Abstract: A light-emitting diode (LED) lighting device includes at least a base, at least an LED light source, and at least a driver. The LED light source is of a rectangular parallelepiped form and is directly mounted to and packaged on an outer surface of the base. The driver is electrically connected to the LED light source for driving the LED light source to emit light.

Abstract: A tubeless light-emitting diode (LED) based lighting device includes at least one base, at least one LED lighting module, and at least one control circuit. The base includes a heat dissipation body. The LED lighting module is mounted to the base so that the base provides the LED lighting module with the functions of retention and heat dissipation. The control circuit is mounted to the base and is electrically connected to power wiring of the LED lighting module for ON/OFF switching of the LED lighting module and supplying of operation power. As such, a tubeless lighting device that emits light in a power saving manner and is constructed in a volume reduced manner is provided.

Abstract: A method for checking a phase shift angle of a PSM is described. A calibration curve of a characteristic value of lithography performance with respect to the phase shift angle of a type of PSM is acquired. The patterns of a PSM of the type to be checked are transferred to a photoresist layer to form photoresist patterns, and the characteristic value is measured. The real phase shift angle of the PSM is derived based on the characteristic value according to the calibration curve.

Abstract: A conductive line structure is defined with an OPC photomask and is suitably applied to a semiconductor device. The conductive line structure includes a first conductive line and a second conductive line. The first conductive line includes a first line body oriented in the X-direction of a plane coordinate system, a first end portion at one end of the first line body slanting toward the Y-direction of the plane coordinate system, and a second end portion at the other end of the first line body also slanting toward the Y-direction. The second conductive line arranged in an end-to-end manner with the first conductive line includes a second line body oriented in the X-direction, a third end portion at one end of the second line body slanting toward the Y-direction, and a fourth end portion at the other end of the second line body also slanting toward the Y-direction.

Abstract: The invention is directed to a method for adjusting sizes and shapes of plug openings for border plug openings overlapping with trenches respectively, wherein the border plug openings are separated from each other with a distance equal to or smaller than a specific distance. The method comprises performing an adjusting process for separating the border plug openings away from each other and enlarging the dimensions of the border plug openings so that the border plug openings are located within the trenches respectively and the edges of the borer openings are separated from the sidewalks of the trenches, wherein the border plug openings are enlarged within ranges of the trenches respectively.

Abstract: A lithography method for forming a plurality of patterns in a photoresist layer. A phase shift mask including a plurality of transparent main features, a plurality of first phase shift transparent regions, and a plurality of second phase shift transparent regions is provided. Each transparent main feature is surrounded by the first phase shift transparent regions and the second phase shift transparent regions interlaced contiguously along a periphery of the transparent main feature. Each of the first phase shift transparent regions has a phase shift relative to each of the second phase shift transparent regions. An exposure process is performed to irradiate the phase shift mask with light so that the patterns corresponding to the transparent main features are formed in the photoresist layer.

Abstract: An optical proximity correction method is described. A photomask pattern including multiple line patterns arranged in an end-to-end manner is provided. An initial correction step is conducted to add an end pattern at each of the two ends of each line pattern. Then, a fine correction step is conducted to correct the line patterns and the end patterns. Each end pattern is an asymmetric pattern, and the two end patterns between two adjacent line patterns are in a mirror-symmetric or point-symmetric arrangement.

Abstract: A customer illumination aperture (CIA) structure for lithographic exposure is disclosed, including a central part and at least one off-axis part around the central part. The off-axis part of the CIA is disposed in a symmetric manner with respect to the central part.

Abstract: A phase shift mask includes a light transparent substrate; an opaque material layer coated on the main surface of the light transparent substrate, wherein the opaque material layer has an window opening exposing a light transparent area of the light transparent substrate; a cruciform first phase shifting region of the exposed light transparent area; and a second phase shifting region of the exposed light transparent area except the cruciform first phase shifting region. Light passing through the cruciform first phase shifting region has a phase shift of 180 degrees relative to light passing through the d second phase shifting region.

Abstract: A mask pattern including a group of small-pitched contact hole features with pitch being less than a predetermined value and isolated contact hole features with pitch being greater than the predetermined value is provided. The mask pattern is split into two sub-mask patterns, one having about half of the group of the small-pitched contact hole features and about half of the isolated contact hole features, the other having the rest of the group of the small-pitched contact hole features and the rest of the isolated contact hole features. Two phase shifting masks are formed, each phase shifting mask comprising one of the two sub-mask patterns and dummy features disposed in proximity to each of the contact hole features. Successively, each of the two phase shifting masks is positioned above the substrate. Each phase shifting mask is exposed successively on a photosensitive layer on the substrate.

Abstract: A method for checking a phase shift angle of a PSM is described. A calibration curve of a characteristic value of lithography performance with respect to the phase shift angle of a type of PSM is acquired. The patterns of a PSM of the type to be checked are transferred to a photoresist layer to form photoresist patterns, and the characteristic value is measured. The real phase shift angle of the PSM is derived based on the characteristic value according to the calibration curve.

Abstract: A phase shift mask includes a transparent substrate, a semi-dense pattern, and a dense pattern. The semi-dense pattern is formed on the transparent substrate including a plurality of phase shift regions and non-phase shift regions arranged successively. The dense pattern is formed on the transparent substrate including a plurality of non-phase shift regions, phase shift regions, and non-transparent regions.

Abstract: A chrome-less mask inspection method is provided. The chrome-less mask at least includes a transparent region and a phase shift region. The method includes providing a database having a mask database corresponding to the chrome-less mask. The mask database further includes a frame line pattern having enclosed area and pattern that corresponds to enclosed area and pattern of the phase shift region of the chrome-less mask and a first inspection signal pattern generated by the mask database. An inspecting device is also provided to inspect a second inspection signal pattern from the chrome-less mask. Furthermore, scanning location of the second inspection signal pattern corresponds with scanning location of the first inspection signal pattern. Thereafter, the first inspection signal pattern and the second inspection signal pattern is compared and any differences are registered.

Abstract: A manufacture method of a laminated hollow composite cylinder with an arranged ply angle is disclosed. The fiber in the hollow composite cylinder can be arranged in an angle ? between 30° and 60° according the applications. Prepregs were cut into fan-shaped pieces and laminated in a metal mold to form an annular lamina assembly. The metal mold comprises a concave female mold and a convex male mold that both have a tapered angle complying with the ply angle ?. Hot press molding with pressure over 140.6 kg/cm2 was then used for solidifying the lamina assembly to produce the composite hollow cylinders with the ply angle ?. The laminated hollow composite cylinder can achieve excellent thermal and mechanical properties to meet design requirements.

Abstract: A training method of a digital-analog converter is provided. The digital-analog converter comprises a plurality of parallel capacitors, each of which is floatingly coupled to a plurality of correcting capacitors. Two voltages outputted from the digital-analog converter are received and compared. When a latter output voltage is lower than or equal to a former output voltage, the correcting capacitor is used to correct the capacitor corresponding to the latter output voltage until the latter output voltage is higher than the former output voltage. When the latter output voltage is higher than the former output voltage, a new voltage is outputted from the digital-analog convert and compared with the latter output voltage. The steps of comparing and correcting are repeated until every latter output voltage is higher than every former output voltage.

Abstract: A photomask pattern on a substrate is provided. The photomask pattern comprises a main pattern and a sub-resolution assistant feature. The sub-resolution assistant feature is located on the sides of the main pattern. Furthermore, the sub-resolution assistant feature comprises a first assistant feature and a second assistant feature. The first assistant feature is formed close to the main pattern and the second assistant feature is formed further away from the main pattern but adjacent to the first assistant feature. There is a phase difference of 180° between the first assistant feature and the main pattern. Similarly, there is a phase difference of 180° between the second assistant feature and the first assistant feature. Since the main pattern is bordered by reverse-phase assistant feature, exposure resolution of the photomask is increased.

Abstract: A drive device for a sunshade curtain includes a housing with a cover attached thereto, a motor received in the housing with a driving shaft extending through the cover, a driver attached to the free end of the driving shaft, and a pair of switches movably attached to the cover at opposite sides of the driver. The switches have a pair of idlers respectively in contact with the driver at opposite sides of the driver. When a rope for opening or closing the sunshade curtain is received between the driver and the idlers, and when the drive device is turned on to drive the driver, the rotating driver draws the rope to move along the rotation direction thereof through friction. Thus, the sunshade curtain is opened or closed automatically by the drive device through controlling the rotation of the motor.

Abstract: A training method of a digital-analog converter is provided. The digital-analog converter comprises a plurality of parallel capacitors, each of which is floatingly coupled to a plurality of correcting capacitors. Two voltages outputted from the digital-analog converter are received and compared. When a latter output voltage is lower than or equal to a former output voltage, the correcting capacitor is used to correct the capacitor corresponding to the latter output voltage until the latter output voltage is higher than the former output voltage. When the latter output voltage is higher than the former output voltage, a new voltage is outputted from the digital-analog convert and compared with the latter output voltage. The steps of comparing and correcting are repeated until every latter output voltage is higher than every former output voltage.

Abstract: The present invention provides a photomask comprising a substrate and a plurality of shielding patterns. The substrate comprising a plurality of shielding regions and a plurality of transparent regions, while each transparent region is disposed between two adjacent shielding regions and has one depression. The depression and the shielding region share a same edge and a sidewall of the depression is aligned with a sidewall of the shielding pattern.

Abstract: A lithography method for forming a plurality of patterns in a photoresist layer. A phase shift mask including a plurality of transparent main features, a plurality of first phase shift transparent regions, and a plurality of second phase shift transparent regions is provided. Each transparent main feature is surrounded by the first phase shift transparent regions and the second phase shift transparent regions interlaced contiguously along a periphery of the transparent main feature. Each of the first phase shift transparent regions has a phase shift relative to each of the second phase shift transparent regions. An exposure process is performed to irradiate the phase shift mask with light so that the patterns corresponding to the transparent main features are formed in the photoresist layer.