Abstract: A testing holder for a chip unit, a multi site holding frame for plural chip units and a method for testing a die thereof are provided. The proposed multi site holding frame for testing plural chip units simultaneously includes a first holder frame having a plurality of testing holders. Each of the plurality of testing holders includes a holder body containing a specific one of the plural chip units, and a pressure releasing device formed on the holder body to release an insertion pressure when the specific one of the plural chip units is inserted in the holder body.

Abstract: The present disclosure provides a system and method for providing electrostatic discharge protection. A probe card assembly is provided which is electrically connected to a plurality of input/output channels. The probe card assembly can be contacted with a secondary assembly having an interposer electrically connected to one or more wafers each wafer having a device under test. Voltage can be forced on ones of the plural input/output channels of the probe card assembly to slowly dissipate charges resident on the wafer to thereby provide electrostatic discharge protection. A socket assembly adaptable to accept a 3DIC package is also provided, the assembly having a loadboard assembly electrically connected to a plurality of input/output channels. Once the 3DIC package is placed within the socket assembly, voltage is forced on ones of the input/output channels to slowly dissipate charges resident on the 3DIC package to thereby provide electrostatic discharge protection.

Abstract: A method includes testing a first device and a second device identical to each other and comprising integrated circuits. The testing of the first device is performed according to a first test sequence of the first device, wherein the first test sequence includes a plurality of ordered test items, and wherein the first test sequence includes a test item. A test priority of the test item is calculated based on a frequency of fails of the test item in the testing of a plurality of devices having an identical structure as the first device. The first test sequence is then adjusted to generate a second test sequence in response to the test priority of the test item, wherein the second test sequence is different from the first test sequence. The second device is tested according to the second test sequence.

Abstract: Disclosed herein is a method of probe testing dies, the method comprising loading a wafer having a first die and a second die into a prober and bringing probes of the prober into contact with first contact pads of the first die according to first probe parameters. A first probe contact test of first values of the contact between the probes and the first contact pads is performed, and a die test of the first die is performed after performing the probe contact test. Results of the die test and results of the probe contact test are saved and second probe parameters are automatically generated based on at least the results of the first probe contact test.

Abstract: The present disclosure provides a system and method for providing electrostatic discharge protection. A probe card assembly is provided which is electrically connected to a plurality of input/output channels. The probe card assembly can be contacted with a secondary assembly having an interposer electrically connected to one or more wafers each wafer having a device under test. Voltage can be forced on ones of the plural input/output channels of the probe card assembly to slowly dissipate charges resident on the wafer to thereby provide electrostatic discharge protection. A socket assembly adaptable to accept a 3DIC package is also provided, the assembly having a loadboard assembly electrically connected to a plurality of input/output channels. Once the 3DIC package is placed within the socket assembly, voltage is forced on ones of the input/output channels to slowly dissipate charges resident on the 3DIC package to thereby provide electrostatic discharge protection.

Abstract: A fan-out wafer comprises a first IC die having at least a first boundary scan cell (BSC) and a second BSC. The first BSC is coupled to a first demultiplexer. The second BSC is coupled to a first pad. A second IC die has at least a third BSC coupled to a second demultiplexer, and a second pad connected to the first pad. A first master path connects the first demultiplexer to the second demultiplexer. A first slave path connects the first demultiplexer to the second demultiplexer. The first pad and second pad are located between the first master path and the first slave path.

Abstract: A package component includes a stack-probe unit, which includes a first-type connector, and a second-type connector connected to the first-type connector. The first-type connector and the second-type connector are exposed through a surface of the package component.

Abstract: A composite integrated circuit (IC) includes a first circuit layer, a second circuit layer having a first chip and a second chip, and a first wireless power transfer (WPT) device in the first chip or the first circuit layer. The first WPT device generates a power supply voltage by extracting energy from an electromagnetic signal. A first tracking circuit in the second chip or the first circuit layer is powered by the power supply voltage from the first WPT device and stores or outputs tracking data in response to an instruction extracted from the electromagnetic signal.

Abstract: A package component includes a stack-probe unit, which includes a first-type connector, and a second-type connector connected to the first-type connector. The first-type connector and the second-type connector are exposed through a surface of the package component.

Abstract: A circuit is disclosed that includes a signal-forcing path, a discharging path, a contact probe, a monitoring probe and a switch module. The signal-forcing path is connected to a signal source. The discharging path is connected to a discharging voltage terminal. The contact probe contacts a pad module of an under-test device. The monitoring probe generates a monitored voltage associated with the pad module. The switch module is operated in a discharging mode to connect the contact probe to the discharging path when the monitored voltage does not reach a threshold voltage such that the under-test device is discharged and is operated in an operation mode to connect the contact probe to the signal-forcing path when the monitored voltage reaches the threshold voltage such that a signal generated by the signal source is forced to the under-test device.

Abstract: A method is disclosed that includes the operations outlined below. For a plurality of dies on a test fixture, an antenna distance between each of first antennas of one of the dies and every one of first antennas of the other dies is determined. The dies are categorized into die groups, wherein the antenna distance between each of the first antennas of one of the dies in one of the die groups and every one of the first antennas of the other dies in the same one of the die groups is larger than an interference threshold. Test processes are sequentially performed on the die groups. Each of the test processes is performed according to signal transmissions between the first antennas and second antennas of the under-test device each positionally corresponds to one of the first antennas.

Abstract: A three-dimensional integrated circuit (3DIC) and wireless information access methods thereof are provided. The proposed 3DIC includes a semiconductor structure, and a wireless power device (WPD) formed on the semiconductor structure for wirelessly receiving a power for operating a function selected from a group consisting of probing the semiconductor structure, testing the semiconductor structure and accessing a first information from the semiconductor structure.

Abstract: A fan-out wafer comprises a first IC die having at least a first boundary scan cell (BSC) and a second BSC. The first BSC is coupled to a first demultiplexer. The second BSC is coupled to a first pad. A second IC die has at least a third BSC coupled to a second demultiplexer, and a second pad connected to the first pad. A first master path connects the first demultiplexer to the second demultiplexer. A first slave path connects the first demultiplexer to the second demultiplexer. The first pad and second pad are located between the first master path and the first slave path.

Abstract: A device for testing a bottom package of an integrated fan-out (InFO) Package-on-Package (PoP) comprises a bottom fixture having a space to accommodate the bottom package during testing and a detachable top cover, configured for conducting at least one test of the bottom package, wherein one or both of the bottom fixture and the top cover have a plurality of probing contacts for testing of the bottom package and wherein the device can be opened for placement of the bottom package under testing, and the cover is attachable to the bottom fixture for conducting the testing.

Abstract: A circuit that includes a stacked circuit layer, a plurality of test contact points and a comparator is disclosed. The stacked circuit layer includes a plurality of reference capacitors each having a reference capacitance. Each of the test contact points is electrically connecting to an under-test capacitor of an under-test module. The comparator compares the reference capacitance of one of the reference capacitors with an under-test capacitance of the under-test capacitor corresponding to one of the test contact points to measure a range of the under-test capacitance.

Abstract: A wafer probing system includes a plurality of contacting pins connected to a test head. The system further includes a probe card electrically connectable with the test head, where the probe card includes a circuit board having a plurality of contact pads on opposite sides of the circuit board.

Abstract: Among other things, one or more techniques or systems for evaluating a tiered semiconductor structure, such as a stacked CMOS structure, for misalignment are provided. In an embodiment, a connectivity test is performed on vias between a first layer and a second layer to determine a via diameter and a via offset that are used to evaluate misalignment. In an embodiment, a connectivity test for vias within a first layer is performed to determine an alignment rotation based upon which vias are connected through a conductive arc within a second layer or which vias are connected to a conductive pattern out of a set of conductive patterns. In this way, the via diameter, the via offset, or the alignment rotation are used to evaluate the tiered semiconductor structure, such as during a stacked CMOS process, for misalignment.

Abstract: A test structure is provided for testing a semiconductor structure having a plurality of tiers. The test structure includes at least one conductive loop. Each respective conductive loop has ends defining at least one opening between the ends, and is embedded inside one or more of the plurality of tiers in the semiconductor structure. The test structure also includes at least two test pads on each respective conductive loop. The at least two test pads are connected with respective ends of each respective conductive loop. The test structure is configured to permit detection of defects within each of the plurality of tiers in the semiconductor structure if the defects exist, using a testing apparatus.

Abstract: A method comprises connecting a testing setup having a plurality of probes to a device under test having a plurality of vias, wherein a probe is aligned with a corresponding via of the device under test and conducting a plurality of via electrical characteristic tests through a conductive path comprising the vias, the probes and a plurality of conductive devices, each of which connects two adjacent probes, wherein the conductive devices are in the testing setup.

Abstract: In a method of testing a plurality of through silicon vias (TSVs) chained together by interconnect on a substrate, a test signal is applied to a first test pad among a plurality of test pads, and a return signal is measured at a second test pad among the plurality of test pads. At least one test pad of the plurality of test pads is grounded to the substrate. The remaining test pads of the plurality of test pads are either connected to the plurality of chained TSVs or are grounded.