Abstract: A device includes a probe card, which further includes a chip. The chip includes a semiconductor substrate, a test engine disposed in the chip, wherein the test engine comprises a device formed on the semiconductor substrate, wherein the device is selected from the group consisting essentially of a passive device, an active device, and combinations thereof. A plurality of probe contacts is formed on a surface of the chip and electrically connected to the test engine.

Abstract: A wafer probing method includes calibrating a wafer probing system, checking continuity between probe pins of the wafer probing system and respective conductors of a wafer under test, and identifying at least an interconnect structure in the wafer under test to determine whether a fault exists.

Abstract: A three dimensional (3D) integrated circuit (IC) testing apparatus includes a plurality of connection devices. When a device under test (DUT) such as an interposer or a 3D IC formed by a plurality of 3D dies operates in a testing mode, the 3D IC testing apparatus is coupled to the DUT via a variety of interface channels such as probes. The connection devices and a variety of through silicon vias (TSVs) in the DUT form a TSV chain so that an electrical characteristic test of the variety of TSVs can be tested all at once.

Abstract: A system for testing a wafer includes a probe card and a wafer. The probe card includes at least one first probe site and at least one second probe site. The wafer includes a plurality of dies. The at least one first probe site is arranged for a first test, and the at least one second probe site is arranged for a second test. Each of the plurality of dies corresponds to first probe pads and second probe pads. Each of the at least one first probe site is arranged to touch the first probe pads of each of the plurality of dies. Each of the at least one second probe site is arranged to touch the second probe pads of each of the plurality of dies.

Abstract: A device, such as a 3DIC stacked device includes a first device under test (DUT) connected to a first force pad by a first through substrate via (TSV) stack and connected to a first sense pad by a second TSV stack. The device further includes a second DUT stacked above the first DUT and connected to a second force pad and a second force pad by a second third TSV and connected to a second sense pad by a fourth TSV. Functional blocks on either the first or second blocks can be accessed for testing by way of the TSVs. In some applications the TSVs are vertically aligned to form TSV stacks.

Abstract: A testing apparatus with reduced warping of the probe card and a method of reducing warping of a probe card of a testing apparatus are disclosed. The testing apparatus can include a testing head and a platform opposite the testing head, where the testing head and platform move relative to one another to bring a sample into contact with probing tips of the testing apparatus. The testing head can include a probe card printed circuit board, a stiffener, a discontinuous backer and a plurality of probing tips. The stiffener can be coupled to and reinforcing the probe card. The discontinuous backer can extend from the probe card to the stiffener, and can include at least one unfilled void extending from the stiffener to the probe card. The plurality of probing tips can extend from a distal end of the testing head.

Abstract: A plurality of sets of test conditions of a die in a stacked system is established, wherein the plurality of test conditions are functions of temperatures of the die, and wherein the stacked system comprises a plurality of stacked dies. A temperature of the die is measured. A respective set of test conditions of the die is found from the plurality of sets of test conditions, wherein the set of test conditions corresponds to the temperature. The die is at the temperature using the set of test conditions to generate test results.

Abstract: A system for testing a device under test (DUT) includes a probe card and a test module. The probe card includes probe beds electrically coupled to a circuit board and a first plurality of electrical contacts coupled to the circuit board, which are for engaging respective ones of a plurality of electrical contacts of a test equipment module. Probes are coupled to respective probe beds and are disposed to engage electrical contacts of the DUT. The probe card includes a second plurality of electrical contacts coupled to the circuit board. The first and second pluralities of contacts are mutually exclusive. The test module includes a memory, a processor, and a plurality of electrical contacts electrically coupled to respective ones of the second plurality of electrical contacts of the probe card. The circuit board includes a first electrical path for electrically coupling the test equipment module to the test module.

Abstract: The present disclosure provides a system and method for providing electrostatic discharge protection. A probe card assembly is provided which is electrically connected to a plurality of input/output channels. The probe card assembly can be contacted with a secondary assembly having an interposer electrically connected to one or more wafers each wafer having a device under test. Voltage can be forced on ones of the plural input/output channels of the probe card assembly to slowly dissipate charges resident on the wafer to thereby provide electrostatic discharge protection. A socket assembly adaptable to accept a 3DIC package is also provided, the assembly having a loadboard assembly electrically connected to a plurality of input/output channels. Once the 3DIC package is placed within the socket assembly, voltage is forced on ones of the input/output channels to slowly dissipate charges resident on the 3DIC package to thereby provide electrostatic discharge protection.

Abstract: A three-dimensional integrated circuit (3DIC) and wireless information access methods thereof are provided. The proposed 3DIC includes a semiconductor structure, and a wireless power device (WPD) formed on the semiconductor structure for wirelessly receiving a power for operating a function selected from a group consisting of probing the semiconductor structure, testing the semiconductor structure and accessing a first information from the semiconductor structure.

Abstract: An embodiment is a method. The method comprises providing a substrate comprising a die area. The die area comprises sections of pad patterns, and first sections of the sections each comprise a first uniform pad pattern. The method further comprises probing a first one of the first sections with a first probe card; stepping the first probe card to a second one of the first sections; and probing the second one of the first sections with the first probe card.

Abstract: A package component includes a stack-probe unit, which includes a first-type connector, and a second-type connector connected to the first-type connector. The first-type connector and the second-type connector are exposed through a surface of the package component.

Abstract: A device includes a probe card, which further includes a chip. The chip includes a semiconductor substrate, a test engine disposed in the chip, wherein the test engine comprises a device formed on the semiconductor substrate, wherein the device is selected from the group consisting essentially of a passive device, an active device, and combinations thereof. A plurality of probe contacts is formed on a surface of the chip and electrically connected to the test engine.

Abstract: A wafer probing method includes calibrating a wafer probing system, checking continuity between probe pins of the wafer probing system and respective conductors of a wafer under test, and identifying at least an interconnect structure in the wafer under test to determine whether a fault exists.

Abstract: A plurality of through silicon vias (TSVs) on a substrate or in a 3 dimensional integrated circuit (3DIC) are chained together. TSVs are chained together to increase the electrical signal. A plurality of test pads are used to enable the testing of the TVSs. One of the test pads is grounded. The remaining test pads are either electrically connected to TSVs in the chain or grounded.

Abstract: An embodiment is a method. The method comprises providing a substrate comprising a die area. The die area comprises sections of pad patterns, and first sections of the sections each comprise a first uniform pad pattern. The method further comprises probing a first one of the first sections with a first probe card; stepping the first probe card to a second one of the first sections; and probing the second one of the first sections with the first probe card.

Abstract: A three dimensional (3D) integrated circuit (IC) testing apparatus comprises a plurality of connection devices. When a device under test (DUT) such as an interposer or a 3D IC formed by a plurality of 3D dies operates in a testing mode, the 3D IC testing apparatus is coupled to the DUT via a variety of interface channels such as probes. The connection devices and a variety of through silicon vias (TSVs) in the DUT form a TSV chain so that a electrical characteristic test of the variety of TSVs can be tested all at once.

Abstract: A plurality of sets of test conditions of a die in a stacked system is established, wherein the plurality of test conditions are functions of temperatures of the die, and wherein the stacked system comprises a plurality of stacked dies. A temperature of the die is measured. A respective set of test conditions of the die is found from the plurality of sets of test conditions, wherein the set of test conditions corresponds to the temperature. The die is at the temperature using the set of test conditions to generate test results.

Abstract: A device, such as a 3DIC stacked device includes a first device under test (DUT) connected to a first force pad by a first through substrate via (TSV) stack and connected to a first sense pad by a second TSV stack. The device further includes a second DUT stacked above the first DUT and connected to a second force pad and a second force pad by a second third TSV and connected to a second sense pad by a fourth TSV. Functional blocks on either the first or second blocks can be accessed for testing by way of the TSVs. In some applications the TSVs are vertically aligned to form TSV stacks.

Abstract: A method includes testing a first device and a second device identical to each other and comprising integrated circuits. The testing of the first device is performed according to a first test sequence of the first device, wherein the first test sequence includes a plurality of ordered test items, and wherein the first test sequence includes a test item. A test priority of the test item is calculated based on a frequency of fails of the test item in the testing of a plurality of devices having an identical structure as the first device. The first test sequence is then adjusted to generate a second test sequence in response to the test priority of the test item, wherein the second test sequence is different from the first test sequence. The second device is tested according to the second test sequence.