Abstract: Technologies for low-leakage and low series resistance on-chip capacitors are disclosed. In the illustrative embodiment, each electrode of a capacitor is formed from two metal layers and vias between the metal layers. A high-k dielectric layer is between the metal layers. The electrodes are displaced relative to each other on the plane defined by the high-k dielectric layer. As a result, electric field lines of the capacitor are parallel to the high-k dielectric layer. The electrodes can be displaced from each other by more than the thickness of the high-k dielectric layer, reducing the leakage current through the high-k dielectric layer as compared to a capacitor with field lines perpendicular to the high-k dielectric layer. Such a capacitor may be used to provide power to circuits in a low-power state with little leakage current and/or may be used to absorb radiofrequency (RF) interference.

Abstract: An apparatus, system, and method for improved thermal design power (TDP) range are provided. A device includes a first voltage regulator configured to provide first voltage of a first voltage value, a second voltage regulator configured to provide a second voltage of a second, different voltage value, a first capacitor electrically coupled between a first output of the first voltage regulator and a ground, a second capacitor electrically coupled between a second output of the second voltage regulator and the ground, a first switch electrically coupled between the first output and the second output, a second switch situated in parallel with the first switch, the second switch electrically coupled between the first output and the second output, and a controller configured to provide control signals that control the first voltage regulator, the second voltage regulator, the first switch, and the second switch.

Abstract: Microelectronic assemblies, related devices, and methods are disclosed herein. In some embodiments, a microelectronic assembly may include a package substrate; a bridge, embedded in the package substrate, wherein the bridge includes an integral passive component, and wherein a surface of the bridge include first contacts in a first interconnect area and second contacts in a second interconnect area; a first die coupled to the passive component via the first contacts in the first interconnect area; and a second die coupled to the second contacts in the second interconnect area.

Abstract: A printed circuit board (PCB) comprises a blind via and a discrete component vertically embedded within the blind via.

Abstract: The present disclosure is directed to a semiconductor package including: a package substrate including a top surface, lateral sides and a bottom surface; a ball grid array including a plurality of solder balls coupled to the bottom surface; a stiffener including a bottom portion affixed to the bottom surface of the package substrate and a lateral portion extending from the bottom portion and affixed to the lateral sides of the package substrate, the bottom portion of the stiffener including a plurality of openings for the plurality of solder balls, wherein the top surface of the package substrate is substantially flush with a top surface of the lateral portion; and an electronic component coupled to the top surface of the package substrate.

Abstract: According to various examples, a stacked semiconductor package is described. The stacked semiconductor package may include a package substrate. The stacked semiconductor package may also include a base die disposed on and electrically coupled to the package substrate. The stacked semiconductor package may further include a mold portion disposed on the package substrate at a periphery of the base die, the mold portion may include a through-mold interconnect electrically coupled to the package substrate. The stacked semiconductor package may further include a semiconductor device having a first section disposed on the base die and a second section disposed on the mold portion, wherein the second section of the semiconductor device may be electrically coupled to the package substrate through the through-mold interconnect.

Abstract: A voltage-reference plane has gradient regions that provide altered thicknesses that are useful in a power-deliver network for a semiconductor package substrate. Different signal trace types are located over various portions of the gradient regions to facilitate signal integrity.

Abstract: A multiple-damascene structure is located below a semiconductor device footprint on a printed wiring board, where the structure includes multiple recesses that containing useful devices coupled to a semiconductive device.

Abstract: A chip package including a chip; a substrate; an interposer module including a first layer having a larger surface area than the surface area of a second layer, wherein a bottom of the second layer is attached to a top of the first layer area creating an exposed surface area of the first layer; via openings extending at least partially through the first layer; via openings extending at least partially through the first layer and the second layer; a plurality of conductive routing electrically coupled between the via openings, wherein the chip is electrically coupled to the via openings of a top of the second layer, wherein the substrate is electrically coupled to via openings of a bottom of the first layer; and an electronic component electrically coupled to the via openings of the exposed surface area of the first layer.

Abstract: A capacitor loop substrate assembly includes a substrate with a loop shape, one or more capacitors or other electronic components on the substrate, and an opening in the substrate to allow the capacitor loop substrate assembly to be coupled to an integrated circuit package, such as a package including a die. Interconnects and/or contacts for interconnects are formed in an integrated circuit package to couple the capacitor loop substrate assembly to the integrated circuit package.

Abstract: An Integrated Circuit (IC) package is provided, comprising a first IC die having a first capacitor and a logic circuit, and a second IC die having a second capacitor. The first IC die and the second IC die may be stacked within the IC package one on top of another and electrically coupled with die-to-die interconnects. The logic circuit is electrically coupled in a power delivery network to the first capacitor and the second capacitor. The first IC die and the second IC die include respective back-end-of-line portions in which the first capacitor and the second capacitor, which may comprise metal-insulator-metal capacitors in some embodiments are situated. In some embodiments, the second capacitor is situated in a shadow of the logic circuit. In various embodiments, the first IC die and the second IC die comprise any suitable pair in a plurality of stacked IC dies within an IC package.

Abstract: Various embodiments provide a magnetic sensing scheme for a voltage regulator circuit. The voltage regulator circuit may include a first inductor (also referred to as an output inductor) coupled between a drive circuit and an output node. The voltage regulator circuit may further include a second inductor (also referred to as a sense inductor) having a first terminal coupled to the first inductor at a tap point between terminals of the first inductor. The second inductor may provide a sense voltage at a second terminal of the second inductor. A control circuit may control a state of the voltage regulator circuit based on the sense voltage to provide a regulated output voltage at the output node. Other embodiments may be described and claimed.

Abstract: Embodiments disclosed herein include electronics packages with improved thermal pathways. In an embodiment, an electronics package includes a package substrate. In an embodiment, the package substrate comprises a plurality of backside layers, a plurality of front-side layers, and a core layer between the plurality of backside layers and the plurality of front-side layers. In an embodiment, an inductor is embedded in the plurality of backside layers. In an embodiment, a plurality of bumps are formed over the front-side layers and thermally coupled to the inductor. In an embodiment, the plurality of bumps are thermally coupled to the core layer by a plurality of vias.

Abstract: Embodiments herein relate to a package having a substrate with a core layer with a plurality of conductors coupling a first side of the core layer with a second side of the core layer, and a shield within the core layer that separates a first conductor of the plurality of conductors from a second conductor of the plurality of conductors where the shield is to reduce electromagnetic interference received by the second conductor that is generated by the first conductor. Embodiments may also be related to a package having a substrate with a through hole via through the substrate, where an EMI protective material is applied to a surface of the substrate that forms the via to shield an inner portion of the via.

Abstract: Embodiments disclosed herein include electronic packages with stiffeners. In an embodiment, a stiffener for an electronic package comprises a first layer, that is conductive, and a second layer over the first layer, where the second layer is insulative. In an embodiment, the stiffener further comprises a third layer over the second layer, where the third layer is conductive. In an embodiment, the stiffener further comprises a leg attached to the third layer, where the leg extends towards the first layer and is substantially coplanar with a surface of the first layer opposite from the second layer.

Abstract: An apparatus is provided which comprises: a first voltage regulator; a second voltage regulator; and a switch to selectively couple the first voltage regulator to the second voltage regulator, such that a first output node of the first voltage regulator is temporarily coupled to a second output node of the second voltage regulator via the switch.

Abstract: An apparatus is provided which comprises: a crystal having an input and an output; a first interconnect line having first and second ends, wherein the first end is coupled to the input; a second interconnect line having first and second ends, wherein the first end is coupled to the output; a first capacitor coupled to the input and ground; and a second capacitor coupled to the second end of the second interconnect line. An apparatus is provided which comprises: a high pass filter; a pair of AC coupling capacitors coupled to the high pass filter; a low pass filter coupled to the pair of AC coupling capacitors; and an analog to digital converter (ADC) coupled to the low pass filter.

Abstract: A chip package including a chip; a substrate; an interposer module including a first layer having a larger surface area than the surface area of a second layer, wherein a bottom of the second layer is attached to a top of the first layer area creating an exposed surface area of the first layer; via openings extending at least partially through the first layer; via openings extending at least partially through the first layer and the second layer; a plurality of conductive routing electrically coupled between the via openings, wherein the chip is electrically coupled to the via openings of a top of the second layer, wherein the substrate is electrically coupled to via openings of a bottom of the first layer; and an electronic component electrically coupled to the via openings of the exposed surface area of the first layer.

Abstract: An electronic device comprises an air core inductor including an electronic semiconductor package including a first portion of the air core inductor internal to the electronic semiconductor package; and an electrically conductive layer arranged on a first external surface of the electronic semiconductor package and electrically connected as a second portion of the air core inductor.

Abstract: The present disclosure is directed to a hybrid dielectric interconnect stack for a printed circuit board having a first dielectric layer with a first dielectric constant and a first dielectric loss tangent positioned over an intermediate layer, which includes a first dielectric sublayer with a first sublayer dielectric constant and a first sublayer dielectric loss tangent, an embedded conductive layer, and a second dielectric sublayer with a second sublayer dielectric constant and a second sublayer dielectric loss tangent, in which the embedded conductive layer is positioned between the first and second dielectric sublayers, and a second dielectric layer with a second dielectric constant and a second dielectric loss tangent, in which the intermediate layer is positioned between the first and second dielectric layers.