Patents by Inventor Ching-Han Huang

Ching-Han Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170073221
    Abstract: A semiconductor device package includes a carrier, a wall disposed on a top surface of the carrier, a cover, and a sensor element. The cover includes a portion protruding from a bottom surface of the cover, where the protruding portion of the cover contacts a top surface of the wall to define a space. The sensor element is positioned in the space.
    Type: Application
    Filed: September 16, 2015
    Publication date: March 16, 2017
    Inventors: Ching-Han Huang, Hsun-Wei Chan, Lu-Ming Lai
  • Publication number: 20150091108
    Abstract: The present disclosure provides a package structure and a manufacturing method. The package structure includes a substrate, a cover, a conductive pattern, and a sensing component. The cover is disposed on the substrate. The cover and the substrate define an accommodation space. The conductive pattern includes a conductive line. The conductive line is disposed on an internal surface of the cover exposed by the accommodation space, and is electrically connected to the substrate. The sensing component is disposed on the internal surface of the cover, and is electrically connected to the conductive line.
    Type: Application
    Filed: September 29, 2014
    Publication date: April 2, 2015
    Inventors: Ching-Han HUANG, Lu-Ming LAI
  • Patent number: 8088672
    Abstract: A method for producing a thin film includes the following steps: providing a primary substrate; forming an etching stop layer on the primary substrate; forming a sacrificial layer on the etching stop layer; implanting gas ions to form an ion implantation peak layer, which defines an effective transferred layer and a remnant layer; and separating the effective transferred layer from the remnant layer. The thickness of the effective transferred layer can be effectively determined by controlling the thickness of the sacrificial layer. Moreover, the thickness of the effective transferred layer can be uniform and then the effective transferred layer can become a nanoscale thin film.
    Type: Grant
    Filed: June 20, 2008
    Date of Patent: January 3, 2012
    Inventors: Tien-Hsi Lee, Ching-Han Huang, Chao-Liang Chang, Yao-Yu Yang
  • Publication number: 20110097873
    Abstract: A method for producing a thin film includes the following steps: providing a primary substrate; forming an etching stop layer on the primary substrate; forming a sacrificial layer on the etching stop layer; implanting gas ions to form an ion implantation peak layer, which defines an effective transferred layer and a remnant layer; and separating the effective transferred layer from the remnant layer. The thickness of the effective transferred layer can be effectively determined by controlling the thickness of the sacrificial layer. Moreover, the thickness of the effective transferred layer can be uniform and then the effective transferred layer can become a nanoscale thin film.
    Type: Application
    Filed: June 20, 2008
    Publication date: April 28, 2011
    Applicant: Tien-Hsi Lee
    Inventors: Tien-Hsi Lee, Ching-Han Huang, Chao-Liang Chang, Yao-Yu Yang
  • Publication number: 20100044827
    Abstract: A method for manufacturing a substrate structure comprising a film and a substrate structure made by this method are disclosed. The method for manufacturing a substrate structure comprising a film includes the steps of: providing a target substrate; providing an initial substrate; forming an embrittlement-layer on the initial substrate; forming a device layer on the embrittlement-layer; doping with hydrogen ions; bonding the device layer with the target substrate; and separating the device layer from the initial substrate. The hydrogen ions are added into the embrittlement-layer through doping, before an energy treatment is applied to embrittle and break the embrittlement-layer, thereby separating the device layer from the initial substrate. Since the hydrogen ions are added into the embrittlement-layer through doping, a crystal lattice structure of the device layer will not be damaged during the step of doping with hydrogen ions.
    Type: Application
    Filed: August 22, 2008
    Publication date: February 25, 2010
    Inventors: Tien-Hsi Lee, Chao-Sung Lai, Ching-Han Huang, Chia-Che Ho, Ping-Jung Wu, Shou-Jiun Jeng
  • Publication number: 20060216553
    Abstract: A fuel cell with bipolar plates having micro channels and its manufacturing method are disclosed. The structure of this fuel cell includes a pair of bipolar plates and a catalytic portion. The bipolar plate has a gas inlet, a gas outlet, a main channel, several blocking portions, and many micro channels formed on the blocking portions and connecting two adjacent sections of the main channel. The manufacturing method includes (1) preparing step, (2) first-layer structure manufacturing step, (3) second-layer structure manufacturing step, and (4) complete step. It can increase the gas contacting area. It can drain off water more effectively. It is suitable for mass production.
    Type: Application
    Filed: March 22, 2006
    Publication date: September 28, 2006
    Inventors: Shuo-Jen Lee, Yu-Pang Chen, Ching-Han Huang
  • Publication number: 20050102819
    Abstract: A surface film structure of a metallic bipolar plate for fuel cells and a method for producing the same are provided. The method is firstly to perform flow channel machining on a bipolar plate, then to surface grind the plate so as to remove any oxide film on the plate, to degrease the plate by dipping the plate into an alkaline solution for ultrasonic cleaning, to remove from the alkaline solution and de-ionize the plate by de-ion water, again to dip the plate into a nitric acid, to de-ionize the plate after being removed from the nitric acid, to dip the plate into pure water for further ultrasonic cleaning, and finally to arrange the plate removed from the pure water into an ECM tank for forming a surface film on the plate with both chemical and electrochemical stability. The surface film including a Cr composition of 40˜75%, an Fe composition of 10˜30%, and an Ni composition of 15˜30% provides the metallic bipolar plate superior properties in corrosion-resistance, conductivity, and roughness.
    Type: Application
    Filed: August 20, 2004
    Publication date: May 19, 2005
    Inventors: Shuo-Jen Lee, Ching-Han Huang, Jian-Jang Lai, Yu-Pang Chen