Abstract: A cylinder valve assembly includes an actual on-off control subsystem. An intermediate chamber extends between a probe chamber and proximal chamber of the valve body along a main axis. A control port extends radially of the main axis. A valve pin is received by the intermediate chamber and movable between closed and open positions. A control plug is received by the control port and actuatable between on and off positions. Fluid communication between the proximal and probe chambers through the valve body is enabled when the valve pin is in the open position and the control plug is in the on position. Contrastingly, such fluid communication is prevented if either the valve pin is in the closed position or the control plug is in the off position. The control plug is preferably located in radial alignment along the main axis with at least a portion of the valve pin.

Abstract: A sealless magnetic drive pump features in improving the stiffness of a stationary shaft. More particularly, the metal magnetic drive pump has an anti-corrosion casing liner. The magnetic drive pump is used in manufacture processes related to corrosive fluid. The pump is especially used in a highly corrosive and high-temperature (up to 200° C.) condition to improve the stiffness of a front support. The stationary shaft includes a metal front support integrated with the pump casing at a pump inlet and encapsulated with a resin enclosure made of a fluoropolymer; a rear shaft seat positioned on a sealed bottom side of a containment shell for offering auxiliary support for the stationary shaft; an impeller including a channel for reducing an inlet flow velocity to offer a low NPSHr.

Abstract: An edge structure for multiple layers of devices including stacked multiple unit layers includes first and second stair structures. The first stair structure is at a first direction of the devices where device contacts are formed, including first edge portions of the unit layers at the first direction, of which the borders gradually retreat with increase of level height. The elevation angle from the border of the first edge portion of the bottom unit layer to that of the top one is a first angle. The second stair structure includes second edge portions of the unit layers at a second direction. The variation of border position of the second edge portion with increase of level height is irregular. The elevation angle from the border of the second edge portion of the bottom unit layer to that of the top one is a second angle larger than the first angle.

Abstract: A semiconductor device and method of fabricating the same are provided. The semiconductor device includes a substrate having a trench and an etching stop layer. The etching stop layer is disposed in the substrate and surrounds the bottom surface and a portion of a sidewall of the trench.

Abstract: An integration circuit (IC) simulation method includes: (a) providing a design netlist of a system-level circuit, wherein the system-level circuit comprises a first sub-circuit; (b) providing a first behavior model that is determined based on an operation of the first sub-circuit, wherein the first behavior model is a function of one or more respective behavior-level parameters; (c) incorporating a first variation into each of the one or more behavior-level parameters of the first behavioral model; and (d) simulating the system-level circuit based on the one or more behavior-level parameters of the first behavior model that incorporates the first variation.

Abstract: A control system for an electrolytic cell includes a voltage converter converting an input voltage into a decomposition voltage, a temperature sensor generating a sensed temperature, an electric power sensor generating a sensed voltage, and a control unit storing voltage-temperature characteristics. The control unit determines a voltage that corresponds to the sensed temperature according to one of the voltage-temperature characteristics, and generates, according to a difference between the voltage thus determined and the sensed voltage, a control signal which is provided to the voltage converter such that the decomposition voltage decreases along with increase in the sensed temperature.

Abstract: An interconnect structure including a first dielectric layer, a first conductive layer, a second conductive layer, a capping layer, and a via is provided. The first dielectric layer has a first trench and a second trench. The first conductive layer is located in the first trench. The second conductive layer is located in the second trench, and a top surface of the second conductive layer is lower than a top surface of the first dielectric layer. The capping layer having a via opening exposing a portion of the first conductive layer covers the first dielectric layer, the first conductive layer, and the second conductive layer. The via located on the first conductive layer and the first dielectric layer located between the first conductive layer and the second conductive layer is filled into the via opening and electrically connected to the first conductive layer.

Abstract: A structure of a patterned material layer including separate patterns arranged in rows and columns is described. The separate patterns in at least one row including the outmost row each have a larger dimension in the column direction than the separate patterns in the other rows. The separate patterns in at least one column including the outmost column each have a larger dimension in the row direction than the separate patterns in the other columns.

Abstract: Provided is a method of forming gigantic quantum dots including following steps. A first precursor by mixing zinc acetate (Zn(ac)2), cadmium oxide (CdO), a surfactant, and a solvent together and then performing a first heat treatment is provided. The first precursor includes Zn-complex having the surfactant and Cd-complex having the surfactant. A second precursor containing elements S and Se and trioctylphosphine (TOP) is added into the first precursor to form a reaction mixture. A second heat treatment is performed on the reaction mixture and then cooling the reaction mixture to form the gigantic quantum dots in the reaction mixture.

Abstract: A semiconductor device including a substrate, a spacer and a high-k dielectric layer having a U-shape profile is provided. The spacer located on the substrate surrounds and defines a trench. The high-k dielectric layer having a U-shape profile is located in the trench, and the high-k dielectric layer having a U-shape profile exposes an upper portion of the sidewalls of the trench.

Abstract: A method for controlling a flying object floating in the air includes the steps of: a) maintaining the flying object at a current position in the air; b) determining whether a first user input is received; c) in the affirmative, allowing the flying object to be moved arbitrarily without use of a remote controller and without returning to the current position; d) detecting position information of the flying object; e) determining whether a second user input different from the first user input is received; and f) in the affirmative, repeating steps a) to e) with the current position being updated according to the position information detected in step d).

Abstract: A semiconductor device includes a semiconductor substrate, a circuit unit and an align mark. The circuit unit is disposed on the semiconductor substrate. The align mark includes a first part and a second part respectively formed in the semiconductor substrate and adjacent to two opposite sides of the circuit unit, wherein the first part and the second part depart from each other for a predetermined distance along with a first direction.

Abstract: A mobile device includes a diversity antenna, a radio-frequency antenna, a first wireless communication circuit, a second wireless communication circuit and a first switching circuit. The second wireless communication circuit is electrically connected to the radio-frequency antenna. The first switching circuit is electrically connected to the diversity antenna, the first wireless communication circuit and the second wireless communication circuit. In a first mode, the diversity antenna is conducted to the first wireless communication circuit through the first switching circuit, and the first wireless communication circuit receives a wireless signal through the diversity antenna. In a second mode, the diversity antenna is conducted to the second wireless communication circuit through the first switching circuit, and the second wireless communication circuit executes a multi-input multi-output transmission through the diversity antenna and the radio-frequency antenna.

Abstract: An image ranging system has a light source module having a light source diode and a light source lens, and an image sensing module, placed near the light source, having an image sensing device and an image sensing lens. An optical signal emitted from the light source diode passes through the light source lens with a luminous intensity profile which is characterized by intensity I1 and then reaches an object. A reflection signal is generated by the object. The relationship between the intensity I1 and the emission angle ? of the optical signal is I1=1/cos7 ?. The reflection signal into the image source lens has an incident angle ? the same as the emission angle of the optical signal, and images the object onto the image sensing device. The ratio of the height of object image to the effective focal length of image sensing lens is proportional to sin ?.

Abstract: The present invention utilizes a high-speed intensive mixer in fluidizing type solid phase neutralization reactor to blend solid state alkali hydroxide with any humic acid sources. The final product is a dry humic acid salt. The purpose of this innovative method is to eliminate a series of complicated unit operations commonly employed by the traditional process. These removed steps may include dissolving caustic soda, mixing in a paste like formation, extrusion, granulation, drying, and grinding, etc. The new invention contributes to a simplified flowsheet, resulting in sharply reduced equipment investment, the required plant space, and labor and energy costs. All these factors coupled with increased productivity will drastically lower the overall production cost. Also the reduction of dust pollution will greatly minimize the impact in environmental protection and safety issues.

Abstract: A semiconductor device includes a semiconductor substrate, a circuit unit and an align mark. The circuit unit is disposed on the semiconductor substrate. The align mark includes a first part and a second part respectively formed in the semiconductor substrate and adjacent to two opposite sides of the circuit unit, wherein the first part and the second part depart from each other for a predetermined distance along with a first direction.

Abstract: An edge structure for multiple layers of devices including stacked multiple unit layers includes first and second stair structures. The first stair structure is at a first direction of the devices where device contacts are formed, including first edge portions of the unit layers at the first direction, of which the borders gradually retreat with increase of level height. The elevation angle from the border of the first edge portion of the bottom unit layer to that of the top one is a first angle. The second stair structure includes second edge portions of the unit layers at a second direction. The variation of border position of the second edge portion with increase of level height is irregular. The elevation angle from the border of the second edge portion of the bottom unit layer to that of the top one is a second angle larger than the first angle.

Abstract: Provided are Gigantic quantum dots and a method of forming gigantic quantum dots. Each of the gigantic quantum dots includes a core constituted of CdSe, a shell constituted of ZnS, and an alloy configured between the core and the shell. The core is wrapped by the shell. The alloy constituted of Cd, Se, Zn and S, wherein a content of the Cd and Se gradually decreases from the core to the shell and a content of the Zn and S gradually increases from the core to the shell. A particle size of each of the gigantic quantum dots is equal to or more than 10 nm.

Abstract: A method includes determining a sampling region in a sample space, generating samples in the sampling region without generating samples outside the sampling region, and simulating a performance of a device using the generated samples as input data. The sample space is defined by a plurality of variables associated with the device. Values of the plurality of variables in the sampling region having lower probabilities to meet a specification of the device than values of the plurality of variables outside the sampling region. The method is performed at least partially by at least one processor.