Abstract: An atomic layer deposition apparatus including a chamber, a platform, a shower head, a bias power supply, a first injection device, and a second injection device is provided. The platform and the shower head are disposed in the chamber, and the platform is configured to carry a substrate having a high aspect ratio structure. The bias power supply is coupled to the platform. The first injection device and the second injection device are connected to the chamber; the first injection device injects a first precursor or a first inert gas into the chamber along a first direction through the shower head, and the second injection device injects a second precursor or a second inert gas into the chamber along a second direction perpendicular to the first direction. When the first precursor or the second precursor is injected into the chamber, the bias power supply is turned on. When the first inert gas or the second inert gas is injected into the chamber, the bias power supply is turned off.

Abstract: A deposition method including following steps is provided. A first precursor is injected into a chamber along a first direction, and a bias power supply is turned on to attract the first precursor to a substrate. A second precursor is injected into the chamber along a second direction perpendicular to the first direction, and the bias power supply is turned on to attract the second precursor to the substrate. A first inert gas is injected into the chamber along the first direction, and the bias power supply is turned off to purge an unnecessary part of the first precursor or an unnecessary part of the second precursor or a by-product. A second inert gas is injected the chamber along the second direction, and the bias power supply is turned off to purge the unnecessary part of the first precursor or the unnecessary part of the second precursor or the by-products.

Abstract: A deposition apparatus including a chamber having a deposition area and a non-deposition area, a gas intake device communicated with the chamber, a gas annulus disposed in the chamber and surrounding the gas intake device, a carrier disposed in the deposition area and a retaining annulus disposed in chamber and surrounding the carrier. The gas intake device is disposed corresponding to the deposition area and configured to draw a process gas into the deposition area. The gas annulus is configured to generate an annular gas curtain in the deposition area. The carrier carries a deposited object, wherein the gas annulus is located between the gas intake device and the carrier. The deposited object is surrounded by the annular gas curtain. The retaining annulus has a plurality of through holes. The retaining annulus is located between the gas annulus and the carrier.

Abstract: A deposition apparatus including a chamber, a platform, a shower head, a bias power supply, a first injection device, and a second injection device is provided. The platform and the shower head are disposed in the chamber, and the platform is configured to carry a substrate having a high aspect ratio structure. The bias power supply is coupled to the platform. The first injection device and the second injection device are connected to the chamber; the first injection device injects a first precursor or a first inert gas into the chamber along a first direction through the shower head, and the second injection device injects a second precursor or a second inert gas into the chamber along a second direction perpendicular to the first direction. When the first precursor or the second precursor is injected into the chamber, the bias power supply is turned on. When the first inert gas or the second inert gas is injected into the chamber, the bias power supply is turned off. A deposition method is also provided.

Abstract: A high electron mobility transistor (HEMT) device includes at least an AlN nucleation layer, a superlattice composite layer, a GaN electron transport layer, and an AlGaN barrier layer. The superlattice composite layer is disposed on the AlN nucleation layer, and the superlattice composite layer includes a plurality of AlN films and a plurality of GaN films stacked alternately to reduce device stress. The GaN electron transport layer is disposed on the superlattice composite layer, and the AlGaN barrier layer is disposed on the GaN electron transport layer.

Abstract: A visualization device for a flow field includes a chamber, a power supply, at least one pair of electrodes, and at least one flow field observation module. The flow field observation module includes a high-speed camera, a light detecting component, and a light filter component. The power supply outputs a voltage to generate a plasma, and the pair of electrodes is disposed in the chamber. The flow field observation module is disposed outside the chamber and captures an image of a fluid particle excited by the plasma toward the chamber. The light filter component is disposed between the high-speed camera and the chamber. The light detecting component obtains a light information within the chamber and sends the light information to the light filter component.

Abstract: A deposition apparatus including a chamber having a deposition area and a non-deposition area, a gas intake device communicated with the chamber, a gas annulus disposed in the chamber and surrounding the gas intake device, a carrier disposed in the deposition area and a retaining annulus disposed in chamber and surrounding the carrier. The gas intake device is disposed corresponding to the deposition area and configured to draw a process gas into the deposition area. The gas annulus is configured to generate an annular gas curtain in the deposition area. The carrier carries a deposited object, wherein the gas annulus is located between the gas intake device and the carrier. The deposited object is surrounded by the annular gas curtain. The retaining annulus has a plurality of through holes. The retaining annulus is located between the gas annulus and the carrier.

Abstract: A visualization device for a flow field includes a chamber, a power supply, at least one pair of electrodes, and at least one flow field observation module. The flow field observation module includes a high-speed camera, a light detecting component, and a light filter component. The power supply outputs a voltage to generate a plasma, and the pair of electrodes is disposed in the chamber. The flow field observation module is disposed outside the chamber and captures an image of a fluid particle excited by the plasma toward the chamber. The light filter component is disposed between the high-speed camera and the chamber. The light detecting component obtains a light information within the chamber and sends the light information to the light filter component.

Abstract: A flow field visualization device includes a chamber, a power supply, at least one pair of electrodes, and at least two high-speed cameras. The power supply outputs a voltage for plasma generation, and the pair of electrodes is disposed in the chamber. The pair of electrodes includes a first electrode and a second electrode. The first electrode has a plurality of first tips, the second electrode has a plurality of second tips, and the first tips and the second tips are aligned with each other. The pair of electrodes generates a periodically densely distributed plasma by exciting a gas in the chamber through the voltage from the power supply. The high-speed cameras are disposed outside the chamber and are positioned in different directions corresponding to the pair of electrodes in order to capture images of different dimensions.

Abstract: A gas shower device having gas curtain comprises a first gas shower unit for injecting a reaction gas, thereby forming a reaction gas region, and a second gas shower unit. The second gas shower unit arranged around a periphery of the first gas shower unit comprises a buffer gas chamber for providing a buffer gas, and a curtain distribution plate. The curtain distribution plate further comprises a plurality through holes for injecting the buffer gas, thereby forming a gas curtain around a periphery of the reaction gas region. In another embodiment, an apparatus for depositing film is provided by utilizing the gas shower device having gas curtain, wherein the gas curtain prevents the reaction gas in the reaction gas region from being affected directly by a vacuum pressure so that a residence time of reaction gas can be extended thereby increasing the utilization of reaction gas and film-forming efficiency.

Abstract: The disclosure is an evaporation apparatus and a method of evaporation using the same. The evaporation apparatus includes an evaporation chamber, an evaporation source, a carrying device, and a fluid disturbance device. The evaporation chamber has an evaporation space, the evaporation source is disposed at a lower part in the evaporation space, and the evaporation source is suitable for accommodating an evaporation source material. The carrying device is disposed to be rotatable about a reference axis as the center at an upper part in the evaporation space and is opposite to the evaporation source; the carrying device is suitable for carrying a substrate and positions the substrate between the evaporation source and the carrying device. The fluid disturbance device is suitable for injecting a disturbed fluid towards the carrying device in the evaporation space.

Abstract: An evaporation method in this disclosure is adapted for performing an evaporation process upon a surface of an evaporation target substrate. In an embodiment, an evaporation source plate is arranged to be heated by a heater so as to evaporate an evaporation material to its gaseous state, and then enable the gaseous evaporation material to travel passing through holes of a shutter device and thus spread toward the surface of the evaporation target substrate for depositing a film. Moreover, the evaporation method uses a transmission device for controlling the opening/closing of the holes, and there is a heating area formed at a position between the shutter device and the evaporation source plate for allowing the evaporation source plate, the plural holes, the heating area, the evaporation material and the heater to be arranged parallel to one another from the top to bottom.

Abstract: An evaporation method in this disclosure is adapted for performing an evaporation process upon a surface of an evaporation target substrate. In an embodiment, an evaporation source plate is arranged to be heated by a heater so as to evaporate an evaporation material to its gaseous state, and then enable the gaseous evaporation material to travel passing through holes of a shutter device and thus spread toward the surface of the evaporation target substrate for depositing a film. Moreover, the evaporation method uses a transmission device for controlling the opening/closing of the holes, and there is a heating area formed at a position between the shutter device and the evaporation source plate for allowing the evaporation source plate, the plural holes, the heating area, the evaporation material and the heater to be arranged parallel to one another from the top to bottom.

Abstract: A resistive random access memory and a method for fabricating the same are provided. The method includes forming a bottom electrode on a substrate; forming a metal oxide layer on the bottom electrode; forming an oxygen atom gettering layer on the metal oxide layer; forming a first top electrode sub-layer on the oxygen atom gettering layer; forming a second top electrode sub-layer on the first top electrode sub-layer, wherein the first top electrode sub-layer and the second top electrode sub-layer comprise a top electrode; and subjecting the metal oxide layer and the oxygen atom gettering layer to a thermal treatment, driving the oxygen atoms of the metal oxide layer to migrate into and react with the oxygen atom gettering layer, resulting in a plurality of oxygen vacancies within the metal oxide layer.

Abstract: An evaporation system and an evaporation method are disclosed, which are adapted for performing an evaporation process upon a surface of an evaporation target substrate. In an embodiment, the evaporation system comprises an evaporation material and an evaporation source plate, whereas the evaporation source plate is arranged to be heated by a heater so as to evaporate the evaporation material form its solid state into its gaseous state, and then enable the gaseous state evaporation material to travel passing through holes by the use of a shutter device so as to spread toward the surface of the evaporation target substrate for forming a film thereon. In addition, the evaporation system further comprises a transmission device, which is to be used for controlling the opening/closing of the holes of the shutter device.

Abstract: A resistive random access memory and a method for fabricating the same are provided. The method includes providing a structure comprising a substrate, a bottom electrode disposed on the substrate, a metal oxide layer disposed on the bottom electrode, and an oxygen atom gettering layer disposed on the metal oxide layer; and subjecting the structure to a thermal treatment, driving the oxygen atoms of the metal oxide layer to migrate into and react with the oxygen atom gettering layer, resulting in a plurality of oxygen vacancies within the metal oxide layer.

Abstract: A resistive random access memory and a method for fabricating the same are provided. The method includes forming a bottom electrode on a substrate; forming a metal oxide layer on the bottom electrode; forming an oxygen atom gettering layer on the metal oxide layer; forming a first top electrode sub-layer on the oxygen atom gettering layer; forming a second top electrode sub-layer on the first top electrode sub-layer, wherein the first top electrode sub-layer and the second top electrode sub-layer comprise a top electrode; and subjecting the metal oxide layer and the oxygen atom gettering layer to a thermal treatment, driving the oxygen atoms of the metal oxide layer to migrate into and react with the oxygen atom gettering layer, resulting in a plurality of oxygen vacancies within the metal oxide layer.

Abstract: A resistive random access memory and a method for fabricating the same are provided. The method includes forming a bottom electrode on a substrate; forming a metal oxide layer on the bottom electrode; forming an oxygen atom gettering layer on the metal oxide layer; forming a first top electrode sub-layer on the oxygen atom gettering layer; forming a second top electrode sub-layer on the first top electrode sub-layer, wherein the first top electrode sub-layer and the second top electrode sub-layer comprise a top electrode; and subjecting the metal oxide layer and the oxygen atom gettering layer to a thermal treatment, driving the oxygen atoms of the metal oxide layer to migrate into and react with the oxygen atom gettering layer, resulting in a plurality of oxygen vacancies within the metal oxide layer.

Abstract: Disclosed is an encapsulation film. An inorganic oxide film is formed on an organic sealing layer by an atomic layer deposition (ALD) to form the encapsulation film, wherein the organic sealing layer is a polymer containing hydrophilic groups. The organic sealing layer and the inorganic oxide layer have covalent bondings therebetween. The encapsulation film can solve the moisture absorption problem of conventional organic sealing layers, thereby being suitable for use as a package of optoelectronic devices.

Abstract: A gas shower device having gas curtain comprises a first gas shower unit for injecting a reaction gas, thereby forming a reaction gas region, and a second gas shower unit. The second gas shower unit arranged around a periphery of the first gas shower unit comprises a buffer gas chamber for providing a buffer gas, and a curtain distribution plate. The curtain distribution plate further comprises a plurality through holes for injecting the buffer gas, thereby forming a gas curtain around a periphery of the reaction gas region. In another embodiment, an apparatus for depositing film is provided by utilizing the gas shower device having gas curtain, wherein the gas curtain prevents the reaction gas in the reaction gas region from being affected directly by a vacuum pressure so that a residence time of reaction gas can be extended thereby increasing the utilization of reaction gas and film-forming efficiency.