Abstract: A method for fabricating a dual-damascene copper structure includes providing a semiconductor substrate having a dielectric layer thereon and a dual-damascene hole positioned in the dielectric layer, wherein a portion of the semiconductor substrate is exposed in the dual-damascene hole. A PVD process and an atomic CVD process are sequentially performed to form a substrate-protecting layer and a tantalum nitride layer in the dual-damascene hole. And then a copper layer is formed in the dual-damascene hole.

Abstract: A method of forming a material film is provided. A chemical vapor deposition (CVD) chamber including therein a showerhead coupled to a gas source and a pedestal coupled to a heater is provided. The showerhead is coupled to a radio frequency (RF) power source. A substrate is positioned on the pedestal. The substrate is then heated by the heater. A tantalum-containing organic metal precursor gas is flowed into the CVD chamber through the showerhead with the RF power source being off, thereby depositing a material film on the heated substrate. Thereafter the RF power source is turned on to output a RF power. An inert gas is flowed into the chamber. The material film in-situ plasma treated within the CVD chamber by providing the RF power to the inert gas. The substrate is removed out of the CVD chamber.

Abstract: A method for preventing contamination of a heater which is used for heating a wafer with a wafer bevel contains not directly heating the wafer bevel when using the heater to heat the wafer.

Abstract: A method for fabricating a dual-damascene copper structure includes providing a semiconductor substrate having a dielectric layer thereon and a dual-damascene hole positioned in the dielectric layer, wherein a portion of the semiconductor substrate is exposed in the dual-damascene hole. A PVD process and an atomic CVD process are sequentially performed to form a substrate-protecting layer and a tantalum nitride layer in the dual-damascene hole. And then a copper layer is formed in the dual-damascene hole.

Abstract: A heater for heating a wafer is applied in a process chamber. The heater has an upper surface for positioning a wafer to heat the wafer, wherein a connection area of the upper surface and the wafer is less than the area of the wafer when the wafer is positioned on the upper surface of the heater.

Abstract: A semiconductor manufacturing equipment comprising a canopy, a semiconductor processing device, a load port, a robot arm or a transferring device, an air vent, and a chemical filter to remove chemical substance in the air. A HEPA or ULPA filter may be included to filter off particulates. The load port may have a standardized mechanical interface (SMIF) suitable for SMIF pods. In the case that the semiconductor processing device is a copper processing tool, an advantage of preventing copper from corrosion is attained in the present invention by removing chemical substance.

Abstract: A method of forming a material film is provided. A chemical vapor deposition (CVD) chamber including therein a showerhead coupled to a gas source and a pedestal coupled to a heater is provided. The showerhead is coupled to a radio frequency (RF) power source. A substrate is positioned on the pedestal. The substrate is then heated by the heater. A tantalum-containing organic metal precursor gas is flowed into the CVD chamber through the showerhead with the RF power source being off, thereby depositing a material film on the heated substrate. Thereafter the RF power source is turned on to output a RF power. An inert gas is flowed into the chamber. The material film in-situ plasma treated within the CVD chamber by providing the RF power to the inert gas. The substrate is removed out of the CVD chamber.

Abstract: A method of fabricating a self-aligned landing via is provided. A plurality of word lines and active areas are laid out on a semiconductor substrate. Two neighboring word lines pass through the active area to form both a landing via region at the portion overlapping with the active area and a gap-filling region at the portion outside the active area. Then, a spacer is formed on either side of the word line. The spacer is thick enough to fill the gap-filling region but not enough to fill the landing via region so as to form a self-aligned landing via hole. Finally, a conductive layer is filled within the landing via hole to form a landing via.

Abstract: A computer operated method comprises a sequence of steps for management of data of a manufacturing operation with workstations in several different functional locations. The manufacturing operation is configured to perform a specific task at each location. Data for lots of work located in containers in the plant is read. The data which has been read is sent through a polling engine for transmission to be collected in a database system. The collected data is then supplied from the database system to a plurality of programmable workstations which are linked to the database by lines in a star network.