Abstract: A method of forming a tunnel oxide layer is disclosed. The method of the present invention uses the rapid thermal process (RTP) rather than the conventional furnace process. The silicon dioxide (SiO2) film served as the tunnel oxide layer is formed on single wafer by utilizing the rapid thermal oxidation (RTO) method, and the tunnel oxide layer is annealed in-situ by utilizing the rapid thermal annealing (RTA) method to improve the quality of the tunnel oxide layer. Therefore, the time of forming the tunnel oxide layer can be decreased, and the thermal budget of the process can be reduced. Further, the uniformity of the tunnel oxide layer can be enhanced, and not only the contamination but also the consumed manpower and time resulted from changing chamber can be avoided.

Abstract: The method for improving the performance of flash memory. A substrate is proved. A tunnel oxide layer is formed on the substrate. There two gate, structure are formed on the tunnel oxide layer. The gate structure including a first polysilicon layer as a floating gate, an interpoly dielectric layer such as ONO layer on the floating gate, a second polysilicon layer as a control gate on the interpoly dielectric layer. Moreover, the poly stringer is exit between the gates, wherein the poly stringer is unmovied after etched. Next, the oxygen free radical process cell oxidation is processed. The results ONO encroachment is very slightly then improvement of 6% GCR with pre-mixing gas process cell oxidation can increase operation speed by more than 5 times and eliminated poly stringer.

Abstract: A method for forming a tunnel oxide film of a flash memory. A chamber having a wafer therein is provided. Hydrogen and oxygen are introduced into the chamber, whereby the chamber has a pressure and a temperature therein. The pressure of the chamber is decreased to about 5-15 torrs. The temperature of the chamber is increased to about 850° C. to about 1100° C., whereby the hydrogen reacts with the oxygen to form a plurality of oxygen radicals, and whereby the oxygen radicals react with the wafer to form a silicon oxide film.

Abstract: A method of forming a tunnel oxide layer is disclosed. The method of the present invention uses the rapid thermal process (RTP) rather than the conventional furnace process. The silicon dioxide (SiO2) film served as the tunnel oxide layer is formed on single wafer by utilizing the rapid thermal oxidation (RTO) method, and the tunnel oxide layer is annealed in-situ by utilizing the rapid thermal annealing (RTA) method to improve the quality of the tunnel oxide layer. Therefore, the time of forming the tunnel oxide layer can be decreased, and the thermal budget of the process can be reduced. Further, the uniformity of the tunnel oxide layer can be enhanced, and not only the contamination but also the consumed manpower and time resulted from changing chamber can be avoided.