Abstract: A photosensor has a masking layer having an opening over a central photodiode and a first adjacent photodiode, the first adjacent photodiode covered by the masking layer and located sufficiently near the central photodiode that at least some light admitted through the opening over the central photodiode reaches the first adjacent photodiode through the central photodiode. The photosensor also has a second adjacent photodiode; the second adjacent photodiode covered by the masking layer and located sufficiently near the first adjacent photodiode that at least some light admitted through the opening over the central photodiode is capable of reaching the second adjacent photodiode through the first adjacent photodiode. Circuitry is provided for reading the photodiodes and generating a blue, a green, and a red channel signal by processing signals read from the photodiodes.

Abstract: Embodiments of an apparatus including a pixel array and a color filter array optically coupled to the pixel array, the color filter array including a plurality of tiled minimal repeating units. Processing circuitry is coupled to the pixel array to correct fixed pattern noise (FPN) in an image captured by the pixel array. The processing circuitry corrects the values of pixels that are part of a correction group, and wherein the corrections comprise a combination of a color ratio correction that is based on the ratios of selected colors within the minimal repeating unit, and one or more crosstalk corrections that are based on a chief ray angle (CRA) correction and the color ratio correction.

Abstract: A photosensor device includes a plurality of first well structures, a light shielding layer, and a plurality of second well structures. The first well structures are disposed in a substrate. The light shielding layer disposed is on the substrate; it covers a portion of the first well structures and exposes the rest portion of the first well structures. The covered first well structures are adjacent to the exposed first well structures exposed. The exposed first well structures generate a first photocurrent according to incident light. The second well structures generate a second photocurrent according to incident light. A total surface area of the second well structures is substantially equal to a total surface area of the exposed first well structures. A method for determining the incident light is also provided.

Abstract: A photosensor device includes a plurality of first well structures, a light shielding layer, and a plurality of second well structures. The first well structures are disposed in a substrate. The light shielding layer disposed is on the substrate; it covers a portion of the first well structures and exposes the rest portion of the first well structures. The covered first well structures are adjacent to the exposed first well structures exposed. The exposed first well structures generate a first photocurrent according to incident light. The second well structures generate a second photocurrent according to incident light. A total surface area of the second well structures is substantially equal to a total surface area of the exposed first well structures. A method for determining the incident light is also provided.

Abstract: The present invention discloses a color filter by copper and silver film, comprising: a lower copper layer; a lower silver layer formed on the lower copper layer; a medium formed on the lower silver layer; an upper copper layer formed on the medium; and an upper silver layer formed on the upper copper layer.

Abstract: The present invention discloses a color filter by copper and silver film, comprising: a lower copper layer; a lower silver layer formed on the lower copper layer; a medium formed on the lower silver layer; an upper copper layer formed on the medium; and an upper silver layer formed on the upper copper layer.

Abstract: An anti-reflection structure for transmitting a light source is disclosed. The anti-reflection structure comprises a first dielectric layer of a first refractive index and a second dielectric layer of a second refractive index different from the first refractive index. The first dielectric layer has a plurality of protrusions randomly arranged on a top surface thereof, in which the plurality of protrusions and the intervals therebetween has an average size smaller than the wavelength of the light source. The second dielectric layer has a bottom surface conformally attached to the top surface of the first dielectric layer. The invention also discloses an image sensor device having the anti-reflection structure.

Abstract: Color filter arrays (CFA) and image sensors using same are provided. A color filter array includes a plurality of first color filter patterns respectively interlaced with a plurality of second color filter patterns, wherein the first and second color filter patterns comprise a plurality of color filters of at least three different colors of red (R), green (G) and blue (B) filters, and the first and second color filter patterns are not mirror symmetrical, and a blue (B) filter in one of the first color filter patterns is adjoined by a red (R) filter in one of the second color filter patterns adjacent thereto and/or a red (R) filter in one of the first color filter patterns is adjoined by a blue filter in one of the color filter patterns adjacent thereto.

Abstract: The present invention discloses a color filter by copper and silver film, comprising: a lower copper layer; a lower silver layer formed on the lower copper layer; a medium formed on the lower silver layer; an upper copper layer formed on the medium; and an upper silver layer formed on the upper copper layer.

Abstract: A microlens array is provided, including a base layer with a plurality of first microlenses formed over a first region thereof, wherein the first microlenses are formed with a first height. A plurality of second microlenses are formed over a second region of the base layer, wherein the second region surrounds the first region and the second microlenses are formed with a second height lower than the first height. A plurality of third microlenses are formed over a third region of the base layer, wherein the third region surrounds the second and three regions, and the microlenses are formed with a third height lower than the first and second heights.

Abstract: The present invention discloses a CMOS image sensor comprising: a substrate; a photo diode formed in the substrate; an interconnection formed on the substrate, wherein the portions of the interconnection are insulated from one another by a dielectric material; a light passage penetrating through at least part of the dielectric material; a micro lens above the light passage; and a color filter above the micro lens.

Abstract: The present invention discloses a color filter by copper and silver film, comprising: a lower copper layer; a lower silver layer formed on the lower copper layer; a medium formed on the lower silver layer; an upper copper layer formed on the medium; and an upper silver layer formed on the upper copper layer.

Abstract: Color filter arrays (CFA) and image sensors using same are provided. A color filter array includes a plurality of first color filter patterns respectively interlaced with a plurality of second color filter patterns, wherein the first and second color filter patterns comprise a plurality of color filters of at least three different colors of red (R), green (G) and blue (B) filters, and the first and second color filter patterns are not mirror symmetrical, and a blue (B) filter in one of the first color filter patterns is adjoined by a red (R) filter in one of the second color filter patterns adjacent thereto and/or a red (R) filter in one of the first color filter patterns is adjoined by a blue filter in one of the color filter patterns adjacent thereto.

Abstract: A method for designing a microlens array on a pixel array is disclosed. A radial distance of each pixel from a central pixel in a pixel array is calculated, in which the central pixel acts as an origin of an X-Y coordinate. A chief ray angle of each pixel is determined according to the corresponding radial distance. A microlens shift with respect to the corresponding pixel is determined according to the corresponding chief ray angle. Each microlens shift combines an X-axis direction shift with a Y-axis direction shift, and the X-axis direction shift ratio is different from the Y-axis direction shift ratio. A plurality of microlenses is arranged according to the corresponding microlens shifts to form a microlens array on the pixel array.

Abstract: A method for fabricating an image sensor device is disclosed. A substrate having a sensing area comprising a pixel array therein is provided. A photoresist layer is coated over the substrate. Exposure is performed on at least two regions of the photoresist layer by at least two binary half-tone masks, respectively, in which a first and second binary half-tone masks of the two binary half-tone masks have different optical transparency distributions. Development is performed on the exposed photoresist layer to form a convex microlens array corresponding to the pixel array of the sensing area and comprising at least two microlenses with different convex profiles.

Abstract: A microlens array is provided, including a base layer with a plurality of first microlenses formed over a first region thereof, wherein the first microlenses are formed with a first height. A plurality of second microlenses are formed over a second region of the base layer, wherein the second region surrounds the first region and the second microlenses are formed with a second height lower than the first height. A plurality of third microlenses are formed over a third region of the base layer, wherein the third region surrounds the second and three regions, and the microlenses are formed with a third height lower than the first and second heights.

Abstract: An anti-reflection structure for transmitting a light source is disclosed. The anti-reflection structure comprises a first dielectric layer of a first refractive index and a second dielectric layer of a second refractive index different from the first refractive index. The first dielectric layer has a plurality of protrusions randomly arranged on a top surface thereof, in which the plurality of protrusions and the intervals therebetween has an average size smaller than the wavelength of the light source. The second dielectric layer has a bottom surface conformally attached to the top surface of the first dielectric layer. The invention also discloses an image sensor device having the anti-reflection structure.

Abstract: An image sensor device is disclosed. The image sensor device comprises a substrate having a pixel array therein. A first transparent layer with a curved surface is disposed on the substrate. A micro lens array is conformally disposed on the curved surface of the first transparent layer and corresponds to the pixel array in the substrate. The invention also discloses an electronic assembly for an image sensor device and a fabrication method thereof.

Abstract: An image sensor device is disclosed. The device comprises a plurality of unit pixels, and each unit pixel comprises a substrate and a non-absorptive color separating device overlying the substrate. The substrate comprises a plurality of photodiodes horizontally arranged in a row, and at least one bevel boundary area between the photodiodes. The non-absorptive color separating device disperses incident white light into components thereof arranged in the row according to a gradient of wave lengths of the components of white light, and introduces the components of white light to the photodiodes.

Abstract: Color filter arrays (CFA) and image sensors using same are provided. A color filter array includes a two-dimensional array including a plurality of first color filters, a plurality of second color filters, and a plurality of third color filters, wherein the first, second and third color filters are periodically arranged, and at least the first, second and third color filters formed in a first region of the two-dimensional array and the first, second and third color filters formed in a second region of the two-dimensional array are symmetrically mirrored.