Abstract: An image sensing device is provided. The image sensing device includes a substrate having a pixel array with a plurality of pixels. A light guide structure is disposed over the substrate, forming a plurality of light pipes and a plurality of reflecting portions surrounding the light pipes. The light pipes are aligned with the pixels of the pixel array. The invention also provides a method for fabricating the image sensing device.

Abstract: A color filter array having a lower density of the color blue is provided. The color filter array includes: a plurality of color filter units arranged in a 3×3 array. The color filter units include a blue filter and a plurality of other filters, and the blue filter is disposed in the center of each 3×3 array, wherein a number of the blue filter is fewer than that of each kind of the other filters in each 3×3 array.

Abstract: An image sensor includes a sensing layer for sensing a light beam and a number of pixel groups. Each of the pixel groups includes a yellow filter unit allowing a green light component and a red light component of the light beam to pass through, a green filter unit allowing the green light component of the light beam to pass through, and a blue filter unit allowing a blue light component of the light beam to pass through.

Abstract: A detection device for specimens includes an image sensor, a light-guiding structure, a carrier, and a light source. The light-guiding structure is disposed on the image sensor, and includes a light-guiding layer and a top layer. The light-guiding layer is disposed on the image sensor. The top layer is disposed on the light-guiding layer. The carrier is disposed on the light-guiding structure. The carrier has a number of wells arranged in an array located over the guiding portions. Each of the wells is configured to receive a specimen.

Abstract: An image sensor is provided. The image sensor includes a substrate having a first region and a second region adjacent to each other; and a first photoelectric conversion component disposed on the first region of the substrate, and the first photoelectric conversion component includes: a first metal layer formed on the substrate; a first photoelectric conversion layer formed on the first metal layer; and a second metal layer formed on the first photoelectric conversion layer.

Abstract: An image-sensor structure is provided. The image-sensor structure includes a substrate with a plurality of photoelectric conversion units formed therein, a plurality of color filters formed above the substrate, wherein the color filters are divided into red color filters, green color filters and blue color filters, a plurality of microlenses correspondingly formed above the color filters, a transparent material layer formed above the microlenses, a first filter blocking infrared (IR) light formed above the transparent material layer, a second filter allowing transmission of visible light formed above the first filter, and a lens module formed above the second filter.

Abstract: An optical sensor includes a sensing layer, a color filter, and a grid structure. The sensing layer includes a photodiode. The color filter includes a lower portion disposed on the sensing layer, and an upper portion disposed on the lower portion. The upper portion includes a bottom surface connected to the lower portion, a first inclined surface inclined relative to the bottom surface, and a second inclined surface that is opposite to the first inclined surface and inclined relative to the bottom surface. The grid structure surrounds the upper portion. Between the first inclined surface and the bottom surface is a first acute angle, and between the second inclined surface and the bottom surface is a second acute angle.

Abstract: An image-sensing device includes a semiconductor substrate, a passive layer, and a light-collecting element. The semiconductor substrate includes a photo-sensing element, and the passive layer is disposed over the semiconductor substrate. The light-collecting element is disposed over the passive layer, and includes first, second and third loops. The first loop has a first width. The second loop surrounds the first loop and has a second width that is less than the first width. The third loop surrounds the first and second loops, and has a third width that is less than the second width. The light-collecting element aligns with the photo-sensing element, and the first, second, and third loops include different refractive indices.

Abstract: An optical sensor includes a sensing layer, a color filter, and a grid structure. The sensing layer includes a photodiode. The color filter includes a lower portion disposed on the sensing layer, and an upper portion disposed on the lower portion. The upper portion includes a bottom surface connected to the lower portion, a first inclined surface inclined relative to the bottom surface, and a second inclined surface that is opposite to the first inclined surface and inclined relative to the bottom surface. The grid structure surrounds the upper portion. Between the first inclined surface and the bottom surface is a first acute angle, and between the second inclined surface and the bottom surface is a second acute angle.

Abstract: An image-sensor structure is provided. The image-sensor structure includes a plurality of color filter patterns divided into a first unit including one green filter, a second unit including one green filter, a third unit including one blue filter, and a fourth unit including one red filter, wherein the first unit is adjacent to the second unit; and a plurality of microlenses formed above the color filter patterns, wherein the microlenses are divided into a first microlens unit having one microlens above the one green filter of the first unit and the one green filter of the second unit, a second microlens unit above the one blue filter of the third unit, and a third microlens unit above the one red filter of the fourth unit.

Abstract: An image-sensing device includes a semiconductor substrate, a passive layer, and a light-collecting element. The semiconductor substrate includes a photo-sensing element, and the passive layer is disposed over the semiconductor substrate. The light-collecting element is disposed over the passive layer, and includes first, second and third loops. The first loop has a first width. The second loop surrounds the first loop and has a second width that is less than the first width. The third loop surrounds the first and second loops, and has a third width that is less than the second width. The light-collecting element aligns with the photo-sensing element, and the first, second, and third loops include different refractive indices.

Abstract: An image sensor includes a sensing layer, a filter unit, and a conductive layer. The filter unit is disposed on the sensing layer. The conductive layer surrounds the filter unit, and is disposed on the sensing layer. Therefore, light passing through the filter unit and falling on an adjacent sensing unit is minimized, and the image quality of the image sensor is improved.

Abstract: A color filter array having a lower density of the color blue is provided. The color filter array includes: a plurality of color filter units arranged in a 3×3 array. The color filter units include a blue filter and a plurality of other filters, and the blue filter is disposed in the center of each 3×3 array, wherein a number of the blue filter is fewer than that of each kind of the other filters in each 3×3 array.

Abstract: An image-sensor structure is provided. The image-sensor structure includes a substrate with a plurality of photoelectric conversion units formed therein, a plurality of color filters formed above the substrate, wherein the color filters are divided into red color filters, green color filters and blue color filters, a plurality of microlenses correspondingly formed above the color filters, a transparent material layer formed above the microlenses, a first filter blocking infrared (IR) light formed above the transparent material layer, a second filter allowing transmission of visible light formed above the first filter, and a lens module formed above the second filter.

Abstract: An image-sensor structure is provided. The image-sensor structure includes a substrate, a plurality of photoelectric conversion units formed in the substrate, a plurality of separated color filters formed above the substrate and the photoelectric conversion units, a first light shielding layer surrounding the separated color filters, and a first conductive polymer element blended with a low-refractive-index component filled between the individual separated color filters and between the all separated color filters and the first light shielding layer, wherein the first conductive polymer element is electrically connected to a grounding pad.

Abstract: An image sensor includes a sensing layer for sensing a light beam and a number of pixel groups. Each of the pixel groups includes a yellow filter unit allowing a green light component and a red light component of the light beam to pass through, a green filter unit allowing the green light component of the light beam to pass through, and a blue filter unit allowing a blue light component of the light beam to pass through.

Abstract: A detection device for specimens includes an image sensor, a light-guiding structure, and a carrier. The image sensor includes a sensing area and a non-sensing area around the sensing area. The light-guiding structure is disposed on the image sensor. The light-guiding structure includes a central guiding portion, a reflection layer, and first guiding portions. The central guiding portion is located over the sensing area. The reflection layer is disposed on the image sensor and includes channels located over the non-sensing area. The first guiding portions are located in the channels, and connected to the central guiding portion and a side surface of the light-guiding structure. The carrier is disposed on the light-guiding structure, and has wells located over the sensing area. Each of the wells is configured to receive a specimen.

Abstract: A detection device for specimens includes an image sensor, a light-guiding structure, a carrier, and a light source. The light-guiding structure is disposed on the image sensor, and includes a light-guiding layer and a top layer. The light-guiding layer is disposed on the image sensor. The top layer is disposed on the light-guiding layer. The carrier is disposed on the light-guiding structure. The carrier has a number of wells arranged in an array located over the guiding portions. Each of the wells is configured to receive a specimen.

Abstract: An image sensor includes a sensing layer, a filter unit, and a conductive layer. The filter unit is disposed on the sensing layer. The conductive layer surrounds the filter unit, and is disposed on the sensing layer. Therefore, light passing through the filter unit and falling on an adjacent sensing unit is minimized, and the image quality of the image sensor is improved.

Abstract: An image-sensor structure is provided. The image-sensor structure includes a substrate, a plurality of photoelectric conversion units formed in the substrate, a plurality of separated color filters formed above the substrate and the photoelectric conversion units, a first light shielding layer surrounding the separated color filters, and a first conductive polymer element blended with a low-refractive-index component filled between the individual separated color filters and between the all separated color filters and the first light shielding layer, wherein the first conductive polymer element is electrically connected to a grounding pad.