Abstract: An optical device is provided. The optical device includes a substrate, a first photodetector, a waveguide and a nanowell array. The first photodetector is disposed on the substrate. The waveguide is disposed on the first photodetector. The waveguide is in contact with the first photodetector or apart from the first photodetector by a color filter array which is in contact with the waveguide and the first photodetector. The nanowell array is disposed on the waveguide. There is no multi-film filter in the optical device.

Abstract: A purification device for exercise environment is provided and includes a main body, a purification unit, a gas guider and a gas detection module. The purification unit, the gas guider and the gas detection module are disposed in the main body to guide the gas outside the main body through the purification unit for filtering and purifying the gas, and discharge a purified gas. The gas detection module detects particle concentration of suspended particles contained in the purified gas. The gas guider is controlled to operate and export the gas at an airflow rate within 3 minutes. The particle concentration of the suspended particles contained in the purified gas, which is filtered by the purification unit, is reduced to and less than 0.75 ?g/m3. Consequently, the purified gas is filtered, and an exerciser in an exercise environment can breathe with safety.

Abstract: The present disclosure provides an image sensor and control method thereof. The image sensor includes a first transparent conductive layer, a second conductive layer, an optical sensor and a semiconductor substrate. The optical sensor is arranged between the first transparent conductive layer and the second conductive layer, and includes a photoelectric conversion layer, wherein the photoelectric conversion layer has a thickness ranging from 500 to 10000 nm, and the optical sensor has a plurality of absorption spectrum ranges. The semiconductor substrate is below the second conductive layer.

Abstract: A sensor device is provided. The sensor device includes a first substrate, a second substrate, a flow channel and a first reaction group. The second substrate is disposed opposite the first substrate. The flow channel is disposed between the first substrate and the second substrate, and the flow channel includes a fluidic boundary. The first reaction group is disposed on the first substrate and includes a first reaction site, a second reaction site and a third reaction site. The first reaction site is closer to the fluidic boundary than the second reaction site, and a size of the first reaction site is greater than or equal to a size of the second reaction site. The second reaction site is closer to the fluidic boundary than the third reaction site, and the size of the second reaction site is greater than a size of the third reaction site.

Abstract: An optical structure is provided. The optical structure includes a sensor, a bandpass filter and a plurality of protrusions. The bandpass filter is disposed above the sensor. The protrusions are disposed on the bandpass filter. The bandpass filter allows light with a wavelength of 700 nm to 3,000 nm to pass through. The protrusions have a size distribution that controls the phase of the incident light to be between 0 and 2?.

Abstract: A spectrometer includes a plurality of photodetectors, an anti-reflection layer, a grating layer, a distant layer, and a collimator. The anti-reflection layer is disposed on the plurality of photodetectors. The grating layer is disposed above the anti-reflection layer and includes a plurality of grating structures to spread a light into a spectrum to the plurality of photodetectors through the distant layer. The distant layer continuously extends from the grating layer to the anti-reflection layer, the distant layer has a thickness in a range from 400 ?m to 2000 ?m, and a refractive index of the grating layer is greater than a refractive index of the distant layer. The collimator is disposed above the grating layer, in which the collimator is configured to confine an incident angle of the light from a first micro-lens.

Abstract: An aspect of the present invention provides an optical imaging device including a first detecting unit. The first detecting unit includes a plurality of first pixels, a first opaque layer and at least one first micro-lens. The plurality of first pixels respectively has a plurality of first optoelectronic elements. The first opaque layer has at least one opening and is disposed over the plurality of first optoelectronic elements. The at least one first micro-lens is disposed over the first opaque layer, and overlaps at least one of the plurality of first pixels.

Abstract: The image sensor structure includes a substrate, a readout circuit array, a photoelectric layer and a filter layer. The filter layer has a first spectrum defining a first wavelength. The photoelectric layer has a second spectrum defining a second wavelength. The second wavelength is longer than the first wavelength. The first wavelength corresponds to a first line passing through a first point and a second point on a curve of the first spectrum of the filter layer. The first point aligns with an extinction coefficient of 0.9. The second point aligns with an extinction coefficient of 0.1. The second wavelength corresponds to a second line passing through a third point and a fourth point on a curve of the second spectrum of the photoelectric layer. The third point aligns with an extinction coefficient of 0.9. The fourth point aligns with an extinction coefficient of 0.1.

Abstract: An image sensor is provided. The image sensor includes a substrate having a first region and a second region adjacent to each other; and a first photoelectric conversion component disposed on the first region of the substrate, and the first photoelectric conversion component includes: a first metal layer formed on the substrate; a first photoelectric conversion layer formed on the first metal layer; and a second metal layer formed on the first photoelectric conversion layer.

Abstract: An image sensor includes a group of sensor units, a color filter layer disposed within the group of sensor units, and a dielectric structure and a metasurface disposed corresponding to the color filter layer. The metasurface includes a plurality of peripheral nanoposts located at corners of the group of sensor units from top view, respectively, a central nanopost enclosed by the plurality of peripheral nanoposts, and a filling material laterally surrounding the plurality of peripheral nanoposts and the central nanopost. The central nanopost is offset from a center point of the group of sensor units by a distance from top view.

Abstract: An optical device is provided. The optical device has a central region and a first-type region surrounding the central region. The first-type region includes a first sub-region and a second sub-region between the central region and the first sub-region. The optical device includes a substrate. The optical device also includes a meta-structure disposed on the substrate. The meta-structure includes first pillars in the first sub-region and second pillars in the second sub-region. In the cross-sectional view of the optical device along the radial direction of the optical device, two adjacent first pillars have a first pitch, two adjacent second pillars have a second pitch, and the second pitch is greater than the first pitch.

Abstract: The present disclosure provides an image sensor and control method thereof. The image sensor includes a first transparent conductive layer, a second conductive layer, an optical sensor and a semiconductor substrate. The optical sensor is arranged between the first transparent conductive layer and the second conductive layer, and includes a photoelectric conversion layer, wherein the photoelectric conversion layer has a thickness ranging from 500 to 10000 nm, and the optical sensor has a plurality of absorption spectrum ranges. The semiconductor substrate is below the second conductive layer.

Abstract: An optical device is provided. The optical device includes a time-of-flight (TOF) sensor array, a photon conversion thin film, and a light source. The photon conversion thin film is disposed above the time-of-flight sensor array. The light source emits light with a first wavelength towards the photon conversion thin film to be converted into light with a second wavelength received by the time-of-flight sensor array. The second wavelength is longer than the first wavelength.

Abstract: A spectrometer includes a plurality of photodetectors, an anti-reflection layer, a grating layer, a distant layer, and a collimator. The anti-reflection layer is disposed on the plurality of photodetectors. The grating layer is disposed above the anti-reflection layer and includes a plurality of grating structures to spread a light into a spectrum to the plurality of photodetectors through the distant layer. The distant layer continuously extends from the grating layer to the anti-reflection layer, the distant layer has a thickness in a range from 400 ?m to 2000 ?m, and a refractive index of the grating layer is greater than a refractive index of the distant layer. The collimator is disposed above the grating layer, in which the collimator is configured to confine an incident angle of the light from a first micro-lens.

Abstract: The spectrometer includes a lightguide substrate, an upper grating layer, a lower grating layer, an image sensor, and a readout circuit. The upper grating layer is disposed on the lightguide substrate and configured to receive a light. The upper grating layer includes a first grating structure, a second grating structure, and a third grating structure, and the first, second, and third grating structures have different grating periods. The lightguide substrate is configured to diffract the light when the light propagates into the lightguide substrate, such that multiple diffraction lights are formed and each of the multiple diffraction lights has different wavelengths and different optical path. The lower grating layer is disposed under the lightguide substrate and configured to emit the multiple diffraction lights. The image sensor is disposed under the lower grating layer. The readout circuit is disposed under the image sensor.

Abstract: The spectrometer includes a lightguide substrate, an upper grating layer, a lower grating layer, an image sensor, and a readout circuit. The upper grating layer is disposed on the lightguide substrate and configured to receive a light. The upper grating layer includes a first grating structure, a second grating structure, and a third grating structure, and the first, second, and third grating structures have different grating periods. The lightguide substrate is configured to diffract the light when the light propagates into the lightguide substrate, such that multiple diffraction lights are formed and each of the multiple diffraction lights has different wavelengths and different optical path. The lower grating layer is disposed under the lightguide substrate and configured to emit the multiple diffraction lights. The image sensor is disposed under the lower grating layer. The readout circuit is disposed under the image sensor.

Abstract: The optical system includes a projector, a deflector, a polarizer, a first grating coupler structure, and a second grating coupler structure. The projector emits three beams having different wavelengths. The deflector is disposed below the projector and is configured to change incident angles of the three beams and to focus the three beams at the same region of the first grating coupler structure. The first grating coupler structure is below the deflector and is configured to couple the three beams into a light-guide lens such that the three beams travel the same optical path within the light-guide lens. The light-guide lens is connected to the first grating coupler structure and is configured to transmit the three beams. The polarizer is disposed between the projector and the deflector and is configured to filter out transverse electric (TE) modes or transverse magnetic (TM) modes of the three beams.

Abstract: An optical device includes a first region and a second region surrounding the first region. The optical device includes a substrate. The optical device also includes a first meta-structure disposed on the substrate and has a plurality of first peripheral pillars in the second region. The optical device further includes a second meta-structure disposed on the substrate and has a plurality of second peripheral pillars corresponding to the plurality of first peripheral pillars. Each of the second peripheral pillars has a first shifting distance with respect to a corresponding first peripheral pillar in the direction extending from the center of the optical device to the edge of the optical device.

Abstract: An optical device is provided. The optical device includes a time-of-flight (TOF) sensor array, a photon conversion thin film, and a light source. The photon conversion thin film is disposed above the time-of-flight sensor array. The light source emits light with a first wavelength towards the photon conversion thin film to be converted into light with a second wavelength received by the time-of-flight sensor array. The second wavelength is longer than the first wavelength.

Abstract: A biosensor is provided. The biosensor includes a substrate, a first photodiode, a second photodiode, an angle-sensitive filter, and an immobilization layer. The first photodiode and the second photodiode are disposed in the substrate and define a first pixel and a second pixel, respectively. The first pixel and the second pixel receive a light. The angle-sensitive filter is disposed on the substrate. The immobilization layer is disposed on the angle-sensitive filter.