Abstract: A metallic photonic box capable of intensifying light at a certain wavelength, includes: a metallic surrounding forming a resonance chamber; and an insulator layer, disposed in the resonance chamber, having a predetermined dimension defining a cut-off wavelength, which inhibits light of a wavelength greater than the cut-off wavelength from resonating, whereby when the metallic photonic box is heated to generate light radiation, the light radiation is intensified at a wavelength rage predetermined by the cut-off wavelength.

Abstract: A reflective type light valve projection device comprises an incident light source, a first and a second dichroic beam splitters/combiners, three light valves of the three primary colors and a projection lens. The light source provides a white light. The first dichroic beam splitter/combiner can reflect the first primary color and transmit the other two primary colors, and the second dichroic beam splitter/combiner can respectively reflect and transmit the two primary colors passing through the first dichroic beam splitter/combiner, hence completely separating the three primary colors. After the three primary colors are respectively modulated and reflected by the three light valves, they are combined by the first and second dichroic beam splitters/combiners to form a full color image, which is finally projected out by the projection lens. The optimum full-color projection effect can thus be accomplished with the least component.

Abstract: A reflective type light valve projection device comprises an incident light source, a first and a second dichroic beam splitters/combiners, three light valves of the three primary colors and a projection lens. The light source provides a white light. The first dichroic beam splitter/combiner can reflect the first primary color and transmit the other two primary colors, and the second dichroic beam splitter/combiner can respectively reflect and transmit the two primary colors passing through the first dichroic beam splitter/combiner, hence completely separating the three primary colors. After the three primary colors are respectively modulated and reflected by the three light valves, they are combined by the first and second dichroic beam splitters/combiners to form a full color image, which is finally projected out by the projection lens. The optimum full-color projection effect can thus be accomplished with the least component.

Abstract: A metallic photonic box capable of intensifying light at a certain wavelength, includes: a metallic surrounding forming a resonance chamber; and an insulator layer, disposed in the resonance chamber, having a predetermined dimension defining a cut-off wavelength, which inhibits light of a wavelength greater than the cut-off wavelength from resonating, whereby when the metallic photonic box is heated to generate light radiation, the light radiation is intensified at a wavelength rage predetermined by the cut-off wavelength.

Abstract: The present invention discloses a method of improving an electroluminescent efficiency of a MOS device by etching a semiconductor substrate thereof. A chemical etching process is performed to remove surface states or surface defects located on the surface of a silicon substrate before a nanoparticle layer and a conducting layer is formed on the silicon substrate, in order that the non-radiative electron-hole recombination centers located on the surface of silicon substrate is suppressed. Accordingly, the percentage of radiative electron-hole recombination is heightened and the electroluminescent efficiency of a MOS light emitting device is drastically enhanced. Advantageously, the chemical etching step is able to create a nanostructure on the surface of the silicon substrate to increase the probability of the collision of electron-hole pairs and phonons, and the electroluminescent efficiency of a MOS light emitting device is improved as well.

Abstract: This invention regards to novel light emitting device based on indirect bandgap materials. This device makes efficient electroluminescence possible in indirect-bandgap materials. With the quantum mechanically tunneling effect and carrier confinement, and/or small-scale roughness (in nano-meter range), and/or special (TO) phonon-assisted processes, the additional momentum required for radiative recombination of electrons and holes in indirect-bandgap materials could be provided to enhance luminescence at bandgap energy. Also, the tunneled carriers in the upper bands of large energy could directly transit to the bottom of bands by emitting photons at corresponding energy different from bandgap energy.

Abstract: The present invention discloses a simple, low cost method to fabricate light emitting source using luminescent colloid nanoparticles. It uses monodispersed colloid light emitting nanoparticles of oxides, semiconductors, and polymers to fabricate high quality, narrow bandwidth light emitting source. The colloid particles can be dispersed homogeneously in liquid that can be coated easily on a substrate using a simple coating method such as spray, dip coating or spin coating. There is no restriction on the size or shape of the substrate. Therefore, a low cost, large area, high efficiency and reproducible light emitting source can be made easily.

Abstract: Disclosed is a method of increasing the luminescent bandwidth of a photoelectric semiconductor device. Such method uses separate confinement heterostructure (SCH) region having a shortened width to reduce the time for holes to pass therethrough and curtail the difference between the time for holes to enter the quantum well structures and the time for electrons to enter the quantum well structures, and thereby an even uniform carrier distribution can be obtained. Accordingly, each quantum well structure is able to receive carrier and a better luminescent bandwidth can be produced. Such method can be applied in the production of wavelength-tunable semiconductor laser device to enlarge the tunable range of wavelength of the semiconductor laser device, and also such method is quite convenient for testing semiconductor laser device. Furthermore, such method can also be applied in an optical communication system to replace other versatile components, and thus reduce the cost necessary for system integration.

Abstract: Disclosed is a method of increasing the tunable range of wavelength of a semiconductor laser by rearranging the configuration of the semiconductor laser and the semiconductor laser formed thereby. Such method uses a specific arrangement of quantum well structures to minimize the diversity between the electron distribution and the hole distribution within the quantum well structures, and a uniform carrier distribution can be obtained within the quantum well structures. Accordingly, each quantum well structure is able to receive carrier and a better luminescent bandwidth can be produced, and the tunable range of wavelength of the semiconductor laser can be extended to a wide extent. Such method is quite convenient for testing semiconductor laser device. Furthermore, such method can also be applied in an optical communication system to replace other versatile components, and thus reduce the cost necessary for system integration.

Abstract: A high-power semiconductor laser is mainly a light-emitting semiconductor comprising a waveguide structure. The waveguide structure is provided with a plurality of waveguides capable of transmitting light wave, in which a reflective surface for reflecting light wave is formed on a boundary defined by the waveguide and the light-emitting semiconductor unit. A cleaved facet of the light-emitting semiconductor unit has a plurality of interfaces, which are formed by extending the waveguide to reach the cleaved facet of the light-emitting semiconductor unit. The interfaces are provided for either reflecting or transmitting light wave, in which at least a interface would serve for a light-transmitting mechanism. The output power of the present invention could be heightened up to 2 W with an even intensity distribution for a close field without bringing about any catastrophic optical damage (COD).

Abstract: A method for characterizing the quality of the interface between a silicon and a gate insulator in a MOS device includes the steps of: applying at least one current to the MOS device through the gate; detecting at least one electroluminescent signal corresponding to the silicon bandgap energy after the current flows through the MOS device; and outputting the electroluminescent waveform in the time domain. The quality of the interface between a silicon and a gate insulator in the MOS device is determined by analyzing the minority carrier lifetime in silicon. The invention also discloses a characterization system for implementing the method.

Abstract: The present invention discloses a method of improving an electroluminescent efficiency of a MOS device by etching a semiconductor substrate thereof. A chemical etching process is performed to remove surface states or surface defects located on the surface of a silicon substrate before a nanoparticle layer and a conducting layer is formed on the silicon substrate, in order that the non-radiative electron-hole recombination centers located on the surface of silicon substrate is suppressed. Accordingly, the percentage of radiative electron-hole recombination is heightened and the electroluminescent efficiency of a MOS light emitting device is drastically enhanced. Advantageously, the chemical etching step is able to create a nanostructure on the surface of the silicon substrate to increase the probability of the collision of electron-hole pairs and phonons, and the electroluminescent efficiency of a MOS light emitting device is improved as well.

Abstract: A metal-oxide-silicon (MOS) device that at least includes a silicon-based substrate, a nanometer scaled oxide layer formed on the silicon-based substrate and a metal layer formed on the oxide layer, is disclosed. The present invention basically uses a nanometer scaled oxide structure that result in a non-uniform tunneling current to enhance light-emitting efficiency. The manufacturing steps of the MOS device according to the present invention are quite similar to those of conventional MOS device, so the MOS device according to the present invention can be integrated with the current silicon-based integrated circuit chip. Further the application fields of the silicon-based chip and material can be extended. The cost of MOS device can be reduced and its practicality can be increased.

Abstract: A pattern identification system includes an illumination device, a video camera unit, a controller and a programmable identification member. The illumination device projects light on a sample pattern disposed in the system. The video camera unit captures a first image for measuring a reference coordinate of the sample pattern. The video camera unit is moved to a predetermined position by the controller. The controller controls the video camera to magnify an image sufficient for identification so as to allow capturing an identifiable image of difference with respect to a programmed feature. The video camera unit captures a second identifiable image of the sample pattern and sends it to the programmable identification member for identifying the sample pattern.

Abstract: A semiconductor laser having an emitting wavelength is disclosed. The semiconductor laser having an emitting wavelength includes plural quantum well groups respectively having quantized energy levels wherein the quantized energy levels are mutually different. The emitting wavelength of the semiconductor laser is set in one of the plural quantum well groups having a relatively high quantized energy level for reducing a temperature effect on the semiconductor laser.

Abstract: A resonating cavity system of a tunable multi-wavelength semiconductor laser. The system has a laser, a collimating lens, a grating, a slit plate, and adjustable mirrors. The laser has two ends. The first end is coupled to the cavity, and the second end outputs the laser beam. The grating is located in the lasing path between the first end of the semiconductor laser and the plate, and the plate is located before the adjustable mirrors. Each adjustable mirror is aligned to the corresponding slit of the plate. Lasing paths extend from the first end of the laser, through the grating, the lens, a plurality of the slits of the plate, to the adjustable mirrors. Each mirror can be adjusted independently to ensure each beam is reflected accurately back to each resonating path. Thereby, a feature of equal lasing gains of all the resonating paths is guaranteed.

Abstract: A resonating cavity system of a tunable multi-wavelength semiconductor laser. The system has a laser, a collimating lens, a grating, a slit plate, and adjustable mirrors. The laser has two ends. The first end is coupled to the cavity, and the second end outputs the laser beam. The grating is located in the lasing path between the first end of the semiconductor laser and the plate, and the plate is located before the adjustable mirrors. Each adjustable mirror is aligned to the corresponding slit of the plate. Lasing paths extend from the first end of the laser, through the grating, the lens, a plurality of the slits of the plate, to the adjustable mirrors. Each mirror can be adjusted independently to ensure each beam is reflected accurately back to each resonating path. Thereby, a feature of equal lasing gains of all the resonating paths is guaranteed.

Abstract: The present invention discloses a simple, low cost method to fabricate light emitting source using luminescent colloid nanoparticles. It uses monodispersed colloid light emitting nanoparticles of oxides, semiconductors, and polymers to fabricate high quality, narrow bandwidth light emitting source. The colloid particles can be dispersed homogeneously in liquid that can be coated easily on a substrate using a simple coating method such as spray, dip coating or spin coating. There is no restriction on the size or shape of the substrate. Therefore, a low cost, large area, high efficiency and reproducible light emitting source can be made easily.

Abstract: The present invention provides a technology for increasing the spectral width of semiconductor optical amplifiers, employing different separate confinement heterostructures (SCH's) so as to form non-identical multiple quantum wells such that the semiconductor photo-electronic devices have better temperature characteristics and more reliable modulation characteristics. If such a technology is used in the fabrication of semiconductor laser with a tunable wavelength, it is possible to achieve a large range of modulated wavelength, which is very useful in optical communication.

Abstract: A metal-oxide-silicon (MOS) device that at least includes a silicon-based substrate, a nanometer scaled oxide layer formed on the silicon-based substrate and a metal layer formed on the oxide layer, is disclosed. The present invention basically uses a nanometer scaled oxide structure that result in a non-uniform tunneling current to enhance light-emitting efficiency. The manufacturing steps of the MOS device according to the present invention are quite similar to those of conventional MOS device, so the MOS device according to the present invention can be integrated with the current silicon-based integrated circuit chip. Further the application fields of the silicon-based chip and material can be extended. The cost of MOS device can be reduced and its practicality can be increased.