Abstract: There is provided a semiconductor laser device including multiple-quantum wells of different widths that uses carrier redistribution to adjust the wavelength if light. The semiconductor laser device according to the present invention is fabricated by forming at least two groups of multiple-quantum wells on a semiconductor substrate, so that the carrier distribution within the multiple-quantum wells can be readjusted according to the variation of external environment, and thus the wavelength of light can be adjusted as well.

Abstract: A method for characterizing the quality of the interface between a silicon and a gate insulator in a MOS device includes the steps of: applying at least one current to the MOS device through the gate; detecting at least one electroluminescent signal corresponding to the silicon bandgap energy after the current flows through the MOS device; and outputting the electroluminescent waveform in the time domain. The quality of the interface between a silicon and a gate insulator in the MOS device is determined by analyzing the minority carrier lifetime in silicon. The invention also discloses a characterization system for implementing the method.