Abstract: An assembled wearable electronic device includes a first body, a second body and an engaging assembly. The first body has a primary system for providing the independent operation of the first body and producing a related first data. The second body has a secondary system and a fixing assembly. The secondary system is for providing the independent operation of the second body and producing a related second data. The engaging assembly is disposed at one of the first and second bodies. When the engaging assembly is located at a first position, the first and second bodies contact each other to be combined through the engaging assembly. When the engaging assembly moves to a second position, the first and second bodies are configured to be separated from each other. When the first and second bodies are connected to each other, the second data is read by the primary system.

Abstract: A device includes a substrate, a semiconductor fin over the substrate, and a gate dielectric layer on a top surface and sidewalls of the semiconductor fin. A gate electrode is spaced apart from the semiconductor fin by the gate dielectric layer. The gate electrode includes a top portion over and aligned to the semiconductor fin, and a sidewall portion on a sidewall portion of the dielectric layer. The top portion of the gate electrode has a first work function, and the sidewall portion of the gate electrode has a second work function different from the first work function.

Abstract: A device includes a substrate, a semiconductor fin over the substrate, and a gate dielectric layer on a top surface and sidewalls of the semiconductor fin. A gate electrode is spaced apart from the semiconductor fin by the gate dielectric layer. The gate electrode includes a top portion over and aligned to the semiconductor fin, and a sidewall portion on a sidewall portion of the dielectric layer. The top portion of the gate electrode has a first work function, and the sidewall portion of the gate electrode has a second work function different from the first work function.

Abstract: An N work function metal for a gate stack of a field effect transistor (FinFET) and method of forming the same are provided. An embodiment FinFET includes a fin supported by a semiconductor substrate, the fin extending between a source and a drain and having a channel region, and a gate stack formed over the channel region of the fin, the gate stack including an N work function metal layer comprising an oxidation layer on opposing sides of a tantalum aluminide carbide (TaAlC) layer.

Abstract: The position control mechanism is provided to be pivotally mounted on a side of a full-faced and open-faced helmet. The position control mechanism includes at least a helmet body, at least a pair of control units, at least a chin guard and at least a visor plate. A pair of inserting feet are disposed in each side of the chin guard and a pair of inserting feet disposed on a fixing unit in each inward hollow of the chin guard, so as to move each adjusting article to be operated to adjust the positions of the chin guard and the visor plate of the helmet.

Abstract: Systems and methods are described for providing network route redundancy through Layer 2 devices, such as a loop free Layer 2 network having a plurality of switching devices. A virtual switch is coupled to the loop free Layer 2 network, the virtual switch having two or more switches configured to transition between master and backup modes to provide redundant support for the loop free Layer 2 network, the switches communicating their status through use of a plurality of redundancy control packets. The system also includes means for allowing the redundancy control packets to be flooded through the Layer 2 network. The means may include time-to-live data attached to the redundancy control packet which is decremented only when the packets are transferred through devices which are configured to recognize the protocol used in redundancy control packets.

Abstract: A method of manufacturing a solar cell includes the following steps. An ion implantation process is performed to a first surface of a substrate to form a first doping layer. Then, the ion implantation process is performed to a second surface of the substrate to form a second doping layer. After that, an annealing process is performed to the structure formed by the substrate, the first doping layer and the second doping layer, and forming a first passivation layer on the first doping layer and a second passivation layer on the second doping layer by the annealing process. A third passivation layer is formed on the first passivation layer formed after the annealing process and a fourth passivation layer is formed on the second passivation layer formed after the annealing process. Afterward, conductive electrodes are formed on the third passivation layer and the fourth passivation layer, respectively.

Abstract: Systems and methods are described for providing network route redundancy through Layer 2 devices, such as a loop free Layer 2 network having a plurality of switching devices. A virtual switch is coupled to the loop free Layer 2 network, the virtual switch having two or more switches configured to transition between master and backup modes to provide redundant support for the loop free Layer 2 network, the switches communicating their status through use of a plurality of redundancy control packets. The system also includes means for allowing the redundancy control packets to be flooded through the Layer 2 network. The means may include time-to-live data attached to the redundancy control packet which is decremented only when the packets are transferred through devices which are configured to recognize the protocol used in redundancy control packets.

Abstract: A shielding assembly includes a frame including a main body, the main body defining at least one retaining hole; and a cover including a main board, the main panel including retaining elements and rims. The number of the retaining elements is the same as the number of the retaining holes, each rim protruding outwardly from a distal end of one of retaining elements. Each retaining element passes through one of the retaining holes, and each rim is latched with the portions of the frame surrounding the retaining holes.

Abstract: A device includes a substrate, a semiconductor fin over the substrate, and a gate dielectric layer on a top surface and sidewalls of the semiconductor fin. A gate electrode is spaced apart from the semiconductor fin by the gate dielectric layer. The gate electrode includes a top portion over and aligned to the semiconductor fin, and a sidewall portion on a sidewall portion of the dielectric layer. The top portion of the gate electrode has a first work function, and the sidewall portion of the gate electrode has a second work function different from the first work function.

Abstract: The system, method, and article of manufacture of the present invention allows multiple customers connected to a common external network to each implement a layer 2 redundancy protocol, such as the spanning tree protocol, in order to prevent layer 2 loops. Accordingly, a method is presented for providing an independent loop free layer 2 topology between a external network and a customer network comprising tagging control packets originating on the customer network with a unique identifier and tunneling the control packets received from the customer network between a plurality of boundary interface devices at the external network such that the control packets are routed back to the customer network based on the presence of the unique identifier in the control packet. The layer 2 redundancy protocol on the customer network converges based at least in part on the presence of control packets appearing on more than one port on the customer network.

Abstract: A solar energy cell includes a photoelectric conversion layer, an anti-reflection layer and a plurality of electrical conductive channels. The anti-reflection layer is disposed on the photoelectric conversion layer. The electrical conductive channels are disposed on the anti-reflection layer and electrically connected with the photoelectric conversion layer, wherein the electrical conductive channels include a conductive paste and pigments to enable a color thereof to be substantially the same as a color of the anti-reflection layer.

Abstract: The position control mechanism is provided to be pivotally mounted on a side of a full-faced and open-faced helmet. The position control mechanism includes at least a helmet body, at least a pair of control units, at least a chin guard and at least a visor plate. A pair of inserting feet are disposed in each side of the chin guard and a pair of inserting feet disposed on a fixing unit in each inward hollow of the chin guard, so as to move each adjusting article to be operated to adjust the positions of the chin guard and the visor plate of the helmet.

Abstract: A computer includes an application system, a storage device and a basic input output system (BIOS). The application system can be respectively coupled to the storage device and the BIOS, set at least a multimedia file as a preset playing file according to an input instruction and store the preset playing file into the storage device. The application system can further generate a log file according to the input instruction and the storage position of the preset playing file, wherein the log file is sent to the BIOS. The BIOS has a file access module, so that the BIOS can acquire the preset playing file from the storage device according to the log file for playing during booting the computer.

Abstract: A method of manufacturing a solar cell includes the following steps. An ion implantation process is performed to a first surface of a substrate to form a first doping layer. Then, the ion implantation process is performed to a second surface of the substrate to form a second doping layer. After that, an annealing process is performed to the structure formed by the substrate, the first doping layer and the second doping layer, and forming a first passivation layer on the first doping layer and a second passivation layer on the second doping layer by the annealing process. A third passivation layer is formed on the first passivation layer formed after the annealing process and a fourth passivation layer is formed on the second passivation layer formed after the annealing process. Afterward, conductive electrodes are formed on the third passivation layer and the fourth passivation layer, respectively.

Abstract: A cutter adapter includes a holder having a receiving portion for inserting a cutter therein; a sleeve sleeved onto the holder and having an annular bevel; a lock pin inserted into the holder and having an active end and a passive end, the passive end being squeezed by the annular bevel when the sleeve is moved, the active end being inserted into the cutter when the passive end is squeezed; and a biasing pin located in the receiving portion and pushed by a spring mounted in the receiving portion. In this way, when intending to mount the cutter to the cutter adapter, the user only needs to insert the cutter into the receiving portion to force the biasing pin to disengage from the lock pin, the lock pin being forced by the annular bevel to insert the active end into the receiving portion to hold the cutter.

Abstract: Systems and methods are described for providing network route redundancy through Layer 2 devices, such as a loop free Layer 2 network having a plurality of switching devices. A virtual switch is coupled to the loop free Layer 2 network, the virtual switch having two or more switches configured to transition between master and backup modes to provide redundant support for the loop free Layer 2 network, the switches communicating their status through use of a plurality of redundancy control packets. The system also includes means for allowing the redundancy control packets to be flooded through the Layer 2 network. The means may include time-to-live data attached to the redundancy control packet which is decremented only when the packets are transferred through devices which are configured to recognize the protocol used in redundancy control packets.

Abstract: The position controlling mechanism is provided to be pivotally mounted on a side of a full-faced helmet for adjusting the positions of a chin guard and a visor plate of the helmet. The position controlling mechanism includes at least a chin guard, at least a spring, at least a rotor, at least a visor plate, at least an interaction gear, at least a transmission gear, at least a rotative element, at least an elastic ring and at least a visor plate base. After the position controlling mechanism being assembled, the rotor is capable of being rotated to transmit rotation to a gear chain, so as for the chin guard and the visor plate to be moved between activated and retracted positions.

Abstract: A method of fabricating a thin film transistor is disclosed. First, a substrate is provided and a patterned polysilicon layer is formed on the substrate. A metal layer is formed on the patterned polysilicon layer. Then, a portion of the metal layer is removed so that the remaining metal layer beside the patterned polysilicon layer forms a source and a drain. A gate insulation layer is formed on the substrate to cover the source, the drain and the patterned polysilicon layer. A gate is formed on the gate insulation layer over the patterned polysilicon layer.

Abstract: An exemplary film-removing device for removing a protecting film from a workpiece includes a main body and a film-removing mechanism. The film-removing mechanism includes a suspending arm and a roller. The suspending arm has a first end rotatably connected to the main body. The roller is rotatably connected to a second end, opposite to the first end, of the suspending arm. The roller is driven to rotate by movement of the workpiece.