Abstract: A method for producing a gallium nitride layer using a pulsed laser is disclosed. The method includes (1) providing a substrate; (2) forming a zinc oxide layer on the substrate; and (3) forming a gallium nitride thin film on the zinc oxide layer by pulsed laser deposition (PLD).

Abstract: The present invention relates to a method for fabricating metal-ion-doped zinc sulfide nanoparticle and a method for generating a warm white light by using the metal-ion-doped zinc sulfide nanoparticle, and particularly relates to a method for fabricating manganese-doped zinc sulfide nanoparticle, which can emit a red light having a wavelength of 600 nm-650 nm, and a method for generating a warm white light by using the manganese-doped zinc sulfide nanoparticle to form a warm white light emission phosphor film.

Abstract: The present invention relates to a protective shell capable of providing naked-eye 3D imaging effect, and particularly relates to a protective shell of a handheld device capable of providing naked-eye 3D imaging effect to the handheld device. The protective shell includes a shell body and a 3D optical grating sheet. When the handheld device is put into the protective shell, the protective shell can provide a naked-eye 3D imaging effect for the handheld device by putting the 3D optical grating sheet on the display screen of the handheld device. Therefore, the user can see a 3D image on the display screen of the handheld device through the 3D optical grating sheet.

Abstract: The present invention relates to a method for fabricating an interlayer, and particularly relates to a method for fabricating an interlayer PCBM which is difficult to be dissolved in organic solvents. The solubility of the interlayer (PCBM) in organic solvents is decreased by polymerization of the interlayer (PCBM). Therefore, the thickness of the interlayer (PCBM) can be efficiently controlled, and the yield rate and efficiency of photoelectric devices can be improved.

Abstract: The present invention relates to a method for fabricating well-aligned zinc oxide microrods and nanorods and application thereof and particularly relates to a method for fabricating well-aligned zinc oxide microrods and nanorods on a general substrate by hydrothermal method and application thereof.

Abstract: An embodiment of this invention provides a method to produce a conductive thin film, which comprises: providing a substrate; forming a first metal oxide layer on the substrate; forming an indium-free metal layer on the first metal oxide layer; and forming a second metal oxide layer on the indium-free layer, wherein the first metal oxide layer, the indium-free metal layer, and the second oxide layer are all solution processed.

Abstract: The present invention relates to a LED (light-emitting diode) phosphor and fabricating method thereof, and particularly relates to a LED phosphor having a light-emitting thin film (or photoluminescence thin film) made of an organic material and a zinc oxide microstructure (or nanostructure) and a method for fabricating the LED phosphor by hydrothermal method and combination of the organic material and the zinc oxide microstructure (or nanostructure). In this invention, the light-emitting thin film (or photoluminescence thin film) made of the organic material and the zinc oxide microstructure (or nanostructure) is applied instead of rare earth elements to fabricate the LED phosphor. Therefore, the cost of the LED phosphor and the white LED can be reduced and the processes for fabricating the LED phosphor and the white LED can be simplified.

Abstract: An optoelectronic device is formed having a sandwich structure, which consists of an inorganic semiconductor layer, an organic semiconductor layer, and another inorganic semiconductor layer, where both of the two inorganic semiconductor layers are produced by a solution process.

Abstract: The present invention relates to a method for creating a naked-eye effect, and particularly relates to a method for creating a naked-eye effect without requiring a display hologram, special optical film, or 3D glasses. This method includes following steps: (1) detecting rotating angle or moving position of a portable device by a detecting unit; (2) creating a new image of an object shown in a display according to the rotating angle or moving position of the portable device by an image processing unit; and (3) displaying the new image of the object in the display instead of the original image of the object. By this method, a different image of the same object with different visual angles is displayed at different times, and it lets the brain of a person consider that the image of the object is a 3D image. Therefore, a naked-eye effect can be created.

Abstract: A flexible optoelectronic device having inverted electrode structure is disclosed. The flexible optoelectronic device having inverted electrode structure includes a flexible plastic substrate having a cathode structure, an n-type oxide semiconductor layer, an organic layer, and an anode. The n-type oxide semiconductor layer is disposed on the cathode structure. The organic layer is disposed on the n-type oxide semiconductor layer. The anode is electrically connected with the organic layer.

Abstract: A suspension or solution for organic optoelectronic device is disclosed in this invention. The composition of the suspension or solution includes at least one kind of micro/nano transition metal oxide and a solvent. The composition of the suspension or solution can selectively include at least one kind of transition metal oxide ions or a precursor of transition metal oxide. Moreover, the making method and applications of the suspension or solution is also disclosed in this invention.

Abstract: The present invention discloses a micro/nanostructure PN junction diode array thin-film solar cell and a method for fabricating the same, wherein a microstructure or sub-microstructure PN junction diode array, such as a nanowire array or a nanocolumns array, is transferred from a source-material wafer to two pieces of transparent substrates, which are respectively corresponding to two electric conduction types, to fabricate a thin-film solar cell. In the present invention, the micro/nanostructure PN junction diode array has advantages of a fine-quality crystalline semiconductor, and the semiconductor substrate can be reused to save a lot of semiconductor material. Besides, the present invention can make the best of sunlight energy via stacking up the solar cells made of different types of semiconductor materials to absorb different wavebands of the sunlight spectrum.

Abstract: The present invention relates to a method for producing a thin single crystal silicon having large surface area, and particularly relates to a method for producing a silicon micro and nanostructure on a silicon substrate (or wafer) and lifting off the silicon micro and nanostructure from the silicon substrate (or wafer) by metal-assisted etching. In this method, a thin single crystal silicon is produced in the simple processes of lifting off and transferring the silicon micro and nanostructure from the substrate by steps of depositing metal catalyst on the silicon wafer, vertically etching the substrate, laterally etching the substrate. And then, the surface of the substrate is processed, for example planarizing the surface of the substrate, to recycle the substrate for repeatedly producing thin single crystal silicons. Therefore, the substrate can be fully utilized, the purpose of decreasing the cost can be achieved and the application can be increased.

Abstract: The present invention relates to a method for producing zinc oxide on gallium nitride and application thereof, and particularly relates to a method for producing zinc oxide on gallium nitride by hydrothermal method and a method for recycling substrates by the zinc oxide.

Abstract: The present invention relates to a method for producing silicon waveguides on non-SOI substrate (non-silicon-on-insulator substrate), and particularly relates to a method for producing silicon waveguides on silicon substrate with a laser. This method includes the following steps: (1) forming a ridge structure with high aspect ratio on a non-SOI substrate; (2) melting and reshaping the ridge structure by laser illumination for forming a structure having broad upper part and narrow lower part; and (3) oxidizing the structure having broad upper part and narrow lower part to form a silicon waveguide.

Abstract: A flexible optoelectronic device having inverted electrode structure is disclosed. The flexible optoelectronic device having inverted electrode structure includes a flexible plastic substrate having a cathode structure, an n-type oxide semiconductor layer, an organic layer, and an anode. The n-type oxide semiconductor layer is disposed on the cathode structure. The organic layer is disposed on the n-type oxide semiconductor layer. The anode is electrically connected with the organic layer.

Abstract: A suspension or solution for an organic optoelectronic device is disclosed. The composition of the suspension or solution includes at least one kind of micro/nano transition metal oxide and a solvent. The composition of the suspension or solution can selectively include at least one kind of transition metal oxide ions or a precursor of transition metal oxide. Moreover, the method of making and applications of the suspension or solution are also disclosed.

Abstract: The present invention provides silicon nanostructures and their producing method. By employing a metal-assisted chemical etching method, the bottom of the produced silicon nanostructures, connected to the silicon substrate, is porous and side etched, such that the silicon nanostructures can be easily transferred to a hetero-substrate by a physical manner.

Abstract: A suspension or solution for an organic optoelectronic device is disclosed. The composition of the suspension or solution includes at least one kind of micro/nano transition metal oxide and a solvent. The composition of the suspension or solution can selectively include at least one kind of transition metal oxide ions or a precursor of transition metal oxide. Moreover, the method of making and applications of the suspension or solution are also disclosed.

Abstract: A method for forming a thin-film transistor (TFT) includes providing a substrate, forming a first patterned conducting layer on the substrate, forming an organic dielectric layer on the first patterned conducting layer and the substrate, forming a seeding layer on the organic dielectric layer, using the seeding layer as a crystal growing base to form an inorganic semiconductor layer on the seeding layer, and forming a second patterned conducting layer on the inorganic semiconductor layer.