Abstract: Apparatus, methods, and computer-readable media for facilitating network slice based reselection using machine learning are disclosed herein. An example method for wireless communication at a UE includes predicting a next active PDU session of two or more PDU sessions based on next connection setup times for each PDU session. The next connection setup times may be estimated based on connection setup events occurring over a period. The example method also includes selecting a frequency channel to camp on based on the next active PDU session.

Abstract: The present disclosure generally relates to an electronic assembly. The electronic assembly may include a semiconductor package including a first surface, an opposing second surface, and a side wall. The electronic assembly may also include a printed circuit board coupled to the second surface of the semiconductor package. The electronic assembly may further include at least one passive component array including one or more passive components at least partially embedded in a mold layer, each passive component further including a first terminal and a second terminal, wherein the first terminal of the passive component may be coupled to the printed circuit board and the passive component array may be attached to the side wall of the semiconductor package.

Abstract: The present invention is related to a thin heat dissipation device and a method for manufacturing the same. The device of the present invention mainly comprises a hollow body having an enclosed chamber and a working fluid with which the enclosed chamber is filled. The enclosed chamber comprises a first fluid channel and a second fluid channel. The first and second fluid channels extend in the longitudinal direction of the hollow body, are juxtaposed in the width direction of the hollow body and communicated with each other, and an interface between the first fluid channel and the second fluid channel has a height of about 0.1 mm or less. As such, a novel capillary structure which is capable of greatly reducing the entire thickness, enhancing heat transfer efficiency and reducing cost and which is reliable and durable is provided.

Abstract: An antenna structure with wide radiation bandwidth in a reduced physical space includes a metallic housing, a first feed portion, and a second feed portion. The metallic housing includes a metallic side frame and a metallic back board. The metallic side frame defines a slot, and first and second gaps. The metallic side frame between the first gap and one end of the slot forms a first radiation portion. The second gap divides the first radiation portion into first and second radiation sections. The first feed portion feeds current and signal to the first radiation section, and the first radiation section works in a GPS mode and a WIFI 2.4 GHz mode. The second feed portion feeds current and signal to the second radiation section, and the second radiation section works in a WIFI 5 GHz mode.

Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip may comprise a first metal line disposed over a substrate. A via may be disposed directly over a top of the first metal line and the via may comprise a first lower surface and a second lower surface above the first lower surface. A first dielectric structure may be disposed laterally adjacent to the first metal line and may be disposed along a sidewall of the first metal line. A first protective etch-stop structure may be disposed directly over a top of the first dielectric structure and the first protective etch-stop structure may vertically separate the second lower surface of the via from the top of the first dielectric structure.

Abstract: An inductor is disclosed, the inductor comprising: a T-shaped magnetic core, being made of a material comprising an annealed soft magnetic metal material and having a base and a pillar integrally formed with the base, wherein ?C×Hsat?1800, where ?C is a permeability of the T-shaped magnetic core, and Hsat (Oe) is a strength of the magnetic field at 80% of ?C0, where ?C0 is the permeability of the T-shaped magnetic core when the strength of the magnetic field is 0.

Abstract: A power converter that properly copes with the wiring defects on a feedback path is shown. According to a control signal, a power driver couples an input voltage to an energy storage element to provide an output voltage that is down-converted from the input voltage. The output voltage is further converted into a feedback voltage by a feedback circuit, and is entered to an error amplifier with a reference voltage for generation of an amplified error. A control signal generator generates the control signal of the power driver according to the amplified error. The power converter specifically has a comparator, which is enabled in a soft-start stage till the output voltage reaches a stable status. The comparator compares the amplified error with a critical value. When the amplified error exceeds the critical value, the input voltage is disconnected from the energy storage element.

Abstract: Provided are a negative electrode active material which includes negative electrode active material particles which includes a silicon oxide (SiOx, 0<x?2); and at least one lithium silicate selected from Li2SiO3, Li2Si2O5, and Li4SiO4 in at least a part of the silicon oxide. The negative electrode active material particles have a maximum peak position by a Raman spectrum of more than 460 cm?1 and less than 500 cm?1. Also provided are a method of preparing the same, and a negative electrode and a lithium secondary battery including the negative electrode active material.

Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a user equipment (UE) may determine, via a first subscription of the UE, a trigger event for a conditional handover of the UE from a source network entity to a target network entity. The UE may determine, based at least in part on the trigger event, that a target band associated with the target network entity is not compatible with a serving band associated with a second subscription of the UE. The UE may store the trigger event for the conditional handover in a buffer of the UE. The UE may perform an action related to the conditional handover based at least in part on a condition being satisfied. Numerous other aspects are described.

Abstract: The present disclosure provides a tunable porous fibrous scaffold composition, comprising one or more modified glycosaminoglycans; and (ii) one or more extracellular matrix (ECM) proteins. The present disclosure also provides methods for preparing the tunable porous fibrous scaffold composition described herein.

Abstract: A semiconductor device including a transistor on a substrate; an interlayer insulating layer on the transistor; a first metal-containing layer on the interlayer insulating layer; and a second metal-containing layer on the first metal-containing layer, wherein the second metal-containing layer includes a resistor, the resistor includes a first insulating layer on the first metal-containing layer; a resistor metal layer on the first insulating layer; and a second insulating layer on the resistor metal layer, and the resistor metal layer includes a recessed side surface.

Abstract: A curved prism array applied to an infrared sensor wherein: the infrared sensor comprises at least an infrared sensing element which is used in detecting infrared signals within a solid-angled FOV and installed inside the curved prism array; the curved prism array has an incident focal plane and a plurality of emergent focal planes, both of which are not parallel with each other, such that infrared signals beyond the solid-angled FOV are received by the incident focal plane, refracted through one of the emergent focal planes and guided toward the infrared sensing element for expansion of the solid-angled FOV of the infrared sensing element.

Abstract: Semiconductor device structures having gate structures with tunable threshold voltages are provided. Various geometries of device structure can be varied to tune the threshold voltages. In some examples, distances from tops of fins to tops of gate structures can be varied to tune threshold voltages. In some examples, distances from outermost sidewalls of gate structures to respective nearest sidewalls of nearest fins to the respective outermost sidewalls (which respective gate structure overlies the nearest fin) can be varied to tune threshold voltages.

Abstract: A copolymer, a film composition and a composite material employing the same are provided. The copolymer is a copolymerization product of a composition, wherein the composition includes a monomer (a), a monomer (b) and a monomer (c). The monomer (a) is a compound having a structure represented by Formula (I), the monomer (b) is a compound having a structure represented by Formula (II), and the monomer (c) is a compound having a structure represented by Formula (III) wherein R1, R2, R3, R4, R5 and R6 are as defined in specification.

Abstract: A database management engine provides a user interface that allows users to access and modify employee information in a database. The database includes entries for employees, and each database entry includes identifying information about the associated employee. A user can request to modify data within database entries, for instance in order to update information associated with an employee. Responsive to the request, the database management engine identifies liabilities associated with the database modification stemming from associated tax laws. Based on the identified tax liabilities, the engine computes the aggregate tax liability owed by the employer and/or employee. Before modifying a database entry, the engine modifies the user interface to include interface elements detailing the computed aggregate tax liability. The user explicitly can be required to confirm the database modification in view of the aggregate tax liability.

Abstract: Examples of an integrated circuit with an interconnect structure and a method for forming the integrated circuit are provided herein. In some examples, the method includes receiving a workpiece that includes a substrate and an interconnect structure. The interconnect structure includes a first conductive feature disposed within a first inter-level dielectric layer. A blocking layer is selectively formed on the first conductive feature without forming the blocking layer on the first inter-level dielectric layer. An alignment feature is selectively formed on the first inter-level dielectric layer without forming the alignment feature on the blocking layer. The blocking layer is removed from the first conductive feature, and a second inter-level dielectric layer is formed on the alignment feature and on the first conductive feature. The second inter-level dielectric layer is patterned to define a recess for a second conductive feature, and the second conductive feature is formed within the recess.

Abstract: Disclosed herein are system, method, and computer program product embodiments for reducing GPU load by programmatically controlling shading rates in computer graphics. GPU load may be reduced by applying different shading rates to different screen regions. By reading the depth buffer of previous frames and performing image processing, thresholds may be calculated that control the shading rates. The approach may be run on any platform that supports VRS hardware and primitive- or image-based VRS. The approach may be applied on a graphics driver installed on a client device, in a firmware layer between hardware and a driver, in a software layer between a driver and an application, or in hardware on the client device. The approach is flexible and adaptable and calculates and sets the variable rate shading based on the graphics generated by an application without requiring the application developer to manually set variable rate shading.

Abstract: An interconnect structure includes a dielectric layer, a first conductive feature, a hard mask layer, a conductive layer, and a capping layer. The first conductive feature is disposed in the dielectric layer. The hard mask layer is disposed on the first conductive feature. The conductive layer includes a first portion and a second portion, the first portion of the conductive layer is disposed over at least a first portion of the hard mask layer, and the second portion of the conductive layer is disposed over the dielectric layer. The hard mask layer and the conductive layer are formed by different materials. The capping layer is disposed on the dielectric layer and the conductive layer.

Abstract: A semiconductor device includes a substrate, a dielectric layer disposed over the substrate, and an interconnect structure extending through the dielectric layer. The dielectric layer includes a low-k dielectric material which includes silicon carbonitride having a carbon content ranging from about 30 atomic % to about 45 atomic %. The semiconductor device further includes a thermal dissipation feature extending through the dielectric layer and disposed to be spaced apart from the interconnect structure.

Abstract: A method for manufacturing a semiconductor structure includes preparing a dielectric structure formed with trenches respectively defined by lateral surfaces of the dielectric structure, forming spacer layers on the lateral surfaces, filling an electrically conductive material into the trenches to form electrically conductive features, selectively depositing a blocking layer on the dielectric structure, selectively depositing a dielectric material on the electrically conductive features to form a capping layer, removing the blocking layer and the dielectric structure to form recesses, forming sacrificial features in the recesses, forming a sustaining layer to cover the sacrificial features; and removing the sacrificial features to obtain the semiconductor structure formed with air gaps confined by the sustaining layer and the spacer layers.