Abstract: A memory device includes a dielectric substrate, an interlayer structure, a plurality of channel pillars, a plurality of charge storage structures, a plurality of slit structures and an assistance structure. The dielectric substrate includes an array region and an iso region aside the array region. The interlayer structure is disposed in the array region and the iso region. The channel pillars penetrate through the interlayer structure in the array region. The charge storage structures are disposed between the interlayer structure and the plurality of channel pillars. The slit structures are disposed between the plurality of channel pillars, penetrate through the interlayer structure in the array region, and divide the interlayer structure into a plurality of blocks. The assistance structure is arranged in the iso region. The assistance structure includes at least one dummy slit structure having an extension direction different from an extension direction of the plurality of slit structures.

Abstract: A software-defined media platform having one or more media processing units that may be dynamically instantiated, interconnected and configured according to changes in demand, resource availability, and other parameters affecting system performance relative to demand. In one example media processing method, a source media stream may be received via multicast or unicast. The source media stream may be processed into one or more levels of work product segments having different media characteristics by a plurality of transcoding processing units, as needed. One or more levels of work product segments, or the source media stream, may be packaged (e.g., including resegmenting) into final work product segments having select media characteristics, which may be uploaded to a cloud storage unit for delivery to end users.

Abstract: A routing pattern is provided. The routing pattern includes a first routing region, a second routing region and an interconnection region. The first routing region includes a plurality of first conductive lines extending along a first direction. The plurality of first conductive lines has a first pitch along a second direction perpendicular to the first direction. The second routing region includes a plurality of second conductive lines extending along the first direction. The plurality of second conductive lines has a second pitch along the second direction, and the second pitch is approximately equal to the first pitch. The interconnection region includes two body parts and a connecting part connecting to the body parts. The body parts are disposed separately along the first direction. A width of the connecting part along the second direction is smaller than a width of the body parts along the second direction.

Abstract: A technique performs load balancing self-adjustment within an application environment. The technique involves, while nodes of the application environment load balance traffic among clusters that provide services for an application in accordance with a first load balancing configuration, sensing application environment metrics. The technique further involves performing a self-adjustment operation that generates a second load balancing configuration based on the application environment metrics, the second load balancing configuration being different from the first load balancing configuration. The technique further involves deploying the second load balancing configuration among the nodes to enable the nodes to load balance the traffic among the clusters that provide the services for the application in accordance with second load balancing configuration in place of the first load balancing configuration.

Abstract: The disclosed embodiment is related to a manufacturing method of a die-formed 3-dimensional plastic impeller of a centrifugal pump and the impeller manufactured thereby, including a mold for twisted blade and a mold for impeller outlet, the mold for twisted blade is configured to form a twisted blade portion of each blade of the impeller, the mold for impeller outlet is configured to form a rear portion of each blade, a hub rim part of the impeller, and a shroud rim part of the impeller so that the hub rim part, the shroud rim part, and the blades are formed in a single piece at the same molding process.

Abstract: Techniques manage cluster resources within an application environment. The techniques involve identifying a group of cluster resources from a plurality of cluster resources of the application environment, the plurality of cluster resources being constructed and arranged to provide a plurality of services. The techniques further involve forming an application slice having the group of cluster resources. The techniques further involve deploying the application slice to provide services. Certain techniques provide a platform that allows operators to build application slices (or application overlays) that are a way of grouping application pods (or containers) based on one or more organizing principles such as velocity of deployment, security, governance, etc.

Abstract: A file reading method includes following operations: determining, by a processor, whether a file in a SIM card is stored in a non-volatile memory; performing, by the processor, a reading process to read the file from the SIM card if the file is not stored in the non-volatile memory; and storing, by the processor, the file into the non-volatile memory.

Abstract: A light color conversion layer structure includes a pixel separation layer over a substrate. The pixel separation layer includes several separating components. The receiving region over the substrate is defined by adjacent separating components. The light color conversion layer structure also includes a first isolation layer continuously formed over the substrate and on the sidewalls of the separating components surrounding the receiving region. The first isolation layer continuously covers the top surface of the substrate and the sidewalls of the separating components adjacent to the receiving region. The light color conversion layer structure also includes a light color conversion unit within the receiving region and on the first isolation layer. The light color conversion layer structure further includes a second isolation layer on the first isolation layer and the light color conversion unit. The second isolation layer covers the first isolation layer and the light color conversion unit.

Abstract: A luminescence conversion material is provided. The luminescence conversion material includes: a hybrid luminescence conversion particle, a first cladding material covering the hybrid luminescence conversion particle, and a second cladding material formed on the first cladding material and covering the first cladding material. The hybrid luminescence conversion particle includes a matrix and a plurality of quantum dots uniformly dispersed in the matrix. The first cladding material includes silicon oxide. The ratio ? (absorbance ratio ?: A939/A1000-1150) of the absorbance at 939 cm?1 (A939) to the absorbance peak at 1000-1150 cm?1 (A1000-1150) in a FTIR spectrum of the first cladding material is less than or equal to 0.8.

Abstract: A pneumatic tool with a forward and reverse rotation structure includes a housing, a retaining member, two push buttons and a positioning pin. The housing includes an installation space. The retaining member is arranged inside the installation space to divide it into two push button accommodating cavities. The two push buttons movably slide inside the two push button accommodating cavities. The retaining member restricts the sliding ranges of the two push buttons. The positioning pin penetrates into the housing to allow the retaining member to be secured by the housing and the positioning pin. Accordingly, the retaining member is secured firmly while allowing it be removed for replacement and repair, the positioning pin is prevented from slippage, and any slipping off or snapping off of components between the sliding block of the push button and the slot wall of the retaining member can also be prevented.

Abstract: A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a semiconductor substrate, a conductive structure and at least one via structure. The conductive structure is disposed on an upper surface of the semiconductor substrate. The at least one via structure is disposed in the semiconductor substrate. A portion of the at least one via structure extends beyond the conductive structure.

Abstract: A frame assembly includes a carrier and a frame. The carrier includes a bottom wall, and inner and outer side walls. The bottom wall is formed with an opening. The inner side wall is located in the opening. The inner and outer side walls extend from the bottom wall along an upright direction. The inner and outer side walls respectively include first inner and outer engaging structures. The outer side wall is spaced from the inner side wall. The frame includes a frame body, and inner and outer lateral walls. The inner and outer lateral walls extend from the frame body and respectively include second inner and outer engaging structures. The outer lateral wall is spaced from the inner lateral wall. The first and second inner engaging structures are engaged with each other, and the first and second outer engaging structures are engaged with each other.

Abstract: A memory device includes a substrate, a metal interconnect structure, a first stack structure, a second stack structure, a first conductive pillar, and a first contact. The metal interconnect structure is located on the substrate. The first stack structure is located on the metal interconnect structure and includes first conductive layers and first insulating layer that alternate with each other, and an insulating structure embedded in the first conductive layers and the first insulating layers. The second stack structure is located on the first stack structure and includes second insulating layers and middle layers that alternate with each other. The first conductive pillar is embedded in the insulating structure to be electrically connected to the metal interconnect structure. The first contact passes through the second insulating layers and the middle layers of the second stack structure to be electrically connected to the first conductive pillar.

Abstract: The present invention discloses a communication method having data transmission sorting mechanism. Whether an object under process is a mobile terminated object is determined. When the object under process is the mobile terminated object, a processing priority is set to be the highest priority, a receiving process is performed and response content is generated when required. When the object under process is a mobile originated object, a transmission process is performed, the processing priority is set according to a processing priority setting of a related transmission entity and the mobile originated object is added to a transmission list. When an object transmission is not able to be performed, the response content is added to a response list. When the object transmission is able to be performed, the response content in the response list is transmitted first and the mobile originated object in the transmission list is transmitted subsequently.

Abstract: An IoT system includes a computing module for controlling an integral function of the system and including an analysis unit and a machine learning unit. The analysis unit is capable of operational analysis and creating a predictive model and creating a predictive model according to the data analyzed. The machine learning unit has an algorithm function to create a corresponding learning model. An IoT module is electrically connected to the computing module to serve as an intermediate role. At least one detection unit is electrically connected to the IoT module and disposed in soil to detect data of environmental and soil conditions and sends the data detected to the computing module for subsequent analysis.

Abstract: A method of fabricating a memory device includes patterning a stacked structure to form a first staircase structure and a second staircase structure; patterning a conductive layer under the stacked structure to form a first slit trench along a first direction; forming a first dielectric layer overlaying the first staircase structure and the second staircase structure and filling into the first slit trench, wherein the first dielectric layer filled in the first slit trench forms a first slit; patterning the first dielectric layer, the stacked structure, and the conductive layer to form multiple second slit trenches, wherein the second slit trenches along a second direction perpendicular to the first direction; performing a replacement process to replace the sacrificial layers with multiple gate conductive layers; and filling a second dielectric layer in the second slit trenches to form multiple second slits.

Abstract: A tank valve system comprises a main valve body, an overfill protection device (OPD), a gauge drive apparatus and a fuel level indicator. The OPD and gauge drive apparatus are configured to both be inserted through a narrow neck of a fuel storage tank prior to connecting the valve body to the neck. The valve body includes a primary fuel channel and a shuttle interface channel. The OPD includes an overfill float driving an overfill shutoff valve for controlling fluid flow from the primary channel into the tank. The gauge drive apparatus includes a gauge float, a shuttle, and an elongated extension body. The gauge float is movable with respect to the extension body between an uppermost position and a lowermost position, thereby driving the shuttle. The shuttle has a gauge actuation portion transportable within the shuttle interface channel to thereby actuate the fuel level indicator.

Abstract: A memory device includes a staircase structure, multiple first plugs, multiple second plugs, and multiple third plugs. The staircase structure includes multiple gate layers and multiple insulating layers alternately stacked on each other, and the staircase structure includes multiple first blocks and multiple second blocks which alternate with each other. The first plugs are disposed in the first blocks, and the first plugs in a same first block are staggered with each other. The second plugs are disposed in the first blocks. The second plugs in a same first block are staggered with each other, and the first plugs and the second plugs in a same first block are staggered with each other. The third plugs are disposed in the second blocks.

Abstract: An electronic device is provided. The electronic device includes a frame, a backlight module, a working panel, and a spacer. The backlight module is disposed in the frame. The working panel is disposed on the frame. The spacer is disposed between the frame and the working panel. At least a portion of the working panel and at least a portion of the spacer are in direct contact with an adhesive.

Abstract: A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a semiconductor substrate, a conductive structure and at least one via structure. The conductive structure is disposed on an upper surface of the semiconductor substrate. The at least one via structure is disposed in the semiconductor substrate. A portion of the at least one via structure extends beyond the conductive structure.