Patents by Inventor Ching-Wei Wu

Ching-Wei Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11450367
    Abstract: A circuit includes a selection circuit configured to receive a first address from a first port and a second address from a second port, a first latch circuit coupled to the selection circuit and configured to output each of the first address and the second address received from the selection circuit, a decoder, and a control circuit. The control circuit is configured to generate a plurality of signals configured to cause the decoder to decode each of the first address and the second address.
    Type: Grant
    Filed: February 23, 2021
    Date of Patent: September 20, 2022
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., TSMC CHINA COMPANY, LIMITED, TSMC NANJING COMPANY, LIMITED
    Inventors: XiuLi Yang, Ching-Wei Wu, He-Zhou Wan, Kuan Cheng, Luping Kong
  • Patent number: 11437498
    Abstract: A method includes forming a fin on a substrate, forming an insulating material over the fin, recessing the insulating material to form an isolation region surrounding the fin, wherein an upper portion of the fin protrudes above the isolation region, performing a trimming process to reduce a width of the upper portion of the fin, and forming a gate structure extending over the isolation region and the upper portion of the fin.
    Type: Grant
    Filed: December 7, 2020
    Date of Patent: September 6, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chung-Shu Wu, Ying-Ya Hsu, Ching-Yu Pan, Hsiu-Hao Tsao, An Chyi Wei, Yuan-Hung Chiu
  • Publication number: 20220277781
    Abstract: A memory circuit includes a NAND logic gate, a first N-type transistor, a second N-type transistor, a first inverter and a first latch. The NAND logic gate is configured to receive a first bit line signal and a second bit line signal, and to generate a first signal. The first N-type transistor is coupled to the NAND logic gate, and configured to receive a first pre-charge signal. The second N-type transistor is coupled to the first N-type transistor and a reference voltage supply, and configured to receive a first clock signal. The first inverter is coupled to the NAND logic gate, and configured to output a data signal inverted from the first signal. The first latch is coupled to the NAND logic gate, and configured to latch the first signal in response to at least the first clock signal or the first pre-charge signal.
    Type: Application
    Filed: April 20, 2021
    Publication date: September 1, 2022
    Inventors: Yi-Tzu CHEN, Ching-Wei WU, Hau-Tai SHIEH, Hung-Jen LIAO, Fu-An WU, He-Zhou WAN, XiuLi YANG
  • Patent number: 11430909
    Abstract: A method includes forming image sensors in a semiconductor substrate. A first alignment mark is formed close to a front side of the semiconductor substrate. The method further includes performing a backside polishing process to thin the semiconductor substrate, forming a second alignment mark on the backside of the semiconductor substrate, and forming a feature on the backside of the semiconductor substrate. The feature is formed using the second alignment mark for alignment.
    Type: Grant
    Filed: May 4, 2020
    Date of Patent: August 30, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chih Wei Sung, Chung-Bin Tseng, Keng-Ying Liao, Yen-Jou Wu, Po-Zen Chen, Su-Yu Yeh, Ching-Chung Su
  • Publication number: 20220262685
    Abstract: Embodiments disclosed herein relate to a pre-deposition treatment of materials utilized in metal gates of different transistors on a semiconductor substrate. In an embodiment, a method includes exposing a first metal-containing layer of a first device and a second metal-containing layer of a second device to a reactant to form respective monolayers on the first and second metal-containing layers. The first and second devices are on a substrate. The first device includes a first gate structure including the first metal-containing layer. The second device includes a second gate structure including the second metal-containing layer different from the second metal-containing layer. The monolayers on the first and second metal-containing layers are exposed to an oxidant to provide a hydroxyl group (—OH) terminated surface for the monolayers. Thereafter, a third metal-containing layer is formed on the —OH terminated surfaces of the monolayers on the first and second metal-containing layers.
    Type: Application
    Filed: May 2, 2022
    Publication date: August 18, 2022
    Inventors: Cheng-Yen Tsai, Chung-Chiang Wu, Tai-Wei Hwang, Hung-Chin Chung, Wei-Chin Lee, Da-Yuan Lee, Ching-Hwanq Su, Yin-Chuan Chuang, Kuan-Ting Liu
  • Patent number: 11407636
    Abstract: The present disclosure, in some embodiments, relates to a method of forming a micro-electromechanical system (MEMS) package. The method includes forming one or more depressions within a capping substrate. A back-side of a MEMS substrate is bonded to the capping substrate after forming the one or more depressions, so that the one or more depressions define one or more cavities between the capping substrate and the MEMS substrate. A front-side of the MEMS substrate is selectively etched to form one or more trenches extending through the MEMS substrate, and one or more polysilicon vias are formed within the one or more trenches. A conductive bonding structure is formed on the front-side of the MEMS substrate at a location contacting the one or more polysilicon vias. The MEMS substrate is bonded to a CMOS substrate having one or more semiconductor devices by way of the conductive bonding structure.
    Type: Grant
    Filed: September 5, 2018
    Date of Patent: August 9, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shyh-Wei Cheng, Chih-Yu Wang, Hsi-Cheng Hsu, Ji-Hong Chiang, Jui-Chun Weng, Shiuan-Jeng Lin, Wei-Ding Wu, Ching-Hsiang Hu
  • Publication number: 20220246182
    Abstract: A circuit includes a first inverter, a second inverter, a first header circuit and a second header circuit. The first inverter is configured to convert a first global write signal into a first local write signal transmitted to a complement bit line. The second inverter is configured to convert a second global write signal into a second local write signal transmitted to a bit line. The first header circuit connects or disconnects a power terminal of the first inverter with a positive reference voltage supply in response to a write enable signal and the second global write signal. The second header circuit connects or disconnects a power terminal of the second inverter with the positive reference voltage supply in response to a write enable signal and the first global write signal.
    Type: Application
    Filed: February 23, 2021
    Publication date: August 4, 2022
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., TSMC Nanjing Company Limited, TSMC China Company Limited
    Inventors: He-Zhou WAN, Xiu-Li YANG, Pei-Le LI, Ching-Wei WU
  • Patent number: 11397302
    Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.
    Type: Grant
    Filed: October 9, 2020
    Date of Patent: July 26, 2022
    Assignee: TDK TAIWAN CORP.
    Inventors: Chao-Chang Hu, Chih-Wei Weng, Chia-Che Wu, Chien-Yu Kao, Hsiao-Hsin Hu, He-Ling Chang, Chao-Hsi Wang, Chen-Hsien Fan, Che-Wei Chang, Mao-Gen Jian, Sung-Mao Tsai, Wei-Jhe Shen, Yung-Ping Yang, Sin-Hong Lin, Tzu-Yu Chang, Sin-Jhong Song, Shang-Yu Hsu, Meng-Ting Lin, Shih-Wei Hung, Yu-Huai Liao, Mao-Kuo Hsu, Hsueh-Ju Lu, Ching-Chieh Huang, Chih-Wen Chiang, Yu-Chiao Lo, Ying-Jen Wang, Shu-Shan Chen, Che-Hsiang Chiu
  • Patent number: 11398440
    Abstract: An integrated circuit structure includes a metal pad, a passivation layer including a portion over the metal pad, a first polymer layer over the passivation layer, and a first Post-Passivation Interconnect (PPI) extending into to the first polymer layer. The first PPI is electrically connected to the metal pad. A dummy metal pad is located in the first polymer layer. A second polymer layer is overlying the first polymer layer, the dummy metal pad, and the first PPI. An Under-Bump-Metallurgy (UBM) extends into the second polymer layer to electrically couple to the dummy metal pad.
    Type: Grant
    Filed: October 22, 2018
    Date of Patent: July 26, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hao-Hsiang Chuang, Shih-Wei Liang, Ching-Feng Yang, Kai-Chiang Wu, Hao-Yi Tsai, Chuei-Tang Wang, Chen-Hua Yu
  • Patent number: 11393509
    Abstract: A circuit includes a first inverter, a second inverter, a first header circuit and a second header circuit. The first inverter is configured to convert a first global write signal into a first local write signal transmitted to a complement bit line. The second inverter is configured to convert a second global write signal into a second local write signal transmitted to a bit line. The first header circuit connects or disconnects a power terminal of the first inverter with a positive reference voltage supply in response to a write enable signal and the second global write signal. The second header circuit connects or disconnects a power terminal of the second inverter with the positive reference voltage supply in response to a write enable signal and the first global write signal.
    Type: Grant
    Filed: February 23, 2021
    Date of Patent: July 19, 2022
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., TSMC NANJING COMPANY LIMITED, TSMC CHINA COMPANY LIMITED
    Inventors: He-Zhou Wan, Xiu-Li Yang, Pei-Le Li, Ching-Wei Wu
  • Publication number: 20220223542
    Abstract: A semiconductor device includes a circuit substrate, a semiconductor package, and a package frame. The semiconductor package is disposed on the circuit substrate. The package frame is disposed over the circuit substrate. The package frame encircles the semiconductor package. The semiconductor package has a first surface facing the circuit substrate and a second surface opposite to the first surface. The package frame leaves exposed at least a portion of the second surface of the semiconductor package. The package frame forms a cavity, which cavity encircles the semiconductor package.
    Type: Application
    Filed: January 14, 2021
    Publication date: July 14, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Wei Lin, Chun-Yen Lan, Tzu-Ting Chou, Tzu-Shiun Sheu, Chih-Wei Lin, Shih-Peng Tai, Wei-Cheng Wu, Ching-Hua Hsieh
  • Publication number: 20220216201
    Abstract: A method includes forming a first semiconductor fin in a substrate, forming a metal gate structure over the first semiconductor fin, removing a portion of the metal gate structure to form a first recess in the metal gate structure that is laterally separated from the first semiconductor fin by a first distance, wherein the first distance is determined according to a first desired threshold voltage associated with the first semiconductor fin, and filling the recess with a dielectric material.
    Type: Application
    Filed: March 24, 2022
    Publication date: July 7, 2022
    Inventors: Chung-Chiang Wu, Shih-Hang Chiu, Chih-Chang Hung, I-Wei Yang, Shu-Yuan Ku, Cheng-Lung Hung, Da-Yuan Lee, Ching-Hwanq Su
  • Publication number: 20220215868
    Abstract: An integrated circuit includes a plurality of memory cells, a first pair of complementary data lines, and a second pair of complementary data lines. The plurality of memory cells include a first array of memory cells and a second array of memory cells. The first pair of complementary data lines are coupled to the first array of memory cells. The second pair of complementary data lines are different from the first pair of complementary data lines and are coupled to the second array of memory cells. A number of memory cells in the first array of memory cells is different from a number of memory cells in the second array of memory cells.
    Type: Application
    Filed: March 25, 2022
    Publication date: July 7, 2022
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., TSMC CHINA COMPANY LIMITED
    Inventors: Xiu-Li YANG, He-Zhou WAN, Kuan CHENG, Ching-Wei WU
  • Publication number: 20220215867
    Abstract: An integrated circuit includes multiple memory cells, a first pair of complementary data lines, a second pair of complementary data lines, multiple first word lines, and multiple second word lines. The memory cells include a first array of memory cells and a second array of memory cells. The first pair of complementary data lines are coupled to the first array of memory cells. The second pair of complementary data lines are coupled to the second array of memory cells. Lengths of the first pair of complementary data lines are shorter than lengths of the second pair of complementary data lines. The first word lines and the second word lines are arranged according to a predetermined ratio of a number of the first word lines to a number of the second word lines. The predetermined ratio is less than 1.
    Type: Application
    Filed: March 25, 2022
    Publication date: July 7, 2022
    Applicants: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., TSMC CHINA COMPANY LIMITED
    Inventors: Xiu-Li YANG, He-Zhou WAN, Kuan CHENG, Ching-Wei WU
  • Publication number: 20220199124
    Abstract: A circuit includes a power management circuit and a memory circuit. The power management circuit is configured to receive a first control signal and a second control signal, and to supply a first supply voltage, a second supply voltage and a third supply voltage. The first control signal has a first voltage swing, and the second control signal has a second voltage swing different from the first voltage swing. The first control signal causes the power management circuit to enter a power management mode having a first state and a second state. The memory circuit is coupled to the power management circuit, and is in the first state or the second state in response to at least the first supply voltage supplied by the power management circuit.
    Type: Application
    Filed: February 3, 2021
    Publication date: June 23, 2022
    Inventors: Xiu-Li YANG, Ching-Wei WU, He-Zhou WAN, Ming-En BU
  • Publication number: 20220199145
    Abstract: Disclosed herein are related to a memory system including unit storage circuits. In one aspect, each of the unit storage circuits abuts an adjacent one of the unit storage circuits. In one aspect, each of the unit storage circuits includes a first group of memory cells, a second group of memory cells, a first sub-word line driver to apply a first control signal to the first group of memory cells through a first sub-word line extending along a direction, and a second sub-word line driver to apply a second control signal to the second group of memory cells through a second sub-word line extending along the direction. In one aspect, the memory system includes a common word line driver abutting one of the unit storage circuits and configured to apply a common control signal to the unit storage circuits through a word line extending along the direction.
    Type: Application
    Filed: March 4, 2022
    Publication date: June 23, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi-Tzu Chen, Ching-Wei Wu, Hau-Tai Shieh, Hung-Jen Liao
  • Publication number: 20220189542
    Abstract: A circuit includes first and second bit lines, a second power node having a voltage level below that of a first power node, a reference node having a reference voltage level, first and second pass gates and drivers, first and second logic gates coupled to the second power node, first and second conversion circuits coupled between the first power node and respective first and second logic and pass gates, and first and second NOR gates coupled between the second power node and respective first and second logic gates and drivers. The first and second pass gates selectively couple the first and second bit lines to the first power node responsive to the respective second and first logic gates and conversion circuits, and the first and second drivers selectively couple the first and second bit lines to the reference node responsive to the respective first and second logic and NOR gates.
    Type: Application
    Filed: March 8, 2022
    Publication date: June 16, 2022
    Inventors: Pankaj AGGARWAL, Ching-Wei WU, Jaymeen Bharatkumar ASEEM
  • Patent number: 11361812
    Abstract: Disclosed herein are related to a memory system including unit storage circuits. In one aspect, each of the unit storage circuits abuts an adjacent one of the unit storage circuits. In one aspect, each of the unit storage circuits includes a first group of memory cells, a second group of memory cells, a first sub-word line driver to apply a first control signal to the first group of memory cells through a first sub-word line extending along a direction, and a second sub-word line driver to apply a second control signal to the second group of memory cells through a second sub-word line extending along the direction. In one aspect, the memory system includes a common word line driver abutting one of the unit storage circuits and configured to apply a common control signal to the unit storage circuits through a word line extending along the direction.
    Type: Grant
    Filed: October 27, 2020
    Date of Patent: June 14, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Yi-Tzu Chen, Ching-Wei Wu, Hau-Tai Shieh, Hung-Jen Liao
  • Publication number: 20220171688
    Abstract: An exemplary testing environment can operate in a testing mode of operation to test whether a memory device or other electronic devices communicatively coupled to the memory device operate as expected or unexpectedly as a result of one or more manufacturing faults. The testing mode of operation includes a shift mode of operation, a capture mode of operation, and/or a scan mode of operation. In the shift mode of operation and the scan mode of operation, the exemplary testing environment delivers a serial input sequence of data to the memory device. In the capture mode of operation, the exemplary testing environment delivers a parallel input sequence of data to the memory device.
    Type: Application
    Filed: February 18, 2022
    Publication date: June 2, 2022
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ming-Hung CHANG, Atul KATOCH, Chia-En HUANG, Ching-Wei WU, Donald G. MIKAN, JR., Hao-I YANG, Kao-Cheng LIN, Ming-Chien TSAI, Saman M.I. ADHAM, Tsung-Yung CHANG, Uppu Sharath CHANDRA
  • Patent number: 11325145
    Abstract: A system for determining spraying information used for spraying a 3D object using a spray tool is provided. The system includes a 3D image capturing device and a computing device. The 3D image capturing device is configured to capture a 3D image of the 3D object. The computing device is configured to determine a plurality of border data points of the 3D object based on the 3D image, to determine a plurality of inside points positioned on a surface of the 3D object within a range defined among the border data points according to a spray width with which the spray tool is to spray the 3D object, and to output the border data points and the inside points as the spraying information for spraying the 3D object.
    Type: Grant
    Filed: December 5, 2019
    Date of Patent: May 10, 2022
    Assignee: ORISOL TAIWAN LIMITED
    Inventors: Yu-Fong Yang, Yen-Te Lee, Ching-Wei Wu, Wei-Hsin Hsu