Abstract: A first plasmonic-nanostructure sensor pixel includes a semiconductor substrate and a plurality of metal pillars. The semiconductor substrate has a top surface and a photodiode region therebeneath. The plurality of metal pillars is at least partially embedded in the substrate and extends from the top surface in a direction substantially perpendicular to the top surface. A second plasmonic-nanostructure sensor pixel includes (a) a semiconductor substrate having a top surface, (b) an oxide layer on the top surface, (c) a thin-film coating between the top surface and the oxide layer, and (d) a plurality of metal nanoparticles (i) at least partially between the top surface and the oxide layer and (ii) at least partially embedded in at least one of the thin-film coating and the oxide layer. A third plasmonic-nanostructure sensor pixel includes features of both the first and second plasmonic-nanostructure sensor pixels.

Abstract: An image sensor pixel array comprises a plurality of image pixel units to gather image information and a plurality of phase detection auto-focus (PDAF) pixel units to gather phase information. Each of the PDAF pixel units includes two of first image sensor pixels covered by a shared micro-lens. Each of the image pixel units includes four of second image sensor pixels adjacent to each other, wherein each of the second image sensor pixels is covered by an individual micro-lens. A coating layer is disposed on the micro-lenses and forms a flattened surface across the whole image sensor pixel array to receive incident light.

Abstract: An image sensor includes a multi-pixel detector. The multi-pixel detector includes a first pixel formed in a substrate and having a first photodiode region, a second pixel formed in the substrate adjacent to the first pixel and having a second photodiode region, and a microlens above both the first pixel and the second pixel. The microlens includes (a) in a first cross-sectional plane perpendicular to a top surface of the substrate and including both the first and the second photodiode regions, a first height profile having N1 local maxima, and (b) in a second cross-sectional plane perpendicular to the first cross-sectional plane and the top surface and including only one of the first and the second photodiode regions, a second height profile having N2>N1 local maxima.

Abstract: An image sensor includes a multi-pixel detector. The multi-pixel detector includes a first pixel formed in a substrate and having a first photodiode region, a second pixel formed in the substrate adjacent to the first pixel and having a second photodiode region, and a microlens above both the first pixel and the second pixel. The microlens includes (a) in a first cross-sectional plane perpendicular to a top surface of the substrate and including both the first and the second photodiode regions, a first height profile having N1 local maxima, and (b) in a second cross-sectional plane perpendicular to the first cross-sectional plane and the top surface and including only one of the first and the second photodiode regions, a second height profile having N2>N1 local maxima.

Abstract: A backside-illuminated color image sensor with crosstalk-suppressing color filter array includes (a) a silicon layer including an array of photodiodes and (b) a color filter layer on the light-receiving surface of the silicon layer, wherein the color filter layer includes (i) an array of color filters cooperating with the array of photodiodes to form a respective array of color pixels and (ii) a light barrier grid disposed between the color filters to suppress transmission of light between adjacent ones of the color filters. The light barrier is spatially non-uniform across the color filter layer to account for variation of chief ray angle across the array of color filters.

Abstract: A backside-illuminated color image sensor with crosstalk-suppressing color filter array includes (a) a silicon layer including an array of photodiodes and (b) a color filter layer on the light-receiving surface of the silicon layer, wherein the color filter layer includes (i) an array of color filters cooperating with the array of photodiodes to form a respective array of color pixels and (ii) a light barrier grid disposed between the color filters to suppress transmission of light between adjacent ones of the color filters.

Abstract: A phase-detection auto-focus (PDAF) pixel array includes a first pixel and a second pixel. The first pixel, located at a first distance from a center of the PDAF pixel array, includes a first inner photodiode and a first outer photodiode with respect to the center. The first inner photodiode and the first outer photodiode occupy respectively a first inner area and a first outer area. The first inner area divided by the first outer area equals a first ratio. The second pixel, located at a second distance from the center that exceeds the first distance, includes a second inner photodiode and a second outer photodiode with respect to the center. The second inner photodiode and the second outer photodiode occupy respectively a second inner area and a second outer area. The second inner area divided by the second outer area equals a second ratio, which exceeds the first ratio.

Abstract: An imaging system with on-chip phase-detection includes an image sensor with symmetric multi-pixel phase-difference detectors. Each symmetric multi-pixel phase-difference detector includes (a) a plurality of pixels forming an array and each having a respective color filter thereon, each color filter having a transmission spectrum and (b) a microlens at least partially above each of the plurality of pixels and having an optical axis intersecting the array. The array, by virtue of each transmission spectrum, has reflection symmetry with respect to both (a) a first plane that includes the optical axis and (b) a second plane that is orthogonal to the first plane. The imaging system includes a phase-detection row pair, which includes a plurality of symmetric multi-pixel phase-difference detectors in a pair of adjacent pixel rows and a pair, and an analogous phase-detection column pair.

Abstract: A phase-detection auto-focus (PDAF) pixel array includes a first pixel and a second pixel. The first pixel, located at a first distance from a center of the PDAF pixel array, includes a first inner photodiode and a first outer photodiode with respect to the center. The first inner photodiode and the first outer photodiode occupy respectively a first inner area and a first outer area. The first inner area divided by the first outer area equals a first ratio. The second pixel, located at a second distance from the center that exceeds the first distance, includes a second inner photodiode and a second outer photodiode with respect to the center. The second inner photodiode and the second outer photodiode occupy respectively a second inner area and a second outer area. The second inner area divided by the second outer area equals a second ratio, which exceeds the first ratio.

Abstract: A first plasmonic-nanostructure sensor pixel includes a semiconductor substrate and a plurality of metal pillars. The semiconductor substrate has a top surface and a photodiode region therebeneath. The plurality of metal pillars is at least partially embedded in the substrate and extends from the top surface in a direction substantially perpendicular to the top surface. A second plasmonic-nanostructure sensor pixel includes (a) a semiconductor substrate having a top surface, (b) an oxide layer on the top surface, (c) a thin-film coating between the top surface and the oxide layer, and (d) a plurality of metal nanoparticles (i) at least partially between the top surface and the oxide layer and (ii) at least partially embedded in at least one of the thin-film coating and the oxide layer. A third plasmonic-nanostructure sensor pixel includes features of both the first and second plasmonic-nanostructure sensor pixels.

Abstract: An imaging system with on-chip phase-detection includes an image sensor with symmetric multi-pixel phase-difference detectors. Each symmetric multi-pixel phase-difference detector includes (a) a plurality of pixels forming an array and each having a respective color filter thereon, each color filter having a transmission spectrum and (b) a microlens at least partially above each of the plurality of pixels and having an optical axis intersecting the array. The array, by virtue of each transmission spectrum, has reflection symmetry with respect to both (a) a first plane that includes the optical axis and (b) a second plane that is orthogonal to the first plane. The imaging system includes a phase-detection row pair, which includes a plurality of symmetric multi-pixel phase-difference detectors in a pair of adjacent pixel rows and a pair, and an analogous phase-detection column pair.

Abstract: Implementations of a color filter array comprising a plurality of tiled minimal repeating units. Each minimal repeating unit includes at least a first set of filters comprising three or more color filters, the first set including at least one color filter with a first spectral photoresponse, at least one color filter with a second spectral photoresponse, and at least one color filter with a third spectral photoresponse; and a second set of filters comprising one or more broadband filters positioned among the color filters of the first set, wherein each of the one or more broadband filters has a fourth spectral photoresponse with a broader spectrum than any of the first, second, and third spectral photoresponses, and wherein the individual filters of the second set have a smaller area than any of the individual filters in the first set. Other implementations are disclosed and claimed.

Abstract: An image sensor for on-chip phase detection includes a pixel array for capturing an image of a scene, wherein the pixel array has a plurality of horizontal phase-detection rows, each including phase-detection pixels for detecting horizontal change in the scene, and a plurality of vertical phase-detection columns, each including phase-detection pixels for detecting vertical change in the scene, and wherein each of the horizontal phase-detection rows intersects each of the vertical phase-detection columns. A phase-detection method includes generating a pair of horizontal line profiles using one of a plurality of phase-detection rows; generating a pair of vertical line profiles using one of a plurality of phase-detection columns intersecting with the one of a plurality of phase-detection rows; and determining phase shift associated with at least one arbitrarily oriented edge in a scene, based upon the pair of horizontal line profiles and the pair of vertical line profiles.

Abstract: An image sensor for on-chip phase detection includes a pixel array for capturing an image of a scene, wherein the pixel array has a plurality of horizontal phase-detection rows, each including phase-detection pixels for detecting horizontal change in the scene, and a plurality of vertical phase-detection columns, each including phase-detection pixels for detecting vertical change in the scene, and wherein each of the horizontal phase-detection rows intersects each of the vertical phase-detection columns. A phase-detection method includes generating a pair of horizontal line profiles using one of a plurality of phase-detection rows; generating a pair of vertical line profiles using one of a plurality of phase-detection columns intersecting with the one of a plurality of phase-detection rows; and determining phase shift associated with at least one arbitrarily oriented edge in a scene, based upon the pair of horizontal line profiles and the pair of vertical line profiles.

Abstract: An improved back side illuminated (BSI) complementary metal oxide semiconductor (CMOS) image sensor, and associated methods, improve phase detecting capability. The BSI CMOS image sensor has an array of pixels that include a phase detecting pixel (PDP), a composite grid formed of a buried color filter array and composite metal/oxide grid, and a photodiode implant corresponding to the PDP. A PDP mask is fabricated with a deep trench isolation (DTI) structure proximate the PDP and positioned to mask at least part of the photodiode implant such that the PDP mask is positioned between the composite grid and the photodiode implant.

Abstract: Implementations of a color filter array comprising a plurality of tiled minimal repeating units. Each minimal repeating unit includes at least a first set of filters comprising three or more color filters, the first set including at least one color filter with a first spectral photoresponse, at least one color filter with a second spectral photoresponse, and at least one color filter with a third spectral photoresponse; and a second set of filters comprising one or more broadband filters positioned among the color filters of the first set, wherein each of the one or more broadband filters has a fourth spectral photoresponse with a broader spectrum than any of the first, second, and third spectral photoresponses, and wherein the individual filters of the second set have a smaller area than any of the individual filters in the first set. Other implementations are disclosed and claimed.

Abstract: Implementations of a color filter array comprising a plurality of tiled minimal repeating units. Each minimal repeating unit includes at least a first set of filters comprising three or more color filters, the first set including at least one color filter with a first spectral photoresponse, at least one color filter with a second spectral photoresponse, and at least one color filter with a third spectral photoresponse; and a second set of filters comprising one or more broadband filters positioned among the color filters of the first set, wherein each of the one or more broadband filters has a fourth spectral photoresponse with a broader spectrum than any of the first, second, and third spectral photoresponses, and wherein the individual filters of the second set have a smaller area than any of the individual filters in the first set. Other implementations are disclosed and claimed.

Abstract: Implementations of a color filter array comprising a plurality of tiled minimal repeating units. Each minimal repeating unit includes at least a first set of filters comprising three or more color filters, the first set including at least one color filter with a first spectral photoresponse, at least one color filter with a second spectral photoresponse, and at least one color filter with a third spectral photoresponse; and a second set of filters comprising one or more broadband filters positioned among the color filters of the first set, wherein each of the one or more broadband filters has a fourth spectral photoresponse with a broader spectrum than any of the first, second, and third spectral photoresponses, and wherein the individual filters of the second set have a smaller area than any of the individual filters in the first set. Other implementations are disclosed and claimed.

Abstract: A photosensor has a masking layer having an opening over a central photodiode and a first adjacent photodiode, the first adjacent photodiode covered by the masking layer and located sufficiently near the central photodiode that at least some light admitted through the opening over the central photodiode reaches the first adjacent photodiode through the central photodiode. The photosensor also has a second adjacent photodiode; the second adjacent photodiode covered by the masking layer and located sufficiently near the first adjacent photodiode that at least some light admitted through the opening over the central photodiode is capable of reaching the second adjacent photodiode through the first adjacent photodiode. Circuitry is provided for reading the photodiodes and generating a blue, a green, and a red channel signal by processing signals read from the photodiodes.

Abstract: Embodiments of an apparatus including a pixel array and a color filter array optically coupled to the pixel array, the color filter array including a plurality of tiled minimal repeating units. Processing circuitry is coupled to the pixel array to correct fixed pattern noise (FPN) in an image captured by the pixel array. The processing circuitry corrects the values of pixels that are part of a correction group, and wherein the corrections comprise a combination of a color ratio correction that is based on the ratios of selected colors within the minimal repeating unit, and one or more crosstalk corrections that are based on a chief ray angle (CRA) correction and the color ratio correction.