Abstract: A half-tone phase shift mask is formed from the composite structure of a mask substrate and a half-tone phase shifting layer. The half-tone phase shifting layer induces a 180° phase shift to light passing through the mask. The half tone phase shifting layer further includes a main pattern having a first width and a first length, and an assist feature having a second width and a second length. The assist feature is parallel to the main pattern and disposed at both sides of the main pattern while being separated therefrom by a distance. Using deep ultraviolet light as the exposure source, a wafer scale of the first width is about 0.1-0.15 &mgr;m, a wafer scale of the second width is about 0.055-0.09 &mgr;m and the distance between the main pattern and the assist feature is about 0.22-0.27 &mgr;m.

Abstract: A reticle having an assist feature between semi-dense lines is described. The reticle has two adjacent, substantially parallel, and substantially equally spaced line segments of which each representing a portion of a main feature having a line width, between two adjacent line segments of the group having a gap space, wherein the gap-space/line-width ratio is equal to about 3-6.5. Between the two adjacent line segments, at least one inside assist feature is located. At the outside edges of the extreme left-hand and right-hand line segments, two outside assist features are located, respectively, wherein each of the two assist features has a first width and is spaced apart from the nearest line segment by a distance.

Abstract: A method of optical proximity correction. A main pattern is provided. The main pattern has a critical dimension. When the critical dimension is reduced to reach a first reference value or below, a serif/hammerhead is added onto the main pattern. When the critical dimension is further reduced to a second reference value or below, an assist feature is added onto the main pattern. The corrected pattern is then transferred to a layer on wafer with an improved fidelity.

Abstract: A method of automatically forming a rim PSM is provided. A first pattern comprising a conventional original pattern as a blinding layer and assist features around the conventional circuit pattern is designed. A portion of a Cr film and a portion of a phase shifting layer under the Cr film are removed with the first pattern. The removed portion of the Cr film and the removed portion of the phase shifting layer are positioned on the assist feature. A second pattern comprising the conventional circuit pattern and a half of the assist features is designed. A portion of the Cr film in positions other than on the second pattern is removed. The convention circuit pattern formed at the mask medium is defined as the blinding layer. The area of the assist features only comprise a quartz substrate that light can pass through. The other areas of the mask medium wherein the phase shifting layer remains is defined as the phase-shifting portion of the PSM.

Abstract: A method of optical proximity correction. A main pattern is provided. The main pattern has a critical dimension. When the critical dimension is reduced to reach a first reference value or below, a serif/hammerhead is added onto the main pattern. When the critical dimension is further reduced to a second reference value or below, an assist feature is added onto the main pattern. The corrected pattern is then transferred to a layer on wafer with an improved fidelity.

Abstract: A method for forming a pattern with both a logic-type and, a memory-type circuit is disclosed. The method includes first providing a wafer which includes a photoresist layer, then covering the photoresist layer with a first mask including an opaque area and a first pattern area. Forming a first pattern on the photoresist layer by a first exposure. Covering the photoresist layer with a second mask after the first mask is removed. Moreover, a second pattern is printed on the photoresist layer by a second exposure. Finally, the second mask is removed. The double-exposure method will enhance the resolution of the pattern defined on the photoresist layer.

Abstract: A method of manufacturing a strong PSM. A phase shifting layer is formed on a mask substrate, and a first opening and a second opening are formed within the phase shifting layer by patterning to expose a portion of the mask substrate. Thereafter, the mask substrate is etched along the first opening to a first depth wherein the first depth has a phase shift of 90° with the second opening. The mask substrate is etched again along the first opening to a second depth wherein the second depth has a phase shift of 180° with the second opening. An etching step is then carried out along the first opening and the second opening to obtain simultaneously a third depth and a fourth depth of the first opening and the second opening, respectively, with a phase shift of 180°.

Abstract: For a dense-line mask pattern, if the ratio of space width to line width is larger than 2.0 and the size of the line width is less than the exposure wave length, or for an iso-line mask pattern, if the size of the line width is less than the exposure wave length, assist features should be added and OAI should be used to increase the process window. For a dense-line mask pattern, if the ratio of space width to line width is smaller than 2.0, or for an iso-line mask pattern, if the size of the line width is larger than the exposure wavelength, no assist feature should be added.

Abstract: A method of optical proximity correction. A main pattern is provided. The main pattern has a critical dimension. When the critical dimension is reduced to reach a first reference value or below, a serif/hammerhead is added onto the main pattern. When the critical dimension is further reduced to a second reference value or below, an assist feature is added onto the main pattern. The corrected pattern is then transferred to a layer on wafer with an improved fidelity.

Abstract: A method of optical proximity correction suitable for use in a mixed mode photomask. An original pattern is to be -transferred from the mixed mode photomask. A binary mask curve and a phase shift mask curve reflecting relationship between critical dimensions of the photomask and the original pattern are obtained. A critical value of the critical dimension is selected. For the binary mask curve, the portion with the critical dimension of the original pattern larger than the critical value is selected. In contrast, for the phase shift mask curve, the portion with the critical dimension of the original pattern smaller than the critical value is selected. These two portions are combined as an optical characteristic curve. The mixed mode photomask can thus be fabricated according to the optical characteristic curve.

Abstract: A method of optical proximity correction suitable for use in a mixed mode photomask. An original pattern is to be transferred from the mixed mode photomask. A binary mask curve and a phase shift mask curve reflecting relationship between critical dimensions of the photomask and the original pattern are obtained. A critical value of the critical dimension is selected. For the binary mask curve, the portion with the critical dimension of the original pattern larger than the critical value is selected. In contrast, for the phase shift mask curve, the portion with the critical dimension of the original pattern smaller than the critical value is selected. These two portions are combined as an optical characteristic curve. The mixed mode photomask can thus be fabricated according to the optical characteristic curve.

Abstract: An inspection method for a correction pattern includes the following steps. An optical proximity correction is performed to an original pattern to obtain an optical proximity correction pattern. An "exclusive or" logic operation is done to the original pattern and the optical correction pattern to obtain an inspection pattern. The inspection pattern includes a number of kinds of line width sizing. The line width sizing of the inspection pattern is then compared with an optical correction reference size.

Abstract: A method for automatically forming a sub-resolution PSM is provided. The shielding layer is designed by adding an assist feature to a peripheral region of an original shielding layer formed on a quartz substrate. Using an etching process with a etching mask, a portion of the original shielding layer is removed to form an original pattern and an assist feature. The assist feature is separated from the original pattern by a distance. A photoresist layer is tormed on the rim of the shielding layer so that the original pattern, half of the assist feature, and an exposed portion of the quartz substrate between the original pattern and the assist feature are exposed. A selective etching process is performed to etch the exposed portion of the quartz substrate to a certain depth so that it behaves like a phase shifting layer. After removing the photoresist layer, the sub-resolution PSM including the integrated circuit pattern and the assist feature is complete.

Abstract: A process for globally planarizing the insulator used to fill narrow and wide shallow trenches, used in a MOSFET device, structure, has been developed. The process features smoothing the topography that exists after the insulator filling of narrow and shallow trenches, via use of a two layer planarization composite, consisting of an underlying, anti-reflective coating, which enhances the flow of an overlying photoresist layer. A two phase, RIE procedure is then employed, with the initial phase exposing thick insulator in narrow shallow trench regions, but leaving the two layer planarization composite protecting the thinner insulator in the wide shallow trenches. The second phase of the RIE procedure removes thick insulator, overlying the narrow shallow trenches, resulting in a planarized topography.

Abstract: An attenuated Phase Shift Mask (PSM) blank and an attenuated Phase Shift Mask (PSM), and a method by which the attenuated Phase Shift Mask (PSM) blank and the attenuated Phase Shift Mask (PSM) may be formed. To form the attenuated Phase Shift Mask (PSM) blank there is first provided a transparent substrate. Formed upon the transparent substrate is a tantalum-silicon oxide blanket semi-transparent shifter layer which has the formula,Ta.sub.x Si.sub.y O.sub.1-x-ywherein 0.1<x<0.3 and 0.03<y<0.1. To form the attenuated Phase Shift Mask (PSM) from the attenuated Phase Shift Mask (PSM) blank, the tantalum-silicon oxide blanket semi-transparent shifter layer is patterned to form a tantalum-silicon oxide patterned semi-transparent shifter layer.

Abstract: A breast augmentation device made from flexible rubber, having a breast-shaped front part and a hollow, rounded rear part for covering over the breast, wherein the rear part has a plurality of elongated grooves with vent holes and a plurality of elongated ribs, each elongated groove having at least one end perpendicularly connected to the periphery of the orifice of the hollow, rounded rear part, each elongated rib having a center portion and two opposite ends extended from the center portion and perpendicularly connected to the periphery of the orifice, the height of each elongated rib reducing gradually from the respective center portion toward the respective opposite ends.

Abstract: The present invention is memory access system suitable for use in a computer system having M memory banks and N masters. The memory access system comprises a separate paged interleaved controller associated with each of the M memory banks. Each of the paged interleaved controllers comprises a bank arbiter and a bank controller. The bank arbiter associated with each memory bank receives requests from the N masters and subjects them to a request-halt protocol. The request-halt protocol executed by each arbiter prioritizes among a plurality of current requests by said masters for the same memory bank. Each arbiter insures that a current request generated by a master will not be granted if the master has a previous request that has not been granted by another arbiter. This insures that the requests of each master are granted in the order in which the requests are made.

Abstract: An exercise tricycle comprises a rear wheel, a one-way forward wheel, a front steering wheel and a brake mechanism which together provide the user with excellent exercise results. One of the user's feet is placed on the front wheel pedal, while the other foot is placed on the pedal between the two rear wheels. The user's two hands may pull two ropes to actuate the one-way forward wheel to drive the spindle and the rear wheels to cause the tricycle to move forwards. Steering and brake functions are performed by operating the front pedal assembly.