elongated extension body. The gauge float is movable with respect to the extension body between an uppermost position and a lowermost position, thereby driving the shuttle. The shuttle has a gauge actuation portion transportable within the shuttle interface channel to thereby actuate the fuel level indicator.
    Type: Application
    Filed: January 2, 2024
    Publication date: April 25, 2024
    Inventors: Shmuel Dovid Newman, Chin-Cheng Chang
  • Patent number: 11962847
    Abstract: A channel hiatus correction method for an HDMI device is provided. A recovery code from scrambled data of the stream is obtained. A liner feedback shift register (LFSR) value of channels of the HDMI port is obtained based on the recovery code and the scrambled data of the stream. The stream is de-scrambled according to the LFSR value of the channels of the HDMI port. Video data is displayed according to the de-scrambled stream.
    Type: Grant
    Filed: November 9, 2022
    Date of Patent: April 16, 2024
    Assignee: MEDIATEK INC.
    Inventors: Chia-Hao Chang, You-Tsai Jeng, Kai-Wen Yeh, Yi-Cheng Chen, Te-Chuan Wang, Kai-Wen Cheng, Chin-Lung Lin, Tai-Lai Tung, Ko-Yin Lai
  • Publication number: 20240121899
    Abstract: An electronic device includes a substrate, a plurality of flexible circuit boards, a plurality of ICs and an insulator. The flexible circuit boards are disposed on the substrate. In a top view of the electronic device, the flexible circuit boards are overlapped with an edge of the substrate. The ICs are disposed on the substrate. The insulator is disposed on the flexible circuit boards and contacted the ICs, wherein the insulator has a first side and a second side opposite to the first side and the first side is closer to the edge than the second side. Along a first direction perpendicular to an extension direction of the edge, a first minimum distance between the second side and one of the ICs is less than a second minimum distance between the second side and one of the flexible circuit boards.
    Type: Application
    Filed: December 19, 2023
    Publication date: April 11, 2024
    Inventors: Chin-Cheng Kuo, Chia-Chun Yang, Wen-Cheng Huang
  • Patent number: 11957064
    Abstract: A semiconductor device includes a magnetic tunneling junction (MTJ) on a substrate, a spacer adjacent to the MTJ, a liner adjacent to the spacer, and a first metal interconnection on the MTJ. Preferably, the first metal interconnection includes protrusions adjacent to two sides of the MTJ and a bottom surface of the protrusions contact the liner directly.
    Type: Grant
    Filed: October 18, 2022
    Date of Patent: April 9, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Hui-Lin Wang, Chen-Yi Weng, Yi-Wei Tseng, Chin-Yang Hsieh, Jing-Yin Jhang, Yi-Hui Lee, Ying-Cheng Liu, Yi-An Shih, I-Ming Tseng, Yu-Ping Wang
  • Publication number: 20240113199
    Abstract: A method of manufacturing a semiconductor device includes forming a gate electrode structure over a channel region, wherein the gate electrode structure includes a gate dielectric layer disposed over the first channel region, a gate electrode disposed over the gate dielectric layer, and insulating spacers disposed over opposing sidewalls of the gate electrode, wherein the gate dielectric layer is disposed over opposing sidewalls of the gate electrode. An interlayer dielectric layer is formed over opposing sidewalls of the insulating spacers. The insulating spacers are removed from an upper portion of the opposing sidewalls of the gate electrode to form trenches between the opposing sidewalls of the upper portion of the gate electrode and the interlayer dielectric layer, and the trenches are filled with an insulating material.
    Type: Application
    Filed: February 7, 2023
    Publication date: April 4, 2024
    Inventors: Jia-Chuan YOU, Chia-Hao Chang, Kuo-Cheng Chiang, Chin-Hao Wang
  • Patent number: 11941298
    Abstract: A host system initiates an abort of a command that has been placed into a submission queue (SQ) of the host system. The host system identifies at least one of a first outcome and a second outcome. When the first outcome indicates that the command is not completed and the second outcome indicates that the SQ entry has been fetched from the SQ, the host system sends an abort request to a storage device, and issues a cleanup request to direct the host controller to reclaim host hardware resources allocated to the command. The host system adds a completion queue (CQ) entry to a CQ and sets an overall command status (OCS) value of the CQ entry based on at least one of the first outcome and the second outcome.
    Type: Grant
    Filed: April 19, 2022
    Date of Patent: March 26, 2024
    Assignee: MediaTek Inc.
    Inventors: Chih-Chieh Chou, Chia-Chun Wang, Liang-Yen Wang, Chin Chin Cheng, Szu-Chi Liu
  • Publication number: 20240096731
    Abstract: A semiconductor package is provided, which includes a first chip disposed over a first package substrate, a molding compound surrounding the first chip, a first thermal interface material disposed over the first chip and the molding compound, a heat spreader disposed over the thermal interface material, and a second thermal interface material disposed over the heat spreader. The first thermal interface material and the second thermal interface material have an identical width.
    Type: Application
    Filed: November 29, 2023
    Publication date: March 21, 2024
    Inventors: Chin-Hua WANG, Po-Yao LIN, Feng-Cheng HSU, Shin-Puu JENG, Wen-Yi LIN, Shu-Shen YEH
  • Publication number: 20240097323
    Abstract: In some examples, a device can include an antenna to emit waves in a radiation pattern having a first beamwidth, a directional radiation control device located in a path of the waves, where the directional radiation control device is to receive the waves from the antenna and is shaped to cause the waves to be directed in a different radiation pattern having a second beamwidth that is larger than the first beamwidth.
    Type: Application
    Filed: September 15, 2022
    Publication date: March 21, 2024
    Inventors: Chin-Hung Ma, Pai-Cheng Huang, Po Chao Chen, Shih-Huang Wu
  • Publication number: 20240097888
    Abstract: In a file sharing system, a key manager unit realizes a correspondence between the first user identifier and the first public key in response to a registration request of the first user, generates a first key material for encrypting the first file into a first encrypted file, and generates a first credential according to the first user identifier, the first file identifier, the first public key and the first key material after receiving an access-right claim request to the first file from the first user. A file storage unit stores the first encrypted file and the first credential. The first user uses the first user identifier, the first file identifier and the first private key to retrieve the first key material out of the first credential, and uses the first key material to decrypt the first encrypted file into the first file.
    Type: Application
    Filed: September 18, 2023
    Publication date: March 21, 2024
    Inventors: CHIA-JUNG LIANG, CHIHHUNG LIN, CHIH-PING HSIAO, YU-JIE SU, CHIA-HSIN CHENG, TUN-HOU WANG, MENG-CHAO TSAI, YUEH-CHIN LIN
  • Publication number: 20240094626
    Abstract: A pellicle for an extreme ultraviolet (EUV) photomask includes a pellicle frame and a main membrane attached to the pellicle frame. The main membrane includes a plurality of nanotubes, and each of the plurality of nanotubes is covered by a coating layer containing Si and one or more metal elements.
    Type: Application
    Filed: April 12, 2023
    Publication date: March 21, 2024
    Inventors: Pei-Cheng HSU, Wei-Hao LEE, Huan-Ling LEE, Hsin-Chang LEE, Chin-Hsiang LIN
  • Patent number: 11935452
    Abstract: An electronic circuit for operating with a display panel including touch sensors and fingerprint sensors is provided. The electronic circuit includes a first circuit, a second circuit, a third circuit, a first switch circuit and a control circuit. The first circuit generates display driving signals for driving the display panel. The second circuit receives fingerprint sensing signals from the fingerprint sensors. The third circuit determines a touch information according to touch sensing signals from the touch sensors. The first switch circuit includes a plurality of first switch units, each of the first switch units includes a first switch element and a second switch element. The control circuit controls the first switch circuit to transmit the display driving signals in a first time interval, controls the first switch circuit to transmit the fingerprint sensing signals in a second time interval, and controls the third circuit to receive the fingerprint sensing signals in a third time interval.
    Type: Grant
    Filed: February 17, 2023
    Date of Patent: March 19, 2024
    Assignee: Novatek Microelectronics Corp.
    Inventors: Huan-Teng Cheng, Ting-Hsuan Hung, Tzu-Wen Hsieh, Wei-Lun Shih, Huang-Chin Tang
  • Patent number: 11936299
    Abstract: A transistor includes a gate structure over a substrate, wherein the substrate includes a channel region. The transistor further includes a source/drain (S/D) in the substrate adjacent to the gate structure. The transistor further includes a lightly doped drain (LDD) region adjacent to the S/D, wherein a dopant concentration in the first LDD is less than a dopant concentration in the S/D. The transistor further includes a doping extension region adjacent the LDD region, wherein the doping extension region extends farther under the gate structure than the LDD region, and a maximum depth of the doping extension region is 10-times to 30-times greater than a maximum depth of the LDD.
    Type: Grant
    Filed: September 21, 2020
    Date of Patent: March 19, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chu Fu Chen, Chi-Feng Huang, Chia-Chung Chen, Chin-Lung Chen, Victor Chiang Liang, Chia-Cheng Pao
  • Publication number: 20240084447
    Abstract: A sealing article includes a body and a coating layer disposed on at least one surface of the body. The body comprises a polymeric elastomer such as perfluoroelastomer or fluoroelastomer. The coating layer comprises at least one metal. The sealing article may be a seal, a gasket, an O-ring, a T-ring or any other suitable product. The sealing article is resistant to ultra-violet (UV) light and plasma, and may be used for sealing a semiconductor processing chamber.
    Type: Application
    Filed: November 17, 2023
    Publication date: March 14, 2024
    Inventors: Peng-Cheng Hong, Jun-Liang Pu, W.L. Hsu, Chung-Hao Kao, Chia-Chun Hung, Cheng-Yi Wu, Chin-Szu Lee
  • Publication number: 20240087980
    Abstract: A semiconductor device includes a substrate, a dielectric layer disposed over the substrate, and an interconnect structure extending through the dielectric layer. The dielectric layer includes a low-k dielectric material which includes silicon carbonitride having a carbon content ranging from about 30 atomic % to about 45 atomic %. The semiconductor device further includes a thermal dissipation feature extending through the dielectric layer and disposed to be spaced apart from the interconnect structure.
    Type: Application
    Filed: February 17, 2023
    Publication date: March 14, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Kai-Fang CHENG, Cherng-Shiaw TSAI, Cheng-Chin LEE, Yen-Ju WU, Yen-Pin HSU, Li-Ling SU, Ming-Hsien LIN, Hsiao-Kang CHANG
  • Publication number: 20240087207
    Abstract: Disclosed herein are system, method, and computer program product embodiments for reducing GPU load by programmatically controlling shading rates in computer graphics. GPU load may be reduced by applying different shading rates to different screen regions. By reading the depth buffer of previous frames and performing image processing, thresholds may be calculated that control the shading rates. The approach may be run on any platform that supports VRS hardware and primitive- or image-based VRS. The approach may be applied on a graphics driver installed on a client device, in a firmware layer between hardware and a driver, in a software layer between a driver and an application, or in hardware on the client device. The approach is flexible and adaptable and calculates and sets the variable rate shading based on the graphics generated by an application without requiring the application developer to manually set variable rate shading.
    Type: Application
    Filed: September 14, 2022
    Publication date: March 14, 2024
    Applicant: MediaTek Inc.
    Inventors: Po-Yu HUANG, Shih-Chin LIN, Jen-Jung CHENG, Tu-Hsiu LEE