Abstract: A circuit includes a selection circuit configured to receive a first address from a first port and a second address from a second port, a first latch circuit coupled to the selection circuit and configured to output each of the first address and the second address received from the selection circuit, a decoder, and a control circuit. The control circuit is configured to generate a plurality of signals configured to cause the decoder to decode each of the first address and the second address.

Abstract: A circuit includes a selection circuit configured to receive a first address at a first input and a second address at a second input, pass the first address to an output when a select signal has a first logical state, and pass the second address to the output when the select signal has a second logical state different from the first logical state. The circuit also includes a decoder configured to decode the passed first address or second address.

Abstract: A circuit includes a selection circuit configured to receive a first address at a first input and a second address at a second input, pass the first address to an output when a select signal has a first logical state, and pass the second address to the output when the select signal has a second logical state different from the first logical state. The circuit also includes a decoder configured to decode the passed first address or second address.

Abstract: A system for determining spraying information used for spraying a 3D object using a spray tool is provided. The system includes a 3D image capturing device and a computing device. The 3D image capturing device is configured to capture a 3D image of the 3D object. The computing device is configured to determine a plurality of border data points of the 3D object based on the 3D image, to determine a plurality of inside points positioned on a surface of the 3D object within a range defined among the border data points according to a spray width with which the spray tool is to spray the 3D object, and to output the border data points and the inside points as the spraying information for spraying the 3D object.

Abstract: A method of operating a memory macro includes receiving a first signal indicating a first operational mode of the memory macro, receiving a second signal indicating a second operational mode of the memory macro, generating, by a first logic circuit, a third signal and a fourth signal based on the first signal and a fifth signal thereby causing a change in the first operational mode of the memory macro, and generating, by a second logic circuit, the fifth signal and a sixth signal based on at least the second signal and thereby causing a change in the second operational mode of the memory macro. The first logic circuit is coupled to a first memory cell array and a first IO circuit. The second logic circuit is coupled to a first and second set of word line driver circuits.

Abstract: A circuit includes a bit line, a pass gate coupled between the bit line and a power node having a first power voltage level, and a driver coupled between the bit line and a reference node having a reference voltage level. The pass gate couples the bit line to the power node when the first signal has the reference voltage level and decouples the bit line from the power node when the first signal has the first power voltage level. The driver receives a second signal based on a control signal, couples the bit line to the reference node when the second signal has a second power voltage level below the first power voltage level, and decouples the bit line from the reference node when the second signal has the reference voltage level. An input circuit generates the first signal independent of the control signal.

Abstract: An exemplary testing environment can operate in a testing mode of operation to test whether a memory device or other electronic devices communicatively coupled to the memory device operate as expected or unexpectedly as a result of one or more manufacturing faults. The testing mode of operation includes a shift mode of operation, a capture mode of operation, and/or a scan mode of operation. In the shift mode of operation and the scan mode of operation, the exemplary testing environment delivers a serial input sequence of data to the memory device. In the capture mode of operation, the exemplary testing environment delivers a parallel input sequence of data to the memory device.

Abstract: A memory macro includes a first input terminal, a first input pin, a first memory cell array, a second memory cell array, a first set of driver circuits, a second set of driver circuits and a logic circuit. The first input pin is configured to receive a first signal indicating an operational mode of the memory macro. The first set of driver circuits is coupled to the first memory cell array. The second set of driver circuits is coupled to the second memory cell array. The logic circuit has a first terminal coupled to the first input pin and is configured to receive the first signal. The logic circuit is coupled to the first and second set of driver circuits, and is configured to generate a second signal and a third signal responsive to the first signal, and cause a change in the operational mode of the memory macro.

Abstract: A circuit includes a bit line, a power node having a first power voltage level, a reference node having a reference voltage level, a pass gate coupled between the bit line and the power node, and a driver coupled between the bit line and the reference node. The pass gate couples the bit line to the power node responsive to a first signal, and the driver couples the bit line to the reference node responsive to a second signal. The first signal is based on the first power voltage level, and the second signal is based on a second power voltage level between the reference voltage level and the first power voltage level.

Abstract: A data storage device can detect for a failure in decoding of an x-bit row address and/or a y-bit column of an (x+y)-bit address. The data storage device decodes the x-bit row address and/or the y-bit column address to provide wordlines (WLs) and/or bitlines (BLs) to access one or more cells from among a memory array of the data storage device. The data storage device compares one or more subsets of the WLs and/or of the BLs to each other to detect for the failure. The data storage device determines the failure is present in the decoding of the x-bit row address and/or the y-bit column of the (x+y)-bit address when one or more WL and/or BL from among the one or more subsets of the WLs and/or the BLs differ.

Abstract: An exemplary testing environment can operate in a testing mode of operation to test whether a memory device or other electronic devices communicatively coupled to the memory device operate as expected or unexpectedly as a result of one or more manufacturing faults. The testing mode of operation includes a shift mode of operation, a capture mode of operation, and/or a scan mode of operation. In the shift mode of operation and the scan mode of operation, the exemplary testing environment delivers a serial input sequence of data to the memory device. In the capture mode of operation, the exemplary testing environment delivers a parallel input sequence of data to the memory device.

Abstract: A method, of detecting an address decoding error of a semiconductor device, includes: decoding an original address, with an address decoder of the semiconductor device, to form a corresponding decoded address; recoding the decoded address, with an encoder of the semiconductor device, to form a recoded address; making a comparison, with a comparator of the semiconductor device, of the recoded address and the original address; and detecting an address decoding error based on the comparison.

Abstract: A system for detecting an address decoding error of a semiconductor device, includes: decoding an original address, with an address decoder of the semiconductor device, to form a corresponding decoded address; recoding the decoded address, with an encoder of the semiconductor device, to form a recoded address; making a comparison, with a comparator of the semiconductor device, of the recoded address and the original address; and detecting an address decoding error based on the comparison.

Abstract: A data storage device can detect for a failure in decoding of an x-bit row address and/or a y-bit column of an (x+y)-bit address. The data storage device decodes the x-bit row address and/or the y-bit column address to provide wordlines (WLs) and/or bitlines (BLs) to access one or more cells from among a memory array of the data storage device. The data storage device compares one or more subsets of the WLs and/or of the BLs to each other to detect for the failure. The data storage device determines the failure is present in the decoding of the x-bit row address and/or the y-bit column of the (x+y)-bit address when one or more WL and/or BL from among the one or more subsets of the WLs and/or the BLs differ.

Abstract: A data storage device can detect for a failure in decoding of an x-bit row address and/or a y-bit column of an (x+y)-bit address. The data storage device decodes the x-bit row address and/or the y-bit column address to provide wordlines (WLs) and/or bitlines (BLs) to access one or more cells from among a memory array of the data storage device. The data storage device compares one or more subsets of the WLs and/or of the BLs to each other to detect for the failure. The data storage device determines the failure is present in the decoding of the x-bit row address and/or the y-bit column of the (x+y)-bit address when one or more WL and/or BL from among the one or more subsets of the WLs and/or the BLs differ.

Abstract: A memory macro includes a first input terminal, a first input pin, a first memory cell array, a second memory cell array, a first set of driver circuits, a second set of driver circuits and a logic circuit. The first input pin is configured to receive a first signal indicating an operational mode of the memory macro. The first set of driver circuits is coupled to the first memory cell array. The second set of driver circuits is coupled to the second memory cell array. The logic circuit has a first terminal coupled to the first input pin and is configured to receive the first signal. The logic circuit is coupled to the first and second set of driver circuits, and is configured to generate a second signal and a third signal responsive to the first signal, and cause a change in the operational mode of the memory macro.

Abstract: A data storage device can detect for a failure in decoding of an x-bit row address and/or a y-bit column of an (x+y)-bit address. The data storage device decodes the x-bit row address and/or the y-bit column address to provide wordlines (WLs) and/or bitlines (BLs) to access one or more cells from among a memory array of the data storage device. The data storage device compares one or more subsets of the WLs and/or of the BLs to each other to detect for the failure. The data storage device determines the failure is present in the decoding of the x-bit row address and/or the y-bit column of the (x+y)-bit address when one or more WL and/or BL from among the one or more subsets of the WLs and/or the BLs differ.

Abstract: A memory macro includes a first input terminal, a first memory cell array, a second memory cell array, a first input output (IO) circuit, a second IO circuit, a first set of driver circuits, a second set of driver circuits and a logic circuit. The first set of driver circuits are coupled to the first memory cell array and the first IO circuit. The second set of driver circuits are coupled to the second memory cell array and the second IO circuit. The logic circuit has a first terminal coupled to the first input terminal and configured to receive a first signal. The logic circuit is coupled to the first set of driver circuits and the second set of driver circuits. The logic circuit is configured to generate at least a second signal responsive to the first signal causing a change in the operational mode of the memory macro.

Abstract: An exemplary testing environment can operate in a testing mode of operation to test whether a memory device or other electronic devices communicatively coupled to the memory device operate as expected or unexpectedly as a result of one or more manufacturing faults. The testing mode of operation includes a shift mode of operation, a capture mode of operation, and/or a scan mode of operation. In the shift mode of operation and the scan mode of operation, the exemplary testing environment delivers a serial input sequence of data to the memory device. In the capture mode of operation, the exemplary testing environment delivers a parallel input sequence of data to the memory device.

Abstract: A method, of detecting an address decoding error of a semiconductor device, includes: decoding an original address, with an address decoder of the semiconductor device, to form a corresponding decoded address; recoding the decoded address, with an encoder of the semiconductor device, to form a recoded address; making a comparison, with a comparator of the semiconductor device, of the recoded address and the original address; and detecting an address decoding error based on the comparison.